60N02
Abstract: 60N02R n02r 369A-13 NTD60N02R NTD60N02R1 NTD60N02RT4
Text: NTD60N02R Power MOSFET 60 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD60N02R
NTD60N02R/D
60N02
60N02R
n02r
369A-13
NTD60N02R
NTD60N02R1
NTD60N02RT4
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Untitled
Abstract: No abstract text available
Text: NTD60N02R Power MOSFET 60 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD60N02R
r14525
NTD60N02R/D
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T60 N02R
Abstract: T60N02R 60N02R 60N02 n02r
Text: NTD60N02R Power MOSFET 60 Amps, 24 Volts N−Channel DPAK Features Drain−to−Source Voltage Symbol Value 8.4 mW @ 10 V 60 A 1 VGS ±20 Vdc Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current Continuous @ TC = 25°C, Chip
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NTD60N02R
NTD60N02R/D
T60 N02R
T60N02R
60N02R
60N02
n02r
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T60 N02R
Abstract: T60N02R MOSFEt t60 n02r T 60 N02R 60N02R 60N02 369D N02R NTD60N02R NTD60N02RT4
Text: NTD60N02R Power MOSFET 60 Amps, 24 Volts N−Channel DPAK Features Drain−to−Source Voltage Symbol Value 8.0 mW @ 4.5 V 60 A 1 VGS ±20 Vdc Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current Continuous @ TC = 25°C, Chip
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NTD60N02R
NTD60N02R/D
T60 N02R
T60N02R
MOSFEt t60 n02r
T 60 N02R
60N02R
60N02
369D
N02R
NTD60N02R
NTD60N02RT4
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t60n02r
Abstract: T60 N02R 60N02R T 60 N02R 60N02
Text: NTD60N02R Power MOSFET 60 Amps, 24 Volts N−Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD60N02R
NTD60N02R/D
t60n02r
T60 N02R
60N02R
T 60 N02R
60N02
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T60N02R
Abstract: No abstract text available
Text: NTD60N02R Power MOSFET 60 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD60N02R
NTD60N02R/D
T60N02R
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T60 N02R
Abstract: T60N02R MOSFEt t60 n02r 60n02r T 60 N02R n02r NTD60N02RG 60N02 NTD60N02RT4G NTD60N02R
Text: NTD60N02R Power MOSFET 62 A, 24 V, N−Channel, DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD60N02R
NTD60N02RG
NTD60N02RT4
NTD60N02RT4G
NTD60N02R-1
NTD60N02R-1G
BRD8011/D.
T60 N02R
T60N02R
MOSFEt t60 n02r
60n02r
T 60 N02R
n02r
60N02
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n02r
Abstract: T60 N02R dpak DIODE 948 T60N02R 60N02R 60N02 ntd60n02rg 100 amp mosfet NTD60N02R T 948
Text: NTD60N02R Power MOSFET 62 Amps, 24 Volts N−Channel DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD60N02R
NTD60N02R/D
n02r
T60 N02R
dpak DIODE 948
T60N02R
60N02R
60N02
ntd60n02rg
100 amp mosfet
NTD60N02R
T 948
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T60N02R
Abstract: T60 N02rg T60N02RG t60n02 N02rg T60-N02RG t60.n02r n02r n02rg t60 NTD60N02R
Text: NTD60N02R Power MOSFET 62 A, 25 V, N−Channel, DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD60N02R
NTD60N02R/D
T60N02R
T60 N02rg
T60N02RG
t60n02
N02rg
T60-N02RG
t60.n02r
n02r
n02rg t60
NTD60N02R
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60N02
Abstract: t60 n02r T60N02R T 60 N02R 369D N02R NTD60N02R NTD60N02RG NTD60N02RT4 NTD60N02RT4G
Text: NTD60N02R Power MOSFET 62 A, 25 V, N−Channel, DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD60N02R
NTD60N02R/D
60N02
t60 n02r
T60N02R
T 60 N02R
369D
N02R
NTD60N02R
NTD60N02RG
NTD60N02RT4
NTD60N02RT4G
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NTD60N02R
Abstract: NTD60N02RG T60 N02R NTD60N02RT4G 369D N02R NTD60N02RT4 T 60 N02R
Text: NTD60N02R Power MOSFET 62 A, 24 V, N−Channel, DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD60N02R
NTD60N02R/D
NTD60N02R
NTD60N02RG
T60 N02R
NTD60N02RT4G
369D
N02R
NTD60N02RT4
T 60 N02R
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T60 N02RG
Abstract: T60N02R T60N02 T-60
Text: NTD60N02R Power MOSFET 62 A, 25 V, N−Channel, DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD60N02R
NTD60N02R/D
T60 N02RG
T60N02R
T60N02
T-60
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60N02
