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    T 3866 TRANSISTOR Search Results

    T 3866 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    T 3866 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    t 3866 power transistor

    Abstract: t 3866 t 3866 transistor 3866 transistor transistor t 3866 C 3866 3866 power transistor TRANSISTOR BFR97 c 3866 transistor Transistor BFR 97
    Text: 2N 3866 M ULTI-EM ITTER SILICON PLANAR NPN 97 V H F -U H F O S C ILL A T O R POWER A M P L IF IE R The 2N 3866/B F R 97 is a silicon planar epitaxial NPN transistor in Jedec T O -3 9 metal case. It is designed fo r V H F -U H F class A , B, or C am plifier circuits and oscillator applications.


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    3866/BFR BFR97 t 3866 power transistor t 3866 t 3866 transistor 3866 transistor transistor t 3866 C 3866 3866 power transistor TRANSISTOR BFR97 c 3866 transistor Transistor BFR 97 PDF

    Untitled

    Abstract: No abstract text available
    Text: S GS-TH O M SO N ?1C D î'ü S T E B ? ; ODGMfitiO - 0 | rT " 3 3 - 6 f THOMSON SEMICONDUCTORS wideband VHF - UHF class C for ECM and radio links applications V cc PACKAGE TYPE ^out Frequency m in range M H z CONFIG. (V ) • (W) 2N 3866 2N 5090 2N 5635


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    T0-60 tCB-400) PDF

    2N3866

    Abstract: 2n4427 philips ferroxcube 4312 020 36690 2N3866 class-a Transistor 2N3866 2N3866 metal Philips 4312 020 4312 020 36640 transistor 2N4427 2N3866 application
    Text: • bb53^31 N AflER 0Q2T7Ö1 b02 * A P X PHILIPS/DISCRETE bTE 2N3866 2N4427 P SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N o verlay transistors in T O -3 9 m etal envelopes w ith the c o lle c to r connected to the case. T he devices are p rim a rily intended fo r class-A, B o r C am plifiers, frequency m u ltip lie r and o sc illa to r circuits.


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    bb53131 0Q217Ã 2N3866 2N4427 bb53T31 2n4427 philips ferroxcube 4312 020 36690 2N3866 class-a Transistor 2N3866 2N3866 metal Philips 4312 020 4312 020 36640 transistor 2N4427 2N3866 application PDF

    2n4427

    Abstract: 2N3866 Transistor 2N3866 2N3866 metal 2N3866 RF CLASS A Philips 4312 020 RF 2N3866 2N3866 class-a 2n3866 philips 4312 020 36640
    Text: b5E D 711Dfl2b 00L3b7fl CHG • PHIN 2N3866 2N4427 PHILIPS INTERNATIONAL SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N overlay transistors in TO-39 metal envelopes with the collector connected to the case. The devices are primarily intended for class-A, B or C amplifiers, frequency multiplier and oscillator circuits.


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    711Dfl2b 00L3b7fl 2N3866 2N4427 2N3866 711002b 00b3bà 2n4427 Transistor 2N3866 2N3866 metal 2N3866 RF CLASS A Philips 4312 020 RF 2N3866 2N3866 class-a 2n3866 philips 4312 020 36640 PDF

    t 3866 power transistor

    Abstract: transistor 3866 s t 3866 transistor transistor 3866
    Text: • bb53131 0031761 b03 H A P X N AflER PHILIPS/DISCRETE 2N3866 2N4427 blE D SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N overlay transistors in TO-39 metal envelopes with the collector connected to the case. The devices are prim arily intended fo r class-A, B or C amplifiers, frequency m ultiplier and oscillator circuits.


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    bb53131 2N3866 2N4427 t 3866 power transistor transistor 3866 s t 3866 transistor transistor 3866 PDF

    BFR90 transistor

    Abstract: 2n5583 mrf502 transistor 2N5160 MRF531 transistor bfr96 BFR91 BFR91 transistor 2N3866 2N5032
    Text: f Device Type ^ Pout O u tp u t Power Watts g PE Power Gain dB M in. V cc S upply Voltage V o lts Package 10 10 8.4 8.2 7.6 6.0 28 28 28 28 28 28 TO -39 TO-39 144B-04 145A-07 145A-07 211-10 A 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 207A-01 TO-39 305-01


