Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD L5107 Preliminary LINEAR INTEGRATED CIRCUIT CON ST AN T CU T T EN T BOOST CON T ROLLER FOR DRI V I N G H I GH POWER LEDS DESCRI PT I ON The UTC L5107 is a high powered PWM boost converter optimized for constant current applications such as driving one or
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L5107
L5107
QW-R125-026
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el2099
Abstract: EL2099CT metal film resistors n4 150C bf200 pin configuration FN7041 REPLACEMENT EL2099 EL2003 BF200
Text: DUCT T E PRO LACEMEN at T E L P O E S e t R OB D en r ENDE Support C om/tsc M M O il.c cal REC NO Data echni ww.inters our TSheet w t r c o a t L con INTERSI 1-888 EL2099 January 1996, Rev. D FN7041 Video Distribution Amplifier Features The EL2099 is a high speed,
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EL2099
FN7041
EL2099
50MHz
EL2099CT
metal film resistors n4 150C
bf200 pin configuration
FN7041
REPLACEMENT EL2099
EL2003
BF200
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD UM607 LINEAR INTEGRATED CIRCUIT CC, CV CON T ROL FOR BAT T ERY CH ARGER AN D ADAPT OR 5 ̈ 4 6 DESCRI PT I ON The UTC UM607 is a voltage and current control IC which has precision voltage reference. These devices have been optimized for
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UM607
UM607
OT-26
QW-R105-037
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beta transistor 2N2222
Abstract: NPN transistor 2n2222 beta value beta dc of transistor 2N2222 2N2222 transistor 2N2907 NPN Transistor 2N2222 2N2222 to-3 package Datasheet 2N2222 transistor 2N2222 pnp 2n2222 similar
Text: EL2021 CT ENT ODU E PR PLACEM er at T E L t E O OBS ENDED R port Cen m/tsc up sil.co M S M l O a ic er EC echn www.int NO R Data November 1993, Rev. F r our T Sheet o t c L I a t con -INTERS 1-888 FN7027 Monolithic Pin Driver Features The EL2021 is designed to drive
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EL2021
FN7027
EL2021
beta transistor 2N2222
NPN transistor 2n2222 beta value
beta dc of transistor 2N2222
2N2222 transistor
2N2907 NPN Transistor
2N2222
2N2222 to-3 package
Datasheet 2N2222 transistor
2N2222 pnp
2n2222 similar
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5.1 circuit diagram schematics
Abstract: schema
Text: Evaluation For Pin s Board and C o n n e c t io n s Re fe r to Data Circuit Sh e e t of the DUT <5 < 1 Schematic Diagram Notes: 1. SM A Fem ale connectors. 2. PCB Material: Rogers R04350 or equivalent, Dielectric Con stan t=3.5, T h ickn e ss= .0 3 0 inch.
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TB-51
R04350
TB-51-20
5.1 circuit diagram schematics
schema
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mxl 5007
Abstract: 233a diode pj 986 diode 13005 2 ANI 1015 E 13007 pj 986 iv A5 gnb 100 A1 gnb 003
Text: I QUALIFICATION T IREQUIREMENTS REMOVEDl 20 OCTOBER 19^7 SITPIKSEDI Hfi-MI L-M-3 85 1 0 / 23 3 USAF 30 September 1980 MILITARY SPECI FI CATI ON MI CROCIRCUITS, D I G I T A L , T T L , 4096 8 I T STATIC RANDOM ACCESS MEMORY (SRAM) MONOLITHIC SILI CON
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MIL-M-38510/233
MIL-M-38510
MIL-M-38510.
