smd transistor marking EY
Abstract: SMD TRANSISTOR MARKING 3211 ahr TRANSISTOR smd transistor SMD S33 ahr11 SMD Transistor 1lm SMD TRANSISTOR MARKING 2Nx SMD TRANSISTOR MARKING 2D transistor kc 2026 dw11
Text: m&s.lTio2/16E U November 1964 WPFR5S7XNG MIL-B-195C+6D 27 Eecember 1*1 MILITASY SPECITICAT20N TRANSISTOR, GVN, SILICON TTPES 2N3.42, 2NX% , A:lD 2N343 i, mandatory for “8. of the DePart.mnt of Defame. by all ‘211h SDOoifiCd.iorJ Awmim 1. tamlt~ md -E 1.1
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lTio2/16E
MIL-B-195C
SPECITICAT20N
2N343
NIL-S-195Cr2
qF02ifi+
2N342
411wII.
2N342
2N342A,
smd transistor marking EY
SMD TRANSISTOR MARKING 3211
ahr TRANSISTOR smd
transistor SMD S33
ahr11
SMD Transistor 1lm
SMD TRANSISTOR MARKING 2Nx
SMD TRANSISTOR MARKING 2D
transistor kc 2026
dw11
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Untitled
Abstract: No abstract text available
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSUE 3 - DECEMBER 1995 O_ FEATURES * 200 Volt V DS * ^DS on = P A R T M A R K IN G D E T A I L - M U SOT23 ABSOLUTE M A X IM U M RATINGS. VALUE UNIT V Ds 200 V C ontinuous Drain Current at Tamlj=250C
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Untitled
Abstract: No abstract text available
Text: FORWARD INTCHNAHONAL ELECTRONICS LTD, BC556 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AF AMPLIFIER Package: TO-92 * Complement To BC546 * High Voltage * Collector-Emitter Voltage : Veeo=-65V ABSOLUTE MAXIMUM RATINGS at Taml»=25*C
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BC556
BC546
-10mA
100mA
-10mA
-100mA
200uA
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Untitled
Abstract: No abstract text available
Text: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE PIN CONFIGURATION 1 l * t PARTMARKING DETAIL FM M V109-4A 1 3 ABSOLUTE MAXfMUM RATINGS. PARAMETER SYMBOL Power Dissipation at Tamlj=25°C Ptot Tj-Tjtg Operating and Storage Temperature Range VALUE UNIT 330 mW
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V109-4A
250MHz
V/25V,
50MHz
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 - MARCH 94 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BO L VALUE UNIT v CBO -50 V v CEO -45 V V EBO -5 V Peak Pulse Current 'cm -1 A Continuous Collector Current 'c -800 mA Power Dissipation at Tamlj=25°C ^tot
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-100nA
-100jiA
-500mA,
-50mA*
-300mA,
-100mA,
300mA,
50MHz
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94 FEATURES * 100 Volt V,DS R DS on -8£2 ABSOLUTE MAXIMUM RATINGS. SYMBOL Drain-Source Voltage Continuous Drain Current at Tamly=250C Pulsed Drain Current Gate Source Voltage VALUE UNIT < o tn PARAMETER
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0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -JUNE 94_ FEATURES * 60 V olt VQS * R DS on = 1 ß REFER TO ZVN4206A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage Vos 60 V •d 600 mA A Continuous Drain Current at Tamlf=25°C
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ZVN4206A
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BAT 127
Abstract: A502GE A503GE byv 20 BYV 35 CB-127
Text: silicon signal diodes O diodes de signal au silicium Type VRRM V |R ! V r max WA) (V) 'F 'O* ImA) schottky diodes BAR BAT BAR BAT THOMSON'CSF vf max (V) / if ImA) C / max (pF) Dynamic parameter« Vr IV) Tamlb = 25°C diodes sch ottky 19 29 35 19 4 5 5 10
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/10mA
/20mA
CB-247
CB-18
BAT 127
A502GE
A503GE
byv 20
BYV 35
CB-127
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94_ FEATURES * 350 Volt VDS R OS on = 3 5 i î ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT VDS 350 V b 90 mA 1 A ±20 V 700 mW -55 to +150 °C Drain-Source Voltage Continuous Drain Current at Tamlj=250C
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100mA
300ns.
