Untitled
Abstract: No abstract text available
Text: HVCA HV-T77 20kV 5mA HIGH VOLTAGE DIODES Outline Drawings : mm HV-T77 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 3.0 o 0.6 Features
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HV-T77
HV-T77
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Untitled
Abstract: No abstract text available
Text: HVGT HV-T77 20kV 5mA HIGH VOLTAGE DIODES Outline Drawings : mm HV-T77 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 3.0 o 0.6 Features
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HV-T77
HV-T77
DO-312
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Untitled
Abstract: No abstract text available
Text: SKNa 202 Stud Diode Avalanche Diode SKNa 202 8OP2Q:1 ?N2B@ S 677 $ O:&=1:5: %&'5+ K3/ 3(,1(5350 3.+/&,13(Q F:&= 2:1( 8 [D77 ]777 ]T77 ]677 ]D77 ]V77 ?N$8 S T77 $ O01(U CV7W >) S V7 XFQ @HI& T7T¥[D @HI& T7T¥]7 @HI& T7T¥]T @HI& T7T¥]6 @HI& T7T¥]D @HI& T7T¥]V
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OC77Q
7E66W
7E66NW
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MTZJ T-72 16B
Abstract: MTZJ18B T-77 T-72 diode MTZJ 15 T-72 MTZJ 7.5 B T-72 diode T-77 diode T-72 5.1B mtzj diode T77 MTZJ T-72 12B
Text: MTZJ30B Diodes Zener diode MTZJ30B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. φ0.4±0.1 3.6B T-72 29±1 2.7±0.3 T-72 29±1 φ1.8±0.2
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MTZJ30B
DO-34
30pcs
084nA
10pcs
MTZJ T-72 16B
MTZJ18B T-77
T-72 diode
MTZJ 15 T-72
MTZJ 7.5 B T-72
diode T-77
diode T-72
5.1B mtzj
diode T77
MTZJ T-72 12B
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1SS133 T77
Abstract: diode T-77 1SS133 1SS133 T-77 T-77 diode T77 t 77 do-34 rohm
Text: 1SS133 Diodes Switching diode 1SS133 zApplications High speed switching zExternal dimensions Unit : mm CATHODE BAND (YELLOW) φ0.40.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 291 2.70.3 291 φ1.80.2 ROHM : MSD JEDEC : DO-34 zConstruction
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1SS133
DO-34
1SS133 T77
diode T-77
1SS133
1SS133 T-77
T-77
diode T77
t 77
do-34 rohm
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MTZJ18B
Abstract: MTZJ18B T-77 diode T-77 MTZJ-9.1B T-77
Text: MTZJ18B Diodes Zener diode MTZJ18B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. φ0.4±0.1 3.6B T-72 29±1 2.7±0.3 T-72 29±1 φ1.8±0.2
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MTZJ18B
DO-34
MTZJ18B
MTZJ18B T-77
diode T-77
MTZJ-9.1B
T-77
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MTZJ-9.1B
Abstract: 9.1b diode MTZJ9.1B DIODE 24B T-77
Text: MTZJ9.1B Diodes Zener diode MTZJ9.1B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. φ0.4±0.1 3.6B T-72 29±1 2.7±0.3 T-72 29±1
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DO-34
MTZJ-9.1B
9.1b diode
MTZJ9.1B
DIODE 24B
T-77
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5.1B mtzj
Abstract: No abstract text available
Text: MTZJ9.1B Diodes Zener diode MTZJ9.1B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. ３． ６ Ｂ 2.7±0.3 29±1 29±1
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DO-34
5.1B mtzj
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Untitled
Abstract: No abstract text available
Text: MTZJ4.7B Diodes Zener diode MTZJ4.7B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. ３． ６ Ｂ 2.7±0.3 29±1 29±1
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DO-34
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Untitled
Abstract: No abstract text available
