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    T BC109 Price and Stock

    Central Semiconductor Corp BC109C TIN/LEAD

    Bipolar Transistors - BJT NPN 30Vcbo 25Vceo 5.0Vebo 200mA 600mW
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    Mouser Electronics BC109C TIN/LEAD 534
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    • 1000 $1.08
    • 10000 $0.899
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    T BC109 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    741G08

    Abstract: HL6 smd npn transistor bc148 datasheet 2N3904 H36 BC137 BC148 BC118 BC148 pin configuration SMD RA3 PNP R234A
    Text: A INTEL PENTIUM® III & INTEL® CELERON R PROCESSOR/ 810E2 CHIPSET UNIVERSAL SOCKET 370 PLATFORM UNIPROCESSOR CUSTOMER REFERENCE SCHEMATICS REVISION 1.0 Title A Page Cover Sheet 1 Block Diagram 370-pin socke t 2 3,4 A G T L T e rmination Clock Synthesi zer


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    810E2 370-pin 82810e BC163 741G08 HL6 smd npn transistor bc148 datasheet 2N3904 H36 BC137 BC148 BC118 BC148 pin configuration SMD RA3 PNP R234A PDF

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


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    20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09 PDF

    BC107

    Abstract: bc109 bc108 bc109 gain T BC109 c109s BC179 BC107-BC108-BC109 BC108-BC BC-108
    Text: 3DE D • 7 ^ 2 3 ? Q03QÔSS S T r z 7 ^ 7# S G S -T H O M S O N - z ° i - n B C 107 B C 1 0 8 -B C 109 S G S -T H 0 MS 0 N LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS D E S C R IP T IO N The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal case.They


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    BC107, BC108 BC109 BC177, BC178 BC179. BC107 bc109 gain T BC109 c109s BC179 BC107-BC108-BC109 BC108-BC BC-108 PDF

    KLC-6

    Abstract: BC107 BC109 cemi tranzystor BC108 BC177 BC178 BC179 T018
    Text: 1 - 74/2 T R A N Z Y S T O R Y n-p-n BC107, BC108 i BC109 SWW 1156-211 T ra n z y sto ry k rz em o w e e p ip la n a rn e m ale j m ocy m alej czçstotliw oéci. T ra n z y sto ry BC107 i BC108 p rz ez n ac zo n e do sto so w an ia w u k la d a c h sto p n i w ejâcio w y ch i s te ru j^ c y c h m a le j


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    BC107, BC108 BC109 BC107 BC109 BC177, KLC-6 cemi tranzystor BC177 BC178 BC179 T018 PDF

    Untitled

    Abstract: No abstract text available
    Text: •er | « BC109 SEMICONDUCTOR FORWARD EflEBNAUONAL ELECTRONICS LID. NPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS a t T a i r i F ^ r Symbol R ating C h m c te ristk 30 Collector-Base Voltage Vcbo Collector-Emitter Voltage


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    BC109 100uA 100mA 200uA PDF

    BC140 equivalent

    Abstract: 2n3019 equivalent BC107 equivalent transistors bcy59 equivalent equivalent to BC177 BC141 equivalent 2n930 equivalent BC107 pnp equivalent bc109 equivalent BC160 equivalent
    Text: Discrete Devices Transistors Cont. European “Pro Electron” Types Type Near Equivalent Polarity Pkg. Type Near Equivalent Polarity Pkg. BC107 BC107A BC107B BC108 BC108A 2 N 2484 2N930 2N930 2 N 2484 2N930 NPN NPN NPN NPN NPN T O -18 T O -18 T O -18 T O -18


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    BC107 2N2484 BC107A 2N930 BC107B BC108 BC108A BC140 equivalent 2n3019 equivalent BC107 equivalent transistors bcy59 equivalent equivalent to BC177 BC141 equivalent 2n930 equivalent BC107 pnp equivalent bc109 equivalent BC160 equivalent PDF

    2N290

    Abstract: bc143 2N3570 2N3571 2N3572 2N4252 2N4253 2N918 BFT79 T018
    Text: Metal Can Device Type 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0-48 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T 072 T 072 T 072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200


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    4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 High59 BS9365 2N290 bc143 BFT79 T018 PDF

    BC177, BC178, BC179

    Abstract: 45X10 177b bc178b bc179
    Text: 3QE » • 712*1237 UUJUorn o — -j / T T SGS TH O M S O N ^ 7 # [ * [ ^ m i O T r e s S 6 BC177 BC 178-B C 179 S -T H O M S O N LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC177, BC178 and BC179 are silicon planar epitaxial PNP transistors In TO-18 metal case.They


