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    PEI-GENESIS BACC45FT16-10P7H

    CONN PLG HSG MALE 10POS INLINE
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    DigiKey BACC45FT16-10P7H Bulk 134 1
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    Vishay Semiconductors T1610P-SD-F

    SENSOR PHOTODIODE 560NM DIE
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    Electroverge T1610P-SD-F

    SENSOR PHOTODIODE 560NM DIE
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    Festo DGST-16-10-PA

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    Amphenol Aerospace MS3450KT16-10P

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    Newark MS3450KT16-10P Bulk 1
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    Interstate Connecting Components MS3450KT16-10P
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    T1610P Datasheets (1)

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    T1610P-SD-F Vishay Semiconductor Opto Division Sensors, Transducers - Optical Sensors - Photodiodes - PHOTODIODE PIN CHIP 560NM CHIP Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: T1610P Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.97 x 2.97 x 0.28 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 7.7 • High photo sensitivity


    Original     		T1610P T1610P 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: T1610P www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip A • Package form: single chip • Dimensions L x W x H in mm : 2.97 x 2.97 x 0.28 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 7.7


    Original     		T1610P T1610P 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    FVOV6870

    Abstract: MIL-HDBK-263
    Text: T1610P Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.97 x 2.97 x 0.28 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 7.7 • High photo sensitivity


    Original     		T1610P T1610P 2002/95/EC 2002/96/EC 11-Mar-11 FVOV6870 MIL-HDBK-263 PDF

    Untitled

    Abstract: No abstract text available
    Text: T1610P Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.97 x 2.97 x 0.28 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 7.7 • High photo sensitivity


    Original     		T1610P T1610P 2002/95/EC 18-Jul-08 PDF

    FVOV6870

    Abstract: MIL-HDBK-263 PIN photodiode chip photodiode die WAFER
    Text: T1610P Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.97 x 2.97 x 0.28 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 7.7 • High photo sensitivity


    Original     		T1610P T1610P 2002/95/EC 2002/96/EC 18-Jul-08 FVOV6870 MIL-HDBK-263 PIN photodiode chip photodiode die WAFER PDF

    FVOV6870

    Abstract: MIL-HDBK-263 chip diode "sawn on foil" photodiode CIE eye response
    Text: T1610P Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.97 x 2.97 x 0.28 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 7.7 • High photo sensitivity


    Original     		T1610P T1610P 2002/95/EC 2002/96/EC 18-Jul-08 FVOV6870 MIL-HDBK-263 chip diode "sawn on foil" photodiode CIE eye response PDF

    Untitled

    Abstract: No abstract text available
    Text: T1610P Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.97 x 2.97 x 0.28 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 7.7 • High photo sensitivity


    Original     		T1610P T1610P 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Bare Die Optoelectronics Bare Die Portfolio Infrared Emitters and Photo Detectors TABLE OF CONTENTS Introduction to Bare


    Original     		VMN-SG2200-1502 PDF