bcm 4330
Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?
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Brown Boveri induction Motor
Abstract: sj 2025 ic sj 2025 ASEA fast thyristor berulub F GD Rectifiers BROWN BOVERI servo motor bn16 brown Boveri diode Diode BN16
Text: IGBT Module Half-Bridge Configuration VII200-12G4 IC DC VCES VCE(sat) 3 High Short Circuit SOA Capability Symbol Test Conditions VCES VCGR T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MΩ VGES VGEM Continuous Transient IC25 IC100 ICM T C = 25°C
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VII200-12G4
IC100
Brown Boveri induction Motor
sj 2025
ic sj 2025
ASEA fast thyristor
berulub F
GD Rectifiers
BROWN BOVERI servo motor
bn16
brown Boveri diode
Diode BN16
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MEK350-02DA
Abstract: No abstract text available
Text: □ IXYS MEK350-02DA Preliminary Data Fast Recovery Epitaxial Diode FRED Module ^R S M ^R R M Type 200 V 200 V MEK350-02DA Symbol U ' favm U rm UsM 503 356 1800 A A A TVJ = 45° C 2400 2640 2160 2380 A A A A t t t t TVJ = 45° C = = = = t t t t TVj = 150°C
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MEK350-02DA
50/40-48Nm/lb
D-68623
MEK350-02DA
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Untitled
Abstract: No abstract text available
Text: □ I X Y IXSH15N120AU1 S P R E L IM IN A R Y D A T A S H E E T IGBT with Diode ^C 2 5 "S" Series - Improved SCSOA Capability Symbol T est C onditions V CES T j = 2 5 °C to 150°C V CGR T j = 2 5 °C to 150°C ; f^E= 1 M ß V GES V CES V CE sat M axim um Ratings
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IXSH15N120AU1
125-C,
-100A/
1005C,
125-C
D-68619;
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dsei2x101-02a
Abstract: ixys dsei 1800 IXYS 25C8 0504N
Text: DSEI2x101-02A QIXYS Preliminary Data v RRM Fast Recovery Epitaxial Diode FRED v RSM ^RBM Type 200 V 200 V DSEI 2x101-02A Symbol Test Conditions ^FRM ^FSM TVJ =45°C ; t = 1 0 m s (50 Hz), sine t = 8 .3 m s (60 Hz), sine 600 660 A A T w = 150°C; t = 1 0 m s (50 Hz), sine
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DSEI2X101-02A
2x100
2x101-02A
byTVJM400
OT-227
00D3443
D-68623
ixys dsei
1800 IXYS
25C8
0504N
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Untitled
Abstract: No abstract text available
Text: Mbôb22b DÜ0n4S 5bl « I X Y □IXYS V10500-12S Advanced Technical Information Hybrid IGBT Power Modules S ym b o l v CES C o n d itio n M ax. R ating 1200 V ±30 V T s = 25°C 1 600 A T s = 65°C 500 A 1200 A T s = 25°C 430 A T S = 25°C , 1ms 860 A 2500
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V10500-12S
85Vces,
125-C
400A/US
D-68619
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Untitled
Abstract: No abstract text available
Text: 4bôb52b 0001^43 M'I'î B I X Y VI0400-12S Advanced Technical Information Hybrid IGBT Power Modules S ym bol C o n d itio n vCES vGES T s = 2 5°C VCE = 1200V lC25 = 475A M ax. R ating 1200 V ±30 V ^C25 T s = 25°C 475 A ^C6S T s = 65°C 375 A 'cm T s = 25°C , 1 ms
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VI0400-12S
0/60H
400A/us
D-68619
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IXGH9090
Abstract: IXYS SP
Text: □ IX Y S IXGH9090 HiPerFAST IGBT with Diode ^C 25 V CES V CE sat Lf i 48 A 600 V 2.7 V 400 ns TO-247AD M axim um R atings S ym b o l T e st C onditions VcES T j = 2 5 'C to 150°C 600 V ^C G R T,J = 2 5 'C to 150” C; Rb t = 1 MQ 600 V V GES Continuous
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IXGH9090
D-68619;
IXYS SP
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VAJI
Abstract: TI42A
