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    T3909 Search Results

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    T3909 Price and Stock

    Analog Devices Inc LT3909EDD-TRPBF

    IC LED DRVR RGLTR PWM 50MA 12DFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LT3909EDD-TRPBF Digi-Reel 2,355 1
    • 1 $9.05
    • 10 $6.249
    • 100 $4.7178
    • 1000 $3.88904
    • 10000 $3.88904
    Buy Now
    LT3909EDD-TRPBF Cut Tape 2,355 1
    • 1 $9.05
    • 10 $6.249
    • 100 $4.7178
    • 1000 $3.88904
    • 10000 $3.88904
    Buy Now

    Analog Devices Inc LT3909EMSE-PBF

    IC LED DRV RGLTR PWM 50MA 12MSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LT3909EMSE-PBF Tube 257 1
    • 1 $9.05
    • 10 $6.249
    • 100 $4.7178
    • 1000 $3.88904
    • 10000 $3.775
    Buy Now

    Analog Devices Inc LT3909IMSE-PBF

    IC LED DRV RGLTR PWM 50MA 12MSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LT3909IMSE-PBF Tube 202 1
    • 1 $9.71
    • 10 $6.733
    • 100 $5.1079
    • 1000 $4.22856
    • 10000 $4.22856
    Buy Now

    Analog Devices Inc LT3909IDD-PBF

    IC LED DRVR RGLTR PWM 50MA 12DFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LT3909IDD-PBF Tube 35 1
    • 1 $9.71
    • 10 $6.733
    • 100 $5.1079
    • 1000 $4.22856
    • 10000 $4.22856
    Buy Now

    Analog Devices Inc LT3909EDD-PBF

    IC LED DRVR RGLTR PWM 50MA 12DFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LT3909EDD-PBF Tube 28 1
    • 1 $9.05
    • 10 $6.249
    • 100 $4.7178
    • 1000 $3.88904
    • 10000 $3.775
    Buy Now

    T3909 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    T3909 Semicon Components 30A Iout, 50V Vrrm Fast Recovery Rectifier Scan PDF
    T3-9.09-0.25% Electro Technik Resistor: Thick Film: 9.09: 0.25%: 3: 100: RDL Original PDF
    T3-9.09-0.5% Electro Technik Resistor: Thick Film: 9.09: 0.5%: 3: 100: RDL Original PDF
    T3-9.09K-0.25% Electro Technik Resistor: Thick Film: 9.09K: 0.25%: 3: 100: RDL Original PDF
    T3-9.09K-0.5% Electro Technik Resistor: Thick Film: 9.09K: 0.5%: 3: 100: RDL Original PDF
    T3909R Semicon Components 30A Iout, 50V Vrrm Fast Recovery Rectifier Scan PDF

    T3909 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: T3909 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current30 V(RRM)(V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev.Rec. Time200n @I(F) (A) (Test Condition)1 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.4 @I(FM) (A) (Test Condition)30


    Original
    PDF T3909 Current30 Voltage50 Time200n Current80u

    bgjg

    Abstract: transistor T philips 2322 733 BLF542 UFU370 3a0c 2222 030 capacitor philips philips potentiometer 43t transistor 3909
    Text: Philips Semiconductors_ Product specification UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • T " 3 <î?~0 cÎBLF542 5tiE D • 711DflSb 0D43TS4 5T3 ■ PHIN PIN CONFIGURATION High power gain Easy power control


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    PDF -0ciBLF542 0D43TS4 OT171 PINNING-SOT171 MBA931 MRA971 bgjg transistor T philips 2322 733 BLF542 UFU370 3a0c 2222 030 capacitor philips philips potentiometer 43t transistor 3909

    DH47

    Abstract: BUK571 BUK571-100A BUK571-100B buk541-100 K571
    Text: Philips Components D ata sheet status Prelim inary specification date of issue M arch 1991 R eplaces B U K 54 1-1 00A /B BUK571-100A/B PowerMOS transistor Logic level FET SbE D PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power


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    PDF BUK541-100A/B -SOT186A BUK571-100A/B DH47 BUK571 BUK571-100A BUK571-100B buk541-100 K571

    D0447

    Abstract: K572 00M4 Scans-00501 BUK572 12VBS
    Text: PHILIPS 5bE INTERNATIONAL D • 711002b 00M4704 DT3 ■ Philips Components_ Datasheet status Preliminary specification date of issue March 1991 Replaces BUK542-60A/B GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack


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    PDF BUK542-60A/B 711002b 00M4704 K572-60A/B PINNING-SOT186A BUK572 D0447 K572 00M4 Scans-00501 12VBS