Text: MTZJ6.8B Diodes Zener diode MTZJ6.8B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. ３． ６ Ｂ 2.7±0.3 29±1 29±1
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DO-34
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Untitled
Abstract: No abstract text available
Text: MTZJ39B Diodes Zener diode MTZJ39B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. ３． ６ Ｂ 2.7±0.3 29±1 29±1 φ1.8±0.2
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MTZJ39B
DO-34
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diode T-77
Abstract: T-72 diode 5.6B ZENER MTZJ T-72 16B 5.6B DIODE 24B ZENER DIODE 9.1B 7.5B 35 DIODE MTZJ-8.2B 36b 75
Text: MTZJ36B Diodes Zener diode MTZJ36B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. φ0.4±0.1 3.6B T-72 29±1 2.7±0.3 T-72 29±1 φ1.8±0.2
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MTZJ36B
DO-34
30pcs
082nA
10pcs
diode T-77
T-72 diode
5.6B ZENER
MTZJ T-72 16B
5.6B
DIODE 24B
ZENER DIODE 9.1B
7.5B 35
DIODE MTZJ-8.2B
36b 75
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T72 diode of 45 kv
Abstract: diode T-77 1SS244 diode T77 77-1 T-77 T-72 diode
Text: 1SS244 Diodes Switching diode 1SS244 zApplications High voltage switching General purpose rectification zExternal dimensions Unit : mm CATHODE BAND (BLACK) TYPE NO. (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 2 4 4 2.7±0.3
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1SS244
DO-34
T72 diode of 45 kv
diode T-77
1SS244
diode T77
77-1
T-77
T-72 diode
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5.6B ZENER
Abstract: MTZJ12B T-77
Text: MTZJ12B Diodes Zener diode MTZJ12B zApplications Constant voltage control z Dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. φ0.4±0.1 3.6B T-72 29±1 2.7±0.3 T-72 29±1 φ1.8±0.2
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MTZJ12B
DO-34
5.6B ZENER
MTZJ12B
T-77
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MTZJ36B
Abstract: T-77 diode T-77 MTZJ 15 T-72
Text: MTZJ36B Diodes Zener diode MTZJ36B zApplications Constant voltage control z Dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. φ0.4±0.1 3.6B T-72 29±1 2.7±0.3 T-72 29±1 φ1.8±0.2
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MTZJ36B
DO-34
MTZJ36B
T-77
diode T-77
MTZJ 15 T-72
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MTZJ11B
Abstract: T-77
Text: MTZJ11B Diodes Zener diode MTZJ11B zApplications Constant voltage control z Dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. φ0.4±0.1 3.6B T-72 29±1 2.7±0.3 T-72 29±1 φ1.8±0.2
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MTZJ11B
DO-34
MTZJ11B
T-77
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diode T-77
Abstract: RB721Q-40 T-77 do-34 rohm
Text: RB721Q-40 Diodes Schottky barrier diode RB721Q-40 zApplications Low current rectification zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) Low VF, Low IR 3) High reliability S 2
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RB721Q-40
DO-34
diode T-77
RB721Q-40
T-77
do-34 rohm
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IN4002A
Abstract: IN4002 1N4002A
Text: 7fi2ûcn cl 000=1015 T77 • RHM ROHm Specilicanon Page Products Type T of 1N4002A, Glass Sealed R ectifying Diode i Glass Sealed R ectifying Diode 1. PRODUCTS S ilic o n d iffu sed ju n ctio n 1H4002A 2. TYPE 3. APPLICATION General r e c tif ic a tio n
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1N4002A;
1N4002A
D0-41)
RR4002
IN4002A
IN4002
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VS248X
