BUK427-600A
Abstract: BUK427-600B EX-45
Text: N AMER P H I L I P S / D I S C R E T E SSE D • 1^53=131 O G E O S Ô O □ ■ P o w erM O S tra n s is to r - B U K 427-600A B U K 427-600B T - 3 7 - II QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
|
OCR Scan
|
BUK427-600A
BUK427-600B
T-37-
BUK427
-600A
-600B
BUK427-600B
EX-45
|
PDF
|
Untitled
Abstract: No abstract text available
Text: OCT 2 a 1 9* MIC426/427/428 Dual Power MOSFET Driver SE M IC O N D U C T O R THE INTELLIGENT POWER COMPANY General Description Features The MIC426/427/428 are dual CMOS high speed drivers. A TTL/CMOS input voltage level is translated into an output voltage level swing equalling the supply. The CMOS output
|
OCR Scan
|
MIC426/427/428
MIC426/427/428
|
PDF
|
NEL230153
Abstract: GG01 NEL2300 transistor k42 3500 2301 151 k424 LARGE SIGNAL IMPEDANCES transistor T330 NEL2301-53 NEL2303
Text: NE C / CALIFORNIA NEC 1SE D h 427 414 0001275 T 'S h 't l T - 3 3 -Ö ? Ö NEL2300 SERIES CLASS A, 2.3 GHz, 15 VOLT POWER TRANSISTOR ABSOLU TE MAXIMUM RATINGS FEATURES PARAMETERS SYMBOLS • HIGH LINEAR POWER: PidB = 2.8 W UNITS jta = 2 5 °q RATINGS • HIGH GAIN: G mb = 6.5 dB
|
OCR Scan
|
h427414
T-33-T-
NEL2300
V3301
NEL230353
NEL230153
GG01
transistor k42
3500 2301 151
k424
LARGE SIGNAL IMPEDANCES
transistor T330
NEL2301-53
NEL2303
|
PDF
|
230Z
Abstract: V3301 NEL230253 L230C NEL2300 NEL2301 NEL2302 NEL2303 2SG 111 TRANSISTOR 2SG 111
Text: NE C/ CALIFORNIA NEC 1SE D h 427 414 00 01 275 Ö T- 33-0? NEL2300 SERIES CLASS A, 2.3 GHz, 15 VOLT POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS FEATURES PARAMETERS SYMBOLS • HIGH LINEAR POWER: PidB = 2.8 W UNITS çta = 2 5 °g RATINGS • HIGH GAIN: G mb = 6.5 dB
|
OCR Scan
|
h427414
T-33-T-
NEL2300
Emitterj17
bHS7414
V3301
-r-33
NEL230353
230Z
V3301
NEL230253
L230C
NEL2301
NEL2302
NEL2303
2SG 111
TRANSISTOR 2SG 111
|
PDF
|
6330 SERIES SWITCHING REGULATORS operation
Abstract: transistor TO-3 Outline Dimensions LAS6331A voltage regulators 6 amp to3 las6330p1 voltage regulators 10 amp to3 LAS6430P LAS 6330P1
Text: SEMTECH SflE D CORP • 0DD30bô 427 « S E T LAS-6330 Las-6430 3 AMP SWITCHING REGULATORS ABSOLUTE MAXIMUM RATINGS SYM BO L PARAM ETER FEATURES • • • • • Control Circuit/ Output Collector Voltage LAS-6330/31 LAS-6430/31 Vcc/Co Power Dissipation
|
OCR Scan
|
0DD30bô
LAS-6330
LAS-6330/31
LAS-6430/31
LAS-6330A/31A
G00307E?