    BUK573

    Abstract: BUK573-100A BUK573-100B
    Text: Philips C om ponents Data sheet status P re lim in a ry s p e c ific a tio n date of issue March 1991 R e p la c e s B U K 5 4 3 -1 0 0 A /B PHILIPS BUK573-100A/B PowerMOS transistor Logic level FET INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode


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    PDF BUK543-100A/B PINNING-SOT186A BUK573-1OOA/B 711002b BUK573 -100A BUK573-100A BUK573-100B

    k 246 transistor fet

    Abstract: 100-P BUK571 BUK571-60A BUK571-60B K571 1e43
    Text: PHILIPS INTERNATIONAL 5fc,E D Philips Components • 711Dfi2b 324 ■ PHIN Data sheet B status Preliminary specification date of issue March 1991 Replaces BUK541-60A/B GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack


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    PDF BUK541-60A/B BUK571-60A/B BUK571 k 246 transistor fet 100-P BUK571-60A BUK571-60B K571 1e43

    TTPC

    Abstract: BUK474-500B rm3 transistor BUK474
    Text: Philips Components Data sheet status Preliminary specification date of issue March 1991 INTERNATIONAL N -channel en han cem en t m ode field-effect pow er transistor in a plastic full-pack envelope. T h e device is intended for use in Switched M ode P ow er Supplies


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    PDF BUK474-500B 7110fl2b -SOT186A 711Dfl2b 0D44b23 TTPC BUK474-500B rm3 transistor BUK474

    D4MB

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL Data sheet status Preliminary specification date of issue March 1991 Sfc.E D • 711Qfl2b □ D4 Mb bti 17T « P H I N BUK 476-1000A/B PowerMOS transistor Replaces BUK446-1000A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


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    PDF 711Qfl2b 76-1000A/B BUK446-1000A/B BUK476 -1000A -1000B -SOT186A T-39-09 BUK476-1000A/B 7110fi2b D4MB

    rm3 transistor

    Abstract: BUK478
    Text: Philips Com ponents Data sheet status Preliminary specification date of issue March 1991 BUK 476-800A/B PowerMOS transistor Replaces BUK446-800A/B PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.


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    PDF 76-800A/B BUK446-800A/B 7110flSb -800A -800B BUK476 BUK476-800A/B 7110f rm3 transistor BUK478

    LP2S

    Abstract: BUK545-50A 40608G
    Text: - r - 3 Philips Components Data sheet status Preliminary specification date of issue March 1991 Replaces BUK545-50A/B BUK575-60A/B PowerMOS transistor Logic level FET SbE » PH IL IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode


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    PDF BUK575-60A/B BUK545-50A/B 711Dfl2b DG44724 BUK575 LP2S BUK545-50A 40608G

    2N6794

    Abstract: No abstract text available
    Text: SEMELAB LTD 37E D • Û1331Ô7 GOODBll fl J AN 0 5 1988 <y\ 1 SEMELAB 2N 6793 2N 6794 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm I 1 ìi APPLICATIONS T • FAST SWITCHING 8.5 max. 1 • MOTOR CONTROLS k - 5 .H • POWER SUPPLIES


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    PDF 2N6793 2N6794 2N6794

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHIL I P S / D I S CR E T E 5SE D fc.b53^31 DDEOSTO 4 PowerMOS transistor Logic Level FET BUK545-50A BUK545-50B r-3 i- o i GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    PDF BUK545-50A BUK545-50B BUK545

    NDS 40-20

    Abstract: NDS 40-30 BUK442 BUK442-50A BUK442-50B 00E0333
    Text: N AMER P H I L I P S / D I S C R E T E ESE D • ^53131 0020330 0 ■ P o w erM O S tra n s isto r B U K 442-50A B U K 442-50B T - 3 < ? - o <7 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.