ZVN2535A
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSUE 2 - MARCH 94_ FEATURES * 200 Volt VDS * R DS on = 2 5 £ î ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L Continuous Drain Current at Tamlj=25°C VALUE UNIT < o (/> Drain-Source Voltage
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001G35S
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LS604
Abstract: 74ls604 SN74LS604
Text: TYPES SN54LS604 THRU SN54LS607, SN74LS604 THRU SN74LS607 OCTAL 2-INPUT MULTIPLEXED LATCHES D 2545, JU L Y 1979 - R E V IS E D D E C E M B E R 1 9 8 3 T IM 9 96 0 4 T H R U T IM 9 9 6 07 Choice of Outputs: Three-State ('LS604, ’ LS606) Open-Collector ('LS605, 'LS607)
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SN54LS604
SN54LS607,
SN74LS604
SN74LS607
LS604,
LS606)
LS605,
LS607)
LS605)
LS604
74ls604
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ericsson bml 403
Abstract: PBL3764 TRANSISTOR ztx 105 3a OE RSG Series TRANZORB ericsson slic JW216 TRANSISTOR ztx 105 3a circuit diagram
Text: ERICSSON ^ September 1989 PBL 3764 Subscriber Line Interface Circuit Description Key Features The PBL 3764 Subscriber Line Interface Circuit SLIC is a bipolar integrated circuit in 75 V technology which replaces the conventional transform er based analog line
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PBL3764N*
3764J
3764/2J
3764QN*
3764QC
3764/2QC
3764CC
ericsson bml 403
PBL3764
TRANSISTOR ztx 105 3a
OE RSG Series
TRANZORB
ericsson slic
JW216
TRANSISTOR ztx 105 3a circuit diagram
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Untitled
Abstract: No abstract text available
Text: HD153011 2-7 RLL ENDEC built-in VFO Description The HD153011 is a 2-7 R L L EN D EC built-in VFO IC developed for magnetic disks. This device decodes a 2-7 R L L signal read from a magnetic disk into an N R Z signal, and encodes an NRZ signal to be written to a magnetic disk into a 2-7
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HD153011
HD153011
AIC-6110,
CL-SH260/250
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54S474
Abstract: tea 1601 t 54S473 3014 LED 82s141 hf 13005 t1al fuse 13005 TRANSISTOR SEC 13005 transistor 13005 can be replaced with
Text: 1 MIL-M-38510/208C 31 J a n u a r y 1 9 8 4 iÜKtKbEÜING MIL-M-38510/208B 16 A u g u s t 1 9 8 2 MILITARY SPECIFICATION BIPOLAR, MICROCIRCUITS, DIGITAL, 4096-BIT STHOTTKY P R O G R A M M A B L E R E A D - O N L Y M E M O R Y P RO M , M O N O L I T H I C
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MIL-M-38510/208C
MIL-M-38510/208B
4096-BIT
I-M-3A510,
H1L-H-3S510.
