Untitled
Abstract: No abstract text available
Text: SK50GD126T =' T BS UIA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT QI:9 =V T BS UI <I =V T @SX UI <I[; SEMITOP 4 IGBT Module .5'( @BXX Q YO J =' T ZX UI SB J @XX J ¥ BX Q =V T @BS UI @X `' =' T BS UI YB J =' T ZX UI aY J @XX
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SK50GD126T
b9-00&
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INJ818C8SRA
Abstract: No abstract text available
Text: I t e Symbol m C o n d i Limit t i o n Min Forward Voltage U n it Typ Max V, I [.= 1 0 m A Reverse Leakage Current I R V«= Luminous Intensity *2 Io I ,= 1 0 m A D C 5.0 Peak Emission Wavelength I p I F= 1 O m A D C 610 nm Spectral Line Half Width A X I ,.— 1 O m A
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INJ818C8SRA
KB-H-022-Ã
KB-H-022-0I8B
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Untitled
Abstract: No abstract text available
Text: SN74ALS233B 1 6x5 ASYNCHRONOUS FIRST-IN FIRST OUT MEMORIES D3487, MARCH 1990 Independent Aaychronou* Inputs and Output* DW OR N PACKAGE TOP VIEW 16 Word* by S Bits Each O E[ PU LL-1 [ ro u t ld ck[ DO I D 1[ Data Rataa From 0 to 40 MHz Fall-Through Tima. . . 14 na Typ
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SN74ALS233B
D3487,
80-bit
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AAY33
Abstract: germanium diode
Text: K C INTERNATIONAL 03E D | 0 0 D D 03 t . -¿^ 7 t, Type No. AAY33 GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 Telephone 617 681-0392 TeleFax (617) 681-9135 Telex 928377 FEATURES Low forw ard voltage drop— low power consumption
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00DQD3t.
AAY33
MIL-S-19500,
AAY33
germanium diode
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AAY32
Abstract: germanium diode "Germanium Diode" AAY3
Text: “ OBE D B K C INTERNATIONAL I #3 ^ □□□□□BS 4 | Type No. AAY32 GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 Telephone 617 681-0392 TeleFax (617) 681-9135 Telex 928377 FEATURES Low forward voltage drop— low power consumption
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AAY32
MIL-S-19500,
AAY32
germanium diode
"Germanium Diode"
AAY3
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AAY30
Abstract: germanium diode diode t
Text: K C INTERNATIONAL Ü3E D I 117^^03 D0G0D3 14 2 Type No. AAY30 T - 03 - GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKCInternational Electronics Inc. Telephone 617 681-0392 TeleFax (617) 681-9135 Telex 928377 FEATURES Low forw ard voltage drop— low power consumption
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ODGOD314
AAY30
T-03-Ã
MIL-S-19500,
AAY30
germanium diode
diode t
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PDF
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AAY42
Abstract: germanium diode
Text: B K C IN T E R N A T IO N A L D3E D I 117^03 □□0G037 ~T fl ^ 3 Type No. AAY42 GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKCInternational Electronicslnc. Telephone 617 681-0392 TeleFax (617) 681-9135 Telex 928377
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00Q37
AAY42
MIL-S-19500,
AAY42
germanium diode
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PDF
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7-segment 4 digit 5461
Abstract: TLR321 MT 6225 TLR-321 cd 5411 ic frequency divider rotary counter T-50-17 TC9109BP 4 pole 3 way rotary switch diagram 1 pole 4 way O E N rotary switch
Text: TENTATIVE Unit in ran , IS 10 TC9109BP CB TRANSCEIVER PLL FREQUENCY SYNTHESIZER • TC91Ö9BP C-MOS LSI aay be used a 40 channels CB transceiver frequency synthesizer. v • Included high speed programmable counter, operated direct division of VCO can be
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TC9109BP
TC9109BP
T-50-17
0D17fl3b
7-segment 4 digit 5461
TLR321
MT 6225
TLR-321
cd 5411 ic
frequency divider rotary counter
T-50-17
4 pole 3 way rotary switch diagram
1 pole 4 way O E N rotary switch
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PDF
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MX580JCSA
Abstract: MX580JESA MX580JH MX580KCSA MX580KESA MX580KH MX580LCSA MX580LH MX580MH CAN36
