T88-A150XSMD
Abstract: No abstract text available
Text: Surge Arrester 3-Electrode-Arrester T88-A150XSMD Ordering code: B88069X9840T302 DC spark-over voltage 1 2) 4) 150 ± 20 V % < 450 < 400 V V < 550 < 500 V V Nominal impulse discharge current wave 8/20 µs) 5) Single impulse discharge current (wave 8/20 µs) 5)
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T88-A150XSMD
B88069X9840T302
57845/VDE0845
T88-A150XSMD
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T88-A350XSMD
Abstract: No abstract text available
Text: Surge Arrester 3-Electrode-Arrester T88-A350XSMD Ordering code: B88069X8420T302 DC spark-over voltage 1 2) 4) 350 ± 20 V % < 750 < 600 V V < 900 < 800 V V Nominal impulse discharge current wave 8/20 µs) 5) Single impulse discharge current (wave 8/20 µs) 5)
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T88-A350XSMD
B88069X8420T302
57845/VDE0845
T88-A350XSMD
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B88069X8330T302
Abstract: T88-A90XSMD
Text: Surge Arrester 3-Electrode-Arrester T88-A90XSMD Ordering code: B88069X8330T302 DC spark-over voltage 1 2) 4) 90 ± 20 V % < 400 < 300 V V < 550 < 450 V V Nominal impulse discharge current wave 8/20 µs) 5) Single impulse discharge current (wave 8/20 µs) 5)
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T88-A90XSMD
B88069X8330T302
57845/VDE0845
B88069X8330T302
T88-A90XSMD
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T88-A230XSMD
Abstract: No abstract text available
Text: Surge Arrester 3-Electrode-Arrester T88-A230XSMD Ordering code: B88069X9920T302 DC spark-over voltage 1 2) 4) 230 ± 20 V % < 450 < 400 V V < 650 < 600 V V Nominal impulse discharge current wave 8/20 µs) 5) Single impulse discharge current (wave 8/20 µs) 5)
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T88-A230XSMD
B88069X9920T302
57845/VDE0845
T88-A230XSMD
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nec b1007
Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,
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NE68018
NE680
UPA801TC
UPA808TC
UPA821TC
UPA826TC
UPA861TD
UPA831TC
UPA862TD
UPA835TC
nec b1007
T79 code marking
C3206
marking s16
marking code C1H
qfn marking t88
C3H marking
NE02107
T79 marking
C3206G
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NE85633
Abstract: NE02133 NE68033 Marking R32 marking R33 NE68533 NE97833 NE68133 R24 marking NE94433
Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 33 +0.2 2.8 -0.3 2.9 ± 0.2 0.95 2 1.9 3 +0.10 0.4 -0.05 ALL LEADS 1 +0.2 1.5 -0.1 +0.10 0.65 -0.15 MARKING 1.1 to 1.4 0.8 0 to 0.1
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NE02133
NE68033
NE68133
NE68533
NE68633
NE68733
NE68833
NE85633
NE94433
NE97733
NE85633
NE02133
NE68033
Marking R32
marking R33
NE68533
NE97833
NE68133
R24 marking
NE94433
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R47 marking
Abstract: U73-U74 NE25118 NE85618 1817 transistor NE34018 NE68018 NE68118 R27 marking NE68618
Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 18 2.1 ± 0.2 +0.10 0.3 -0.05 LEADS 2, 3, 4 1.25 ± 0.1 2.0 ± 0.2 3 2 0.65 1.3 0.60 1 4 +0.10 0.4 -0.05 MARKING 0.15 0.9 ± 0.1 0 to 0.1
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NE25118
NE68618
NE68718
NE68018
NE68118
NE68518
NE68818
NE34018
NE76118
NE85618
R47 marking
U73-U74
NE25118
NE85618
1817 transistor
NE34018
NE68018
NE68118
R27 marking
NE68618
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NE85630
Abstract: T62 marking marking R33 NE02130B NE02130 NE94430 NE68030 NE68130 NE68530 NE68630
Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 30 2.1 ± 0.2 1.25 ± 0.1 0.65 2.0 ± 0.2 2 1.3 3 1 +0.1 0.3 -0.05 ALL LEADS MARKING 0.15 0.9 ± 0.1 0 to 0.1 PART NUMBER NE02130B NE02130
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NE02130B
NE02130
NE68030
NE68130
NE68530
NE68630
NE68730
NE68830
NE85630
NE94430
NE85630
T62 marking
marking R33
NE02130B
NE02130
NE94430
NE68030
NE68130
NE68530
NE68630
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UPA801T
Abstract: UPA800T UPA802T upa801 UPA814T UPA806T UPA807T UPA808T UPA809T UPA810T
Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. S06 2.1±0.1 1.25±0.1 2.0±0.2 RL 0.65 1 1.3 0.65 2 3 6 0.2 +0.1 -0 5 4 DOT ON BACK SIDE 0.9 ± 0.1 0.7 0 ~0.1 PART MARKING NUMBER UPA800T
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UPA800T
UPA809T
UPA801T
UPA810T
UPA802T
UPA811T
UPA806T
UPA812T
UPA807T
UPA814T
UPA801T
UPA800T
UPA802T
upa801
UPA814T
UPA806T
UPA807T
UPA808T
UPA809T
UPA810T
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C1A MARKING
Abstract: c1a c1b c1c marking C1C NE68139 NE02139 NE68839 MARKING r4 ne85639 R47 marking NE68039
Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 +0.10 0.4 -0.05 LEADS 2, 3, 4 2 2.9 ± 0.2 0.95 3 1.9 0.85 4 1 +0.10 0.6 -0.05 +0.2 1.1 -0.1 0.8 0.16 +0.10
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NE02139