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    2N3866 2N3553 2N5641 144B-04 45A-07 2N5643 2N6166 MRF509 07A-01 BFR90 transistor 2n5583 mrf502 transistor 2N5160 MRF531 transistor bfr96 BFR91 BFR91 transistor 2N5032 PDF

    power amplifier IC 4440

    Abstract: BFR99 t 3866 transistor BFR99A CE-28 bf 225 vhf/SRF 3733 t 3866 power transistor tic 1060 BFR38
    Text: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS M0Ê @IlLi gîK(S R!10(gi RF & MICROWAVE TRANSISTORS TO-39 TO-60 .380 NARROW 4L STUD .500 4L STUD .380 4L STUD WIDEBAND VHF - UHF CLASS C FOR ECM AND RADIO LINKS APPLICATIONS Type PIN Package Config. (V) pout min


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    TQ-60 T0-60 BSX33 2N956 power amplifier IC 4440 BFR99 t 3866 transistor BFR99A CE-28 bf 225 vhf/SRF 3733 t 3866 power transistor tic 1060 BFR38 PDF

    uhf amplifier design BFR90

    Abstract: 2N3866 MOTOROLA 2n5160 MRF306 MRF531 2n5583 MOTOROLA 2N5179 MRF905 2n5179 BFR91
    Text: f Device Type ^ Pout Output Power Watts g PE Power Gain dB Min. Vcc Supply Voltage Volts Package 10 10 8.4 8.2 7.6 6.0 28 28 28 28 28 28 TO -39 TO-39 144B-04 145A-07 145A-07 211-10 A 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 207A-01 TO-39 305-01 305A-01


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    2N3866 2N3553 2N5641 144B-04 45A-07 2N5643 2N6166 MRF509 07A-01 uhf amplifier design BFR90 2N3866 MOTOROLA 2n5160 MRF306 MRF531 2n5583 MOTOROLA 2N5179 MRF905 2n5179 BFR91 PDF

    BFR99

    Abstract: BC377 UHF UHF Transistors transistor 2n 3839 BFR38 t 3866 transistor 2N956 BFX89 BSX33 uhf amplifier
    Text: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL SMALL SIGNAL TRANSISTORS TRANSISTORS FOR RADIO FREQUENCY APPLICATIONS Noise figure Trans. Freq. Max ratings Polar. Type Main unction Package •c NF (MHz (mA) 1000 le f pg m (mA) (MHz) m 3 3.5 3 800 850 1000 typ 1200


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    BFR38 BSX33 2N956 BFR99 BC377 UHF UHF Transistors transistor 2n 3839 t 3866 transistor BFX89 uhf amplifier PDF

    BFR 450

    Abstract: BFW64 tpl 550 BFW17A BFR38 BFW63 BFX19 BFT95H BFR36 BFR96
    Text: PROFESSIONAL TRANSISTORS continued ex. (5) (s \ œ •Q o œ -a Ll_ z £3. > 'i < o LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 B FR 37 NPN B FR 38 PNP BFR 90* NPN NPN B FR 91* B F R 96* NPN BF R97/2N 3866 NPN B F R 98/2N 4427 NPN PNP BFR 99 PNP BFT95


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    BFR10 BFR36 BFR96* 97/2N 98/BFX BFX18 BFR 450 BFW64 tpl 550 BFW17A BFR38 BFW63 BFX19 BFT95H BFR96 PDF

    BFR99

    Abstract: BFR38 BC377 BFR36 BFR99A bfr18 2N3137 2N5109 LH105 t 3866 transistor
    Text: /IT SGS-THOMSON TELECOM AND DATA COMMUNICATIONS * 7# »»lajgraoraotss SMALL SIGNAL TRANSISTORS C haracteristics Max ratings Polar. V CEO V *C (m A) Type P .o, (m W ) *T (M H z) ar d NF (dB) NPN NPN NPN PNP NPN NPN NPN 15 15 15 25 20 30 20 25 50 50 50 200


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    BFY90 2N918 BFX73 BFR99A 2N3137 BFR36 2N5109 LH1056 LH1061 BSX33 BFR99 BFR38 BC377 bfr18 LH105 t 3866 transistor PDF

    rca 40290

    Abstract: RCA 2N3866 rca 40280 2N5070 60890 2N4932 2n4933 rca 2N5070 2N5913 N4012
    Text: RF Power Transistors A w ide variety o f rf types capable o f h andling a broad range¡of power from hf to m ic ro w a v e frequencies 25, W at 30 MHz to 1 W at 1 GHz , sup- Applications E ie~nm H T ft 7o I T0-60, and TO-72 packages. . l - and S-band radar and telem etry


