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    T5 8G Search Results

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    T5 8G Price and Stock

    Nexperia 74AUP1T58GW,125

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    DigiKey 74AUP1T58GW,125 Cut Tape 407 1
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    74AUP1T58GW,125 Digi-Reel 407 1
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    74AUP1T58GW,125 Reel 3,000
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    Avnet Americas 74AUP1T58GW,125 Reel 6 Weeks 9,000
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    Newark 74AUP1T58GW,125 Cut Tape 604 5
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    Rochester Electronics 74AUP1T58GW,125 211,462 1
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    TTI 74AUP1T58GW,125 Reel 9,000
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    TME 74AUP1T58GW,125 1
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    Avnet Asia 74AUP1T58GW,125 6 Weeks 9,000
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    Avnet Silica 74AUP1T58GW,125 8 Weeks 3,000
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    EBV Elektronik 74AUP1T58GW,125 8 Weeks 3,000
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    Nexperia 74AUP1T58GM,115

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    DigiKey 74AUP1T58GM,115 Cut Tape 155 1
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    74AUP1T58GM,115 Digi-Reel 155 1
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    74AUP1T58GM,115 Reel 5,000
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    Avnet Americas 74AUP1T58GM,115 Reel 6 Weeks 10,000
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    Rochester Electronics 74AUP1T58GM,115 100,000 1
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    TTI 74AUP1T58GM,115 Reel 10,000
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    Avnet Silica 74AUP1T58GM,115 8 Weeks 5,000
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    Nexperia 74AUP1T58GS,132

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    DigiKey 74AUP1T58GS,132 Reel 5,000
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    Avnet Americas 74AUP1T58GS,132 Reel 6 Weeks 10,000
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    Rochester Electronics 74AUP1T58GS,132 88,200 1
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    TTI 74AUP1T58GS,132 Reel 10,000
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    Avnet Silica 74AUP1T58GS,132 8 Weeks 5,000
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    EBV Elektronik 74AUP1T58GS,132 8 Weeks 5,000
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    Rochester Electronics LLC 74AUP1T58GS,132

    NEXPERIA 74AUP1T58GS - LOW POWE
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    DigiKey 74AUP1T58GS,132 Bulk 2,455
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    Rochester Electronics LLC 74AUP1T58GW,125

    NEXPERIA 74AUP1T58GW - LOGIC CIR
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    DigiKey 74AUP1T58GW,125 Bulk 3,531
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    T5 8G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Inductive proximity switches NCB1,5-8GM25-N0 Comfort series 1.5 mm embeddable 16 13 LED 25 4 M8x1 0102 NAMUR NC 1,5 mm embeddable 0 . 1,215 mm 0,22 0,19 0,65 8V 0 . 5000 Hz 1 . 10 typ. 3 % Protected against reverse polarity yes www.pepperl-fuchs.com


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    5-8GM25-N0 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 8G bits DDR3L SDRAM, DDP EDJ8232E5MB 256M words  32 bits Specifications Features • Density: 8G bits  Organization  32M words  32 bits  8 banks  Package  136-ball FBGA  DDP: 2 pieces of 4G bits chip sealed in one package


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    EDJ8232E5MB 136-ball 1600Mbps/1333Mbps M01E1007 E1813E40 PDF

    ELPIDA DDR3

    Abstract: No abstract text available
    Text: DATA SHEET 8G bits DDR3 SDRAM, DDP EDJ8232B5MB 256M words  32 bits Specifications Features • Density: 8G bits  Organization  32M words  32 bits  8 banks  Package  136-ball FBGA  DDP: 2 pieces of 4G bits chip sealed in one package


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    EDJ8232B5MB 136-ball 1600Mbps/1333Mbps M01E1007 E1825E30 ELPIDA DDR3 PDF

    EDJ8216B5MB

    Abstract: E1824E
    Text: PRELIMINARY DATA SHEET 8G bits DDR3L SDRAM, DDP EDJ8216E5MB 512M words x 16 bits Specifications Features • Density: 8G bits • Organization  64M words × 16 bits × 8 banks • Package  96-ball FBGA  DDP: 2 pieces of 4G bits chip sealed in one


