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    T2D DIODE 60 Search Results

    T2D DIODE 60 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    T2D DIODE 60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    T2D diode

    Abstract: diode t2d T2D 16 DIODE T2D 80 diode T2D DIODE 60 T2D DIODE 25 T2D 80_ diode diode t2d 05 diode t2d 80 RFN16T2D
    Text: Data Sheet Super Fast Recovery Diode RFN16T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 5.0±0.2 RFN16 T2D ① Construction Silicon epitaxial planer 1.2 1.3 14.0±0.5 13.5MIN


    Original     		RFN16T2D O-220) RFN16 O220FN R1120A T2D diode diode t2d T2D 16 DIODE T2D 80 diode T2D DIODE 60 T2D DIODE 25 T2D 80_ diode diode t2d 05 diode t2d 80 RFN16T2D PDF

    T2D DIODE

    Abstract: RFN-10 RFN10T2D T2D 40 DIODE T2D 6 N diode T2D 75 diode T2D 8 diode T2D 80 T2D 1 DIODE RFN10
    Text: Data Sheet Super Fast Recovery Diode RFN10T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 ① 1.3 0.8 13.5MIN 1.2 Construction Silicon epitaxial planer 5.0±0.2 RFN10 T2D ①


    Original     		RFN10T2D RFN10 O-220) O220FN R1120A T2D DIODE RFN-10 RFN10T2D T2D 40 DIODE T2D 6 N diode T2D 75 diode T2D 8 diode T2D 80 T2D 1 DIODE PDF

    T2D DIODE

    Abstract: T2D 16 DIODE T2D DIODE 25 diode t2d 05 jc-115 T2D 80 diode diode t2d 80 RFN16T2D T2d 30 diode RFN16
    Text: RFN16T2D Data Sheet Super Fast Recovery Diode RFN16T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 5.0±0.2 RFN16 T2D ① Construction Silicon epitaxial planer 1.2 1.3 14.0±0.5


    Original     		RFN16T2D O-220) RFN16 O220FN R1120A T2D DIODE T2D 16 DIODE T2D DIODE 25 diode t2d 05 jc-115 T2D 80 diode diode t2d 80 RFN16T2D T2d 30 diode PDF

    T2D DIODE

    Abstract: T2D DIODE 02
    Text: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN16T2DFH Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 5.0±0.2 RFN16 T2D ① Construction Silicon epitaxial planer 1.2


    Original     		AEC-Q101 RFN16T2DFH RFN16 O-220) O220FN R1120A T2D DIODE T2D DIODE 02 PDF

    T2D 62 diode

    Abstract: T2D 98 DIODE T2D 70 diode T2D 27 diode
    Text: FU JI tì'utìiEirutìUK 2SK2645-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2£2 50W Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Repetitive Avalanche Rated


    OCR Scan     		2SK2645-01MR O-220F15 T2D 62 diode T2D 98 DIODE T2D 70 diode T2D 27 diode PDF

    T2D 22 diode

    Abstract: T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode
    Text: BDT60;60A BDT60B;60C y v SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit fo r audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA


    OCR Scan     		BDT60 BDT60B BDT61, BDT61A, BDT61B BDT61C. BDT60 T2D 22 diode T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode PDF

    t2d diode

    Abstract: T2D 80 diode T2D 40 DIODE T2D 80_ diode RFN20 DIODE diode t2d 05 T2D DIODE 60 RFN20T2D RFN20 RFN-20
    Text: Data Sheet Super Fast Recovery Diode RFN20T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1)Cathode common Dual type. (TO-220) 2)Low VF 8.0±0.2


    Original     		RFN20T2D O-220) RFN20 O220FN R1120A t2d diode T2D 80 diode T2D 40 DIODE T2D 80_ diode RFN20 DIODE diode t2d 05 T2D DIODE 60 RFN20T2D RFN-20 PDF