Text: /\AAYA/V\ H ig h P re c isio n +2.5 V olt R eference _ General Description _Features TheM X 580 is a high performance three-terminal volt age reference which provides a stable +2.5V source for 8, 10, and 12-bit data converters and analog
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TheMX580
12-bit
10ppm/Â
MX580JCSA
MX580JESA
MX580JH
MX580KCSA
MX580KESA
MX580KH
MX580LCSA
MX580LH
MX580MH
CAN36
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PDF
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Untitled
Abstract: No abstract text available
Text: .± [4-4+02 . 6 210.3 5 0 0.2 c o aayh 4 0.1 ll .± 1 5 0.1 I 1 U 1.27 0 4 0.1 .+ o • 1 . + 0 15 0.1 0.15 Fig. 1-2 Outline Dimensions SOP8 BR9010F-W 3.0-► ± 0.2 4 8 c o o ■ +i H fl H H CM, .O +l i CO O H H H H 9 CD ■O :t +1 LO o ■ ■ 5
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BR9010F-W)
BR9010RFV-W)
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PDF
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Germanium diode
Abstract: AAZ15 germanium diode AAZ17 diode AA143 Germanium Diode aa143 DIODE AA143 AAZ15 AAZ18 AAY30 germanium diode GOLD
Text: B K C INTERNATIONAL 1 -4 30E D BKC International Electronics Inc. • 117W3 0000314 Ö ■ ' T ’O V ö ‘7 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 TYPE AA143 Low forward voltage drop
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AA143
500mA
100uA
MIL-S-19500,
Germanium diode
AAZ15 germanium diode
AAZ17 diode
AA143
Germanium Diode aa143
DIODE AA143
AAZ15
AAZ18
AAY30
germanium diode GOLD
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PDF
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MSC1002
Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition
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28Vdc
MSC1002
AVIA c cube
IC CD 4440 amplifier circuit diagram
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PDF
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fujitsu 1988
Abstract: 100K series ECL 262144-B MBM100C504 D-03C
Text: BICMOS 2621M-BIT ECL RANDOM ACCESS MEMORY TS324-A888 August 1988 262144-BIT BICMOS ECL RANDOM ACCESS MEMORY Pin Assignments for DIP i 'c e S% - Q NC Dll DI2 DI3 DI4 D01 D02 VCC VCC D03 D04 A0 Al A2 A3 A4 The Fujitsu MBM100C504 is fully decoded 262144 bit BICMOS
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2621M-BIT
TS324-A888
262144-BIT
MBM100C504
32-pin
28-pin
fujitsu 1988
100K series ECL
262144-B
D-03C
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PDF
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Untitled
Abstract: No abstract text available
Text: BICMOS 262144-BIT ECL RANDOM ACCESS MEMORY TS324-A888 August 1988 262144-BIT BICMOS ECL RANDOM ACCESS MEMORY tOVAN. 'CE Pin Assignments for DIP The Fujitsu MBM100C504 is fully decoded 262144 bit BICMOSIß'O. ECL random access memory designed for main memory, control
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262144-BIT
TS324-A888
262144-BIT
MBM100C504
MBM10DC504
32-pin
28-pin
MBM100CS04-15
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PDF
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MACH210
Abstract: No abstract text available
Text: FINAL COM’L: -7/10/12/15/20, Q-12/15/20 a IND: -12/14/18/24 MACH21OA-7/10/12 MACH210-12/15/20 MACH210AQ-12/15/20 Advanced Micro Devices High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 44 Pins ■ Peripheral Component Interconnect PCI
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Q-12/15/20
MACH21OA-7/10/12
MACH210-12/15/20
MACH210AQ-12/15/20
PAL22V16â
MACH110,
MACH111,
MACH211,
MACH215
MACH210
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module HYS64V2100G C U-10 HYS72V2100G(C)U-10 168 pin unbuffered DIMM Modules Advanced Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module • 1 bank 2M x 64, 2M x 72 organisation
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64-Bit
72-Bit
HYS64V2100G
HYS72V2100G
19-2S
HYS64
V2100G
535bGS
I1524Ã
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PDF
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Untitled
Abstract: No abstract text available
Text: X9314 Terminal Voltages ±5V, 32 Taps, Log Taper Data Sheet September 5, 2006 Single Digitally Controlled Potentiometer XDCP FN8178.2 Features • Solid State Potentiometer The Intersil X9314 is a solid state nonvolatile potentiometer and is ideal for digitally controlled resistance trimming.