ll47o
mxl 5007
233a diode
pj 986 diode
13005 2
ANI 1015
E 13007
pj 986 iv
A5 gnb 100
A1 gnb 003
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74LS115
Abstract: 74LS273 74LS189 equivalent 74LS00 QUAD 2-INPUT NAND GATE 74LS265 fan-in and fan out of 7486 74LS93A 74LS181 74LS247 replacement MR 31 relay
Text: F A IR C H IL D LOW POWER S C H O T T K Y D A TA BOOK ERRATA SHEET 1977 Device Page Item Schematic 2-5 Figure 2-6. Blocking diode in upper right is reversed. Also, diode con necting first darlington emitter to output should have series resistor. LS33 5-25
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Untitled
Abstract: No abstract text available
Text: Æ lltran N-CHANNEL ENHANCEMENT MÜS FET 60V, 30 A, 0.04 0 SDF044 SDF044 VDSS 60 V dc VOGR 60 V dc ±20 Vdc Ade Gate-Source Voltage Con t i n u ou s D rain C urrent Continuous T c = 25°c SCHEMATIC TERMINAL Total Power Pulsed(3) D issipation 1 ID 30 1DM
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SDF044
SDF044
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SDF034
Abstract: No abstract text available
Text: Æ u t r o n , , „ p ir o q u o t â t a lq o N-CHANNEL ENHANCEMENT MOS FET 60V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Vo 11 . 1 VDSS Dra in-Gate Vo 1tage VDGR (Rgs = 1.OMn) (1) Gate-Source Voltage VGS Con t inuous Drain Current Continuous
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SDF034
SDF034
MIL-S-19500
300nS,
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TB082
Abstract: Scans-00569
Text: Evaluation Bo a rd N and Circuit OUT TB-08 COUPLED 75 Ohm Schematic Diagram Notes: 1. 75 Ohm BNC Fem ale connectors. 2. PCB Material: Rogers R04350 or equivalent, Dielectric Con stan t=3.5, T h ickn e ss= .0 3 0 inch. DWG N O :TB— 08—20 THIS DOCUMENT AND ITS CONTENTS ARE THE PROPERTY OF MINI-CIRCUITS.
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R04350
TB082
Scans-00569
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TB-285
Abstract: No abstract text available
Text: Evaluation Board and Circuit RF IN RF OUT TB—285 RF OUT 50 Ohm RF IN 50 Ohm V V d a \s~ V 3 \/2 \/1 kxsl NV1 RvT~ Schematic Diagram Notes: 1. SM A Fem ale connectors. 2. PCB Material: Rogers R04350 or equivalent, Dielectric Con stan t=3.5, T h ickn e ss= .0 2 0 inch.
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R04350
TB-285
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Untitled
Abstract: No abstract text available
Text: ^ l i t r o n PRODUCT DEVICES.INC. 3301 ELECTRONICS WAY. WEST PALM BEACH, FLORIDA 33407 t e l. 407 848-43H fa x . (407) 863-5946 ki _ p r j A M M C I (Rg s M . O M o ) (1) Gate-Source Voltage Con t inuous Drain Current Continuous (Tc = 25* C) Drain Current Pulsed(3)
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848-43H
03bflbOS
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NE528B
Abstract: No abstract text available
Text: signotics 528 FOUR CHANNEL PLATED WIRE MEMORY SENSE AMPLIFIER LINEAR INTEGRATED CIRCUITS PIN CON FIGURATION DESCRIPTION The NE528B is a m onolithic fo u r channel plated wire sense amplifier designed to read small signals, 3mV or above, and translate them to T T L logic levels. The NE528B features
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NE528B
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250M
Abstract: 93A50
Text: Æ titron PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET 1000V, 10A, SDF10N100 SDF10N100 SDF10N100 SDF10N100 ABSOLUTE MAXIMUM RATINGS PARAMETER s -I.O M o UNITS SYMBOL Drain-source Volt. l) Drain-Gate Voltage (Rg (1) Gate-Source Voltage Con t inuous
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MIL-S-19500
300hS,
250M
93A50
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Untitled
Abstract: No abstract text available
Text: /T T SGS-THOMSON *7M, HD i[L[l gìrMD(g@ TS3V902 3V INPUT/OUTPUT RAIL TO RAIL DUAL CMOS OPERATIONAL AMPLIFIER (WITH STANDBY POSITION • DEDICATED TO 3.3V OR BATTERY SUPPLY (specified at 3V and 5V) ■ RAIL TO RAIL INPUT AND OUTPUT VOLTAGE RANGES ■ STANDBY POSITION : REDUCED CON
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TS3V902
600i2
100i2
DIP14
TS3V902I/AI/BI
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Untitled
Abstract: No abstract text available
Text: ITT POMONA 1 5 0 0 E A ST NINTH S T R E E T 3 - ¿300 F A X. 9 05 6 29 - 3'3 I 7 PO M ON A. C A L IF O R N IA 22.35 t 88)- r~ ~ -i28.70 (l. 13) f 'u _^r SCHEMATIC THIS IS ISSUED IN STRICT CONFIDENCE ON CON DITION THAT IT IS NOT USED AS A BASIS FOR MANU
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1100-H14
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1Z 116
Abstract: MIL-M-38510/104B oasis
Text: MIL-M-38510/104B 29 Mav 1987 SUP'ERSETJTRi- MIL-M-38510/104A 6 O c t o b e r 1975 J MI LI T A R Y SPECI FI CATI ON MI CROCI RCUI TS, LINEAR LI NE DRIVERS AND RECEIVERS MONOLITHIC SI L I CON T his s p e c i f i c a t i o n is ments and Agencies 1.