Text: 4bûb22b Ü001Ö03 T21 IX Y lOIXYS IGBT with Diode IXSN30N100AU1 CES High Short Circuit SOA Capability CE sat = 34 A = 1000 V =4V 2 & 4 "T i Symbol Test Conditions V«s T j = 25°C to 150°C 1000 V T j = 25°C to 150°C; RGE = 1 M£2 1000 V Maximum Ratings
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IXSN30N100AU1
OT-227
30jiH
it140
D-68619
VAJI
TI42A
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Untitled
Abstract: No abstract text available
Text: □IXYS DSE119-06AS Preliminary Data 20 A ^FAVM Fast Recovery Epitaxial Diode FRED vrRRM 600 V t 35 ns TO-263 AA V v RSM V v RRM 600V 600V Symbol A Type Test Conditions 25 20 150 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 100 110 A A TVJ = 150°C
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DSE119-06AS
O-263
DSEI19-06AS
D-68623
Li22t>
0Q0344D
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Untitled
Abstract: No abstract text available
Text: n ix Y S DSE1120-12 A Advanced Technical Data Fast Recovery Exptaxial Diode FRED ^R S M 1200 V Symbol ^R R M Type 1200 V D S E I120-12A Test C on ditio ns FRMS V,RRM t U avm Ji2dt 53 TBD TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 600 660
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DSE1120-12
D-68623
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ixys dsei 2*61-10b
Abstract: ATS1000 ixys dsei 12 IXYS DSEI 2X61-06
Text: 4bfl b22b 0001025 5T2 *IXY □IXYS Fast Recovery Epitaxial Diodes DSEI 2x61 IFAV V t miniBLOC, SOT-227 B v RSM V 640 800 1000 Sym bol V RRM 600 800 1000 2 OSEI 2x61-06B OSEI 2x61-08B DSEI 2x61-10B Ho Maximum Ratings per diode j. t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
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4bflb22b
OT-227
2x61-06
2x61-08B
2x61-10B
150nsient
D-68619
ixys dsei 2*61-10b
ATS1000
ixys dsei 12
IXYS DSEI 2X61-06
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1AX475R
Abstract: MARKING 1ED
Text: Panasonic Tantalim S o M E fe c to ]ytic Capacitors/ÏEH Surface Mount Type Tantalum Solid Electrolytic Capacitors S eries: T yp e : TEH T H igh reliab ility Surface mount type • Features • • • H ig h m o is tu re re s is ta n c e a t + 6 0 °C, 9 0 to 95 % R.H
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EE247
1AX475R
MARKING 1ED
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ixys ixfk 44n50
Abstract: DIODE SMD V05 1J04 5L46 IXFN48N50 IXfk 75 N 50 48N50 SMD-264
Text: nixYS IXFK 44N50/50S IXFK 48N50/50S IXFN 44N50 IXFN 48N50 D ^D S S ^D25 DS on IXFK/FN 44N50 500 V 44 A 0.12 Q. IXFK/FN 48N50 500 V 48 A 0.10 a HiPerFET Power MOSFET N-Channel Enhancement Mode T O -2 6 4 P a c k a g e s Avalanche Rated, High dv/dt, Low t (t < 250) ns
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44N50/50S
48N50/50S
44N50
48N50
48N50
ixys ixfk 44n50
DIODE SMD V05
1J04
5L46
IXFN48N50
IXfk 75 N 50
SMD-264
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2x30-10B
Abstract: 2x31-10b ixys dsei 2x31-10b ixys dsei 2x30-10b
Text: MbflL.22b 0001021 T47 « I X Y □IXY S Fast Recovery Epitaxial Diodes DSEI 2x30 DSEI 2x31 ^FAV V RRM t. = 2x30 A = 600-1000 V < 50 ns miniBLOC, SOT-227 B v RSM V 640 800 1000 v rrm T y p e T y p e V 600 800 1000 DSEI 2x30-06B DSEI 2x30-08B DSEI 2x30-10B DSEI 2x31-06B
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OT-227
2x30-06B
2x31-06B
2x30-08B
2x31-08B
2x30-10B
2x31-10B
D-68619
2x31-10b
ixys dsei 2x31-10b
ixys dsei 2x30-10b
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Untitled
Abstract: No abstract text available
Text: □IXYS MID 550-12 A4 MDI 550-12 A4 [ IGBT Modules lC25 = 670 A V CES = 1 2 0 0 V Short Circuit SOA Capability ^ C E s a t typ. = 2 .3 V Square RBSOA MID MDI Preliminary data Symbol Conditions Maximum Ratings V ces T j = 25°C to 150°C 1200 V VcGR T j = 25°C to 150°C; RGE = 20 k£l
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125aC,
