LESDA14V2LT1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual transil array for ESD protection General Description The LESDA25VLT1G is a dual monolithic voltage suppressor designed to protect components which are connected to data and transmission lines against ESD. It clamps the voltage just above the logic level
|
Original
|
LESDA25VLT1G
LESDA25VLT1G
RS232
195mm
150mm
10Reel/Inner
30KPCS/Inner
3000PCS/Reel
80KPCS/Inner
LESDA14V2LT1G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. LESDA6V1W5T1G Quad Array for ESD Trotection General Description Features The LESDA6V1W5T1G is a monolithic suppressor designed to protect components connected to data and transmission lines against ESD. The device clamp the voltage just above the logic level supply
|
Original
|
IEC61000-4-2
OT-353
|
PDF
|
LESDA6V1W6T1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. LESDA6V1W6T1G Transil array for data protection General Description Features The LESDA6V1W6T1G is a monolithic suppressor designed to protect components connected to data and transmission lines against ESD. The device clamp the voltage just above the logic level supply
|
Original
|
IEC61000-4-2
OT-363
LESDA6V1W6T1G
|
PDF
|
ESDA14V2
Abstract: ESDA25 30156
Text: ESDAxx Series Dual transil array for ESD protection P b Lead Pb -Free Description: * The ESDAxx is a dual monolithic voltage suppressor designed to protect components which are connected to data and transmission lines against ESD. It clamps the voltage just above the logic level supply for positive transients,
|
Original
|
8/20s)
IEC61000-4-2
ESDA14V2
ESDA25
26-Apr-07
ESDA14V2
ESDA25
30156
|
PDF
|
1N5908 diode
Abstract: 1N5908 CB429 SM5908 STMicroelectronics DIODE marking code smc diode marking ed STMicroelectronics smc marking code
Text: 1N5908 SM5908 TRANSILTM FEATURES UNIDIRECTIONAL TRANSIL DIODE PEAK PULSE POWER : 1500 W 10/1000µs REVERSE STAND OFF VOLTAGE : 5 V LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION The 1N5908 and SM5908 are dedicated to the 5 V logic circuit protection (TTL and CMOS technologies).
|
Original
|
1N5908
SM5908
1N5908
SM5908
CB429
1N5908 diode
CB429
STMicroelectronics DIODE marking code
smc diode marking ed
STMicroelectronics smc marking code
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WT-C169TW Flash LED White Product Specifications Specification Iv Material Quantity Minimum 4000 mcd @100mA/ Ta= 25O C Pulse Condition : 2 Sec on, 5 Sec off If=300mA Iv: 10CD Tolerance: + 10% λD X=0.30, Y=0.31 (20mA per die) @100mA/ Ta=25O C Tolerance: + 0.01
|
Original
|
WT-C169TW
100mA/
300mA
81-1A
220x240mm
2015min;
15min
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WT-384FCH TOP Mount RGB Chip LED Product Specifications Specification Iv Material Quantity Red : 71.5 mcd minimum Green : 71.5 mcd minimum Blue : 45.0 mcd minimum O @20mA/ Ta= 25 C;Tolerance ±10% λD Red : 624 nm typical Green : 525 nm typical Blue : 470 nm typical
|
Original
|
WT-384FCH
81-1A
220x240mm
24hrs
CNS-11829
168hrs
Tamb25Â
1000hrs
JESD-A101-B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD ESDAxxL SERIES DUAL TRANSIL TVS ARRAY Features z z z z z z z z z SOT-23 Package 2 Unidirectional Transil functions Peak Power Dissipation 300W @8 x 20 us Pulse Low Leakage Fast Response Time < 1 ns Protects RS232 I/O Port
|
Original
|
OT-23
RS232
ESDA25L
Tamb-25Â
|
PDF
|
marking E61 diode
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. LESDA5V3LT1G S-LESDA5V3LT1G LESDA6V1LT1G S-LESDA6V1LT1G LESDA14V2LT1G S-LESDA14V2LT1G LESDA25VLT1G S-LESDA25VLT1G Dual transil array for ESD protection General Description The LESDA5V3LT1G is a dual monolithic voltage suppressor designed to protect components which
|
Original
|
LESDA14V2LT1G
S-LESDA14V2LT1G
