TRANSISTOR 9642
Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics
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T0247
T0220
IRG4BC20F
IRG4BC20FD
IRG4BC30F
IRG4BC30FD
IRG4BC40F
IRG4BC20U
IRG4BC20UD
IRG4BC30U
TRANSISTOR 9642
9544 transistor
T0247 package
what is fast IGBT transistor
IRG4PC50U
Equivalent transistors for IRG4PC50U
IRG4BC20FD 600V 16 TO220
IRGPC40U
irg4ph50ud
IRGB440U
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LD 33 regulator
Abstract: LM2937-5.0VT0-220 MIC29502 ADJ so-8 2951 MIC29750 T0263
Text: Section 2. Low-Dropout Regulator Design Charts Regulator Selection Charts Output Current Low Accuracy Noise Single or Dual MIC5210 MSOP-8 Dual 150mA LDO w / Noise Bypass 3.0, 3.3, 3.6, 4.0, 5.0V Single MIC5205 SOT23-5 150mA LDOw/ Noise Bypass 2.8, 3.0, 3.3, 3.6, 3.8, 4.0, 5.0V, Adj
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MIC5210
MIC5205
OT23-5
MIC5202
LP2950
MIC2950
150mA
100mA
LD 33 regulator
LM2937-5.0VT0-220
MIC29502 ADJ
so-8 2951
MIC29750
T0263
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Untitled
Abstract: No abstract text available
Text: r Z 7 SGS-THOMSON ^[] æ[l[L[iCT^©[lïl[]©i STPS60xxCP/CPI STPS6045CW POWER SCHOTTKY RECTIFIERS FEATURES AND BENEFITS • ■ ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLESWITCHING LOSSES EXTREME FAST SWITCHING HIGH AVALANCHE CAPABILITY LOW THERMAL RESISTANCE
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STPS60xxCP/CPI
STPS6045CW
2500Vrms
STPS6035CPI
STPS6045CPI
T0247
STPS6035CP
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Untitled
Abstract: No abstract text available
Text: BYW99P/PI/W HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES • ■ ■ ■ ■ ■ SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION T O P 3I: Insulating voltage = 2500 V DC
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BYW99P/PI/W
BYW99PI-200
T0247
BYW99P-200
T0247
BYW99W-200
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M7 DIODE POLARITY
Abstract: DIODE M7 marking M7 DIODE MARKING
Text: SGS-THOMSON IM O M iL iig ra fM O O S B Y W 9 9 P /P I/W HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES PRELIMINARY DATASHEET FEATURES • . . . . ■ SUITED FORSMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY
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BYW99PI-200
T0247
BYW99P-200
T024ns
M7 DIODE POLARITY
DIODE M7 marking
M7 DIODE MARKING
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stps3045cw
Abstract: No abstract text available
Text: SGS-THOMSON STPS30xxCP/CPI STPS3045CW IMSIlaillLiOTIHMDCS POWER SCHOTTKY RECTIFIERS • . ■ ■ . ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP HIGH AVALANCHE CAPABILITY LOW THERMAL RESISTANCE
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STPS30xxCP/CPI
STPS3045CW
STPS3035CPI
STPS3045CPI
T0247
stps3045cw
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PDF
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Untitled
Abstract: No abstract text available
Text: STPS60L30CW LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS I f a v 2x30 A V rrm 30 V Tj (max) 150 °C V f (max) 0.38 V FEATURES AND BENEFITS • ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING
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STPS60L30CW
T0247,
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PWM welding
Abstract: No abstract text available
Text: @ M ITEL ITZ25F12 - _ Powerline N-Channel IGBT SEM ICON D UCTOR . . . , A dvance Inform ation DS5054-1.2 January 1999 The ITZ25F12 is a very robust non punch through nchannel, enhan cem ent m ode insulated gate bipolar transistor IGBT designed for low power dissipation in a
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ITZ25F12
DS5054-1
ITZ25F12
PWM welding
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ITZ35F12P
Abstract: ITZ35F12
Text: ITZ35F12 M ITEL Powerline N-Channel IGBT S E M IC O N D U C T O R A dvance Inform ation Supersedes Novem ber 1998, version DS5069-1.0 The ITZ35F12 is a ve ry robust non punch through nc h a n n e l, e n h a n c e m e n t m ode in s u la te d g a te b ip o la r
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ITZ35F12
DS5069-2
DS5069-1
ITZ35F12
ITZ35F12P
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DS4737-4
Abstract: No abstract text available
Text: /t7k M ITEL ITS08C06 SE M IC O N D U C T O R Medium Frequency Powerline N-Channel IGBT with Ultrafast Diode Supersedes March 1999, version DS4737-3.0 DS4737-4.0 April 1999 The ITS08C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for
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DS4737-3
ITS08C06
DS4737-4
ITS08C06
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1xgh32
Abstract: IXGH32N60B
Text: Preliminary Data Sheet HiPerFAST IGBT IXGH32N60B IXGH32N60BS VCES ^C25 VCE sat t, Symbol Test Conditions V OES Td = 25°C to 150°C 600 V v CGR Td = 25°C to 150°C; RGE = 1 MO 600 V VGES Continuous ±20 V V OEM Transient ±30 V 60 A ^C90 Tc = 25°C Tc = 90°C
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IXGH32N60B
IXGH32N60BS
T0-247
32N60BS)
1xgh32
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PDF
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Untitled
Abstract: No abstract text available
Text: ITH60F06 M ITEL High Speed Powerline N-Channel IGBT SEMICONDUCTOR A dvance Inform ation DS4992-2.2 O ctober 1998 T h e IT H 6 0 F 0 6 is a v e ry r o b u s t n -c h a n n e l, e n h a n c e m e n t m ode in su la te d gate b ip o la r tra n s is to r IGBT designed fo r low pow er dissipation in a w ide range
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ITH60F06
DS4992-2
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40F06P
