zener 1B7
Abstract: 125c79 hitachi suffix Hitachi "v suffix" IN5223B 1N5223 1N5226 1N5223A 1N5224 1N5258
Text: blE D • M4Tb2DS OOIMOSS T2D ■ H I T M HITACHI/ OPTOELECTRONICS Appendix D 500-mW Zener Regulator Diodes 1N5223 through 1N5258 1N5223A through 1N5258A 1N5223B through 1N5258B Table D - l Absolute M axim um Ratings Item Symbol Rating Unit Notes Forward Voltage
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500-mW
1N5223
1N5258
1N5223A
1N5258A
1N5223B
1N5258B
1N5251
1N5252
1N5253
zener 1B7
125c79
hitachi suffix
Hitachi "v suffix"
IN5223B
1N5226
1N5224
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T2D DIODE
Abstract: RFN-10 RFN10T2D T2D 40 DIODE T2D 6 N diode T2D 75 diode T2D 8 diode T2D 80 T2D 1 DIODE RFN10
Text: Data Sheet Super Fast Recovery Diode RFN10T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 ① 1.3 0.8 13.5MIN 1.2 Construction Silicon epitaxial planer 5.0±0.2 RFN10 T2D ①
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RFN10T2D
RFN10
O-220)
O220FN
R1120A
T2D DIODE
RFN-10
RFN10T2D
T2D 40 DIODE
T2D 6 N diode
T2D 75 diode
T2D 8 diode
T2D 80
T2D 1 DIODE
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RFN-10
Abstract: T2D DIODE RFN10 T2D 14 DIODE RFN10 DIODE T2D 40 DIODE T2D 6 DIODE T2D 75 diode T2D 8 diode T2D 6 N diode
Text: RFN10T2D Data Sheet Super Fast Recovery Diode RFN10T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 ① 1.3 0.8 13.5MIN 1.2 Construction Silicon epitaxial planer 5.0±0.2 RFN10
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RFN10T2D
RFN10
O-220)
O220FN
R1120A
RFN-10
T2D DIODE
T2D 14 DIODE
RFN10 DIODE
T2D 40 DIODE
T2D 6 DIODE
T2D 75 diode
T2D 8 diode
T2D 6 N diode
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T2D DIODE
Abstract: T2D DIODE 02 T2D 80_ diode T2D DIODE 16 T2D 80 diode
Text: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN10T2DFH Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 ① 1.3 0.8 13.5MIN 1.2 Construction Silicon epitaxial planer 5.0±0.2
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AEC-Q101
RFN10T2DFH
RFN10
O-220)
O220FN
R1120A
T2D DIODE
T2D DIODE 02
T2D 80_ diode
T2D DIODE 16
T2D 80 diode
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westcode stud base diode SI 2
Abstract: 140ak
Text: TECHN IC AL WESTCODE SEMICONDUCTORS PUBLICATION D P40 IS S U E 1 March, 1ÖBO Stud-Base Silicon Rectifier Diodes Type PCN/PCR040 70amperes average: up to 1600 volts RATING S Maximum values at 175'5C Tj unless stated otherwise R A TIN G SVMBOL C O N D IT IO N S
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OCR Scan
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PCN/PCR040
70amperes
2Q49A5
s-2710
-B5rt175cC
westcode stud base diode SI 2
140ak
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T2D 62 diode
Abstract: T2D 98 DIODE T2D 70 diode T2D 27 diode
Text: FU JI tì'utìiEirutìUK 2SK2645-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2£2 50W Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Repetitive Avalanche Rated
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OCR Scan
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2SK2645-01MR
O-220F15
T2D 62 diode
T2D 98 DIODE
T2D 70 diode
T2D 27 diode
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PDF
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T2D 85 diode
Abstract: T2D 65 DIODE T2D DIODE T2D 54 DIODE T2D 8 diode T2D DIODE 45 T2D 09 diode 23/ZENER DIODE t2d 54
Text: IRLS510A Advanced Power MOSFET FEATURES BVDss = 100 V • Logic Level Gate Drive ■ Avalanche Rugged Technology ^DS on ■ Rugged Gate Oxide Technology lD = 4.5 A ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA (Max.) @ VOS = 100V
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OCR Scan
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IRLS510A
O-220F
71b4m2
D3T23b
T2D 85 diode
T2D 65 DIODE
T2D DIODE
T2D 54 DIODE
T2D 8 diode
T2D DIODE 45
T2D 09 diode
23/ZENER DIODE t2d 54
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T2D 22 diode
Abstract: T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode
Text: BDT60;60A BDT60B;60C y v SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit fo r audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA
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OCR Scan
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BDT60
BDT60B
BDT61,
BDT61A,
BDT61B
BDT61C.