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    to-72 1N1183A-1 1190AA D2406F-D2406M* 1N3879-1N3883* D2412F-D2412M* 1N3889-1N3893* D2520F-D2520M* 1N3899-1N3903* 1N3909-1 rca 40290 RCA 2N3866 rca 40280 2N5070 60890 2N4932 2n4933 rca 2N5070 2N5913 N4012 PDF

    BFY70

    Abstract: PT8828 CM45-12A THB598 PT8811 BLY22 sd1451 MRF245 PT8710 PT9780
    Text: wideband VHF - UHF class C for E C M and radio links applications applications large bande VHF-UHF, classe C, contre mesure et faisceaux hertziens PACKAGE TYPE C O NFIG. Pout Frequency Pin range W (W) (M Hz) Vcc (V) 1H0MS0N-CSF GP min (dB) m in (% ) m ax


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    2N6082 BM80-12 SD1416 MM1601 MRF631 SD1144 PT8549 SD1214 N5054 2N3553 BFY70 PT8828 CM45-12A THB598 PT8811 BLY22 sd1451 MRF245 PT8710 PT9780 PDF

    LA 4440 IC

    Abstract: L 4440 ic 4440 3TE445 3TX603 BDY15 BDY16 bd 106 case 603 b bd 3055
    Text: NPN Silicon Power Transistors NPN Silicon Epitaxial Planar Transistors in SOT-9 SO-55 metal case For l.f. driver and output stages and high power switching Type Maximum Ratings Characteristics at Tlimh ~ 25 °C @ VCE = 2 V fc - 0,5 A @ "^case — 25 °C


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    BDY15 LA 4440 IC L 4440 ic 4440 3TE445 3TX603 BDY16 bd 106 case 603 b bd 3055 PDF

    MPS3866

    Abstract: transistor 3866 s t 3866 transistor
    Text: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor • MPS3866 MRF3866R2 Tape and reel packaging options available for MRF3866R2: R2 suffix = 2,500 units per reel lc = 400 m A H IG H -F R E Q U E N C Y T R A N S IS T O R S


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    MRF3866R2: MPS3866 MRF3866R2 MRF3866R2 transistor 3866 s t 3866 transistor PDF

    BFR 450

    Abstract: BFR36 BFY 93 bft95 BFw 94 BFR10 BFR96 BFT95H BFW16A BFW17A
    Text: PROFESSIONAL TRANSISTORS continued ex. (5) (s \ œ •Q o œ -a Ll_ z £3. > 'i < o LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 B FR 37 NPN B FR 38 PNP BFR 90* NPN NPN B FR 91* B F R 96* NPN BF R97/2N 3866 NPN B F R 98/2N 4427 NPN PNP BFR 99 PNP BFT95


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    BFR10 BFR36 BFR96* 97/2N BFR16 BFX31 BFX37 BFW43 BFW44 BFX90 BFR 450 BFY 93 bft95 BFw 94 BFR96 BFT95H BFW16A BFW17A PDF

    BFR38

    Abstract: BFR99 2N6080 2N956 BFX89 BSX33 9552N TO-117SL XO-72 pnp 2222a
    Text: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS G iflO M l(L g m M § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022


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    XO-72 O-117SL O-117SL 2N6080 BSX33 2N956 BFR38 BFR99 BFX89 9552N TO-117SL pnp 2222a PDF

    transistor rc 3866

    Abstract: transistor 3866 s rc 3866 t 3866 power transistor t 3866 transistor 3866 transistor transistor t 3866 c 3866 transistor transistor 3866 mps1983
    Text: MPS1983 See MPS901 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MPS3866 D ie S o u rc e S a m e as 2N 3866 The RF Line 1C = 400 m A M A X IM U M RATINGS Symbol Value Unit C ollector-Em itter Voltage VCEO 30 Vdc Collector-Base Voltage VCBO 55 Vdc Emitter-Base Voltage


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    MPS1983 MPS901) MPS3866 transistor rc 3866 transistor 3866 s rc 3866 t 3866 power transistor t 3866 transistor 3866 transistor transistor t 3866 c 3866 transistor transistor 3866 mps1983 PDF

