Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., UF830 MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching
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Original
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UF830
O-220
UF830L
UF830-TA3-T
UF830es
QW-R502-046
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PDF
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S1-M10
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay
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Original
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UF830
O-220
O-220F
O-220F1
O-262
O-263
O-251
O-252
QW-R502-046
S1-M10
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PDF
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uf830l
Abstract: UF830G UF830
Text: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay
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Original
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UF830
O-220
O-220F
O-262
O-263
O-251
O-252
UF830L-TAt
QW-R502-046
uf830l
UF830G
UF830
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PDF
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UF840
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching
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Original
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UF840
UF840L-TA3-T
UF840G-TA3-T
UF840L-TF1-T
UF840G-TF1-T
UF840L-TF2-T
UF840G-TF2-T
UF840L-TF3-T
UF840G-TF3-T
UF840L-TF3T-T
UF840
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF840 MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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Original
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UF840
UF840L
UF840-TA3-T
UF840L-TA3-T
O-220
UF840-TF3-T
UF840L-TF3-T
QW-R502-047
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching
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Original
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UF830
UF830L-TA3-T
UF830G-TA3-T
O-220
UF830L-TF3-T
UF830G-TF3-T
O-220F
UF830L-TF1-T
QW-R502-046
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PDF
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specifications of power mosfet
Abstract: N-Channel mosfet 400v to220 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
Text: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching
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Original
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UF840
O-220
O-220F1
O-220F2
O-220F
O-262
O-263
QW-R502-047
specifications of power mosfet
N-Channel mosfet 400v to220
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
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PDF
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uf830l
Abstract: RGS12 UF830 5V GATE TO SOURCE VOLTAGE MOSFET MOSFET 400V TO-220 mosfet TEST UF830L-TN3-R uf830l-ta3-t RGS-12 N-Channel mosfet 400v to220
Text: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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Original
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UF830
UF830L
UF830-TA3-T
UF830L-TA3-T
UF830-TF3-T
UF830L-TF3-T
QW-R502-046
uf830l
RGS12
UF830
5V GATE TO SOURCE VOLTAGE MOSFET
MOSFET 400V TO-220
mosfet TEST
UF830L-TN3-R
uf830l-ta3-t
RGS-12
N-Channel mosfet 400v to220
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF830-E Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching
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Original
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UF830-E
O-220
UF830L-TA3-T
UF830G-TA3-T
QW-R502-993
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PDF
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MOSFET 50V 100A TO-220
Abstract: UF840 UF840L-TA3-T UF840-TA3-T UF840-TF3-T
Text: UNISONIC TECHNOLOGIES CO., LTD UF840 MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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Original
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UF840
O-220
O-220F
UF840L
UF840-TA3-T
UF840L-TA3-T
QW-R502-047
MOSFET 50V 100A TO-220
UF840
UF840L-TA3-T
UF840-TA3-T
UF840-TF3-T
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PDF
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UF830L
Abstract: UF830G UF830 max3103
Text: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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Original
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UF830
O-220
O-220F
O-262
O-251
O-252
UF830L-TA3-T
UF830G-TA3-Tt
QW-R502-046
UF830L
UF830G
UF830
max3103
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF830 MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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Original
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UF830
O-220
O-220F
UF830L
UF830-TA3-T
UF830L-TA3-Tat
QW-R502-046
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching
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Original
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UF830
O-220
O-220F
O-220F1
O-263
O-220F2
O-262
O-251
O-252
UF830L-Tat
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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Original
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UF840
UF840L
UF840-TA3-T
UF840L-TA3-T
O-220
UF840at
QW-R502-047
