2SC2757
Abstract: t34 transistor transistor marking RF marking T34 RF TRANSISTOR marking T32 RF POWER TRANSISTOR NPN
Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2757 DESCRIPTION •Low Noise ·High Current-Gain Bandwidth Product APPLICATIONS ·Designed for use in VHF RF amplifier, local oscillator, mixer. ABSOLUTE MAXIMUM RATINGS Ta=25℃
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2SC2757
2SC2757
t34 transistor
transistor marking RF
marking T34
RF TRANSISTOR
marking T32
RF POWER TRANSISTOR NPN
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marking 1147 IC 6 pin
Abstract: 2SC4182 marking t32
Text: DATA SHEET SILICON TRANSISTOR 2SC4182 UHF/VHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4182 is designed for use as an oscillator or a mixer in a VHF in millimeters TV tuners. Super mini mold package makes it suitable for use in small
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2SC4182
2SC4182
marking 1147 IC 6 pin
marking t32
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BFW92A
Abstract: SP 1191 BFW92 transistor BFW92A
Text: bbS3T31 Philips S em iconductors DD3Sm2 T34 Product specification APX NPN 3 GHz wideband transistor BFW92A N AMER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a plastic SOT37 envelope. DESCRIPTION PIN It is primarily Intended for use in amplifiers in the 40 to 860 MHz
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bbS3T31
0D32142
BFW92A
BFW92A
BFW92
BFW92A/02
SP 1191
transistor BFW92A
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UFN423
Abstract: FN421 FN423 FN420 ufn 423
Text: TS 1 F 1 T34?TbB DDlGt7H S UNITRODE CORP 9347963 U NI TRÖ DE CORP 92D 10672 D ^ "K POWER MOSFET TRANSISTORS [“ 500 Volt, 3.0 Ohm N-Channel UFN422 UFN423 FEATURES • Fast Sw itching • Low Drive Current • Ease of Paralleling « No Second Breakdow n DESCRIPTION
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UFN422
UFN423
UFN420
FN422
756VOSS
UFN423
FN421
FN423
FN420
ufn 423
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors H bb53T31 0D32142 T34 M A P X _Product specification NPN 3 GHz w ideband transistor ^ BFW 92A N AllER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a plastic SOT37 envelope. It is primarily intended for use in amplifiers in the 40 to 860 MHz
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bb53T31
0D32142
BFW92A/02
BFW92A
BFW92
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Untitled
Abstract: No abstract text available
Text: N AflER PHILIPS/DISCRETE b^E D 0057b72 T34 • APX BF240 BF241 b b S B 'I B l Jl HF SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in a plastic envelope, recommended for AM mixers and IF amplifiers in AM/FM receivers. QUICK REFERENCE DATA Collector-base voltage open emitter
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0057b72
BF240
BF241
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2N3571
Abstract: 2N3570 2N4253 2N4252 2N3571 NPN BFT32 BFT33 BFT34 BFT35 BFT36
Text: Discrete Semiconductors T e x a s In s t r u m e n t s Polarity High C u rren t A m p lifiers and S w itch es Device Type M axim um ratings Case BV BV BV CBO CEO EBO IC M Ic V V mA mA min. max. mA min. 30 30 30 30 30 30 V BFT32 hFE1 hFE 2 BF T33 BF T34 NPN
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BFT32
BFT33
BFT34
fBFT35
BFT35
BFT36
BFT37
Max50
2N3571
2N3570
2N4253
2N4252
2N3571 NPN
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buw34
Abstract: BUW35 2N6675 BU208A buw44 BDW52 bdx85 BU208 BUX80 2N6674
Text: Power Transistors TO-3 Case Continued TYPE NO. NPN PNP 2N6674 *C Pd (A) <W) MAX 15 2N6675 BVc b O BV c e o (V) MIN 175 350 (V) MIN 300 e ie hFE TYP (A) 8.0 (V) @,c fr *TYP (A) (MHZ) MAX MAX MIN v CE(SAT) MIN 20 . 5.0 15 15 15 175 450 400 8.0 20 . 5.0
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2N6674
2N6675
BDW51
BDW52
BDW51A
BDW52A
BDW51B
BDW52B
BDW51C
BDW52C
buw34
BUW35
2N6675
BU208A
buw44
bdx85
BU208
BUX80
2N6674
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Untitled
Abstract: No abstract text available
Text: Central" CZT5401 Sem iconductor Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEM ICO N D U CT O R CZT5401 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.
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CZT5401
OT-223
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BDW51
Abstract: buw34 BUW35 BDW52 BDX86C BU208 BUX47 BUX80 2N6674 2N6675
Text: Power Transistors TO-3 Case Continued TYPE NO. NPN PNP •c Pd (A) <W) MAX e ie hFE TYP BV c b O BV c e O (V) (V) MIN MIN MIN MAX (A) VCE(SA T) @*c fr *TYP M MAX (A) (MHZ) MIN 2N6674 15 175 350 300 8.0 20 . 5.0 15 15 2N6675 15 175 450 400 8.0 20 . 5.0
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2N6674
2N6675
BDW51
BDW52
BDW51A
BDW52A
BDW51B
BDW52B
BDW51C
BDW52C
buw34
BUW35
BDX86C
BU208
BUX47
BUX80
2N6674
2N6675
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Untitled
Abstract: No abstract text available
Text: KSR2007 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interlace circuit Driver circuit • Built in bias Resistor (R ,= 2 2K 0 R 2=47KO) • Complement to KSR1007 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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KSR2007
KSR1007
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 141W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R i= 2 2 k i2 , R 2= 2 2 k iì TT UT Pin Configuration W Ds 1 = B II CO Q 6 2 7 0 2 -C 2 2 8 8 Package o Marking Ordering Code
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833SbDS
fl23Sb05
012074E
Q12G743
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0648 ru
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4182 UHF/VHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4182 is designed for use as an oscillator or a mixer in a VHF in m illim eters TV tuners. Super mini mold package makes it suitable for use in small
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2SC4182
2SC4182
0648 ru
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2SB939
Abstract: 2SB939A 2SD1262 2SD1262A
Text: 2SD1262, 2SD1262A Power Transistors 2SD1262, 2SD1262A Package Dimensions Silicon NPN Triple-Diffused Planar Darlington Type Medium Speed Power Switching Complementary Pair with 2SB939, 2SB939A. • Features . • High DC c u rre n t gain Iifê • High speed switching '
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2SD1262,
2SD1262A
2SB939,
2SB939A.