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    EDJ8216E5MB 96-ball 1600Mbps/1333Mbps M01E1007 E1826E20 EDJ8216B5MB E1824E PDF

    136-BALL

    Abstract: EDJ8232
    Text: PRELIMINARY DATA SHEET 8G bits DDR3L SDRAM, DDP EDJ8232E5MB 256M words x 32 bits Specifications Features • Density: 8G bits • Organization  32M words × 32 bits × 8 banks • Package  136-ball FBGA  DDP: 2 pieces of 4G bits chip sealed in one


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    EDJ8232E5MB 136-ball 1600Mbps/1333Mbps M01E1007 E1813E30 EDJ8232 PDF

    EDJ8216B5MB

    Abstract: E1824E DDR3 DIMM 8G
    Text: DATA SHEET 8G bits DDR3L SDRAM, DDP EDJ8216E5MB 512M words  16 bits Specifications Features • Density: 8G bits  Organization  64M words  16 bits  8 banks  Package  96-ball FBGA  DDP: 2 pieces of 4G bits chip sealed in one package


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    EDJ8216E5MB 96-ball 1600Mbps/1333Mbps M01E1007 E1826E30 EDJ8216B5MB E1824E DDR3 DIMM 8G PDF

    EDJ8232B5MB-DJ-F

    Abstract: ELPIDA DDR3 User
    Text: PRELIMINARY DATA SHEET 8G bits DDR3 SDRAM, DDP EDJ8232B5MB 256M words x 32 bits Specifications Features • Density: 8G bits • Organization  32M words × 32 bits × 8 banks • Package  136-ball FBGA  DDP: 2 pieces of 4G bits chip sealed in one


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    EDJ8232B5MB 136-ball 1600Mbps/1333Mbps M01E1007 E1825E21 EDJ8232B5MB-DJ-F ELPIDA DDR3 User PDF

    Matsushita relay 12V pc

    Abstract: ARJ2003 ARJ2012 ARJ2024 ARJ204H ARJ20A03 ARJ20A03Z ARJ2203 ARJ2212 ARJ2224
    Text: rj.fm 2 y [ W Q O O P N X P P œ @ ˛ j œ @ O P P S S “ RJ ARJ2 SMD RELAYS WITH 8GHz CAPABILITIES RJ-RELAYS FEATURES 9.00 .354 14.0 .551 • Excellent high frequency characteristics (50Ω, at 5GHz) V.S.W.R.: Max. 1.25 Insertion loss: Max. 0.5dB Isolation: Min. 35dB


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    PDF

    HF relay high current rating

    Abstract: rjrelays R-4737 RJ Relay ARJ2003 ARJ2012 ARJ2024 ARJ204H ARJ20A03 ARJ2203
    Text: rj.fm 2 y [ W Q O O P N X P P œ @ ˛ j œ @ O P P S S “ RJ ARJ2 SMD RELAYS WITH 8GHz CAPABILITIES RJ-RELAYS FEATURES 9.00 .354 14.0 .551 • Excellent high frequency characteristics (50Ω, at 5GHz) V.S.W.R.: Max. 1.25 Insertion loss: Max. 0.5dB Isolation: Min. 35dB


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    PDF

    em638325ts-6

    Abstract: No abstract text available
    Text: EtronTech EM638325 2M x 32 Synchronous DRAM SDRAM Preliminary (Rev 1.4 October/2005) Pin Assignment (Top View) Features • • • • • Clock rate: 200/183/166/143/125/100 MHz Fully synchronous operation Internal pipelined architecture Four internal banks (512K x 32bit x 4bank)


