Si4482DY
Abstract: No abstract text available
Text: Si4482DY N-Channel 100-V D-S Rated MOSFET Product Summary VDS (V) 100 rDS(on) (W) ID (A) 0.060 @ VGS = 10 V "4.6 0.080 @ VGS = 6 V "4.0 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
|
Original
|
Si4482DY
S-54844--Rev.
15-Sep-97
|
PDF
|
Si4482DY
Abstract: No abstract text available
Text: Si4482DY Single N-Channel, 100-V Rated MOSFET Product Summary VDS V 100 rDS(on) (W) ID (A) 0.060 @ VGS = 10 V "4.6 0.080 @ VGS = 6.0 V "4.0 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
|
Original
|
Si4482DY
S-54844--Rev.
15-Sep-97
|
PDF
|
Si9407AEY
Abstract: DSA0016549
Text: Si9407AEY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.5 0.15 @ VGS = –4.5 V "3.1 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
|
Original
|
Si9407AEY
S-53709--Rev.
04-Aug-97
DSA0016549
|
PDF
|
Si4982DY
Abstract: No abstract text available
Text: Si4982DY Dual N-Channel 100-V D-S Rated MOSFET Product Summary VDS (V) 100 rDS(on) (W) ID (A) 0.150 @ VGS = 10 V "2.6 0.180 @ VGS = 6 V "2.4 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
|
Original
|
Si4982DY
S-54938--Rev.
29-Sep-97
|
PDF
|
Si4982DY
Abstract: No abstract text available
Text: Si4982DY Vishay Siliconix Dual N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.150 @ VGS = 10 V "2.6 0.180 @ VGS = 6 V "2.4 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
|
Original
|
Si4982DY
S-54938--Rev.
29-Sep-97
|
PDF
|
Si4482DY
Abstract: No abstract text available
Text: Si4482DY Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.060 @ VGS = 10 V "4.6 0.080 @ VGS = 6 V "4.0 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
|
Original
|
Si4482DY
S-54844--Rev.
15-Sep-97
|
PDF
|
Si4982DY
Abstract: No abstract text available
Text: Si4982DY Siliconix Dual N-Channel 100-V D-S Rated MOSFET New Product Product Summary VDS (V) 100 rDS(on) (W) ID (A) 0.150 @ VGS = 10 V "2.6 0.180 @ VGS = 6 V "2.4 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
|
Original
|
Si4982DY
Rang100
S-54938--Rev.
29-Sep-97
|
PDF
|
Si4482DY
Abstract: No abstract text available
Text: Si4482DY Siliconix N-Channel 100-V D-S Rated MOSFET New Product Product Summary VDS (V) 100 rDS(on) (W) ID (A) 0.060 @ VGS = 10 V "4.6 0.080 @ VGS = 6 V "4.0 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
|
Original
|
Si4482DY
S-54844--Rev.
15-Sep-97
|
PDF
|
Si4982DY
Abstract: No abstract text available
Text: Si4982DY Dual N-Channel 100-V D-S Rated MOSFET Product Summary VDS (V) 100 rDS(on) (W) ID (A) 0.150 @ VGS = 10 V "2.6 0.180 @ VGS = 6 V "2.4 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
|
Original
|
Si4982DY
S-54938--Rev.
29-Sep-97
|
PDF
|
Si9407AEY
Abstract: No abstract text available
Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.5 0.15 @ VGS = –4.5 V "3.1 –60 S S S SO-8 S S S G 8 D 2 7 D 3 6 D 4 5 D 1 G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
|
Original
|
Si9407AEY
S-99445--Rev.
29-Nov-99
|
PDF
|
Si9407AEY
Abstract: 99445
Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.5 0.15 @ VGS = –4.5 V "3.1 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
|
Original
|
Si9407AEY
S-99445--Rev.
29-Nov-99
99445
|
PDF
|
Si9407AEY
Abstract: No abstract text available
Text: Si9407AEY Siliconix P-Channel 60-V D-S , 175_C MOSFET New Product Product Summary VDS (V) –60 60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.5 0.15 @ VGS = –4.5 V "3.1 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D 5 D G 4 G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
|
Original
|
Si9407AEY
S-57253--Rev.