Abstract: VS048X VS648X VS248 VS148X VS448X GQG1302 VS1048X VS848X
Text: MICROSEMI CORP/ MICRO EBR SbE D • bllS'iü? GG01301 T77 ■ H 2L MICRQ QUALITY / SEMICONDUCTOR INC 2 Amp Fast Recovery Time Epoxy Bridge Rectifiers 200 Nanosecond Maximum Reverse Recovery 50V, 100V, 200V, 400V, 600V, 800V, and 1000V VRRM Ratings 35 Amps Peak One Half Cycle Surge Current
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VS248X
VS048X
VS148X
VS448X
VS648X
VS848X
VS1048X
GQG1302
T-23-05
VS248
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1212G
Abstract: No abstract text available
Text: • 4bflb5c?b 0001374 t77 M I X Y Rectifier Bridges, 3~ Rectifier Bridges, 3~ with fast Diodes and integrated soft-start Thyristor Type <s> T c = 8 5 °C E 72 873 M ►New VUC 25-16go2 VUC 25-14go2 VUC 25-12go2 1600 1400 1200 500 440 400 VUC 36-16go2 VUC 36-14go2
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25-16go2
25-14go2
25-12go2
36-16go2
36-14go2
36-12go2
75-12io1
36-16io1
36-12io1
75-16io1
1212G
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insta 53128
Abstract: ZENER 18- 2 5t fro 108 ssb squelch ECG370
Text: bbS312fl Ü003227 S ECG370A ¿ s*. AGC/SQUELCH AMPLIFIER . semiconductor 'T77-QS'0S 17 Ë D PHILIPS E C 6 INC ECG370 is a dire ct coupled m o n o lith ic am pli fier whose voltage gain is c o n trolled b y an external DC voltage. The device features: • Large Gain C ontrol Range
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bbS312fl
ECG370A
T77-QS
ECG370
VV01TAGE,
insta 53128
ZENER 18- 2 5t
fro 108
ssb squelch
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IRf 444 MOSFET
Abstract: DIODE Z32 irf9z34 IRF9Z30 irf9z34 mosfet IRF z34 MOSFET IRF high current p-channel P-channel power mosfet irf IRF9Z35 IRf 444
Text: SAMSUNG ELECTRONICS INC fc^E D • 7^4142 IRF9Z34/Z35 IRF9Z30/Z32 □ □ 1 2 2 Iìc T77 M S U G K P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds <on > Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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IRF9Z34/Z35
IRF9Z30/Z32
IRF9Z30
IRF9Z34
IRF9Z32
IRF9Z35
IRf 444 MOSFET
DIODE Z32
irf9z34 mosfet
IRF z34 MOSFET
IRF high current p-channel
P-channel power mosfet irf
IRf 444
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lh0070
Abstract: LH0071-1H lm1093 lh0071
Text: LH0070/LH0071 SñE D National bS G 1 1 2 H 0 D 7 4 3 CI3 T77 NATL S E M I C O N » INSC2 LINEAR ÆM Semiconductor ' F 5 S -C T 7 LH0070 Series Precision BCD Buffered Reference LH0071 Series Precision Binary Buffered Reference General Description them ideal choices as reference voltages in precision D to A
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LH0070/LH0071
LH0070
LH0071
TL/H/5550-2
TL/H/5550--
bSG1124
LH0071-1H
lm1093
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diode T-77
Abstract: diode T77 39 77 zener diode t77 5-1 MTZJ 7.5 B T-77 T 77 T-77 T 77 zener MTZJ SERIES ZENER DIODES T 77 -15
Text: Diodes Zener Diodes ROHM is the largest switching diode manufacturer in terms of volume. ROHM can deliver reliable diodes for various elec tronic industries all over the world. lz=5mA Zener voltage assures easy power saving design of electronic equipment.
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500mW)
1N5231B
1N5233B
1N5234B
1N5236B
5237B
1N5238B
1N5239B
1N5240B
1N5241B
diode T-77
diode T77
39 77 zener diode
t77 5-1
MTZJ 7.5 B T-77
T 77
T-77
T 77 zener
MTZJ SERIES ZENER DIODES
T 77 -15
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