LAS-6330
LAS-6430
LAS-6X30,
6330 SERIES SWITCHING REGULATORS operation
transistor TO-3 Outline Dimensions
LAS6331A
voltage regulators 6 amp to3
las6330p1
voltage regulators 10 amp to3
LAS6430P
LAS 6330P1
|
PDF
|
u 327 md
Abstract: U427 T 427 transistor U427B u327md U428 427 DIP8 U327 U428B-FP RC transmitter
Text: ^ MME fl'iSDOTb 0GlGbS3 7 W t A L G G » U 427 B • U 428 B-FP DRIVER FOR IR TRANSMITTER DIODES CURRENT SINK 'T' 3 “07 w “ TELEFUNKEN ELECTRONIC Tech n o lo g y: Bipolar . Features: • Current stabilisation starts at Vr = 1.2 V • Control voltage VJ = 3 . 10 V
|
OCR Scan
|
|
PDF
|
2SD427
Abstract: Transistor 2SD427 2SD427R 2sd427 transistor q406 250427 2sd427-r
Text: 2 s d 427 SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR o m tn tm m o Power A m p l i f i e r A p p l i c a t i o n s Unit in m m *2 5 .0 MAX, • ^ i' 0 * ia, • &i E t t o : P 0 = sow : v 0EQ = 2 SB 5 5 7 5 0 J K 120V i i t t H i - F i Hr — i * 4 * 7 's T'tti £ S K f t j § T-J-0
|
OCR Scan
|
2sd427
2SD427
2SD427â
Transistor 2SD427
2SD427R
2sd427 transistor
q406
250427
2sd427-r
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 200mA Ignition Pre-Driver Description T h e C S-427 is a m on olith ic integrated circu it w h ich drives an extern al p o w er transisto r to start and reg u late in ductive load cu rrents. A co n tro l in put triggers th e o n -ch ip outpu t transisto r to satu
|
OCR Scan
|
200mA
S-427
S-427
CS-427N8
|
PDF
|
smd transistor AFQ 36
Abstract: P-TQ220-5-1 transistor c160 type TLE4270 smd transistor 7D QK55 TRANSISTOR T0220 AEP01922 AEP02172 Q67000-A9209
Text: fi235bD5 O O l b b l ? ATT S IEM EN S T L E 427 0 5-V Low -D ro p Fixed V o ltage R egulator Features Output voltage tolerance < ± 2 % Low-drop voltage Integrated overtemperature protection Reverse polarity protection Input voltage up to 42 V Overvoltage protection up to 65 V < 400 ms
|
OCR Scan
|
fi235b05
Q67000-A9209
P-TQ220-5-1
Q67000-A9243
P-T0220-5-2
Q67006-A9201
P-TQ220-5-8
0235bOS
P-T0220-5-8
smd transistor AFQ 36
P-TQ220-5-1
transistor c160
type TLE4270
smd transistor 7D
QK55
TRANSISTOR T0220
AEP01922
AEP02172
|
PDF
|
IC4424A
Abstract: IC4426 IC4424CN 4425C IC4425A 4425cn BBU50 IC4423A
Text: General Description F:eatures The M IC4423/4424/4425 family are highly reliable B iC M O S / D M O S bu ffer/d river/M O SFE T drivers. They are higher output current version s of the M IC4426/4427/4428, w hich are im proved versions of the MIC426/427/428. All three fam ilies
|
OCR Scan
|
IC4423/4424/4425
IC4426/4427/4428,
MIC426/427/428.
MIC4423/442
MIC4423/4424/4425
MIC4423XWM
MIC4424XNAJ
IC4425xW
16-lead
IC4424A
IC4426
IC4424CN
4425C
IC4425A
4425cn
BBU50
IC4423A
|
PDF
|
k427 transistor
Abstract: No abstract text available
Text: N ANER PHILIPS/DISCRETE ^ 5 3 7 3 1 0050260 0 2SE D PowerMOS transistor B U K 4 2 7-60 0 A B U K 427-600B G E N E R A L D E S C R IP T IO N N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in
|
OCR Scan
|
427-600B
BUK427
-600A
-600B
bb53131
7-600A
k427 transistor
|
PDF
|
transistor d2271
Abstract: D2271 AN5296 Application note CA3018 CA3018A CA3018
Text: HARRIS bl E SEfllCOND S E C T O R D 43DE271 CA3018 ffl H A R R IS W □□Mb'ìflS 427 • H AS S E M I C O N D U C T O R General Purpose Transistor Arrays M arch 1993 Features Description • Matched Monolithic General Purpose Transistors T h e C A 3 0 1 8 a n d C A 3 0 1 8 A c o n s is t o f fo u r g e n e ra l p u rp o s e
|
OCR Scan
|
43DE271
CA3018
CA3018
CA3018A
CA3018,
CA3018A
transistor d2271
D2271
AN5296 Application note CA3018
|
PDF
|
BF-139
Abstract: bf139 transistors BC 549 transistors TO-92 case bc bc 540 BC211 8C547 J BC211 CL16F CTO-92
Text: S ilic o n N P N transistors, general purpose continued Tam b- 25 °C Transistors N P N silicium , usage généra! (suite) tS v CEO (V) h2 ie (V) ic / 'b max ImA) max ImA) min 40 250 150 1 1000/100 300 § 341 40 250 150 1 1000/100 300 § 341 45 110 240 2
|
OCR Scan
|
|
PDF
|
T 427 transistor
Abstract: u 327 md u327md u427 U327 tc 427 ic
Text: ^ MME D I fiTSDGTb GGlQbS3 7 • ALGG . - U 427 B •U 428 B-FP TELEFUNKEN ELECTRONIC DRIVER FOR IR TRANSMITTER DIODES CURRENT SINK r V 5 lA 3 > - O l- Technology: Bipolar Features: • • Constant current • Current stabilisation starts at V7 = 1 .2 V
|
OCR Scan
|
|
PDF
|
|
smd transistor A1A
Abstract: 5962-8850302PX