2SD1262
2SB939
2SB939A
2SD1262A
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 400R Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from
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200mA
Q62702-C2479
OT-143R
BCR400
0235bOS
ehao7219
fl235b05
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Untitled
Abstract: No abstract text available
Text: SGS’THOMSON SD1425 RiDD g^ lilL[lC§Tls3©R!lDÊi RF & MICROWAVE TRANSISTORS 800/900 MHz BASE STATION APPLICATIONS 860 - 960 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING CLASS AB LINEAR OPERATION P out = 30 W MIN. WITH 7.5 dB GAIN
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SD1425
SD1425
7T2T237
DQ7G43S
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Untitled
Abstract: No abstract text available
Text: /=T SGS THOMSON ^ 7 / . H lMlLi gTMa>M(g§_ AM1011-400 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS . REFRACTORY/GOLD METALLIZATION • EMITTER SITE BALLASTED a 15:1 VSWR CAPABILITY • LOW THERMAL RESISTANCE . INPUT/OUTPUT MATCHING . OVERLAY GEOMETRY
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AM1011-400
AM1011-400
J135066F
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TIP2955T
Abstract: A4S2 TIP3055T T-23-Z
Text: DEVELOPMENT DATA T h is data sheet c o n ta in s advance in fo rm a t io n a nd TIP2955T sp e cific atio n s are su b ject t o cha nge w it h o u t notice. PHILIPS INTERNATIONAL SbE D • 711005b 0043bG4 2 2 5 H P H I N T -2 3 -Z 1 SILICON EPITAXIAL-BASE POWER TRANSISTOR
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TIP2955T
711005b
0043b04
T-23-Z
TIP3055T
T0-220.
711002h
T-33-21
TIP2955T
A4S2
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TIP2955T
Abstract: No abstract text available
Text: D E V ELO P M EN T DATA TIP2955T T h is data sheet contains advance information and specifications are subject to change w ithout notice. SbE D PHILIPS INTERNATIONAL • 711002b GG43bDM 22S H P H I N T-33-Z 1 SILICON EPITAXIAL-BASE POWER TRANSISTOR P-N-P transistor in a plastic envelope. With its n-p-n complement T IP 3 0 5 5 T they are primarily intended
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TIP2955T
711002b
GG43bDM
T-33-Z
711Dfl2b
343ba7
TIP2955T
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MPQ3762
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad M em ory Driver Transistor MPQ3762 nil m np rrn noi m m PNP Silicon Iv H J Lt a j PNP r v n r v n MAXIM UM RATING S 1 Rating Symbol Value Collector-Emitter Voltage v C EO -40 Vdc Collector-Base Voltage VCBO -40 Vdc
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MPQ3762
O-116
0CH32S4
MPQ3762
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ci 4093
Abstract: IC 4093 2n4091
Text: 2N4091 to 4093 J V N-CHANNEL FETS Silicon symmetrical n-channei depletion type junction field-effect transistors in T0-18 metal envelopes with the gate connected to the case. The transistors are intended for low power switching applications in industrial service.
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2N4091
T0-18
2N4091
2N4092
2N4093
2N4092
bbS3T31
ci 4093
IC 4093
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Untitled
Abstract: No abstract text available
Text: SILICON MONOLITHIC TD6347F BIPO LAR DIGITAL INTEGRATED CIRCUIT CONVENTIONAL TIMER The TD6347F is an autom otive l2L monolithic timer. It is a long-term tim er superior in voltage and tem perature characteristics. It produces an NPN transistor opencollector output.
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TD6347F
TD6347F
250mA/30V
50//A
15-minute
165kO
56-second
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bsx63
Abstract: BSX62
Text: 1. • bb-53131 0 D 2 ? m M 712 ■ APX P h ilip s S e m ic o n d u c to rs Data sheet status Preliminary specification date of issue June 1992 BSX62-10, -16/BSX63-10, -16 Silicon planar epitaxial transistors N ANER PHILIPS/DISCRETE bTE D QUICK REFERENCE DATA
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bb-53131
BSX62-10,
-16/BSX63-10,
BSX62
BSX63
BSX62-10
BSX63-10
BSX62-16
BSX63-16
BSX62.
bsx63
BSX62
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ci 4093
Abstract: IC 4093 2N4091 2N4093 IC 4093 data 4093 4093 N 2N4092
Text: 2N4091 to 4 0 9 3 J V _ N-CHANNEL FETS Silicon symmetrical n-channei depletion type junction field-effect transistors in T 0-18 metal envelopes with the gate connected to the case. The transistors are intended for low power switching applications
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2N4091
T0-18
2N4092
2N4093
Z60923
003Sflbl
ci 4093
IC 4093
2N4093
IC 4093 data
4093
4093 N
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