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MIL-M-38510/104B
MIL-M-38510/104A
MIL-M-38blU.
1Z 116
MIL-M-38510/104B
oasis
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SDF6NA100
Abstract: 2A472
Text: Æwtion PRODUCT DEVICES.INC N-CHANNEL ENHANCEMENT MOS FET 1000V, 5.5A, ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL Drain-Source Volt. l Drain-Gate Vo 1tage (RGS-1.0Mo ) (1) Gate-Source Voltage Con t inuous Drain Current Continuous (Tc = 25’C) Drain Current Pulsed(3)
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SDF6NA100
MIL-S-19500
A47-2
2A472
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Untitled
Abstract: No abstract text available
Text: Æ utran p r o d u c t g a t â l q q N-CHANNEL ENHANCEMENT MOS FET 'rLU.&f ABSOLUTE MAXIMUM RATINGS PARAMETER Drain- so ur ce Vo 1t . 1) Dr a in-Ga te Vo 1tage (R gs =1.0M o ) 6 0 0 V, UNITS SYMBOL (1) Gate-Source Voltage Con t inuous Drain Current Co ntinuous
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SDF17N60
MIL-S-1950-
IF-17A
i/dt-100A/
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Untitled
Abstract: No abstract text available
Text: RoHS THE INFORMATION CONTAINED HEREIN IS CON SIDERED "PROPRIETARY" TO BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED O R D ISCLO SED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. 2002/95/EC E L E C T R IC A L C H A R A C T E R IS T IC S @ 25°C O P E R A T IN G
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2002/95/EC
350uH
10/100BT
SI-60118-F
SI-60118-F
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RETICON
Abstract: RA1662NAG-011 reticon photodiode array RA1662N RA1662NAG011 RA1662 EGG RETICON RETICON diode array RETICON RA
Text: E G & G RETICON 47E D m 3G3Q73Ö 00D3bl0 ü « R E T -o , RA1662N n 11 EGzG RETICON General Description Parallel Output Photodiode Area Array Video 7 C 1 The RA1662N is a self-scanned area photodiode array con
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3G3Q73Ö
00D3bl0
RA1662N
RA1662N
RA1662NAG-011
RETICON
RA1662NAG-011
reticon photodiode array
RA1662NAG011
RA1662
EGG RETICON
RETICON diode array
RETICON RA
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Untitled
Abstract: No abstract text available
Text: F A X . C J 3 ¿2 3- 3 3 / 7 POMONA 15 00 EAST NINTH S T R E E T POMONA. C A LIFO R N IA 22.35 °_ - r SCHEMATIC -> fr f ë - ri THIS IS ISSUED IN STRICT CONFIDENCE ON CON DITION THAT IT IS NOT USED AS A BASIS FOR MANU FACTURE OR SALE. AND THAT IT 13 NOT COPIEO.
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A380or
MIL-C-15328.
1100rH14
MIL-A-8625
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SDF9140
Abstract: zo470
Text: Ævttxon PRODUCT DEVICES.INC. P-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL Drain-source Vo 1t . 1 Drain-Gate Vo 1tage (Rss-l.OMn) (1) Gate-Source Voltage Con t inuous Drain Current Continuous (Tc = 25°C) Drain Current Pulsed(3)
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300nS,
SDF9140
zo470
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Untitled
Abstract: No abstract text available
Text: S-AV6 TOSHIBA TOSHIBA RF POWER AMPLIFIER MODULE S-AV6 Unit in mm VHF M ARINE FM RF POWER AMPLIFIER MODULE TIîo'h T-nin Po^28W , G p=21.4dB, « t ^ 4 5 % M A X IM U M RATINGS (Tc = 25°C SYMBOL CHARACTERISTIC DC Supply Voltage vcc DC Supply Voltage v CON
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5-53P
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