Untitled
Abstract: No abstract text available
Text: m IS61SF12832 128K x 32 SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Fast access times: 7.5 ns, 8 ns, 8.5 ns, 10 ns, and 11 ns Internal self-timed write cycle Individual Byte Write Control and Global Write Clock controlled, registered address, data inputs and control signals
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IS61SF12832
100-Pin
119-pin
PK13197TÃ
QGQGS55
17-1A
T004404
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IS61C1024
Abstract: No abstract text available
Text: IS61C1024 IS61C1024L ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM august 1995 FEATURES DESCRIPTION • H igh-speed access tim e: 12, 15, 20, 25 ns • Low active pow er: 600 m W typical • Low stan dby pow er: 500 |aW (typical) C M O S sta n d b y The I S S I IS61C1024 and IS61C1024L are very high-speed,
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IS61C1024
IS61C1024L
IS61C1024
IS61C1024L
072-word
300-mil
400-mil
IS61C1024L-20JI
IS61C1024L-20NI
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Untitled
Abstract: No abstract text available
Text: ISSP IS28F002BV/BLV 262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation A u to m a te d B y te W rite an d B lo c k E rase — In d u s try -S ta n d a rd C o m m a n d U ser
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IS28F002BV/BLV
16-KB
IS28F002BVB-80TI
40-pin
IS28F002BVT-80TI
IS28F002BLVB-120TI
IS28F002BLVT-120TI
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Untitled
Abstract: No abstract text available
Text: ISSI IS29F010 1 MEGABIT 128K x 8-bit CMOS, 5.0V Only Sectored Flash Memory p r e l im in a r y O c t o b e r 1998 FEATURES • High-performance CMOS - 35, 45, 55, 70, and 90 ns max. access time • Single 5V-only power supply - 5V ± 10% for Read, Program, and Erase
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IS29F010
program32
PK13197T32
T004404
00G05fc
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Untitled
Abstract: No abstract text available
Text: ISSI IS80C51 8-BIT MICROCONTROLLER ADVANCE INFORMATION OCTOBER 1995 FEATURES DESCRIPTION • 4K bytes of in-circuit ROM The IS S IIS80C51 is a low power, high-performance CMOS 8bit microcontroller and is compatible with the industry stan dard 80C51 instruction set and pinout. The IS80C51 is manu
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IS80C51
IIS80C51
80C51
IS80C51
16-bit
IS80C51PL
IS80C51W
600-mil
T004404
000D34fl
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Untitled
Abstract: No abstract text available
Text: ISSI IS24C04-3 1 4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM PRELIMINARY SEPTEMBER 1995 FEATURES • • • • • • • • • Low po w e r C M O S — A ctive cu rre n t less than 2 m A — S tan dby curre nt less than 8 ^ A Low vo lta g e opera tion
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IS24C04-3
096-BIT
EP81995DS04-3
IS24C04-3P
IS24C04-3G
600-mil
IS24C04-3PI
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Untitled
Abstract: No abstract text available
Text: ISSI - 4-i IS61C64AH 8K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 12,15, 20, 25 ns T he IS S I IS61C64AH is a ve ry high-speed, low power, 8 192-w ord by 8-bit static RAM. It is fabricated using FSSI's high-perform ance CM O S technology. T his highly reliable pro
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IS61C64AH
192-w
IS61C64AH-12N
IS61C
300-m
IS61C64AH-15N
IS61C64AH-15J
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Untitled
Abstract: No abstract text available
Text: 64K x 32 LOW VOLTAGE SYNCHRONOUS PIPELINE STATIC RAM ADVANCE INFORMATION MARCH 1997 FEATURES DESCRIPTION • Fast access time: The IS S I IS61LV6432 is a high-speed, low-power synchro nous static RAM designed to provide a burstable, highperformance, secondary cache for the Pentium , 680X0™,
