SC64046
Abstract: SC64046FN SC64046FNG SB99026MNG sb99026mn ECLTSSOP20EVB MC10EL58D NB3N3011 SB99026MNR2G SC64029FN
Text: 1 EO1_LISTED_PART_ID MC100ELT20D MC100ELT20DG MC100ELT20DR2 MC100ELT20DR2G MC100ELT20DTG MC100ELT20DTR2 MC100ELT20DTR2G MC100ELT21D MC100ELT21DG MC100ELT21DR2 MC100ELT21DR2G MC100ELT21DTG MC100ELT21DTR2 MC100ELT21DTR2G MC100ELT22D MC100ELT22DG MC100ELT22DR2
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MC100ELT20D
MC100ELT20DG
MC100ELT20DR2
MC100ELT20DR2G
MC100ELT20DTG
MC100ELT20DTR2
MC100ELT20DTR2G
MC100ELT21D
MC100ELT21DG
MC100ELT21DR2
SC64046
SC64046FN
SC64046FNG
SB99026MNG
sb99026mn
ECLTSSOP20EVB
MC10EL58D
NB3N3011
SB99026MNR2G
SC64029FN
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Untitled
Abstract: No abstract text available
Text: Clockworks SY10EL11/L SY100EL11/L 5 V /3 3V 1:2 D IF F E R E N T ,A L FANOUT BUFFER SEMICONDUCTOR FEATURES DESCRIPTION • 3.3V and 5V power supply options The SY10/1OOEL11/L are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L
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SY10EL11/L
SY100EL11/L
SY10/1OOEL11/L
E111A/L
E111A/L,
EL11/L
SY10EL11LZC
SY10EL11LZCTR
SY100EL11LZC
SY100EL11LZCTR
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Untitled
Abstract: No abstract text available
Text: ifll . « Clockworks SY10EL11 SY100EL11 DIFFERENTIAL FANOUT BUFFER CVAICD/'V SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES • 265ps propagation delay The SY10/100EL11 are 1:2 differential fanout gates. T hese d e vice s are fu n c tio n a lly s im ila r to the E111
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SY10EL11
SY100EL11
265ps
SY10/100EL11
SY10EL11ZC
SY10EL11ZCTR
SY100EL11ZC
SY100EL11ZCTR
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SY100EL11ZC
Abstract: No abstract text available
Text: « 5V/3.3V 1 :2 DIFFERENTIAL FANOUT BUFFER SYNERGY S E M IC O N D U C TO R FEATURES ^SYHJELI1/L S y Ìo o e u i/L DESCRIPTION • 3.3V and 5V power supply options The S Y 10/100E L11/L are 1:2 d iffe re n tia l fa n ou t gates. T hese devices are fu n ctio n a lly sim ilar to the E111A/L
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265ps
10/100E
L11/L
E111A/L
E111A/L,
SY10EL11ZC
SY10EL11ZCTR
SY100EL11ZC
SY100EL11ZCTR
SY10EL11LZC
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SY100EL11ZC
Abstract: SY10EL11ZC
Text: This Material Copyrighted By Its Respective Manufacturer Clockworks PRELIMINARY *SYNERGY SY10/100EL11 SEM IC O NDU CTO R AC ELECTRICAL CHARACTERISTICS VEE = V ee M in. to Vee (M ax.); V c o « G N D —40°C Symbol Parameter tPLH tPHL Propagation Delay to
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SY10/100EL11
225ned
SY10EL11ZC
SY100EL11ZC
0DD07Ã
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SY100EL11LZCTR
Abstract: SY100EL11ZCTR
Text: * 5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER SYNERGY SEMICONDUCTOR FEATURES ^ S Y ^ E L II/L SY100EL11/L DESCRIPTION • 3.3V and 5V power supply options T h e S Y 1 0 /1 0 0 E L 1 1 /L a re 1 :2 d iffe re n tia l fa n o u t g a te s . T h e s e d e v ic e s a re fu n c tio n a lly s im ila r to th e E 1 1 1 A /L
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SY100EL11/L
265ps
SY10EL11ZC
SY10EL11ZCTR
SY100EL11ZC
SY100EL11ZCTR
SY10EL11LZC
SY10EL11LZCTR
SY100EL11LZC
100EL11LZCTR
SY100EL11LZCTR
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Untitled
Abstract: No abstract text available
Text: «SYNERGY Clockworks PRELIMINARY SY10/100EL11 1:2 DIFFERENTIAL FANOUT BUFFER SEMICONDUCTOR DESCRIPTION FEATURES 265ps propagation delay The SY10EL/100EL11 are 1:2 differential fanout gates. These devices are functionally similar to the E111 devices, with higher performance capabilities. Having within-device
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SY10/100EL11
265ps
SY10EL/100EL11
SY10EL11ZC
SY100EL11ZC
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SY10EL11ZC
Abstract: max2905
Text: * Clockworks 1:2 DIFFERENTIAL FANOUT BUFFER SYNERGY SEMICONDUCTOR FEATURES P R E L IM IN A R Y SY10EL11 SY100EL11 D E S C R IP T IO N 265ps propagation delay 5ps skew between outputs High bandwidth output transitions Internal 75KD input pull-down resistors
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SY10EL11
SY100EL11
SY10EL/100EL11
SY10EL11ZC
SY100EL11ZC
max2905
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