DIODE 200A 600V schottky
Abstract: SWITCHING DIODE 600V 2A SDP02S60 SDP02s L4834A SIDC00D60SIC2 600 V power Schottky silicon carbide diode
Text: Final SIDC00D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching
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SIDC00D60SIC2
Q67050-A4201A101
Q67050-A4201A102
L4834A,
DIODE 200A 600V schottky
SWITCHING DIODE 600V 2A
SDP02S60
SDP02s
L4834A
SIDC00D60SIC2
600 V power Schottky silicon carbide diode
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600 V power Schottky silicon carbide diode
Abstract: Schottky diode Die SDT02S60 SIDC05D60SIC3 DSA0037454
Text: SIDC05D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior
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SIDC05D60SIC3
Q67050-A4201A103
600 V power Schottky silicon carbide diode
Schottky diode Die
SDT02S60
SIDC05D60SIC3
DSA0037454
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SDP02S60
Abstract: SWITCHING DIODE 600V 2A A102 diode sdp02s
Text: Preliminary SIDC00D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching
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SIDC00D60SIC2
SIDC00D60SIC2
Q67050-A4201sawn
Q67050-A4201unsawn
L4834A,
SDP02S60
SWITCHING DIODE 600V 2A
A102 diode
sdp02s
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Untitled
Abstract: No abstract text available
Text: SDT02S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor VRRM 600 V • Switching behavior benchmark Qc 4.6 nC • No reverse recovery IF 2 material - Silicon Carbide
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SDT02S60
PG-TO220-2-2.
Q67040-S4511
D02S60
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d02s60
Abstract: D02S60C SDT02S60 D02S P-TO220-2-2
Text: SDT02S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor VRRM 600 V • Switching behavior benchmark Qc 4.6 nC • No reverse recovery IF 2 material - Silicon Carbide
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SDT02S60
P-TO220-2-2.
Q67040-S4511
D02S60
d02s60
D02S60C
SDT02S60
D02S
P-TO220-2-2
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d02s60
Abstract: d02s60c PG-TO220-2-2 SDT02S60
Text: SDT02S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor VRRM 600 V • Switching behavior benchmark Qc 4.6 nC • No reverse recovery IF 2 material - Silicon Carbide
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SDT02S60
PG-TO220-2-2.
Q67040-S4511
D02S60
PG-TO-220-2-2
d02s60
d02s60c
PG-TO220-2-2
SDT02S60
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d02s60
Abstract: No abstract text available
Text: SDT02S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor VRRM 600 V • Switching behavior benchmark Qc 4.6 nC • No reverse recovery IF 2 material - Silicon Carbide
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SDT02S60
PG-TO220-2-2.
Q67040-S4511
D02S60
d02s60
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Untitled
Abstract: No abstract text available
Text: 10JL2C48A,U10JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2C48A,U10JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current
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10JL2C48A
U10JL2C48A
12-10D1A
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10JL2C48A
Abstract: U10JL2C48A
Text: 10JL2C48A,U10JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2C48A,U10JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current
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10JL2C48A
U10JL2C48A
10JL2C48A
12-10D1A
12-10D2A
000707EAA1
10JL2C
U10JL2C48A
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Untitled
Abstract: No abstract text available
Text: 10JL2C48A,U10JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2C48A,U10JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current
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10JL2C48A
U10JL2C48A
12-10D1A
12-10D2A
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Untitled
Abstract: No abstract text available
Text: 10JL2C48A,U10JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2C48A,U10JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current
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10JL2C48A
U10JL2C48A
10JL2C48A
12-10D1A
12-10D2A
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10JL2C48A
Abstract: U10JL2C48A
Text: 10JL2C48A,U10JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2C48A, U10JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER and CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current
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10JL2C48A
U10JL2C48A
10JL2C48A,
10JL2C48A
12-10D1A
12-10D2A
U10JL2C48A
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10JL2CZ47A
Abstract: No abstract text available
Text: 10JL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2CZ47A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current : IO = 10A