Abstract: ITH40F06
Text: M ITEL S E M IC O N D U C T O R ITH40F06 High Speed Powerline N-Channel IGBT A dvance Inform ation DS4991-2.2 O ctober 1998 T h e IT H 4 0 F 0 6 is a v e ry r o b u s t n -c h a n n e l, e n h a n c e m e n t m ode in su la te d gate b ip o la r tra n s is to r
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Untitled
Abstract: No abstract text available
Text: IT Z 1 5 F 1 2 M ITEL Powerline N-Channel IGBT S E M IC O N D U C T O R A dvance Inform ation DS5053-1.2 January 1999 The ITZ15F12 is a ve ry robust non punch through nc h a n n e l, e n h a n c e m e n t m ode in s u la te d g a te b ip o la r tran sistor IGBT designed fo r low pow er dissipation in a
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DS5053-1
ITZ15F12
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Untitled
Abstract: No abstract text available
Text: Efiim D ? DIOTEC EL EC T R O N I C S CORP SÛE » DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B n y r Gardena, CA 90248 uà Tel.: 310 767-1052 Fax: (310)767-7958 GDOÜOb3 401 « D I X Data Sheet No.: SESA-3002-A L - T '- a v - v * TQ-247 (TQ-3P)
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SESA-3002-A
TQ-247
O-247
UL94V-0
MIL-STD-202E,
DB25/T
DB25/W
DB25P/T
DB25P/W
O-220
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Untitled
Abstract: No abstract text available
Text: DI OTEC D À L , ELECTRONI CS CORP 5ÛE T> DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 Efi MTl G? GQQG1S3 ^43 « D I X 1N4148 MINIATURE ULTRA-FAST SWITCHING DIODE FEATURES: • • • • •
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1N4148
DO-35
DO-35,
MIL-STD-202,
DB25/T
DB25/W
DB25P/T
DB25P/W
O-220
O-247)
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Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP D1C SflE D • 204^10? 0000025 bTfl IDIX Data Sheet No.: SBDT-1200-A DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 r - o v n Fax: (310)767-7958 12 AMP SCHOTTKY BARRIER RECTIFIERS Fully-Insulated Package
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SBDT-1200-A
O-220AB
387MAX.
O-220
DB25/T
DB25/W
DB25P/T
DB25P/W
O-247)
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PDF
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ic tea 1090
Abstract: smd tea 521 27AD
Text: Preliminary data HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S v CES ^C25 v* CE sat % Combi Pack = = = = 600 V 75 A 2.7 V 275 ns T0-247 Hole-less SMD (50N60AU1S) Symbol Test Conditions v CES T0 = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 MO
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IXGX50N60AU1
IXGX50N60AU1S
T0-247
50N60AU1S)
O-247
s1997
ic tea 1090
smd tea 521
27AD
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PDF
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Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP iw u á r L SflE D S flM 'ìlO ? GQ0G17S DOM « D I X DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 Data Sheet No.: FSDG-800-A 8 AMP FAST RECOVERY RECTIFIERS FEATURES: •
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GQ0G17S
FSDG-800-A
T0-220
UL94V-0
MIL-STD-202E,
DB25/T
DB25/W
DB25P/T
DB25P/W
O-220
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.24n50
Abstract: xgh2 IXGH24N50BU1 IXGH24N60BU1
Text: Preliminary data HiPerFAST IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 V CES *C 25 VCE(sat) t. 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack T0-247 SMD (24N*BU1 S) Symbol TestConditions I C (TAB) Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C
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IXGH24N50BU1
IXGH24N60BU1
T0-247
24N50
24N60
.24n50
xgh2
IXGH24N60BU1
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Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP 5ÖE D 204^107 QQ001S7 0 ^ HIDIX DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 Data Sheet No.: FSDP-102-A1 0 3 '1 3 1 AMP FAST RECOVERY SILICON DIODES VOLTAGE RANGE 50 to 1000 Volts
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QQ001S7
FSDP-102-A1
DO-41
DO-41,
MIL-STD-202,
DB25/T
DB25/W
DB25P/T
DB25P/W
O-220
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PDF
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Untitled
Abstract: No abstract text available
Text: E DIOTEr ELECTRONICS CORP SflE D DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax:(310)767-7958 • 2flim G7 GOODlbl S I T H I D I X Data Sheet No.: FSDP-102-A3 ' T ' ,0'3> 1 AMP HIGH RELIABILITY FAST RECOVERY DIODES
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FSDP-102-A3
DO-41
DB25/T
DB25/W
DB25P/T
DB25P/W
O-220
O-247)
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PDF
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CURVES01
Abstract: ITZ25F12P DS5054
Text: @ M IT E L ITZ25F12 _ Powerline N-Channel IGBT S E M IC O N D U C T O R A. . , A d van ce Information DS5054-1.2 January 1999 The ITZ25F12 is a ve ry robust non punch through nc h a n n e l, e n h a n c e m e n t m ode in s u la te d g a te b ip o la r
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ITZ25F12
DS5054-1
ITZ25F12
CURVES01
ITZ25F12P
DS5054
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PDF
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Untitled
Abstract: No abstract text available
Text: DIOTEC E L E C T R O N I C S CORP ess SflE » • 2Ô4T1D7 OOOOOCH IDIX MSS DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 Data Sheet No.: SBDA-102-A 1 AMP SCHOTTKY BARRIER RECTIFIERS FEATURES:
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SBDA-102-A
DO-41
DB25/T
DB25/W
DB25P/T
DB25P/W
O-220
O-247)
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