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    TAIWAN SEMICONDUCTOR S1M Search Results

    TAIWAN SEMICONDUCTOR S1M Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TAIWAN SEMICONDUCTOR S1M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ru 94v0

    Abstract: No abstract text available
    Text: S1AL thru S1ML Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Rectifier - Glass passivated junction chip - Ideal for automated placement - Low-Profile Package - Low power loss, high efficiency - Moisture sensitivity level : level 1, per J-STD-020


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    PDF J-STD-020 2011/65/EU 2002/96/EC AEC-Q101 JESD22-B102 D1309028 ru 94v0

    Untitled

    Abstract: No abstract text available
    Text: S1JLS thru S1MLS Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Rectifiers - Ideal for automated placement - Compact package size - High surge current capability - Low power loss, high efficiency - Moisture sensitivity level: level 1, per J-STD-020


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    PDF J-STD-020 2011/65/EU 2002/96/EC OD123HE AEC-Q101 JESD22-B102 D1404004

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    Abstract: No abstract text available
    Text: S1A thru S1M Taiwan Semiconductor CREAT BY ART Surface Mount Rectifiers FEATURES - Glass passivated chip junction - Ideal for automated placement - Low forward voltage drop - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020


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    PDF J-STD-020 2011/65/EU 2002/96/EC DO-214AC AEC-Q101 JESD22-B102 D1405026

    Untitled

    Abstract: No abstract text available
    Text: S1AL thru S1ML Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Rectifier - Glass passivated junction chip - Ideal for automated placement - Low-Profile Package - Low power loss, high efficiency - Moisture sensitivity level : level 1, per J-STD-020


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    PDF J-STD-020 2011/65/EU 2002/96/EC JESD22-B102 D1309028

    Untitled

    Abstract: No abstract text available
    Text: S1AL thru S1ML Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Rectifier - Glass passivated junction chip - Ideal for automated placement - Low-Profile Package - Low power loss, high efficiency - Moisture sensitivity level: level 1, per J-STD-020


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    PDF J-STD-020 2011/65/EU 2002/96/EC AEC-Q101 JESD22-B102 D1405032

    Untitled

    Abstract: No abstract text available
    Text: S1JLS thru S1MLS Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Rectifiers - Ideal for automated placement - Compact package size - High surge current capability - Low power loss, high efficiency - Moisture sensitivity level: level 1, per J-STD-020


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    PDF J-STD-020 2011/65/EU 2002/96/EC OD123HE JESD22-B102 D1401012

    ru 94v0

    Abstract: No abstract text available
    Text: S1AL thru S1ML Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Rectifier - Glass passivated junction chip - Ideal for automated placement - Low-Profile Package - Low power loss, high efficiency - Moisture sensitivity: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and


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    PDF J-STD-020 2011/65/EU 2002/96/EC AEC-Q101 JESD22-B102 D1309028 ru 94v0

    S1ML

    Abstract: No abstract text available
    Text: S1AL thru S1ML Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Rectifier - Glass passivated junction chip - Ideal for automated placement - Low-Profile Package - Low power loss, high efficiency - AEC-Q101 qualified Green compound not involved - Moisture sensitivity level: level 1, per J-STD-020


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    PDF AEC-Q101 J-STD-020 2011/65/EU 2002/96/EC JESD22-B102 D1309028 S1ML

    Untitled

    Abstract: No abstract text available
    Text: S1AL thru S1ML Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Rectifier - Glass passivated junction chip - Ideal for automated placement - Low-Profile Package - Low power loss, high efficiency - AEC-Q101 qualified Green compound not involved - Moisture sensitivity level : level 1, per J-STD-020


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    PDF AEC-Q101 J-STD-020 2011/65/EU 2002/96/EC JESD22-B102 D1309028

    Taiwan SemiConductor S1M

    Abstract: S1A-T1 MARKING S1J S1m diode S1m Taiwan S1M-T S1A-35 S1M-T3 s1m smb
    Text: S1A – S1M W TE PO WE R SEM IC O ND UC TO R S 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Power Loss