    T2D 40 DIODE

    Abstract: No abstract text available
    Text: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20T2DFH Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1)Cathode common Dual type. (TO-220)


    Original     		AEC-Q101 RFN20T2DFH O-220) RFN20 O220FN R1120A T2D 40 DIODE PDF

    T2D DIODE

    Abstract: T2D 83 diode T2D DIODE 69 T2D 83 T2D 17 DIODE diode T2D T2D DIODE 60 T2D 51 DIODE T2D DIODE 94 T2D 94
    Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS F5F1 PACKAGE DIMENSIONS ES^#RIPTI The F5F1 is a 940nm LED encapsulated in a clear, wide angle, sidelooker package. i t Black Color Code E T T~ II SECTION X-X LEAD PROFILE FEA TU RES G ood optical to m echanical alignm ent


    OCR Scan     		940nm T2D DIODE T2D 83 diode T2D DIODE 69 T2D 83 T2D 17 DIODE diode T2D T2D DIODE 60 T2D 51 DIODE T2D DIODE 94 T2D 94 PDF

    T2D diode

    Abstract: T2D 80 diode RFN20 RFN20T2D RFN20 DIODE T2D DIODE 60 T2D 09 diode T2D 40 DIODE T2D 80_ diode diode t2d 05
    Text: RFN20T2D Data Sheet Super Fast Recovery Diode RFN20T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1)Cathode common Dual type. (TO-220) 2)Low VF


    Original     		RFN20T2D O-220) RFN20 O220FN R1120A T2D diode T2D 80 diode RFN20T2D RFN20 DIODE T2D DIODE 60 T2D 09 diode T2D 40 DIODE T2D 80_ diode diode t2d 05 PDF

    RFN-10

    Abstract: T2D DIODE RFN10 T2D 14 DIODE RFN10 DIODE T2D 40 DIODE T2D 6 DIODE T2D 75 diode T2D 8 diode T2D 6 N diode
    Text: RFN10T2D Data Sheet Super Fast Recovery Diode RFN10T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 ① 1.3 0.8 13.5MIN 1.2 Construction Silicon epitaxial planer 5.0±0.2 RFN10


    Original     		RFN10T2D RFN10 O-220) O220FN R1120A RFN-10 T2D DIODE T2D 14 DIODE RFN10 DIODE T2D 40 DIODE T2D 6 DIODE T2D 75 diode T2D 8 diode T2D 6 N diode PDF

    T2D DIODE

    Abstract: T2D DIODE 02 T2D 80_ diode T2D DIODE 16 T2D 80 diode
    Text: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN10T2DFH Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 ① 1.3 0.8 13.5MIN 1.2 Construction Silicon epitaxial planer 5.0±0.2


    Original     		AEC-Q101 RFN10T2DFH RFN10 O-220) O220FN R1120A T2D DIODE T2D DIODE 02 T2D 80_ diode T2D DIODE 16 T2D 80 diode PDF

    34B SOT

    Abstract: NDT455N
    Text: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		NDT455N NDT455N OT-223 34B SOT PDF

    T2D 96 diode

    Abstract: T2D 78 diode T2D 44 diode t2d 76 diode value T2D DIODE 29 T2D DIODE T2D 36 DIODE T2D 19 diode T2D 53 DIODE T2D DIODE 96
    Text: SbE ]> • 7*^237 Q0MD1S5 [j^DÊKOitLllÊÎ^OKOQigS G y M54HC365/366 M74HC365/366 S C S -T H O M S O N S ISA M S G T H S-THOMSON HEX BUS BUFFER 3-STATE HC365 NON-INVERTING - HC366 INVERTING PRELIMINARY DATA ■ HIGH SPEED tpD = 13 ns (Typ) at V<x = 5V ■ LOW POWER DISSIPATION


