T60 N02R
Abstract: T60N02R MOSFEt t60 n02r 60n02r T 60 N02R n02r NTD60N02RG 60N02 NTD60N02RT4G NTD60N02R
Text: NTD60N02R Power MOSFET 62 A, 24 V, N−Channel, DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD60N02R
NTD60N02RG
NTD60N02RT4
NTD60N02RT4G
NTD60N02R-1
NTD60N02R-1G
BRD8011/D.
T60 N02R
T60N02R
MOSFEt t60 n02r
60n02r
T 60 N02R
n02r
60N02
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T60 N02R
Abstract: T60N02R 60N02R 60N02 n02r
Text: NTD60N02R Power MOSFET 60 Amps, 24 Volts N−Channel DPAK Features Drain−to−Source Voltage Symbol Value 8.4 mW @ 10 V 60 A 1 VGS ±20 Vdc Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current Continuous @ TC = 25°C, Chip
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NTD60N02R
NTD60N02R/D
T60 N02R
T60N02R
60N02R
60N02
n02r
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T60N02R
Abstract: No abstract text available
Text: NTD60N02R Power MOSFET 60 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD60N02R
NTD60N02R/D
T60N02R
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T60 N02R
Abstract: T60N02R MOSFEt t60 n02r T 60 N02R 60N02R 60N02 369D N02R NTD60N02R NTD60N02RT4
Text: NTD60N02R Power MOSFET 60 Amps, 24 Volts N−Channel DPAK Features Drain−to−Source Voltage Symbol Value 8.0 mW @ 4.5 V 60 A 1 VGS ±20 Vdc Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current Continuous @ TC = 25°C, Chip
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NTD60N02R
NTD60N02R/D
T60 N02R
T60N02R
MOSFEt t60 n02r
T 60 N02R
60N02R
60N02
369D
N02R
NTD60N02R
NTD60N02RT4
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t60n02r
Abstract: T60 N02R 60N02R T 60 N02R 60N02
Text: NTD60N02R Power MOSFET 60 Amps, 24 Volts N−Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD60N02R
NTD60N02R/D
t60n02r
T60 N02R
60N02R
T 60 N02R
60N02
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T60 N02RG
Abstract: T60N02R T60N02 T-60
Text: NTD60N02R Power MOSFET 62 A, 25 V, N−Channel, DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD60N02R
NTD60N02R/D
T60 N02RG
T60N02R
T60N02
T-60
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T60N02R
Abstract: T60 N02rg T60N02RG t60n02 N02rg T60-N02RG t60.n02r n02r n02rg t60 NTD60N02R
Text: NTD60N02R Power MOSFET 62 A, 25 V, N−Channel, DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD60N02R
NTD60N02R/D
T60N02R
T60 N02rg
T60N02RG
t60n02
N02rg
T60-N02RG
t60.n02r
n02r
n02rg t60
NTD60N02R
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60N02
Abstract: t60 n02r T60N02R T 60 N02R 369D N02R NTD60N02R NTD60N02RG NTD60N02RT4 NTD60N02RT4G
Text: NTD60N02R Power MOSFET 62 A, 25 V, N−Channel, DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD60N02R
NTD60N02R/D
60N02
t60 n02r
T60N02R
T 60 N02R
369D
N02R
NTD60N02R
NTD60N02RG
NTD60N02RT4
NTD60N02RT4G
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NTD60N02R
Abstract: NTD60N02RG T60 N02R NTD60N02RT4G 369D N02R NTD60N02RT4 T 60 N02R
Text: NTD60N02R Power MOSFET 62 A, 24 V, N−Channel, DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD60N02R
NTD60N02R/D
NTD60N02R
NTD60N02RG
T60 N02R
NTD60N02RT4G
369D
N02R
NTD60N02RT4
T 60 N02R
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n02r
Abstract: T60 N02R dpak DIODE 948 T60N02R 60N02R 60N02 ntd60n02rg 100 amp mosfet NTD60N02R T 948
Text: NTD60N02R Power MOSFET 62 Amps, 24 Volts N−Channel DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD60N02R
NTD60N02R/D
n02r
T60 N02R
dpak DIODE 948
T60N02R
60N02R
60N02
ntd60n02rg
100 amp mosfet
NTD60N02R
T 948
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60N02
Abstract: t60 n02r NTD60N02RG N02R T60N02R 369D NTD60N02R NTD60N02RT4 NTD60N02RT4G T 60 N02R
Text: NTD60N02R Power MOSFET 62 A, 24 V, N−Channel, DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD60N02R
NTD60N02R/D
60N02
t60 n02r
NTD60N02RG
N02R
T60N02R
369D
NTD60N02R
NTD60N02RT4
NTD60N02RT4G
T 60 N02R
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