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X9314
FN8178
X9314
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X9314WMI
Abstract: X9314 X9314WP X9314WPI X9314WS X9314WSI X9314WSIZ X9314WSZ X9314WMIZ-3 X9314WMI-3
Text: X9314 Terminal Voltages ±5V, 32 Taps, Log Taper Data Sheet September 5, 2006 Single Digitally Controlled Potentiometer XDCP FN8178.2 Features • Solid State Potentiometer The Intersil X9314 is a solid state nonvolatile potentiometer and is ideal for digitally controlled resistance trimming.
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X9314
FN8178
X9314
X9314WMI
X9314WP
X9314WPI
X9314WS
X9314WSI
X9314WSIZ
X9314WSZ
X9314WMIZ-3
X9314WMI-3
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PDF
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74F163
Abstract: 74F161A motorola 74F161 74F161A
Text: M MOTOROLA M C 54F/74F161A M C 54F/74F163 A SYNCHRONOUS PRESETTABLE BINARY COUNTER ¿ — The MC54/74F161A and MC54/74F163A are high-speed synchronous modulo-16 binary counters. They are synchronously presettable fo r application in program mable dividers and have tw o types of Count Enable inputs plus a Terminal Count
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54F/74F161A
54F/74F163
MC54/74F161A
MC54/74F163A
modulo-16
74F161A
74F163A
74F163
74F161A motorola
74F161
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PDF
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Untitled
Abstract: No abstract text available
Text: DS2154 PRELIMINARY DALLAS SEMICONDUCTOR D S2154 Enhanced E1 Single Chip Transceiver PACKAGE OUTLINE FEATURES • Complete E1 CEPT PCM-30/ISDN-PRI transceiver functionality • Onboard long and short haul line interface for dock/ data recovery and waveshaping
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DS2154
S2154
PCM-30/ISDN-PRI
32-bit
128-bit
100-PIN
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PDF
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lp 832
Abstract: MF431 MF432 FDDI 1320nm LED MF431 ST
Text: F431 Datacom, Telecom, General Purpose LED MF431 ST Applications Description « FDDI This LED is designed for • ATM-SDH/SONET 155Mbps Datacom, Telecom and General • Intra-Office Telecommunications • General Purpose Purpose Applications. It has a long wavelength LED for links up
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MF431
155Mbps
1320nm
125MHz
5/125pm
125Mbps.
ATM155Mbps.
MF432
lp 832
FDDI
1320nm LED
MF431 ST
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PDF
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1N589
Abstract: IN5809 1v500 1M5811 JANTX 1N5811 DIODE 1N5804 1N5896 j 5804 ns802 1N5809 equivalent
Text: MIL SPECS 44E » The documentation and proc*»» conversion m w r M necessary to comply with this revision shall be completed by 25 Apr 93. • □□□□155 0032612 7 ■ M I L S 1- 1 IINCH-POUNDj I . — I | j j ML-S-19S00/477B 25 January 1993
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GD0D12S
003S612
ml-S-19S00/477b
n1l-s-19s00/477a
1n58q2,
1ns804,
1ns806,
1ns807,
1h5809,
1ns811,
1N589
IN5809
1v500
1M5811
JANTX 1N5811
DIODE 1N5804
1N5896
j 5804
ns802
1N5809 equivalent
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PDF
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MK1708
Abstract: CY25560 P1708C P1708CF-08SR P1708CF-08TR
Text: P1708C Notebook LCD Panel EMI Reduction IC Features Product Description • FCC approved method of EMI attenuation. • Generates a low EMI spread spectrum clock of the input frequency. • Optimized for frequency range from 50 to 110MHz. • Internal loop filter minimizes external components and
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Original
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P1708C
110MHz.
P1708C
MK1708
CY25560
P1708CF-08SR
P1708CF-08TR
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PDF
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Untitled
Abstract: No abstract text available
Text: P1708C Notebook LCD Panel EMI Reduction IC Features Product Description • FCC approved method of EMI attenuation. • Generates a low EMI spread spectrum clock of the input frequency. • Optimized for frequency range from 50 to 110MHz. • Internal loop filter minimizes external components and
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P1708C
110MHz.
54MHz
65MHz
81MHz
108MHz
MK1708
CY25560.
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PDF
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