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    BC177 178-B BC177, BC178 BC179 BC107, BC108 BC109. 7x10-4 5x10-4 BC177, BC178, BC179 45X10 177b bc178b PDF

    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


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    2N3303

    Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
    Text: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any


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    Chiana56 2N3303 T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175 PDF

    bcy78

    Abstract: BFS98 2N3906 BC559 BC182P BC546P BCY65EP BFS61 MPS2222A MPSA06
    Text: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:


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    ZTX453 ZTX452 30-15k ZTX530 BC559P ZTX214 ZTX383 BC184P ZTX384 bcy78 BFS98 2N3906 BC559 BC182P BC546P BCY65EP BFS61 MPS2222A MPSA06 PDF

    BC559

    Abstract: MPS6566 transistor BC182P BC546P BCY65EP BFS61 MPS2222A MPSA05 MPSA06 ZTX304
    Text: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:


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    ZTX453 ZTX452 30-15k ZTX530 BC559P ZTX214 ZTX383 BC184P ZTX384 BC559 MPS6566 transistor BC182P BC546P BCY65EP BFS61 MPS2222A MPSA05 MPSA06 ZTX304 PDF

    audio pre-amplifier bc109

    Abstract: BFS98 for 2n3904 ZTX109 BC182P BC546P BCY65EP BFS61 ZTX114 MPSA05
    Text: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:


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    ZTX453 ZTX452 30-15k /2N3904 \ZTX3904 2N3905 ZTX3905 /2N3903 \ZTX3903 audio pre-amplifier bc109 BFS98 for 2n3904 ZTX109 BC182P BC546P BCY65EP BFS61 ZTX114 MPSA05 PDF

    bcy78

    Abstract: BFS98 2N3804 MPS3645 BC182P BC546P BCY65EP BFS61 MPS2222A MPSA05
    Text: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:


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    ZTX453 ZTX452 30-15k /2N3904 \ZTX3904 2N3905 ZTX3905 /2N3903 \ZTX3903 bcy78 BFS98 2N3804 MPS3645 BC182P BC546P BCY65EP BFS61 MPS2222A MPSA05 PDF

    TRANSISTOR BC 137

    Abstract: TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107
    Text: 2SC D • 023SbGS 00Q40ÔC1 T ■ S I E G ^ r NPN Silicon Transistors _ T -a f-V f SIEMENS AKTIEN G ESELLSCHA F IC 107 J C 108 BC 10g B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case 18 A 3 DIN 41876 . The collector is electrically connected to the case.


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    023SbGS BC107, BC1071Â Q62702-C680 Q60203-X107-A Q60203-X107-B Q60203-X108 BC108 Q60203-X108-A Q60203-X108-B TRANSISTOR BC 137 TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107 PDF

    low noise transistors

    Abstract: BC550P ZTX109 2N3804 2N5086 2N5087 2N5209 2N5210 Scans-00106609 BCY65EP
    Text: NPN LOW NOISE T A B LE 5 - NPN SILICO N PLANAR LOW N O ISE T R A N S IS T O R S The transistors in this table are characterised for low noise, low level amplification and are ideally suited for audio pre-amplifiers as well as universal applications. The devices are listed in order of decreasing collector/emitter breakdown voltage V CE0 ,


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    BCY65EP MPS2484 30-15k BCY77P 2N5209 2N5210 ZTX331 BC550P /2N3904 low noise transistors ZTX109 2N3804 2N5086 2N5087 Scans-00106609 PDF

    ZT84

    Abstract: ZT87 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88
    Text: NPN LOW LEVEL T A B L E 1 - N PN S IL IC O N P L A N A R LOW LEVEL T R A N S IS T O R S The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


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    BCY59 BCY71 10-10K BCY70 N2605 N2604 ZT181 ZT182 BCY78 BCY58 ZT84 ZT87 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 PDF

    ZT92

    Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
    Text: NPN LOW LEVEL T A B L E 1 - N PN S IL IC O N P L A N A R LOW LEVEL T R A N S IS T O R S The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