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    PDF BUK442-50A BUK442-50B BUK442 NDS 40-20 NDS 40-30 BUK442-50B 00E0333

    DD 127 D TRANSISTOR

    Abstract: BUK443-50B BUK443 BUK443-50A TRANSISTOR K 135 J 50
    Text: N AMER PHIL IP S/D ISCRETE 2SE D ^53^31 G0E0345 2 PowerMOS transistor BUK443-50A BUK443-50B T GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


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    PDF G0E0345 BUK443-50A BUK443-50B BUK443 ID/100 DD 127 D TRANSISTOR BUK443-50B TRANSISTOR K 135 J 50

    k54160a

    Abstract: BUK541 BUK541-60A BUK541-60B k541 TRANSISTOR k541
    Text: Philips Components Data sheet status Prelim inary specification date of issue March 1991 B U K 5 4 1 - 6 0 A /B PowerMOS transistor Logic level FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent m ode logic level field-effect power transistor in a plastic full-pack


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    PDF -SOT186 K541-60A/B 711DflEb BUK541 K541-60A/B k54160a BUK541-60A BUK541-60B k541 TRANSISTOR k541

    BUK545-50A

    Abstract: BUK545 BUK545-50B
    Text: N AMER PH IL IP S/ DISCR ET E 5SE D fc>h53T31 DDEOSTQ 4 PowerMOS transistor Logic Level FET BUK545-50A BUK545-50B r -3 7 -,3 < 7 GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    PDF h53T31 BUK545-50A BUK545-50B BUK545 ID/100

    buk539

    Abstract: BUK539-60 539-60A BUK539-60A Philips BUK 100
    Text: T ï -Z > 9 -Æ Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 BUK539-60A PowerMOS transìstor Logic level FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.


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    PDF 39-60A T-39-09 BUK539-60A 711DSSb 004Mb7fl buk539 BUK539-60 539-60A Philips BUK 100

    t3901

    Abstract: No abstract text available
    Text: *T03 CASE RECTIFIERS DUAL AND SINGLE CHIP l0 RATINGS TO 30.0 AMPERES (HIGH SPEED) FEATURES: • Hermetic Seal • High Temperature Operation • Metallurgical^ Bonded DESCRIPTION This is a series of general purpose medium current rec­ tifiers with average forward current ratings of up to 30


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    PDF T3889, T3899, T3909 SR710 SR710F t3901

    T3910

    Abstract: No abstract text available
    Text: *T03 CASE RECTIFIERS DUAL AND SINGLE CHIP l0 RATINGS TO 30.0 AMPERES (HIGH SPEED) FEATURES: DESCRIPTION • Hermetic Seal • High Temperature Operation • Metallurgical^ Bonded This is a series of general purpose medium current rec­ tifiers with average forward current ratings of up to 30


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    PDF T3889, T3899, T3909 SR710 SR710F A-30V T3910

    SFN106B9

    Abstract: DS0026 IRFF121 3909
    Text: b l D E^ f lf fl3bfifciD5 l3 t .a k 0 5 bl ‘ DE •SOLITRÔN DEVICES INC B o l i t r D E V I C E S , o n T I T | . s f n T T- 3 9 - 0 9 i o 6 B 9 IIM C . POWER MOS DEVICE 60V/6A N Channel, TO-39 Package, IRFF121 Equivalent The new Solitron Power MOS technology


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    PDF T-39-09 SFN106B9 IRFF121 HP214A /IF/450V SFN106B9 DS0026 3909

    sfnf105

    Abstract: No abstract text available
    Text: 8368 6 0 2 S O L I T R O N D E V I C E S SFNF105D INC 70C 0 2002 SWITCH MOS 7D PACKAGE TO-39 TJ oper T „ stg ^SS r d s (on) Voltage, Gate-to-Source Power Dissipation @ Tc»25°C Junction Operating Temperature 16 -55 to +150 Storage Temperature -55 to +150


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    PDF T-39-09 SFNF105D 5M6-24UNF-2A P06fTKM eA03AT sfnf105

    Untitled

    Abstract: No abstract text available
    Text: Philips Components Data sheet status Prelim inary specification date of issue March 1991 R e p la ce s B U K 54 5-1 00 A /B PHILIPS N -channel en han cem en t m ode logic level field-effect power transistor in a plastic full-pack envelope. T h e device is intended for use in


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    PDF BUK575-100A/B 7110fl2fci 004472T 711Gfl2b

    BUK475-400B

    Abstract: LD25C BUK475 3909
    Text: Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 PHILIPS BUK 475-400B PowerMOS transistor INTERNATIONAL SbE D i- 1 GENERAL DESCRIPTION N-channel enhancem ent m ode


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    PDF OT186A 475-400B 711002b 0d44b4" BUK475-400B LD25C BUK475 3909

    k446

    Abstract: transistor k446 BUK446 BUK446-1000A BUK446-1000B
    Text: P H IL IP S INTERNATIONAL Philips Components Data sheet status P ro d u c t s p e c ific a tio n date of issue March 1991 GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    PDF 711DflEb K446-10OOA/B -SOT186 BUK446 -1000A -1000B k446 transistor k446 BUK446-1000A BUK446-1000B