    OCR Scan     		M54HC365/366 M74HC365/366 HC365 HC366 HC365 M54/74HHARACTERISTICS T2D 96 diode T2D 78 diode T2D 44 diode t2d 76 diode value T2D DIODE 29 T2D DIODE T2D 36 DIODE T2D 19 diode T2D 53 DIODE T2D DIODE 96 PDF

    T2D 70 diode

    Abstract: T2D DIODE
    Text: /T L inTECHNOLOGY e A ß _ asa AppleTalk Transceiver FCflTUfteS DCSC RIPTIOn • Single Chip Provides Complete LocalTalk®/AppleTalk® Port ■ Low Power: lcc = 1-2mA Typ ■ Shutdown Pin Reduces Icc to 30|iA Typ ■ Drivers Maintain High Impedance in Three-State


    OCR Scan     		LTC1320 RS422/RS562 RS422 RS562 LT1054 551fiMbfl T2D 70 diode T2D DIODE PDF

    diode t2d 77

    Abstract: T2D 21 diode T2D 24 DIODE T2D 40 DIODE FBC 320 a BA 4213 T2D 80 diode T2D 09 diode T2D 27 diode diode t2d 80
    Text: MP7628 g » E X 4 5 V CMOS Quad Multiplying 8-Bit Digital-to-Analog Converter R FEATURES APPLICATIONS • • • • • • • • • • Microprocessor Controlled Gain and Attenuation Circuits • Microprocessor Controlled/Programmable Power Supplies


    OCR Scan     		MP7628 MP7529B P7628 diode t2d 77 T2D 21 diode T2D 24 DIODE T2D 40 DIODE FBC 320 a BA 4213 T2D 80 diode T2D 09 diode T2D 27 diode diode t2d 80 PDF

    BUF601

    Abstract: BUF600
    Text: BUF600/601 Or, Call Customer Service at 1-800-548-6132 USA Only FEATURES APPLICATIONS • OPEN-LOOP BUFFER • VIDEO BUFFER/LINE DRIVER • INPUT/OUTPUT AMPLIFIER FOR MEASUREMENT EQUIPMENT • PORTABLE SYSTEMS • TRANSMISSION SYSTEMS • TELECOMMUNICATIONS


    OCR Scan     		BUF600/601 600V/ps, 320MHz, 900MHz, 300MHz BUF600/601 600V/ns 320MHz 17313LS BUF601 BUF600 PDF

    T2D 52 diode

    Abstract: T2D 00 DIODE T2D 80 diode am/T2D DIODE
    Text: For Immediate Assistance, Contact Your Local Salesperson B U R R - BROW N» E 722 1 DUAL ISOLATED DC/DC CONVERTER FEATURES APPLICATIONS • DUAL ISOLATED ±5V TO ±16V OUTPUTS • MEDICAL EQUIPMENT • HIGH BREAKDOWN VOLTAGE: 8000V Test • INDUSTRIAL PROCESS CONTROL


    OCR Scan     		40V/60HZ T2D 52 diode T2D 00 DIODE T2D 80 diode am/T2D DIODE PDF

    HP5082-2835

    Abstract: MP7680 MP7680JE MP7680JN MP7680KE MP7680KN
    Text: MP7680 5 V CMOS 12-Bit Quad Double-Buffered Multiplying Digital-to-Analog Converter JE’ E X q R March 1998-3 FEATURES • • • • • • • • • Exar Pioneered Segmented DAC Approach Four Double-Buffered 12-bit DACs on a Single Chip Independent Reference Inputs


    OCR Scan     		12-bit TTL75 MP7680 34B2bia 3425fcilfl 00G77Ã HP5082-2835 MP7680 MP7680JE MP7680JN MP7680KE MP7680KN PDF