Text: toaaan ooootm mm2 • mrl MIC426/427/428 Dual Power MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC426/427/428 are dual high speed drivers. A TTL/ C M O S input voltage level is translated into an output voltage level swing equalling the supply. The D M O S output will be
|
OCR Scan
|
MIC426/427/428
MIC426/427/428
smd transistor A1A
5962-8850302PX
|
PDF
|
MIC426AJ
Abstract: IC428 TL494 MIC426 MIC426CN tl494 dc to ac inverter tl494 inverter converter MIC426AJBQ MMH0026 MIC4261
Text: MIC426/427/428 Dual Power MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC426/427/428 are dual high speed drivers. A TTU CMOS input voltage level is translated into an output voltage level swing equalling the supply. The DMOS output will be
|
OCR Scan
|
MIC426/427/428
MIC426/MIC427/MIC428
1000pF
MIC426/427/428
MIC426AJ
IC428
TL494
MIC426
MIC426CN
tl494 dc to ac inverter
tl494 inverter converter
MIC426AJBQ
MMH0026
MIC4261
|
PDF
|
6 pin smd power control ic 18v
Abstract: mic421 MIC426AJ WC42 5962-8850301PX 5v dc power supply with TL494 tl494 dc to ac
Text: _ M1C426/427/428 Dual 1.5A Low-Side MOSFET Driver Blpolar/CMOS/DMOS Process General Description Features The MIC426/427/428 are dual high speed drivers. A TTL/ CMOS input voltage level is translated into an output voltage level swing equalling the supply. The DMOS output will be
|
OCR Scan
|
M1C426/427/428
MIC426/427/428
1000pF
C426/427/428
6 pin smd power control ic 18v
mic421
MIC426AJ
WC42
5962-8850301PX
5v dc power supply with TL494
tl494 dc to ac
|
PDF
|
MIC427AJ
Abstract: tl494 "analog devices" tl494 dc to ac ic428
Text: MIC426/427/428 Dual 1.5A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC426/427/428 are dual high speed drivers. A TTL7 CMOS input voltage level is translated into an output voltage level swing equalling the supply. The DMOS output will be
|
OCR Scan
|
MIC426/427/428
MIC426/427/428
1000pF
MIC427AJ
tl494 "analog devices"
tl494 dc to ac
ic428
|
PDF
|
2SC2217
Abstract: 2SC2367 NE21935 Ic 9148
Text: NEC" NE21900 NE21903 NE21908 NE21935 NPN SILICON HIGH FREQUENCY TRANSISTOR NOT RECOMMENDED FOR NEW DESIGN FEATURES_ DESCRIPTION • HIGH fT: 8 GHz The NE219 series of NPN silicon bipolar transistors is designedtor small signal amplifiers and oscillator applications up
|
OCR Scan
|
NE21900
NE21903
NE21908
NE21935
NE219
NE21900)
S12S21|
NE21900,
E21903,
E21908,
2SC2217
2SC2367
NE21935
Ic 9148
|
PDF
|
mosfet transistor 32 l 428
Abstract: No abstract text available
Text: General Description Features The MIC426/427/428 are dual high speed drivers. A TTL/ CMOS input voltage level is translated into an output voltage level swing equalling the supply. The DMOS output will be within 25mV of ground or positive supply. Bipolar designs are
|
OCR Scan
|
MIC426/427/428
1000pF)
MIC426/427/428
mosfet transistor 32 l 428
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MIC426/427/428 Dual Power MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC426/427/428 are dual high speed drivers. A TTLV CMOS input voltage level is translated into an output voltage level swing equalling the supply. The DMOS output will be
|
OCR Scan
|
MIC426/427/428
MIC426/427/428
1000pF)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BGA 427 Si-M M IC-Am plifier in SIEGET 25-Technologie Preliminary data • Cascadable 50 Q-gain block • Unconditionally stable • Gain IS2 1 P = 18,5 dB at 1.8 GHz appl.1 gain IS2 1 12 = 22 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz (Vb=3V, /D=9.4mA)
|
OCR Scan
|
25-Technologie
Q62702-G0067
OT-343
de/Semiconductor/products/35/
235b05
D15SS30
D15S231
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M IC 426/427/428 MIC426/427/428 Dual 1.5A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC426/427/428 are dual high speed drivers. A TTLV CMOS input voltage level is translated into an output voltage level swing equal to the supply. The DMOS output will be
|
OCR Scan
|
MIC426/427/428
MIC426/427/428
1000pF
|
PDF
|
converter ic tl494 mosfet
Abstract: tl494 24v tl494 inverter converter IC427 tl494 dc to ac
Text: MIC426/427/428 Dual 1.5A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC426/427/428 are dual high speed drivers. A TTL/ CMOS input voltage level is translated into an output voltage level swing equal to the supply. The DMOS output will be
|
OCR Scan
|
MIC426/427/428
MIC426/427/428
1000pF
CMOS/bip/428
converter ic tl494 mosfet
tl494 24v
tl494 inverter converter
IC427
tl494 dc to ac
|
PDF
|