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10JL2CZ47A
10JL2CZ47A
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88 diode toshiba
Abstract: 20JL2C 20JL2C41A
Text: 20JL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20JL2C41A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current : IO = 20A
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20JL2C41A
88 diode toshiba
20JL2C
20JL2C41A
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10JL2CZ47
Abstract: No abstract text available
Text: 10JL2CZ47 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2CZ47 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current : IO = 10A
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10JL2CZ47
10JL2CZ47
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Untitled
Abstract: No abstract text available
Text: 10JL2C48A,U10JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2C48A,U10JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION l Repetitive Peak Reverse Voltage : VRRM = 600V l Average Output Rectified Current
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10JL2C48A
U10JL2C48A
10JL2C48A
12-10D1A
12-10D2A
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Untitled
Abstract: No abstract text available
Text: 10JL2C48A,U10JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2C48A, U10JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER and CHOPPER APPLICATION z Repetitive Peak Reverse Voltage : VRRM = 600V z Average Output Rectified Current
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10JL2C48A
U10JL2C48A
10JL2C48A,
12-10D1A
12-10D2A
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TOSHIBA DIODE DATABOOK
Abstract: 10JL2C48A U10JL2C48A
Text: 10JL2C48A,U10JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2C48A, U10JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER and CHOPPER APPLICATION z Repetitive Peak Reverse Voltage : VRRM = 600V z Average Output Rectified Current
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10JL2C48A
U10JL2C48A
10JL2C48A,
10JL2C48A
12-10D1A
12-10D2A
TOSHIBA DIODE DATABOOK
U10JL2C48A
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10JL2C48A
Abstract: U10JL2C48A
Text: 10JL2C48A,U10JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2C48A, U10JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER and CHOPPER APPLICATION z Repetitive Peak Reverse Voltage : VRRM = 600V z Average Output Rectified Current
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10JL2C48A
U10JL2C48A
10JL2C48A,
10JL2C48A
12-10D1A
12-10D2A
U10JL2C48A
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20JL2C
Abstract: U20JL2C48A TOSHIBA DIODE DATABOOK 10D2A toshiba lead free mark
Text: U20JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Average Output Rectified Current : VRRM = 600V : IO = 20A Ultra Fast Reverse−Recovery Time : trr = 35ns (Max)
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U20JL2C48A
20JL2C
U20JL2C48A
TOSHIBA DIODE DATABOOK
10D2A
toshiba lead free mark
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Untitled
Abstract: No abstract text available
Text: 20JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20JL2C41 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION l Repetitive Peak Reverse Voltage : VRRM = 600V l Average Output Rectified Current : IO = 20A
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20JL2C41
12-16D1A
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Untitled
Abstract: No abstract text available
Text: 10JL2CZ47 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2CZ47 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION l Repetitive Peak Reverse Voltage : VRRM = 600V l Average Output Rectified Current : IO = 10A
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10JL2CZ47
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Untitled
Abstract: No abstract text available
Text: U20JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Average Output Rectified Current : VRRM = 600V : IO = 20A Ultra Fast Reverse−Recovery Time : trr = 35ns (Max)
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U20JL2C48A
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S11V
Abstract: Schottky diode TO220 15A 1000V 5tuz47 diode diode schottky 1000V 2a lead 5TUZ47 DO-41SS 20GWJ2CZ47 rectifier 5A 1000V DIP 1R5DL41A 20L6P45
Text: 1 NEW PRODUCTS DIGEST High-Breakdown Voltage 400V, 600V , Hlgh-Efficlency Diode (HEP) For prim ary flywheel use (600V) and secodary rectification use (400V) in com pact, high-efficiency switching pow er supplies. 5GLZ47A : V rrm = 4 0 0 V , IF(av) = 5A, trr« 5 n s
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5GLZ47A
5JLZ47
1DL41A
1DL42A
1R5DL41A
3DL41A
DO-41S
DO-15L
S11V
Schottky diode TO220 15A 1000V
5tuz47 diode
diode schottky 1000V 2a lead
5TUZ47
DO-41SS
20GWJ2CZ47
rectifier 5A 1000V DIP
20L6P45
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