Abstract: t60 n02r NTD60N02RG N02R T60N02R 369D NTD60N02R NTD60N02RT4 NTD60N02RT4G T 60 N02R
Text: NTD60N02R Power MOSFET 62 A, 24 V, N−Channel, DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD60N02R
NTD60N02R/D
60N02
t60 n02r
NTD60N02RG
N02R
T60N02R
369D
NTD60N02R
NTD60N02RT4
NTD60N02RT4G
T 60 N02R
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n02rg
Abstract: diode t95 T95N02R T 60 n02rg ON n02rg T95N02RG NTD95N02R 369D NTD95N02RG NTD95N02RT4
Text: NTD95N02R Power MOSFET 95 Amps, 24 Volts N−Channel DPAK Features http://onsemi.com High Power and Current Handling Capability Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Gate Charge to Minimize Switching Losses Pb−Free Packages are Available
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NTD95N02R
NTD95N02R/D
n02rg
diode t95
T95N02R
T 60 n02rg
ON n02rg
T95N02RG
NTD95N02R
369D
NTD95N02RG
NTD95N02RT4
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n02rg
Abstract: ON n02rg n02r diode t95 NTD95N02RT4G 369D NTD95N02R NTD95N02RG NTD95N02RT4 T 60 n02rg
Text: NTD95N02R Power MOSFET 95 Amps, 24 Volts N−Channel DPAK Features http://onsemi.com High Power and Current Handling Capability Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Gate Charge to Minimize Switching Losses Pb−Free Packages are Available
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NTD95N02R
NTD95N02R/D
n02rg
ON n02rg
n02r
diode t95
NTD95N02RT4G
369D
NTD95N02R
NTD95N02RG
NTD95N02RT4
T 60 n02rg
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diode t95
Abstract: T95 Diode N02R 369D NTD95N02R NTD95N02RT4
Text: NTD95N02R Power MOSFET 95 A, 24 V, N−Channel DPAK Features • • • • High Power and Current Handling Capability Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Gate Charge to Minimize Switching Losses http://onsemi.com V(BR)DSS
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NTD95N02R
NTD95N02R/D
diode t95
T95 Diode
N02R
369D
NTD95N02R
NTD95N02RT4
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diode t95
Abstract: N02R T95 Diode T95N02R
Text: NTD95N02R Power MOSFET 95 A, 24 V, N−Channel DPAK Features • • • • High Power and Current Handling Capability Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Gate Charge to Minimize Switching Losses http://onsemi.com V(BR)DSS
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NTD95N02R
diode t95
N02R
T95 Diode
T95N02R
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n02r
Abstract: 369A-13 NTD110N02R NTD110N02R1 NTD110N02RT4 110N02R 110N02
Text: NTD110N02R Power MOSFET 110 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD110N02R
r14525
NTD110N02R/D
n02r
369A-13
NTD110N02R
NTD110N02R1
NTD110N02RT4
110N02R
110N02
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369A
Abstract: NTD85N02R
Text: NTD85N02R Power MOSFET 85 Amps, 24 Volts N−Channel DPAK Features http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge 85 AMPERES, 24 VOLTS RDS(on) = 4.8 mW (Typ)
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NTD85N02R
NTD85N02R/D
369A
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85N02R
Abstract: DSA005309 NTD85N02R
Text: NTD85N02R Power MOSFET 85 Amps, 24 Volts N−Channel DPAK Features • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge 85 AMPERES, 24 VOLTS
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NTD85N02R
NTD85N02R/D
85N02R
DSA005309
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NTD85N02R
Abstract: No abstract text available
Text: NTD85N02R Power MOSFET 85 Amps, 24 Volts N−Channel DPAK Features http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge 85 AMPERES, 24 VOLTS RDS(on) = 4.8 mW (Typ)
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NTD85N02R
369AA
NTD85N02R/D
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85N02
Abstract: 85n02r NTD85N02R
Text: NTD85N02R Power MOSFET 85 Amps, 24 Volts N−Channel DPAK Features http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge 85 AMPERES, 24 VOLTS RDS(on) = 4.8 mW (Typ)
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NTD85N02R
NTD85N02R/D
85N02
85n02r
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