LESDA25VLT1G
S-LESDA25VLT1G
RS232
withs14V2LT1G
S-LESDA14V2LT1G
OT-23
marking E61 diode
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Low Capacitance Q uad Array for ESD Protection General Description The LESDA6V1W5T1G is a monolithic suppressor designed to protect components connected to data and transmission lines against ESD. The device clamp the voltage just above the logic level supply
|
Original
|
IEC61000-4-2
|
PDF
|
LESDA6V1W5T1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Low Capacitance Q uad Array for ESD Protection General Description The LESDA6V1W5T1G is a monolithic suppressor designed to protect components connected to data and transmission lines against ESD. The device clamp the voltage just above the logic level supply
|
Original
|
|
PDF
|
HT-150Y
Abstract: HARVATEK HT HT-150D HT-150SD HT-150UR HT-150UYG HT-150YG ht-150
Text: Top-emitting 1206 3216 HT-150 Series Harvatek Surface Mount LED Data Sheet HT-150 Series Official Product Product: HT-150 Series Data Sheet No. Tentative Product * HT-150 Series Specifications are subject to change without notice. Data and
|
Original
|
HT-150
HT-150Y
HARVATEK HT
HT-150D
HT-150SD
HT-150UR
HT-150UYG
HT-150YG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Top-emitting 1205 Reverse Mountable HT-260 Series Harvatek Surface Mount LED Data Sheet HT-260 Series Official Product Product: HT-260 Series Data Sheet No. Tentative Product * HT-260 Series Specifications are subject to change without notice. Data and
|
Original
|
HT-260
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Special Color - White HT-U169BP Harvatek Surface Mount CHIP LEDs Approval Sheet Model No.: HT-U169BP Acknowledged by _ Section Manager Production Engineering Dept. Official Product HT Part No. HT-U169BP Tentative Product *
|
Original
|
HT-U169BP
HDS-U169BP
24hrs
168hrs
Tamb25Â
1000hrs
|
PDF
|
|
sfd 349
Abstract: BAY45 BAY41 1N3069 BAW55 D185
Text: DO 7 DO 35 CB 26 (CB 102) Silicon signal diodes - High current switching Tamb25 0C D iodes de signa! au s ilic iu m • C o m m u ta tio n f o r t c o u ra n t Type Case B oîtie r V R - V RM (V) 'o (m A) VF / ' F (V ) / (m A) Ir / V r < n A )/ (V) >R / vR
|
OCR Scan
|
Tamb25Â
Tamb150Â
OP473
DTamb100Â
sfd 349
BAY45
BAY41
1N3069
BAW55
D185
|
PDF
|
BCY59
Abstract: BCY58 bcy59c bcy58v BCY 85 bcy59v
Text: BCY58, BCY59 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications electronic design in commercial The transistors are subdivided into four groups A, B, C and D according to their current gain. max. 5.0$ max.0.50 Metal case JE D E C TO -18
|
OCR Scan
|
BCY58,
BCY59
BCY58
BCY59
bcy59c
bcy58v
BCY 85
bcy59v
|
PDF
|
Untitled
Abstract: No abstract text available
Text: * Uppgjord-Prepared f FJ M/TI2 G E n g s t r d m ^ ^ Dokansv/Godk -Doe rosponsfKpprovd M/TO Sheet Rev. 2 A 3 A Tekn amv -Ttchmcaljuponiiblt M/TI2C Granskad-Checked M/TI2C OoKumtntnannn - Document name Biad - Sheet Article list Nr-No 120 PBL 3726/16N Datum •Data
|
OCR Scan
|
3726/16N
PBL372616N
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 27C128 M ic r o c h ip 128K 16K x 8 CMOS EPROM FEATURES PACKAGE TYPE DIP/SOIC • High speed performance - 120 ns access time available Vpp C A12C 2 A it; 3 A6C 4 A5 C 5 A4 C 6 A3 C 27C128 A2 C 8 A lC 9 AO C 10 • CMOS Technology for low power consumption
|
OCR Scan
|
27C128
28-pin
DS11003J-page
L103S01
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 27C64 M ic r o c h ip 64K 8K x 8 CMOS EPROM FEATURES PACKAGE TYPE DIP/SOIC • High speed performance - 120 ns access time available Vpp C A12C A7C A 6C A 5C A4C •1 2 3 4 5 6 A3C 7 A2Ü B A lC 9 A0 C 10 o o C 11 01C 12 02 £ 13 VesE 14 • C M O S Technology for low power consumption
|
OCR Scan
|
27C64
DS11l07K-page
bl03201
00130b?