24-Feb-98
|
PDF
|
LC7074M
Abstract: DIP18 LA2230 LC7074
Text: Ordering number:ENN4789 CMOS IC LC7074, 7074M Synchronous Error Correction IC for RDS Applications Overview Package Dimensions The LC7074 and the LC7074M are ICs for the RDS radio data system implemented by the EBU (European Broadcasting Union) and the RDBS (radio broadcast data system) implemented by the NRSC (National Radio System
|
Original
|
ENN4789
LC7074,
7074M
LC7074
LC7074M
LA2230
LC7074/M
DIP18
|
PDF
|
R5F52108CGFP
Abstract: R5F52106BDLJ R5F52108CGFN R5F52106BDFM#30 R5F52108CDFP R5F52107CDFN#30
Text: Datasheet RX210 Group R01DS0041EJ0150 Rev.1.50 Oct 18, 2013 Renesas MCUs 50-MHz 32-bit RX MCUs, 78 DMIPS, up to 1-MB flash memory, 12-bit A/D, 10-bit D/A, ELC, MPC, RTC, up to 15 comms channels; incorporating functions for IEC60730 compliance Features PLQP0144KA-A 20 x 20 mm, 0.5-mm pitch
|
Original
|
RX210
R01DS0041EJ0150
50-MHz
32-bit
12-bit
10-bit
IEC60730
PLQP0144KA-A
PLQP0100KB-A
PLQP0080KB-A
R5F52108CGFP
R5F52106BDLJ
R5F52108CGFN
R5F52106BDFM#30
R5F52108CDFP
R5F52107CDFN#30
|
PDF
|
|
|
OV 5693
Abstract: No abstract text available
Text: Revised Mar. 1998 JS9P09-AS 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT PldB 23.0 24.0 — dBm
|
OCR Scan
|
JS9P09-AS
254mm
OV 5693
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si9407AEY VISHAY Siliconix P-Channel 60-V D-S , 175°C MOSFET New Product Product Summary VDS(V) rDS(on) (£2) -60 0.120 @VGs = -10 V 0.15 @ Ygs = ^1.5 V Id (A) ±3.5 ±3.1 Vv^V°sf6ls P 0- >N e t s s s SO-8 D D D D P-Channel MOSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)
|
OCR Scan
|
Si9407AEY
S-57253â
24-Feb-98
S2SM735
DD17flflT
|
PDF
|
005 418
Abstract: NJM082D njm4556 NJM2068D dmP8
Text: o p e ra tio n a l a m p lifie r e le c t r ic a l c h a r a c te r is tic s ta b le QeD • Bipolar Power Supply Single Supply T yp e Circuit Functions Dual General Low Distortion High Output Low Pow er Precision Quad General Low Distortion General Precision
|
OCR Scan
|
NJM2904D/M/V/L
NJM3404AD/M/V/L
NJM3414AD/M/V/L
NJM2132D/M/V/L
32nV/VHz
NJM2119D/M
NJM324D/M/V
MP/DMP/SSOP14
NJM2902N/M/V
DlP/DMP/SSOP-14
005 418
NJM082D
njm4556
NJM2068D
dmP8
|
PDF
|
HA20
Abstract: No abstract text available
Text: Tem ic SÌ4482DY S e m i c o n d u c t o r s N-Channel 100-V D-S Rated MOSFET Product Summary VDS(V) rDS(on) (Q ) I d (A) 0.060 @ VGS = 10 V ± 4 .6 0.080 @ VGS = 6 V ± 4 .0 100 D Q SO-8 s N-Channel M O SFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)
|
OCR Scan
|
4482DY
S-54844--Rev.
15-Sep-97
HA20
|
PDF
|
ex 2822
Abstract: No abstract text available
Text: 512K x 8 CMOS STATIC RAM MODULE IDT7M4048 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • H igh-den sity 4 m e gabit C M O S S ta tic R A M m o dule T h e ID T 7 M 40 48 is a 4 m e gabit 512K x 8 C M O S S tatic RAM m o dule co n stru cte d on a co-fired cera m ic sub strate
|
OCR Scan
|
IDT7M4048
32pin,
ex 2822
|
PDF
|
Untitled
Abstract: No abstract text available
Text: T em ic SÌ4982DY S e m i c o n d u c t o r s Dual N-Channel 100-V D-S Rated MOSFET Product Summary VDS(V) I d (A) n>S(on) (ß ) 100 0.150 @ Vqs = 10 V ±2.6 0.180 @ Vqs = 6 V ±2.4 po*e SO-8 s' E 0, IX Œ g2 q : ~ n D! T 1 D, ID ~5~l D2 Top View Ô s Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)
|
OCR Scan
|
4982DY
S-54938--
29-Sep-97
S-54938--Rev.
|
PDF
|
RS flip flop IC
Abstract: 7074 TA 7074 54HC74 SN74HC7074
Text: SN54HC7074, SN74HC7074 6-SECTION MULTIFUNCTION NAND, INVERT, NOR. FLIP FLOP CIRCUITS D 2 8 3 1 , MARCH 19B 4 -REVISED SEPTEMBER 1987 SN 54H C 7074 . JT P AC KA G E S N 74H C 7074 D W OR N T PAC KAG E Contains D-type Flip-Flops w ith Preset and Clear, N AND, NOR, and Inverter Gates
|
OCR Scan
|
SN54HC7074,
SN74HC7074
300-m
RS flip flop IC
7074
TA 7074
54HC74
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIU54HC7074, SN 74 H C 70 74 6-SECTION M ULTIFUNCTION NAND. INVERT. NOR. FLIP FLOP CIRCUITS 028 31 , MARCH 1984-REVISED SEPTEMBER 1987 SN 54H C 7074 . . . JT PACKAGE SN 74H C 7074 . . . DW OR NT PACKAGE Contains D-type Flip-Flops w ith Preset and Clear, N A N D , NOR, and Inverter Gates
|
OCR Scan
|
SIU54HC7074,
1984-REVISED
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HDSL2 Transformer Parameter - Designed for HDSL2 applications Turns Ratio 1 1 : 2 ± 3% Compatible with Level One SK 70740/41/42 Inductance (2) 1.75 ±8% mH Low Profile "Touch Tone" design Longitudinal Balance, 20 kHz to 600 kHz 50 min. dB Operating Temp. Range -40°C to +85°C
|
OCR Scan
|
T-1316
T-1316G
40kHz
300kHz
100kHz
y-EE3RS2311
|
PDF
|
8 pin ic lm339
Abstract: No abstract text available
Text: LM139/139A. LM339 LM139/139A, LM339 Single Supply Quad Comparators Description Features These devices offer higher frequency operation and faster switching than can be had from internally compensated quad op amps. Intended for single supply applications, tie Darlington PNP Input stage allows
|
OCR Scan
|
LM139/139A,
LM339
LM139/139A.
LM339
2N2222
8 pin ic lm339
|
PDF
|