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IS61LV6432
680X0â
ns-83
ns-75
ns-66
T004404
SR018-0A
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Untitled
Abstract: No abstract text available
Text: ISSI 32,768 X 8 HIGH-SPEED CMOS EPROM FEATURES DESCRIPTION • Fast read access time: 45 ns • Pin compatible with the IS 27C 256 • Low power consumption The I S S IIS27HC256 is a ultra-high-speed 256K-bit Ultravio let Erasable CMOS Programmable Read-Only Memory. It
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IIS27HC256
256K-bit
IS27C256,
600-mil
IS27HC256-45WI
IS27HC256-45PLI
IS27HC256-45CWI
IS27HC256-55WI
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Untitled
Abstract: No abstract text available
Text: IS ffl 32K x 32 SYNCHRONOUS FAST STATIC RAM PRELIMINARY JUNE 1997 FEATURES DESCRIPTION • Fast access tim e: The ISSI IS61C632A is a high-speed, low-power synchro nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,
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IS61C632A
680X0â
ns-125
ns-100
ns-83
ns-75
ns-66
S61C632A-5TQ
IS61C632A-5PQ
IS61C632A-6TQ
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Untitled
Abstract: No abstract text available
Text: ISSI 2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM PRELIMINARY SEPTEMBER 1995 FEATURES • Low power CMOS — Active current less than 2 mA — Standby current less than 8 ¡¿A • Hardware write protection — Write control pin • Internally organized as 256 x 8
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048-BIT
IS24C02
EP81995DSÃ
IS24C02
EP81995DS02
IS24C02-P
IS24C02-G
600-mil
IS24C02-PI
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MAX714
Abstract: No abstract text available
Text: IS5F ¡ IB 131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation ADVANCE INFORMATION JULY 1997 Industrial Temperature Operation 40°C to +85°C • High-Performance Read
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x8/x16
32-bit
16-KB
96-KB
128-KB
PK13197T48
MAX714
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Untitled
Abstract: No abstract text available
Text: ISSI IS27C512_ 65,536 x 8 CMOS EPROM FEATURES DESCRIPTION • Fast acce ss tim e: 90 ns • JE D E C -ap prove d pinout • H igh-sp ee d w rite pro gra m m ing The ISSI IS27C512 is an 512K-bit CMOS 64K-word by 8-bit U ltraviolet Erasable CMOS Program m able Read-Only
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IS27C512_
IS27C512
512K-bit
64K-word
600-mil
IS27C512-90WI
IS27C512-90PLI
IS27C512-90CWI
IS27C512-90TI
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T-con
Abstract: No abstract text available
Text: CMOS SINGLE CHIP 8-BIT MICROCONTROLLER PRELIM INARY JUNE 1997 FEATURES G ENERAL DESCRIPTION • 4K x 8 ROM IS80C51 only The ISSI IS80C51/31 is a high-performance micro controller fabricated using high-density CMOS technology. The CMOS IS80C51/31 is functionally
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IS80C51
16-bit
40-pin
44-pin
IS80C51/31
DG4404
T-con
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IS28F010
Abstract: IS28F010-45PL
Text: ISSI I S 2 8 F 0 1 0 131,072 x 8 CMOS FLASH MEMORY p r e l im in a r y NOVEMBER 1995 FEATURES • Flash electrica l bu lk chip-e ra se - O ne seco nd typica l chip-e ra se • C M O S low p o w e r con sum p tion - 30 m A m axim um active curre nt - 1 0 0 |iA m axim um sta n d b y curre nt
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IS28F01Q
32-pin
IS28F010-120PL
IS28F010-120T
IS28F010-45WI
600-mil
IS28F010-45PLI
IS28F010-45TI
IS28F010
IS28F010-45PL
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tdq4-M
Abstract: HP 2231 IS42S16128
Text: 28 i 256K x 16 4-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION JUNE 1997 FEATURES DESCRIPTION • Clock frequency: 100 MHz • Two Bank internal structure: ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance.