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    EM638325 October/2005) 32bit cycles/64ms em638325ts-6 PDF

    tl741

    Abstract: VEL-4P32-RH-TP sodium vapor lamp Magnetek ballast F32T8 transistor ballast 1000W VEL-3P32-RH-TP 13w cfl circuit D835 transistor PHILIPS T8 MAGNETIC BALLAST
    Text: Manufacturers’ Cross Reference Guide These tables are intended only as guides and may represent another lamp/ballast company's most similar product rather than an identical match. Individual manufacturer's performance values should be consulted. For a complete cross reference guide please consult our electronic


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    10S11N 10S11N/F 15CAC/F-CD/2-12 --15S14/GR/CL 15T10 20T61/2DC/F 20T61/2/F 25CAC --25CAC-CD/2-120 25G181/2/W tl741 VEL-4P32-RH-TP sodium vapor lamp Magnetek ballast F32T8 transistor ballast 1000W VEL-3P32-RH-TP 13w cfl circuit D835 transistor PHILIPS T8 MAGNETIC BALLAST PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering information DC-DC Converters PCB Mount type SUTW3 SUT ① W ② 3 ③ 12 ④ 12 ⑤ -O ⑥ 1Series name 2Dual output 3Output wattage 4Input voltage 5Output voltage 6Optional G :Capacitor between Input and Output is removed. R MODEL MAX OUTPUT WATTAGE[W]


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    SUTW30512 SUTW30515 SUTW31212 SUTW31215 SUTW32412 SUTW32415 SUTW34812 SUTW34815 SUTW31215 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering information DC-DC Converters PCB Mount type SUTS3 SUT ① S ② 3 ③ 12 ④ DC OUTPUT -O ⑥ 1Series name 2Single output 3Output wattage 4Input voltage 5Output voltage 6Optional G :Capacitor between Input and Output is removed. R MODEL MAX OUTPUT WATTAGE[W]


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    SUTS3053R3 SUTS30505 SUTS30512 SUTS30515 SUTS3123R3 SUTS31205 SUTS31212 SUTS31215 SUC/SUT-39 PDF

    Untitled

    Abstract: No abstract text available
    Text: PART NUMBER: ± 2g / 4g / 6g / 8g Tri-axis Digital Accelerometer Specifications KXUD9-2050 Rev. 1 Sep-2010 Product Description The KXUD9 is a tri-axis silicon micromachined accelerometer with a user selectable full-scale output range of ±2g, ±4g, ±6g or ±8g. The


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    KXUD9-2050 Sep-2010 PDF

    ELPIDA DDR2 SDRAM

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5104AJSE 128M words x 4 bits EDE5108AJSE (64M words × 8 bits) EDE5116AJSE (32M words × 16 bits) Specifications Features • Density: 512M bits • Organization ⎯ 32M words × 4 bits × 4 banks (EDE5104AJSE)


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    EDE5104AJSE EDE5108AJSE EDE5116AJSE EDE5104AJSE) EDE5108AJSE) EDE5116AJSE) 60-ball EDE5104/08AJSE) 84-ball ELPIDA DDR2 SDRAM PDF

    ba1a1g

    Abstract: T5 8g
    Text: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5108AHBG 64M words x 8 bits EDE5116AHBG (32M words × 16 bits) Features • Density: 512M bits • Organization  16M words × 8 bits × 4 banks (EDE5108AHBG)  8M words × 16 bits × 4 banks (EDE5116AHBG)


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    EDE5108AHBG EDE5116AHBG EDE5108AHBG) EDE5116AHBG) 60-ball 84-ball 800Mbps/667Mbps/533Mbps/400Mbps ba1a1g T5 8g PDF

    EDE1108AFBG

    Abstract: EDE1108AFBG-8E-F DDR2-667 DDR2-800 ELPIDA DDR2 SDRAM
    Text: PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1108AFBG 128M words x 8 bits Specifications Features • Density: 1G bits • Organization  16M words × 8 bits × 8 banks • Package  60-ball FBGA  Lead-free (RoHS compliant) and Halogen-free • Power supply: VDD, VDDQ = 1.8V ± 0.1V