    Transistor BFR 96

    Abstract: BFR 30 transistor Transistor BFR 35 BFT95 bfx19 bsx30 BFR 80 BFW17A BFR10 BFR36
    Text: PROFESSIONAL TRANSISTORS continued m u > (s (5) \ œ œ •Q -a o ex. Ll_ z r i o £3. > < e X < o LU U_ .£= BFR10 N PN N PN BFR 11 NPIM B F R 36 BFR 37 N PN BFR 38 PNP BFR 90* NPN N PN BFR 91* B F R 96* N PN BFR9 7 /2N 3866 NPN B F R 98/2N 4427 NPN PNP


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    BFR10 BFR36 BFR96* 97/2N Transistor BFR 96 BFR 30 transistor Transistor BFR 35 BFT95 bfx19 bsx30 BFR 80 BFW17A PDF

    MJ2955 equivalent

    Abstract: MPS3640 equivalent 276-2043 MPS918 equivalent 276-2027 2N3053 equivalent MJE34 pnp 2SB22 2N3055 equivalent 2N3819 equivalent
    Text: TRANSISTORS BIPOLAR Direct Commercial Equivalent C atalog N um ber M at. Appli. Polarity Pow er Diss. fT Typ ica l @ 25° c: M Hz Free Air v EBO V v CBO VCEQ V V >C Max hFE Max 5>v c e : V 'C B O at max mA VCB Case style 276-2001 ÏN 1 3 0 4 G s NPN 150m W


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    N1304 150mW 300mA 2SD187 200mW 150mA 2SA221 2SB22/ORN 170mW 2SB22/YEL MJ2955 equivalent MPS3640 equivalent 276-2043 MPS918 equivalent 276-2027 2N3053 equivalent MJE34 pnp 2SB22 2N3055 equivalent 2N3819 equivalent PDF

    transistor rc 3866

    Abstract: rc 3866 transistor 3866 s t 3866 power transistor Transistor 2N5160 transistor t 3866 2N5160 t 3866 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5160 T h e R F Line 1C = - 4 0 0 mA POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR PNP SILICON . . . designed fo r am plifier, freq u e n cy m ultiplier or o scillato r applica­ tion s in m ilitary and industrial equipm ent. Su itab le fo r use as C lass A,


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    2N5160 transistor rc 3866 rc 3866 transistor 3866 s t 3866 power transistor Transistor 2N5160 transistor t 3866 2N5160 t 3866 transistor PDF

    2sd 4242

    Abstract: c 3866 2SC4977 C3866 c 4242 c3505 C2656 2sd2431 I50F C4383
    Text: BIPOLAR TRANSISTORS Quick Selection Guide Comprehensive chart C o lle c to r c u rre n t le co n t. A P N P t r a n s is t o r VcEO (sus) V o lts m in . C o lle c to r-to e m itt e r v o lta g e 40 50 80 100 120 180 200 2 50 300 320 350 400 2S C 2929 3 2 S D 1 1 57


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    B1532 7S0916 2SD2431 1300M I200E I200ZP 2sd 4242 c 3866 2SC4977 C3866 c 4242 c3505 C2656 I50F C4383 PDF

    THB598

    Abstract: C-22-B C22B cb307 THX 230 5352N CB-295 2n 531
    Text: wideband VHF - UHF class C for E C M and radio links applications applications large bande VHF-UHF, classe C, contre mesure et faisceaux hertziens PACKAGE TYPE C O NFIG. Pout Frequency Pin range W (W) (M Hz) Vcc (V) 1H0MS0N-CSF GP min (dB) m in (% ) 8 7


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    CB-27) CB-307) O-129 CB-295) CB-312) CB-289) CB-286) ICB-298) CB-400) CB-293) THB598 C-22-B C22B cb307 THX 230 5352N CB-295 2n 531 PDF

    t 3866 power transistor

    Abstract: transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor
    Text: 2N3553 SILICON NPN VHF POWER TRANSISTOR 571 HIGH GAIN DRIVE R FOR 28 V FM APPLICATIONS • • 2.5 W a t 175 MHz Minimum Gain 10 dB mechanical data • • - 6 , 6 - » -12,7 mm - -


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    2N3553 O-117 O-128 O-131 O-129 20PEP t 3866 power transistor transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor PDF