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131072-word
16-bit
50-pin
DR005-0A
tdq4-M
HP 2231
IS42S16128
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IS61SF6436
Abstract: No abstract text available
Text: ISSF 64K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM advance INFORMATION MARCH1997 FEATURES DESCRIPTION • Fast access times: 8.5 ns, 9 ns, 10 ns • Internal self-timed write cycle The ISSIIS61SF6436 is a high-speed, low-power synchro nous static RAM designed to provide a burstable, high
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I5TOE6436_
MARCH1997
100-Pin
IS61SF6436
SF6436-8
IS61SF6436-9TQ
IS61SF6436-9PQ
IS61SF6436-1OTQ
IS61SF6436-10PQ
IS61SF6436
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T1IG
Abstract: IS61LV6432 D2259
Text: ISSP 64K x 32 LOW VOLTAGE SYNCHRONOUS PIPELINE STATIC RAM ADVANCE INFORMATION MARCH 1997 FEATURES DESCRIPTION • The IS S IIS61LV6432 is a high-speed, low-power synchro nous static RAM designed to provide a burstable, high performance, secondary cache for the Pentium , 680X0™,
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ns-83
ns-75
ns-66
100-Pin
sr018-0a
T1IG
IS61LV6432
D2259
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IS61C632
Abstract: 5C-32
Text: ISSI IS61C632 32K x 32 SYNCHRONOUS FAST STATIC RAM septeT berims FEATURES DESCRIPTION • Fast access time: - 8.5 ns-66 MHz;10 ns-60 MHz; 12 ns-50 MHz • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and
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Septemberi995
ns-66
ns-60
ns-50
100-Pin
IS61C632
SR81995C32
IS61C632-8TQ
IS61C632-8PQ
5C-32
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Untitled
Abstract: No abstract text available
Text: ISSF 32K x 8 LOW VOLTAGE STATIC RAM FEATURES • Access time: 45, 70, 100 ns • Low active power: 70 mW • Low standby power — 45 n-W CMOS standby • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 3.3V power supply
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JULY1997
IS62LV256
768-word
PK13197J28
1DD44D4
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Untitled
Abstract: No abstract text available
Text: IS$F 8K x 8 LOW POWER CMOS STATIC RAM FEATURES DESCRIPTION • The IS S I IS62C64 is a low power, 8,192-word by 8-bit static RAM. It is fabricated using IS S I's high-performance CMOS technology. C M O S low power operation — 4 0 0 m W m ax. operating
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IS62C64
192-word
28-pin
450-mil
R0G44D4
000040G
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Untitled
Abstract: No abstract text available
Text: ISSI 1 3 1 ,0 7 2 x 8 C M O S E P R O M FEATURES DESCRIPTION • The ISSI IS27C010 is a 1 megabit 128K-word by 8-bit Ultraviolet Erasable CMOS Program m able Read-Only Memory. It requires only a single 5V power supply in normal read mode operation. Any byte can be accessed in less than
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IS27C010
128K-word
IS27C010-90WI
IS27C010-90PLI
IS27C010-90CWI
IS27C010-90TI
600-mil
IS27C010-12WI
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Untitled
Abstract: No abstract text available
Text: 524,288 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY ADVANCE INFORMATION DECEMBER 1996 • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation • Automated Byte Write and Block Erase — Industry-Standard Command User Interface
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16-KB
96-KB
PK13197T1-40
0044D4
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Untitled
Abstract: No abstract text available
Text: ISSI I S 2 8 F 0 1 0 _ 131,072 x 8 CMOS FLASH MEMORY PRELIMINARY NOVEMBER 1995 FEATURES • Flash electrica l bu lk chip-e ra se - O ne seco nd typica l chip-e ra se H igh pe rfo rm an ce - 45 ns m axim um access tim e • C M O S low p o w e r con sum p tion
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32-pin
IS28F010-45WI
IS28F010-45PLI
IS28F010-45TI
600-mll
IS28F010-70WI
IS28F010-70PLI
IS28F010-70TI
600-mil
IS28F010-90WI
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