|
PDF
|
UL1111N
Abstract: UL1111 moc 116 UL11
Text: 3-77/2 UKLAD SCALONY ANALOGOWY UL1111N SWW 1156-32 6*2,54 6,4 7,6 UL1111N A i4 i i4i A i^ i <4v—v 14 13 12 11 10 9 8 / 2 3 4 5 6 7 3 - s i © cn < 17,8 U k la d scalo n y w o budow ie p la sty k o w e j ty p u CE70 TO-116 (m lW \ Podtoze S c h e m a t e le k try c z n y
|
OCR Scan
|
UL1111N
O-116)
1111N
UL1111N
tamb-25Â
1111N
PN-73/E-04550.
UL1111
moc 116
UL11
|
PDF
|
Katalog CEMI
Abstract: OA81 diode byp 660-50r Philips BC147 p 181 transoptor Mullard oa81 Hitachi 12V MS 5A-181 OA81 BA102 diode telefunken hr 780 rds
Text: WSTIJP W ydaw nictw a Przem yslu M aszynowego WEMA przekazujq uzytkow nikom branzow y katalog pt. E l e m e n t y pólp rz e w o d n i k o w e , zaw ierajqcy dokladne inform acje techniczne dotycz^ce elem entów pólprzew odnikow ych produkow anych w Polsce n a skal^ przem yslow ^. W szystkie w yroby
|
OCR Scan
|
|
PDF
|
Katalog CEMI
Abstract: uca64121 UCA6400 UL1405 UL1211 UCY7400N UL1490N elektor SESCOSEM ul1402l
Text: W iadom osci ogólne WSTIJP W y d aw n ic tw a P rz e m y s lu M aszynow ego W EM A p rz e k a zujq u z y tk o w n ik o m k a ta lo g b ra n z o w y pt. P rzy rz q d y p ó lp rz e w o d n ik o w e , z a w ie ra j^ c y d o k lad n e in fo rm a c je te c h nicze dotycz^ce p rz y rz q d ó w p ó lp rze w o d n ik o w y c h p ro d u k o w a n y ch w P o lsce n a sk al$ przem y slo w ^ .
|
OCR Scan
|
UL1611N
1611N
UL16HN
UCC-12V
PN-73/E-04550.
Katalog CEMI
uca64121
UCA6400
UL1405
UL1211
UCY7400N
UL1490N
elektor
SESCOSEM
ul1402l
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FZT948 FZT949 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS *— - - ISSU E 2 - NOVEMBER 1995_ FEATURES * E x tre m e ly lo w e q u iv a le n t o n -re sista n ce; RCE(satl * 6 A m p s c o n tin u o u s cu rre n t
|
OCR Scan
|
OT223
FZT948
FZT949
Tamb-25
|
PDF
|
VQC10
Abstract: No abstract text available
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT704 IS SU E 2 - SEPTEM BER 1995 FEA TU RES * 2A CONTINUOUS CURRENT * FA ST SW ITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COM PLEM ENTARY TYPE - FZT604 PART MARKING D ETAIL FZT704 •= ABSOLUTE MAXIMUM RATINGS.
|
OCR Scan
|
OT223
FZT704
FZT604
FZT705
Tamb-25
VQC10
|
PDF
|