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF830-F Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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Original
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UF830-F
UF830L-TA3-T
UF830G-TA3-T
O-220
UF830L-TF3-T
UF830G-TF3-T
O-220F
QW-R502-A94
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching
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Original
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UF830
O-220
O-220F1
O-220F2
O-252
O-251
O-262
O-220F
O-263
QW-R502-046
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF830-F Preliminary Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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Original
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UF830-F
UF830L-TA3-T
UF830G-TA3-T
O-220
UF830L-TF3-T
UF830G-TF3-T
O-220at
QW-R502-A94
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF830K Preliminary Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION 1 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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Original
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UF830K
O-220F
O-220
O-220F2
O-252
UF830KL-TA3-T
QW-R502-A77
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PDF
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npn 1000V 15A
Abstract: NPN Transistor VCEO 1000V diode 1000V 10a MJW16010A transistor 1000V 6A transistor VCE 1000V transistor 1000V vbe 10v, vce 500v NPN Transistor transistor VCEO 1000V
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJW16010A DESCRIPTION •Low Collector Saturation Voltage ·Collector-Emitter Sustaining Voltage: VCEO SUS = 500V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high-voltage, high-speed,power switching in
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Original
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MJW16010A
npn 1000V 15A
NPN Transistor VCEO 1000V
diode 1000V 10a
MJW16010A
transistor 1000V 6A
transistor VCE 1000V
transistor 1000V
vbe 10v, vce 500v NPN Transistor
transistor VCEO 1000V
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PDF
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N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
Abstract: MOSFET 400V TO-220 TQ2 rohs UF840-TQ2-T UF840 UF840L-TA3-T UF840-TA3-T UF840-TF3-T uf840l
Text: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION 1 TO-263 TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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Original
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UF840
O-263
O-220
O-220F
O-220F1
UF840L
UF840G
QW-R502-047
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
MOSFET 400V TO-220
TQ2 rohs
UF840-TQ2-T
UF840
UF840L-TA3-T
UF840-TA3-T
UF840-TF3-T
uf840l
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF830K-MT Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators,
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Original
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UF830K-MT
UF830K-MT
UF830KL-TA3-T
UF830KG-TA3-T
UF830KL-TF3-T
UF830KG-TF3-T
QW-R209-030
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PDF
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TRANSISTOR mosfet IRF840
Abstract: transistor irf840 IRF840 n-channel mosfet Application of irf840 mosfet irf840 datasheet irf840 mosfet mosfet nA idss IRF840 equivalent irf840 IRF840 and its equivalent
Text: isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF840 •FEATURES ·Drain Current –ID=8.0A@ TC=25℃ ·Drain Source Voltage: VDSS= 500V Min ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) ·DESCRITION ·Designed for high voltage, high speed switching power applications such as switching regulators, converters, solenoid and
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Original
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IRF840
TRANSISTOR mosfet IRF840
transistor irf840
IRF840 n-channel mosfet
Application of irf840
mosfet irf840
datasheet irf840 mosfet
mosfet nA idss
IRF840
equivalent irf840
IRF840 and its equivalent
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PDF
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uptb540
Abstract: No abstract text available
Text: niC R O S E N I CORP/ Ü IA TE R TOtilN S DE D • T3M7Tti3 0012513 27b ■ U N I T POWER TRANSISTORS UPTB520 UPTB530 UPTB540 UPTB550 0.1 Amp, 500V, Planar NPN, Plastic 7 FEATURES ' • Designed for High Speed Switching Applications • Col lector-Emitter Voltage: up to 500V
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OCR Scan
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UPTB520
UPTB530
UPTB540
UPTB550
UPTB540
100mA
10MHz
300/is;
UPTB520,
UPTB530,
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PDF
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UPTB550
Abstract: No abstract text available
Text: POWER TRANSISTORS 0.1 Amp, 500V, Planar NPN, Plastic u p tb 540 UPTB550 FEATU RES DESCRIPTIO N • • • • Unitrode high voltage power transistors provide a unique combination of low saturation voltage, high gain and fast switching. They are ideally suited for
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OCR Scan
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UPTB550
10MHz
100mA
UPTB550
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PDF
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