NE68039
NE68139
NE68539
NE68639
NE68739
NE68839
NE85639
UPC1675G
UPC1676G
C1A MARKING
c1a c1b c1c
marking C1C
NE68139
NE02139
NE68839
MARKING r4
ne85639
R47 marking
NE68039
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2SC5193
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5193 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz
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2SC5193
2SC5193
2SC5193-T1
25ation,
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T88 NEC
Abstract: 2SC5191-T1B 2sc5191
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5191 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz
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2SC5191
2SC5191
2SC5191-T1B
T88 NEC
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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pt 8726 transistor
Abstract: 2SC5193 2SC5193-T1 2SC5193-T2 T88 NEC
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC5193 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES PACKAGE DRAWING Units: mm • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz
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2SC5193
2SC5193-T1
2SC5193-T2
pt 8726 transistor
2SC5193
2SC5193-T1
2SC5193-T2
T88 NEC
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IC 751 1124
Abstract: 2SC5194 2SC5194-T1 2SC5194-T2
Text: DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS • Low Voltage Operation, Low Phase Distortion Unit: mm NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz 1.25±0.1 QUANTITY PACKING STYLE
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2SC5194
2SC5194-T1
2SC5194-T2
IC 751 1124
2SC5194
2SC5194-T1
2SC5194-T2
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2SK2396A
Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
Text: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The
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P10100EJ6V0SG00
2SK2396A
NEC 2SK2396A
k2396a
pc1658
2SC2407
P10100EJ6V0SG00
UAA 1006
k2396
K2597
Marking Code SAW MOS transistor
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2SC5191
Abstract: nec 2035 744 2SC5191-T1 2SC5191-T2 nec 2412 transistor 2203
Text: DATA SHEET SILICON TRANSISTOR 2SC5191 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS Unit: mm • Low Voltage Operation, Low Phase Distortion 2.8±0.2 0.4 +0.1 −0.05 NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz
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2SC5191
SC-59
2SC5191-T1
2SC5191-T2
2SC5191
nec 2035 744
2SC5191-T1
2SC5191-T2
nec 2412
transistor 2203
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713-102
Abstract: 2SC5194 2SC5194-T1 2SC5194-T2
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SC5192
Abstract: 2SC5192-T1 2SC5192-T2 TD-2485
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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FET marking code g5d
Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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R09CL0001EJ0100
PX10727EJ02V0PF)
FET marking code g5d
PG2179TB
marking code C3E SOT-89
marking code C1E mmic
marking code C1G mmic
2SC3357/NE85634
PG2163T5N
sot-23 g6g
PC8230TU
marking code C1H mmic
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diode t88
Abstract: zener diode 4.7V 1n4000 DIODE t88 diode T-72 diode 1n5000 5261B 5230b 1N4000 1N5000 SERIES
Text: 7 0 2 0 ^ DOOfifi^O Olô •RHil 1N5000 SERIES ZEN ER DIODE GLASS SEALED APPLICATION: FEATURES: - JE D E C IN5000 Series - Silicon planar construction ■DO-35 Package - Available in 8 mm plastic carrier tape - Voltage range: 2.4 to 91V Voltage Regulation
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1N5000
IN5000
DO-35
DO-35
5261B
1N5262B
5262B
1N5263B
5263B
1N5264B
diode t88
zener diode 4.7V
1n4000 DIODE
t88 diode
T-72 diode
5261B
5230b
1N4000
1N5000 SERIES
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diode t88
Abstract: No abstract text available
Text: MOTOROLA Order this document by BAV70WT1/D SEMICONDUCTOR TECHNICAL DATA BAV70WT1 Dual Switching Diode M o to ro la P re ferre d D e vic e ANODE • N— ° 1 CATHODE -N - 2 -O MAXIMUM RATINGS T a = 2 5 ° C Symbol Max Unit Reverse Voltage Rating Vr 70
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BAV70WT1/D
BAV70WT1
SC-70/80T-323
bav70W
diode t88
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NEC IC D 553 C
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC5193 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES PACKAGE DRAWING • Low Voltage Operation, Low Phase Distortion • Low Noise Units: mm NF = 1 .5 dB TYP. @ V c e = 3 V , Ic = 7 mA, f = 2 GHz
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OCR Scan
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2SC5193
SC-70
2SC5193-T1
2SC5193-T2
NEC IC D 553 C
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