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    PDF SMB/DO-214AA MIL-STD-750, Taiwan SemiConductor S1M S1A-T1 MARKING S1J S1m diode S1m Taiwan S1M-T S1A-35 S1M-T3 s1m smb

    S1m diode

    Abstract: No abstract text available
    Text: S1A – S1M WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features  Glass Passivated Die Construction       Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Power Loss


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    PDF SMB/DO-214AA SMB/DO-214AA, S1m diode

    S1m diode

    Abstract: diode s1m Taiwan SemiConductor S1M diode S1J s1m taiwan semiconductor S1J Diode S1A-35 s1m4
    Text: S1A – S1M WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Power Loss


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    PDF SMB/DO-214AA SMB/DO-214AA, MIL-STD-750, S1m diode diode s1m Taiwan SemiConductor S1M diode S1J s1m taiwan semiconductor S1J Diode S1A-35 s1m4

    Untitled

    Abstract: No abstract text available
    Text: S1A – S1M 1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction       Ideally Suited for Automatic Assembly Low Forward Voltage Drop Surge Overload Rating to 60A Peak


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    PDF SMB/DO-214AA, MIL-STD-750,

    S1M DO-214AC

    Abstract: "General Semiconductor" DO-214AC JEDEC DO-214AC Taiwan SemiConductor S1M JEDEC DO-214AC DC COMPONENTS 18L3 CBVK741B019 F63TNR F924 FMKA140
    Text: S1A-S1M S1A - S1M Features • Low profile package. • Glass passivated junction. SMA/DO-214AC COLOR BAND DENOTES CATHODE 1.0 Ampere General Purpose Rectifiers Absolute Maximum Ratings* Symbol IF AV TA = 25°C unless otherwise noted Parameter Value Units


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    PDF SMA/DO-214AC S1M DO-214AC "General Semiconductor" DO-214AC JEDEC DO-214AC Taiwan SemiConductor S1M JEDEC DO-214AC DC COMPONENTS 18L3 CBVK741B019 F63TNR F924 FMKA140

    EG8504

    Abstract: L3P09X-25G00 L3P13X l3p09 Q22FA238 l3p13y mother board lcd tv block diagram L3P13Y-25G00 L3P13X-25G00 L3P13X-21G00
    Text: TS002-09 2001.4 - Based on new Product Number The Integrated Strength of Electronic Device Business Providing Three Types of Electronic Devices as Individual Devices or as Sets Semiconductors LSIs Liquid crystal displays (LCDs) Customer Crystal(quartz) devices (QDs)


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    PDF TS002-09 EG8504 L3P09X-25G00 L3P13X l3p09 Q22FA238 l3p13y mother board lcd tv block diagram L3P13Y-25G00 L3P13X-25G00 L3P13X-21G00

    P65N06

    Abstract: 65N06 similar mosfet of fqp65n06 MOSFET, 3077 30A60CT BT412 AC ENERGY SAVING light CIRCUIT DIAGRAM IRFB3077 FQP65N06 fb3077
    Text: A Product Line of Diodes Incorporated DN94 High performance rectifiers significantly improve server power supply efficiency Dr Yong Ang, Diodes Incorporated Introduction Alternative approaches can improve the existing methods of using Schottky diodes in high


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    PDF D-81541 P65N06 65N06 similar mosfet of fqp65n06 MOSFET, 3077 30A60CT BT412 AC ENERGY SAVING light CIRCUIT DIAGRAM IRFB3077 FQP65N06 fb3077

    GENERAL SEMICONDUCTOR MARKING mJ SMA ED

    Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
    Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)


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    PDF GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A

    Marking code NG

    Abstract: s1jl marking S1DL ml marking S1GL
    Text: m TAIWAN SEMICONDUCTOR S1AL-S1M L 1.0 AMP. Surface Mount Rectifiers RoHS Sub SMA COMPLIANCE Features > ^ •y4^ -Y^ For surface mounted application Glass passivated junction chip. Low-Profile Package Ideal for automated placement Low power loss, high efficiency


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    PDF RS-481 Marking code NG s1jl marking S1DL ml marking S1GL