D-68623
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Untitled
Abstract: No abstract text available
Text: IX T H 1 5 N 7 0 M egaM O S FET VDSS ID cont D DS(on) = 700 V = 15 A = 0.45 ß N-Channel Enhancement Mode Symbol Test Conditions Voss T j = 25 °C to 150°C 700 V V qgr T j = 25 °C to 150°C; RGS = 1 MQ 700 V V 6S Continuous ±20 V vGSM Transient ±30
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O-247
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ixys dsei 2x30-04c
Abstract: No abstract text available
Text: DSEI 2X30-04C/06C DSEI 2X31-04C/06C DIXYS Diode 2X30-04C/06C 2X31-04C/06C FRED V RSM V rrm 440V 640V 400V 600V Symbol Type DSEI 2x 30/31 -04C DSEI 2x 30/31 -06C o -l- I f DSEI2x30 Test Conditions T VJ I "^"v j M A A TVJ = 150°C t = 10 mS (50 Hz), sine t = 8.3 ms (60 Hz), sine
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2X30-04C/06C
2X31-04C/06C
DSEI2x30
00D343R
D-68623
ixys dsei 2x30-04c
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MOSFET 11N80
Abstract: 11N80 MOSFET 14n80 ns800 13n80
Text: IXFH 11/13/14/15 N80 IXFM 11/13/14/15 N80 nixYS H iP e r F E T “ P o w e r M O S F E T IXFU/IXFM IXFH/IXFM IXFH/IXFM IXFH/IXFM N-Channel Enhancement Mode High dv/dt, Low t^, HDMOS Family 11N80 13N80 14N80 15N80 Symbol Test Conditions VDSS VDGR Tj = 25°C to 150°C
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11N80
13N80
14N80
15N80
MOSFET 11N80
MOSFET 14n80
ns800
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Untitled
Abstract: No abstract text available
Text: □ I X Y Advanced Technical Information S High Voltage BIMOSFET Monolithic Bipolar MOS Transistor VCES IXBH 9N140 IXBH 9N160 ^C 25 V C E sa t N -C hannel, E n ha n ce m e n t M ode tfi 1400/1600 V 9A 5.8 V typ. 40 ns T O -2 4 7 A D S ym bo l C o n d itio n s
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9N140
9N160
D-68623
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IXSN50N60U1
Abstract: 25CC E72873 50N60 50N60U1
Text: 4 b û b 2 2 b □ □ □ 1 7 ‘ìl 3flT • IX Y □IXYS IGBT with Diode IXSN50N60U1 >c V .„ High Short Circuit SOA Capability =53A = 600 V VcE<sa„ = 2-5 V 2 4 S ym bol T e st C o n d itio n s 'T l M axim um R a tin g s VcES T j = 25°C to 150°C 600
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IXSN50N60U1
D-68619
25CC
E72873
50N60
50N60U1
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Untitled
Abstract: No abstract text available
Text: □ IXYS IXSH10N120AU1 PR E LIM IN A R Y D A T A S H E E T ^C25 IGBT with Diode V CES V CE sat "S" Series - Improved SCSOA Capability Sym bol T est C o n d itio n s V CES Tj = 2 5 °C to 150°C V CGR Tj = 2 5 °C to 150°C; f^E= 1 M£i 1200 V 4.0 V M axim um R atings
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IXSH10N120AU1
125-C,
-247A
125-C
1005C,
D-68623
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Untitled
Abstract: No abstract text available
Text: MII 300-12 A4 IGBT Modules ^C 25 Short Circuit SOA Capability VCES V C E sa t typ. MID 300-12 A4 330 A 1200 V 2.2 V Square RBSOA MID MDI P relim inary data E 72873 S ym bo l C o n d itio n s M axim um R atings V qeS T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C ; RGE = 20 k il
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E72873
D-68623
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IXTN36N50
Abstract: No abstract text available
Text: • 4 b û b 2 2 b O G O l ûl l TTfl ■ IX Y DIXYS Pow er M O S FE T IX T N 3 6 N 4 5 IX T N 3 6 N 5 0 N-Channel Enhancement Mode D cont v¥ p dss DS(on) = 36 A = 450/500 V = 0 .1 2 & R = 0.5 Q Symbol Test Conditions Voss Tj = 25°C to 150°C Maximum Ratings
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IXTN36N45
IXTN36N50
D-68619;
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