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    EDE1108AFBG 60-ball 800Mbps/667Mbps M01E0706 E1430E20 EDE1108AFBG EDE1108AFBG-8E-F DDR2-667 DDR2-800 ELPIDA DDR2 SDRAM PDF

    EDE5116AJBG-6E-E

    Abstract: EDE5116AJBG
    Text: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5108AJBG 64M words x 8 bits EDE5116AJBG (32M words × 16 bits) Specifications Features • Density: 512M bits • Organization ⎯ 16M words × 8 bits × 4 banks (EDE5108AJBG) ⎯ 8M words × 16 bits × 4 banks (EDE5116AJBG)


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    EDE5108AJBG EDE5116AJBG EDE5108AJBG) EDE5116AJBG) 60-ball 84-ball 800Mbps/667Mbps EDE5116AJBG-6E-E EDE5116AJBG PDF

    EDE5108AHBG

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5108AHBG 64M words x 8 bits EDE5116AHBG (32M words × 16 bits) Specifications Features • Density: 512M bits • Organization ⎯ 16M words × 8 bits × 4 banks (EDE5108AHBG) ⎯ 8M words × 16 bits × 4 banks (EDE5116AHBG)


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    EDE5108AHBG EDE5116AHBG EDE5108AHBG) EDE5116AHBG) 60-ball 84-ball 800Mbps/667Mbps/533Mbps/400Mbps EDE5108AHBG PDF

    EDE5116AHSE

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5108AHSE 64M words x 8 bits EDE5116AHSE (32M words × 16 bits) Specifications Features • Density: 512M bits • Organization ⎯ 16M words × 8 bits × 4 banks (EDE5108AHSE) ⎯ 8M words × 16 bits × 4 banks (EDE5116AHSE)


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    EDE5108AHSE EDE5116AHSE EDE5108AHSE) EDE5116AHSE) 60-ball 84-ball 800Mbps/667Mbps/533Mbps/400Mbps EDE5116AHSE PDF

    DIN 7964

    Abstract: SLFLD25-1GBJI
    Text: SLFLD25-xxxJ I 128 MB to 8 GB 2.5-Inch IDE Flash Drives GENERAL DESCRIPTION The SimpleTech SLFLD25-xxxJ(I) are solid-state flash IDE drives with capacities of 128MB to 8GB and in a standard 2.5inch form factor. The IDE drive consists of an IDE controller


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    SLFLD25-xxxJ 128MB DIN 7964 SLFLD25-1GBJI PDF

    315-13-120-41-001

    Abstract: 316-93-132-41-006 310-93-164-41-001 3160-X
    Text: SINGLE-IN-LINE SOCKETS Solder Tail Single Row BrRiEElîDIB Series 310, 311 315, 316 • Series 31X single row strip sockets may be cut to any length. 1 ö !ö T5!öl .100 • Various solder tails available: standard length, long for multi­ layer boards, very low and ultra


    OCR Scan
    ti771 0GD072 315-13-120-41-001 316-93-132-41-006 310-93-164-41-001 3160-X PDF

    1N3220

    Abstract: No abstract text available
    Text: ZE TE X IN C T5 D 95D 0 6 0 5 1 8-bit ¡xP compatible A-D converter ZN447 ZN449 D ZN448 FEATURES DESCRIPTION • Easy Interfacing to microprocessor, or operates as a 'stand-alone' converter • Fast: 9/xs conversion tim e guaranteed • Choice o f linearity: 0.3LS B - Z N 4 4 7 ,


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    ZN447 ZN449 ZN448 1N3220 PDF

    S3086

    Abstract: No abstract text available
    Text: DRAW ING MADE T H IS @ IN D R A W IN G C O P Y R IG H T RESERVED. T H IR D IS 1965 AMP ANG LE P R O JE C T IO N RELEASEO U N P U B L IS H E D . SY AMP FO R P U S LIC A T IO N IN C O R P O R A T E D , H A R R IS B U R G , P R O D U C T5 M AY B E C O V E R E D


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    s/30/86 411ATENTS i470-i5 tBJ28lWe J2O0C21Ã S3086 PDF