    S1GL

    Abstract: Y MARKING S1DL
    Text: is S1A L-S1M L TAIWAN SEMICONDUCTOR 1.0 AMP. Surface Mount Rectifiers Sub SMA RoHS COMPLIANCE - C n th o d e B and -Y- ii 'Id f ? UL Recognized File # E-326243 For surface mounted application Glass passivated junction chip. Low-Profile Package Ideal for automated placement


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    PDF E-326243 AEC-Q101 plate-55 S1GL Y MARKING S1DL

    Untitled

    Abstract: No abstract text available
    Text: s TAIWAN SEMICONDUCTOR S1AL -S 1 M L RoHS 1.0 AMP. Surface Mount Rectifiers COMPLIANCE Sub SMA - CaUioOaBard i\- Features •4* ❖ -v* ^ •v" For surface m ounted application Glass passivated ju nctio n chip. Low -Profile Package Ideal fo r autom ated placem ent


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    PDF AEC-Q101

    S1J taiwan

    Abstract: S1A.S1M s1m taiwan semiconductor JESD22-B102D J-STD-002B Taiwan SemiConductor S1M
    Text: is S 1 A -S 1M TAIWAN SEMICONDUCTOR 1.0 AMP. Surface Mount Rectifiers S MA/DO-214AC RoHS COMPLIANCE Features •> -Y- -Y-Y- -0- UL Recognized File # E-326243 For surface mounted application G lass passivated junction chip. Low forward voltage drop High current capability


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    PDF /DO-214 E-326243 AEC-Q101 J-STD-002B JESD22-B102D. 50Vdc S1J taiwan S1A.S1M s1m taiwan semiconductor JESD22-B102D Taiwan SemiConductor S1M

    RS431

    Abstract: rs1ml subsma marking code PARI
    Text: E TAIWAN SEMICONDUCTOR RoHS R S1A L - R S1M L O.S AMP. Surface Mount Fast Recovery Rectifiers Sub SMA COMPLIANCE Features -Y<$>❖ F a r s u rfa c e m o u n te d a p p lica tio n G la s s passrva led Ju n cli on ch i p Built-in s tra in re lie f, ideal fo r a u to m a te d


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    PDF RS-431 125cC RS431 rs1ml subsma marking code PARI

    A08 amp

    Abstract: JESD22-B102D J-STD-002B DO214AC code PB A08 s AEC Q101 004 lt008 A08S s1ms LR1 MARKING CODE SMA
    Text: [s S 1 A S -S 1 M S TAIWAN SEMICONDUCTOR Pb 1.0 AMP. Surface Mount Rectifiers SMA/DO-214AC RoHS CO M PLIAN CE n T .050 1.27 .111(2.83) .090(2.29) i Features -v-v-v-Y<• -0-v<■ Fo r s u rface m o u n ted applicatio n G la s s p a s s iv a te d ju nction chip.


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    PDF SMA/DO-214AC 5/10ns/cm A08 amp JESD22-B102D J-STD-002B DO214AC code PB A08 s AEC Q101 004 lt008 A08S s1ms LR1 MARKING CODE SMA

    marking code nt

    Abstract: S1J taiwan SMA MARKING S1G s1m marking code SMA MARKING S1J SMA MARKING S1M JESD22-B102D J-STD-002B s1m taiwan semiconductor SMA MARKING S1d
    Text: % TAIWAN SEMICONDUCTOR S 1A- S 1M 1.0 AMP. Surface Mount Rectifiers SM A/DO-214AC RoHS C O M P L IA N C E F e a tu re s ^ -v* ^ -y* 4 • - ^ 4- For su rfa ce m ou nte d a p p lica tio n G lass p a ssiva te d ju n c tio n chip. Low forw ard v o lta g e drop


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    PDF SMA/DO-214AC J-STD-020, 50Vdc 10ris/ marking code nt S1J taiwan SMA MARKING S1G s1m marking code SMA MARKING S1J SMA MARKING S1M JESD22-B102D J-STD-002B s1m taiwan semiconductor SMA MARKING S1d