    T2D 44 diode

    Abstract: T2D DIODE 44 T2D DIODE 42 T2d 03 diode T2D 37 DIODE T2D DIODE 43 T2D 24 DIODE T2D DIODE 32 T2D diode t2d 17 diode
    Text: MP7680 5 V CMOS 12-Bit Quad Double-Buffered Multiplying Digital-to-Analog Converter JE’ E X q R March 1998-3 FEATURES • • • • • • • • • Exar Pioneered Segmented DAC Approach Four Double-Buffered 12-bit DACs on a Single Chip Independent Reference Inputs


    OCR Scan     		MP7680 12-Bit TTL75 22blA 00Q77 00G77 T2D 44 diode T2D DIODE 44 T2D DIODE 42 T2d 03 diode T2D 37 DIODE T2D DIODE 43 T2D 24 DIODE T2D DIODE 32 T2D diode t2d 17 diode PDF

    T2d DIODE

    Abstract: T2D DIODE 48 T2D 66 diode T2D DIODE 46 T2d 86 diode T2D DIODE 49 T2D 83 DIODE T2D 84 diode T2D 87 diode T2D DIODE 42
    Text: 5 4 3 2 1 D D RP19 2.7k INIT DONE C20 22uF Vcc3v3 1 2 J16 + + 1 3 2 1 3 4 C17 0.1uF RP36 2.7k C102 C103 C104 C105 C106 C107 C108 C109 C110 C111 C112 C113 C114 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 2 1 PGM INIT


    Original     		384MHz DESIGN\XRT86SH221\REV2\SCHEMATIC\T86SH XRT86SH221 T2d DIODE T2D DIODE 48 T2D 66 diode T2D DIODE 46 T2d 86 diode T2D DIODE 49 T2D 83 DIODE T2D 84 diode T2D 87 diode T2D DIODE 42 PDF

    T2D DIODE 46

    Abstract: T2D DIODE 48 T2D 87 diode T2D 82 diode T2d 86 diode T3D 54 DIODE t3d diode T2D DIODE T2D 66 diode T2D 83 DIODE
    Text: XRT86SH221ES Rev 1.00 Voyager Lite Evaluation System User Manual XRT86SH221ES Evaluation System User Manual 1 XRT86SH221ES Rev 1.00 Voyager Lite Evaluation System User Manual TABLE OF CONTENTS SECTION 1


    Original     		XRT86SH221ES XRT86SH221 T2D DIODE 46 T2D DIODE 48 T2D 87 diode T2D 82 diode T2d 86 diode T3D 54 DIODE t3d diode T2D DIODE T2D 66 diode T2D 83 DIODE PDF

    Piezo Ceramic plates

    Abstract: ampli de 60w NFC ferrite 595D AN19 FDS6688 LTC3731 LTC3731CG LTC3731CUH T510
    Text: Electrical Specifications Subject to Change LTC3731 3-Phase, 600kHz, Synchronous Buck Switching Regulator Controller October 2002 DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ±5% Output Current Matching Optimizes Thermal


    Original     		LTC3731 600kHz, 250kHz 600kHz 12-Phase, SSOP-36 LTC3778 TSSOP-20 3731i Piezo Ceramic plates ampli de 60w NFC ferrite 595D AN19 FDS6688 LTC3731 LTC3731CG LTC3731CUH T510 PDF

    Piezo Ceramic plates

    Abstract: ZENER DIODE t2d 700v 7.5A mosfet NFC ferrite REGULATOR IC FOR 150V 595D AN19 FDS6688 LTC3732 LTC3732CG
    Text: Final Electrical Specifications LTC3732 3-Phase, 5-Bit VID, 600kHz, Synchronous Buck Switching Regulator Controller • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 3732 is a PolyPhaseTM synchronous step-down switching regulator controller that drives all N-channel


    Original     		LTC3732 600kHz, 600kHz 24-Pin 12-Phase, 3732i Piezo Ceramic plates ZENER DIODE t2d 700v 7.5A mosfet NFC ferrite REGULATOR IC FOR 150V 595D AN19 FDS6688 LTC3732 LTC3732CG PDF