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    24N60D

    Abstract: No abstract text available
    Text: HA R R I S S E M I C O N D S E C T O R '_p ' 3 <=ì - ’S I 4305271 G03SÔMÔ H H H A S H G TA 24N 60D 1C ^ H a r r is August 1991 40E D Current Se n sin g N -C h an n e l Enhancem ent-M ode Insulated Gate Bipolar Transistor IGBT) Package Features • 24A, 600V


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