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    BCY59 BCY79 2N929 2N930 2N2219A 2N2905A 2N2222A 2N2907A ZT181 BCY58 ZT92 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 PDF

    bc238

    Abstract: ZTX304 ZTX108 BC107P BC182P BC212P BC546P BC547P BC556P BC557P
    Text: TABLE 1: NPN GENERAL PURPOSE The d e vice s s h o w n in this table are general p urpose tra n sisto rs d esigned for sm all signal am plification from d.c. to radio frequencies. Typical application areas include: A U D IO F R E Q U E N C Y A M P L IF IE R S , D R IV E R S and O U T P U T S T A G E S , O S C IL L A T O R S , A N D G E N E R A L


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    BC546P BC556P ZTX304 ZTX504 BC182P BC212P ZTX107 ZTX212 BC547P BC557P bc238 ZTX108 BC107P BC212P BC556P BC557P PDF

    BC177, BC178, BC179

    Abstract: BC179 BC178 BC118 BC177 BC111 BC7f tranzystor BC107 BC108
    Text: 4 - 74/2 T R A N Z Y S T O R Y p-n-p * BC177, BC178 i BC179 SWW 1156-211 T ra n z y sto ry k rz em o w e e p ip la n a rn e m ale j m ocy m alej czçstotliw osci. T ra n z y sto ry BC177 i BC178 p rzeznaczone do stosow an ia w p rz ed w z m ac n iac za ch m ale j czçsto tliw o sci i sto p n iac h ste ru j^ cy c h .


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    BC177, BC178 BC179 BC177 BC179 BC107, BC177, BC178, BC179 BC118 BC111 BC7f tranzystor BC107 BC108 PDF

    BC109

    Abstract: BC107 BC103 BC108-BC109 BC108 BC 55 r7 BC108-BC bc109 gain BC-108-2 BC177
    Text: T> 3QE m 7^ETS3? QQ3DÔSS S • ~ ^ F Vr,- - _ f= 7 S M ' S G G I S - T ^ © H O M S O - Z ° i N l L i © T f[R M a û S B C - [ 1 B C 1 0 7 1 0 8 - B C 1 0 9 “ S-TH0MS0N LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS


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    BC107 BC108-BC109 BC107, BC108 BC109 BC177, BC178 BC179. BC107 BC103 BC108-BC109 BC 55 r7 BC108-BC bc109 gain BC-108-2 BC177 PDF

    sC3228

    Abstract: BC286 bc 7-25 pnp MPS9681T BC527-25 BC5508 BC537 BC5568 2N5222 8C416
    Text: CRIMSON SEMICONDUCTOR INC TT 25 14 09 6 C R I M S O N S E M I C O N D U C T O R 99D 00293 DEVICF 2N1507 2N1566 2N I613 2 N I7 U 2N1889 2N1890 TYPE NPN NPN NPN NPN NPN PACKAGE DE | S S I M Q T L INC D T Ô / - COB HFE @ VC & iC By.CEO BVCBO BVEBO ICBO @ VCB


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    15514CHb 2N1507 2N1566 2NI613 2N1889 2N1890 2N1893 2N1973 2N1974 O-237 sC3228 BC286 bc 7-25 pnp MPS9681T BC527-25 BC5508 BC537 BC5568 2N5222 8C416 PDF

    2N4007

    Abstract: BC140 equivalent 2N4007 equivalent TRANSISTOR pnp BC140 TRANSISTOR BC140 BC141 equivalent 2N3060 BC179C TRANSISTOR BC109b bc108b equivalent
    Text: SPRAGUE Metal-Encased Silicon S E P T R Transistors HIGH-VOLTAGE VIDEO OUTPUT TRANSISTOR >- Type No. os < Pd T* = 25 C s V BR Ic B O CEO V o lts EBO V o lts iiA lc Watts CBO V olts Max. (m A) 1.0 300 250 7 ' Lim ts Con dition s V <BR) NPN 2N3440 D-C C U R R E N T G A I N ( h FE)


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    2N3440 O-450 BC108A BC108B BC108C BC109B BC109C BC110 BC177A BC177B 2N4007 BC140 equivalent 2N4007 equivalent TRANSISTOR pnp BC140 TRANSISTOR BC140 BC141 equivalent 2N3060 BC179C TRANSISTOR BC109b bc108b equivalent PDF

    2N1893

    Abstract: 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 ZT92
    Text: NPN LOW LEVEL T A B L E 1 - N P N S IL IC O N P L A N A R L O W L E V E L T R A N S IS T O R S The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


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    2N3866 2N4427 2N2102 2N4036 2N1893 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 ZT92 PDF