54S473/Nat1ona1
5349-1/Monoi
29621/Raytheon
CRP/07933
54S472/Nat1onal
54S474
tea 1601 t
54S473
3014 LED
82s141
hf 13005
t1al fuse
13005 TRANSISTOR
SEC 13005
transistor 13005 can be replaced with
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dilmon 28
Abstract: transistor DA 218
Text: be!E D • 37bfi522 DD1770R RflO m P L S B PSLU4I G E C P L E S S E Y GEC PLESSEY SEMICONDS S E M I C O N D U C T O R S DS2349-2.2 ULA DA SERIES ANALOG/DIGITAL MIXED SIGNAL ARRAY FAMILY Supersedes June 1990 Edition The ULA DA Series is a family of 8 arrays developed to
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37bfi522
DD1770R
DS2349-2
dilmon 28
transistor DA 218
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Untitled
Abstract: No abstract text available
Text: S i GEC P L E S S E Y S I >1 I t O S I l ( I D ADVANCE INFORMATION l< S SP8854D 1.7GHz PARALLEL LOAD PROFESSIONAL SYNTHESISER The SP8854D is one of a family of parallel load synthesisers containing all the elements apart from the loop amplifier to fabricate a PLL synthesis loop. Other parts In the
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SP8854D
SP8854D
SP8852D
SP6655D
OP-27G
L7812CP
BB405B
40MHz
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR M EDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSU E 3 - NOVEMBER 1995 P A R T M A R K IN G D E T A IL - FMMT495 O_ §: 495 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L VALUE UNIT Collector-Base Voltage
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FMMT495
100nA
VctP150V
250mA,
500mA,
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transistor vergleichsliste
Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
Text: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G
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TAA812
Abstract: RS50
Text: HIGH GAIN OPERATIONAL AMPLIFIER TAA8I2 T E N T A T IV E D A T A The TAA812 is a g en eral purpose high gain operatio n al a m p lifie r on a m onolithic silico n chip. The device is fully com pensated w ith the addition of a single cap a cito r sta b ilisin g the c irc u it. Used a s a c o m p a rato r the
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TAA812
TAA812
RS50
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4742A
Abstract: 4735 zener zener 4733 4732A 4739A 4749A 4731A 1N4187
Text: o zener diodes diodes zener THOMSON-CSF Types Vzr/IZT* rZT/l2T* nom V max A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A B B B B B B B 3,3 3,6 3,9 4,3 4,7 5,1 5,6 6,2 6,8 7,5 8,2 9,1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39
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lm 2902 n
Abstract: No abstract text available
Text: SGS-THOMSON LM 2902 Id i LOW POWER QUAD OPERATIONAL AMPLIFIER LARGE VOLTAGE GAIN : 100 dB VERY LOW SUPPLY CURRENT/AMPLI 375 |jA LOW INPUT BIAS CURRENT : 20 nA LOW INPUT OFFSET VOLTAGE : 2 mV LOW INPUT OFFSET CURRENT : 2 nA WIDE POWER SUPPLY RANGE : . SINGLE SUPPLY : + 3 V TO + 30 V
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DIP14
CERDIP14
LM2902
lm 2902 n
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TFK 404
Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317
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20nttc*
10N12*
TFK 404
T1S58
BCI83L
Germanium diode OA 182
TFK diode
transistors 2n 945
v744
akai amplifier
tis62
BCI09
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PDF
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TDA7057AQ
Abstract: 2000 W BTL POWER AMPLIFIER CIRCUIT DIAGRAM TDA7057A TDA7057 DC VOLUME CONTROL MSA716
Text: Philips Sem iconductors O bjective specification 2 x 5 W stereo BTL audio output amplifier with DC volume control TDA7057AQ FEATURES GENERAL DESCRIPTION • DC volume control The TDA7057AQ is a stereo BTL output amplifier wih DC volume control in a 13-pin medium power package. The
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TDA7057AQ
TDA7057AQ
13-pin
MSA713
Julyi994
711Qfl2t,
Q062D34
711062b
2000 W BTL POWER AMPLIFIER CIRCUIT DIAGRAM
TDA7057A
TDA7057
DC VOLUME CONTROL
MSA716
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PDF
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10 35L V6
Abstract: 10 35L DIODE 74ALVC164245 74ALVC164245DGG 74ALVC164245DL diode 10 35L 35L DIODE
Text: Philips Semiconductors Product Specification 16-Bit dual supply translating transceiver; 3-state 74ALVC164245 FEATURES • QUICK REFERENCE DATA GND = 0 V; Tamb = 25°C; tr = t, < 2.5 ns Wide supply voltage range A port: 1.2 to 3.6 V B port: 1.2 to 5.5 V In accordance with JEDEC
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16-Bit
74ALVC164245
74ALVC164245
16-bit
10 35L V6
10 35L DIODE
74ALVC164245DGG
74ALVC164245DL
diode 10 35L
35L DIODE
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