BDT60
T2D 22 diode
T2D 56 DIODE
T2D DIODE
diode t2d 05
T2D 70 diode
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PDF
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34B SOT
Abstract: NDT455N
Text: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is
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OCR Scan
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NDT455N
NDT455N
OT-223
34B SOT
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PDF
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T2D 24 DIODE
Abstract: T2d 43 diode T2D 65 DIODE T2d 61 diode T2D DIODE 42 T2D DIODE 32 T2D 04 DIODE diode T2D
Text: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is
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OCR Scan
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NDT455N
OT-223
NDT455N
OT-223
T2D 24 DIODE
T2d 43 diode
T2D 65 DIODE
T2d 61 diode
T2D DIODE 42
T2D DIODE 32
T2D 04 DIODE
diode T2D
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PDF
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T2D 96 diode
Abstract: T2D 78 diode T2D 44 diode t2d 76 diode value T2D DIODE 29 T2D DIODE T2D 36 DIODE T2D 19 diode T2D 53 DIODE T2D DIODE 96
Text: SbE ]> • 7*^237 Q0MD1S5 [j^DÊKOitLllÊÎ^OKOQigS G y M54HC365/366 M74HC365/366 S C S -T H O M S O N S ISA M S G T H S-THOMSON HEX BUS BUFFER 3-STATE HC365 NON-INVERTING - HC366 INVERTING PRELIMINARY DATA ■ HIGH SPEED tpD = 13 ns (Typ) at V<x = 5V ■ LOW POWER DISSIPATION
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OCR Scan
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M54HC365/366
M74HC365/366
HC365
HC366
HC365
M54/74HHARACTERISTICS
T2D 96 diode
T2D 78 diode
T2D 44 diode
t2d 76 diode value
T2D DIODE 29
T2D DIODE
T2D 36 DIODE
T2D 19 diode
T2D 53 DIODE
T2D DIODE 96
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PDF
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UC1838
Abstract: No abstract text available
Text: UNITRODE CORP /UN ITRODE IC ^2» D I 'iaMflSl'J QGQ'l'IBS 3 • UNI LINEAR INTEGRATED CIRCUITS 7 ^ r v / '3 V UC1838 UC2838 UC3838 Magnetic Amplifier Controller F EA TU RES • Independent 1% Reference • Two U n com m itted, Identical O perational A m p lifie rs
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OCR Scan
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UC1838
UC2838
UC3838
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PDF
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T2D 95
Abstract: 74FCT244D T2D 70 diode t2d diodes ML65245 SRAM 256KB 6ns signal path designer T2D 83 diode transistor t2d FCT541
Text: June 1996 Application Note 42005 ML65244, ML65245 and ML65541 Ultra Fast Octal Buffer/Transceiver Family INTRODUCTION In the design of VLSI circuits and digital systems, the term buffer refers to a circuit’s ability to drive load capacitance significantly larger than its own input capacitance. In
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ML65244,
ML65245
ML65541
100pF
T2D 95
74FCT244D
T2D 70 diode
t2d diodes
SRAM 256KB 6ns
signal path designer
T2D 83 diode
transistor t2d
FCT541
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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30PF
Abstract: DS3893A DS3893AV V20A
Text: DS3893A National Semiconductor DS3893A BTL TURBOTRANSCEIVER General Description The TURBOTRANSCEIVER is designed for use in very high speed bus systems. The bus terminal characteristics of the TURBOTRANSCEIVER are referred to as "Backplane Transceiver Logic” BTL . BTL is a new logic signaling stan
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OCR Scan
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DS3893A
TL/F/B69B-9
0Q740bl
30PF
DS3893AV
V20A
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PDF
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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PDF
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T2D 85 diode
Abstract: FBC 320 T2D 1 DIODE T2D 24 DIODE T2D 04 DIODE IN T2D DIODE T2D 09 diode
Text: MP7628 -A ^ L Quad Multiplying 8-Bit Digital-to-Analoc Converter Micro Power Systems FEATURES APPLICATIONS • • • • • • • • • Microprocessor Controlled Gain anci Attenuation Circuits • Microprocessor Controlled/Program liable Power Supplies
