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T1S12N60C3 Price and Stock

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Rochester Electronics LLC HGT1S12N60C3 27A, 600V, UFS N-CHANNEL IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGT1S12N60C3	Bulk			195	1 - 10 - 100 - 1000 $1.54 10000 $1.54	Buy Now
Rochester Electronics LLC HGT1S12N60C3D 24A, 600V, N-CHANNEL IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGT1S12N60C3D	Bulk			226	1 - 10 - 100 - 1000 $1.33 10000 $1.33	Buy Now
Rochester Electronics LLC HGT1S12N60C3R IGBT 600V 24A I2PAK
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DigiKey	HGT1S12N60C3R	Bulk			229	1 - 10 - 100 - 1000 $1.31 10000 $1.31	Buy Now
Rochester Electronics LLC HGT1S12N60C3DS IGBT, 24A, 600V, N-CHANNEL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGT1S12N60C3DS	Bulk			143	1 - 10 - 100 - 1000 $2.1 10000 $2.1	Buy Now
Rochester Electronics LLC HGT1S12N60C3S9AR4501 27A, 600V, UFS N-CHANNEL IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGT1S12N60C3S9AR4501	Bulk			190	1 - 10 - 100 - 1000 $1.58 10000 $1.58	Buy Now

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T1S12N60C3 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
p12n60c3 Abstract: p12n60 P12N60C T1S12 HRP1560 s12n S12N60C3 HGTP12N60 S12N60C Text: HARRIS HGTP12N60C3, T1S12N60C3, T1S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Chan nel IG BTs Jan ua ry 1997 F ea tu res Description • 24A, 600V at Tc = 25 °C The HGTP12N60C3, H G T1S12N60C3 and HG T1S12N60C3S are MOS gated high voltage switching devices combining the	OCR Scan	PDF	HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S T1S12N60C3 T1S12N60C3S p12n60c3 p12n60 P12N60C T1S12 HRP1560 s12n S12N60C3 HGTP12N60 S12N60C
2n60c3 Abstract: 12n60c3d 2n60c 2N60C3D TA49182 IGBT 12n60c3D transistor TE 901 equivalent 12n60c 2n60 TO-262AA equivalent Text: l j A D D HGTP12N60C3D, h g t i s i 2N60C3D, T1S12N60C3DS I S 24A , 600V, U F S S e r i e s N - C h a n n e l I G B T with An ti -Parai I el H y p erfa st Di o d es January 1997 Features Description • 24A, 600V at Tc = 25 °C This family of MOS gated high voltage switching devices	OCR Scan	PDF	HGTP12N60C3D, 2N60C3D, HGT1S12N60C3DS TA49123. TA49188. 2n60c3 12n60c3d 2n60c 2N60C3D TA49182 IGBT 12n60c3D transistor TE 901 equivalent 12n60c 2n60 TO-262AA equivalent
p12n60c3 Abstract: p12n60 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 LD26 S12N60C3 TA49123 Text: i n t e HGTP12N60C3, T1S12N60C3S r r i i J a n u a ry . m D ata S h eet 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and T1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have	OCR Scan	PDF	HGTP12N60C3 HGT1S12N60C3S TA49123. HGTP12N60rporation p12n60c3 p12n60 HGT1S12N60C3S9A LD26 S12N60C3 TA49123
p12n60c3 Abstract: S12N60C3 Text: HARRIS HGTP12N60C3, T1S12N60C3, T1S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBTs January 1 9 9 7 Features Description • 24A, 600V at T c = 25°C The HGTP12N60C3, T1S12N60C3 and T1S12N60C3S are MOS gated high voltage switching devices combining the	OCR Scan	PDF	HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S HGT1S12N60C3 230ns p12n60c3 S12N60C3