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OCR Scan
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MP7628
MP7628
T2D 85 diode
FBC 320
T2D 1 DIODE
T2D 24 DIODE
T2D 04 DIODE
IN T2D DIODE
T2D 09 diode
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PDF
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T2D 70 diode
Abstract: T2D DIODE
Text: /T L inTECHNOLOGY e A ß _ asa AppleTalk Transceiver FCflTUfteS DCSC RIPTIOn • Single Chip Provides Complete LocalTalk®/AppleTalk® Port ■ Low Power: lcc = 1-2mA Typ ■ Shutdown Pin Reduces Icc to 30|iA Typ ■ Drivers Maintain High Impedance in Three-State
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OCR Scan
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LTC1320
RS422/RS562
RS422
RS562
LT1054
551fiMbfl
T2D 70 diode
T2D DIODE
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PDF
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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PDF
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diode t2d 77
Abstract: T2D 21 diode T2D 24 DIODE T2D 40 DIODE FBC 320 a BA 4213 T2D 80 diode T2D 09 diode T2D 27 diode diode t2d 80
Text: MP7628 g » E X 4 5 V CMOS Quad Multiplying 8-Bit Digital-to-Analog Converter R FEATURES APPLICATIONS • • • • • • • • • • Microprocessor Controlled Gain and Attenuation Circuits • Microprocessor Controlled/Programmable Power Supplies
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OCR Scan
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MP7628
MP7529B
P7628
diode t2d 77
T2D 21 diode
T2D 24 DIODE
T2D 40 DIODE
FBC 320 a
BA 4213
T2D 80 diode
T2D 09 diode
T2D 27 diode
diode t2d 80
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PDF
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MP7680JN
Abstract: No abstract text available
Text: MP7680 5 V CM O S 12-Bit Quad Double-Buffered Multiplying Digita!-to-Analog Converter 2B TEX AR FEATURES • • • • • • • • • Exar Pioneered Segmented DAC Approach Four Double-Buffered 12-bit DACs on a Single Chip Independent Reference Inputs
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OCR Scan
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MP7680
12-bit
MP7680
MP7680JN
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PDF
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octal 548
Abstract: 5x2 connector header NX 38 HEADER 5X2 560pF T2D 87 diode t2d 68 chips t2d diode T2D T2D 26 diode
Text: LXD381 — Evaluation Board for Octal E1 Applications Developer Manual January 2001 As of January 15, 2001, this document replaces the Level One document LXD381 — Evaluation Board for Octal E1 Applications User Guide. Order Number: 249213-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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LXD381
560pF
TG-49-1505-NX
LXD381
octal 548
5x2 connector header
NX 38
HEADER 5X2
560pF
T2D 87 diode
t2d 68
chips t2d
diode T2D
T2D 26 diode
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PDF
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T2D 24 DIODE
Abstract: T2d 43 diode
Text: MP7680 5 V C M O S 12-Bit Quad Double-Buffered Multiplying Digital-to-Analog Converter FEATURES BENEFITS • • • • • • • • • • Reduced Board Space; Lower System Cost. • Independent Control of DACs • Excellent DAC-to-DAC Matching and Tracking
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OCR Scan
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MP7680
12-Bit
12-bit
3455blfl
3422bl6
QDQ741Q
T2D 24 DIODE
T2d 43 diode
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PDF
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T2D 52 diode
Abstract: T2D 00 DIODE T2D 80 diode am/T2D DIODE
Text: For Immediate Assistance, Contact Your Local Salesperson B U R R - BROW N» E 722 1 DUAL ISOLATED DC/DC CONVERTER FEATURES APPLICATIONS • DUAL ISOLATED ±5V TO ±16V OUTPUTS • MEDICAL EQUIPMENT • HIGH BREAKDOWN VOLTAGE: 8000V Test • INDUSTRIAL PROCESS CONTROL
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OCR Scan
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40V/60HZ
T2D 52 diode
T2D 00 DIODE
T2D 80 diode
am/T2D DIODE
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PDF
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