MURATA NFM
Abstract: AEI cable audio amplifiers small signal audio FET murata chip suppression filter AUDIO AMPLIFIER tanaka material safety common mode power line dc filter for emi suppression DLW5BTN501SQ2 Transistor audio power amplifier application
Text: Murata’s Components Resolve Noises of Digital Audio Amplifier ICs N owadays, digital audio amplifier ICs are being used as audio amplifiers for digital audio-video A/V devices such as mobile phones, portable audio players, and flat-panel LCD TVs primarily
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tanaka gold wire 1.0 mil
Abstract: tanaka wire DM6030HK tanaka epoxy CMM-5-BD-000X TS3332LD Mimix Broadband tanaka au wire tanaka material safety tanaka bonding wire
Text: 2.0-6.0 GHz GaAs MMIC Amplifier CMM-5-BD January 2007 - Rev 15-Jan-07 Features Chip Diagram High Gain: 16.5 dB 18 dBm P1dB Small Size: 39x40 mils Directly Cascadable Self-Biased Single Power Supply General Description Mimix Broadband's CMM-5 is a 2 to 6 GHz GaAs MMIC
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15-Jan-07
39x40
CMM-5-BD-000X
tanaka gold wire 1.0 mil
tanaka wire
DM6030HK
tanaka epoxy
CMM-5-BD-000X
TS3332LD
Mimix Broadband
tanaka au wire
tanaka material safety
tanaka bonding wire
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tanaka bonding wire
Abstract: No abstract text available
Text: 2.0-6.0 GHz GaAs MMIC Amplifier CMM-5-BD January 2007 - Rev 15-Jan-07 Features Chip Diagram High Gain: 16.5 dB 18 dBm P1dB Small Size: 39x40 mils Directly Cascadable Self-Biased Single Power Supply General Description Mimix Broadband's CMM-5 is a 2 to 6 GHz GaAs MMIC
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15-Jan-07
39x40
CMM-5-BD-000X
tanaka bonding wire
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Untitled
Abstract: No abstract text available
Text: 34.5-38.0 GHz GaAs MMIC Power Amplifier P1056-BD Mar 2009 - Rev 04-Mar-09 Features Chip Device Layout High Efficiency Power Amplifier >35% PAE 13 dB Small Signal Gain +25.0 dBm P1dB Compression Point +26.0 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing
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P1056-BD
04-Mar-09
MIL-STD-883
XP1056-BD-EV1
XP1056-BD
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corrugated carton
Abstract: NA19020 FLC-13 FLCV-13 7 pin Inverter PWB ccfl Fujitsu inverter flcv-08 tanaka material safety data sheet inverter 4v to 12v SM02 lcd inverter ccfl transformer
Text: To : Specifications of INVERTER for FUJITSU LCD module FLCＶ-13 Approval Date： By ： This Product is designed, developed and manufactured as contemplated for general use, including without limitation, general office use, personal use, household use, and ordinary industrial use, but is not designed,
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FLC-13
FLCV-13]
P6015A
FLCV-13
LCD-00105
corrugated carton
NA19020
FLC-13
FLCV-13
7 pin Inverter PWB ccfl
Fujitsu inverter flcv-08
tanaka material safety data sheet
inverter 4v to 12v
SM02
lcd inverter ccfl transformer
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Untitled
Abstract: No abstract text available
Text: 7.0-14.0 GHz GaAs MMIC Low Noise Amplifier L1018-BD May 2010 - Rev 11-May-10 Features Self Bias Architecture Small Size 20.0 dB Small Signal Gain 1.7 dB Noise Figure +10.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883
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11-May-10
L1018-BD
MIL-STD-883
XL1018
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Untitled
Abstract: No abstract text available
Text: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier D1002-BD January 2010 - Rev 18-Jan-10 Features Chip Device Layout Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing
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D1002-BD
18-Jan-10
MIL-STD-883
rep1002-BD-000V
XD1002-BD-EV1
XD1002-BD
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L1000-BD
Abstract: XL1000-BD-EV1 XL1000-BD
Text: 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier L1000-BD January 2010 - Rev 18-Jan-10 Features Self Bias Architecture Small Size 3.0 or 5.0 V Operation 20.0 dB Small Signal Gain 2.0 dB Noise Figure +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing
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L1000-BD
18-Jan-10
MIL-STD-883
aL1000-BD-EV1
XL1000
L1000-BD
XL1000-BD-EV1
XL1000-BD
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D1002-BD
Abstract: DM6030HK TS3332LD XD1002-BD XD1002-BD-000V XD1002-BD-EV1 152.01
Text: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier D1002-BD January 2010 - Rev 18-Jan-10 Features Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing
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D1002-BD
18-Jan-10
MIL-STD-883
repeatabi02-BD-000V
XD1002-BD-EV1
XD1002-BD
D1002-BD
DM6030HK
TS3332LD
XD1002-BD-000V
XD1002-BD-EV1
152.01
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BD 139 140
Abstract: P1026 30SPA0553 DM6030HK P1026-BD TS3332LD XP1026-BD XP1026-BD-000V XP1026-BD-EV1 ID-2250
Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD January 2009 - Rev 19-Jan-09 Features Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing
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P1026-BD
19-Jan-09
MIL-STD-883
XP1026-BD-000V
XP1026-BD-EV1
XP1026-BD
BD 139 140
P1026
30SPA0553
DM6030HK
P1026-BD
TS3332LD
XP1026-BD-000V
XP1026-BD-EV1
ID-2250
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XL1002-BD
Abstract: 28LN3BA0050 L1002-BD V550
Text: 20.0-36.0 GHz GaAs MMIC Low Noise Amplifier L1002-BD January 2010 - Rev 09-Jan-10 Features Balanced Design Excellent Input/Output Match Self-biased Architecture 23.0 dB Small Signal Gain 2.6 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883
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L1002-BD
09-Jan-10
MIL-STD-883
provideL1002-BD-EV1
XL1002
XL1002-BD
28LN3BA0050
L1002-BD
V550
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Untitled
Abstract: No abstract text available
Text: 2.0-18.0 GHz GaAs MMIC Buffer Amplifier September 2009 - Rev 21-Sep-09 CMM4000-BD Features Chip Device Layout Self Bias Architecture On-Chip Drain Bias Coil/DC Blocking 8.5 dB Small Signal Gain 4.5 dB Noise Figure +19.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883
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21-Sep-09
CMM4000-BD
MIL-STD-883
viaD-000V
PB-CMM4000-BD-0000
CMM4000-BD
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XD1001-BD-EV1
Abstract: DM6030HK TS3332LD XD1001-BD XD1001-BD-000V XD1001
Text: 18.0-50.0 GHz GaAs MMIC Distributed Amplifier D1001-BD January 2010 - Rev 11-Jan-10 Features Ultra Wide Band Driver Amplifier Fiber Optic Modulator Driver 17.0 dB Small Signal Gain 5.0 dB Noise Figure 30 dB Gain Control +15.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing
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D1001-BD
11-Jan-10
MIL-STD-883
l01-BD-000V
XD1001-BD-EV1
XD1001-BD
XD1001-BD-EV1
DM6030HK
TS3332LD
XD1001-BD-000V
XD1001
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CMM3020-BD-000V
Abstract: CMM3020-BD DM6030HK M326 TS3332LD
Text: 30.0 kHz-20.0 GHz GaAs MMIC Distributed Amplifier CMM3020-BD May 2010 - Rev 08-May-10 Features Chip Device Layout Ultra Wide Band Driver Amplifier Low Gain Ripple Positive Gain Slope 9.0 dB Small Signal Gain +23.0 dBm P1dB Compression Point +35.0 dBm Third Order Intercept
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Hz-20
CMM3020-BD
08-May-10
MIL-STD-883
-BD-0000
CMM3020-BD
CMM3020-BD-000V
DM6030HK
M326
TS3332LD
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CMM2030-BD
Abstract: CMM2030 DM6030HK TS3332LD DEGC120
Text: 30.0 kHz-30.0 GHz GaAs MMIC Distributed Amplifier CMM2030-BD May 2010 - Rev 07-May-10 Features Chip Device Layout Ultra Wide Band Driver Amplifier Low Gain Ripple Positive Gain Slope 12.0 dB Small Signal Gain +16.0 dBm P1dB Compression Point +27.0 dBm Third Order Intercept
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Hz-30
CMM2030-BD
07-May-10
MIL-STD-883
a-BD-0000
CMM2030-BD
CMM2030
DM6030HK
TS3332LD
DEGC120
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CMM4000
Abstract: CMM4000-BD CMM4000-BD-000V DM6030HK M393 TS3332LD tanaka material safety
Text: 2.0-18.0 GHz GaAs MMIC Buffer Amplifier CMM4000-BD September 2009 - Rev 21-Sep-09 Features Self Bias Architecture On-Chip Drain Bias Coil/DC Blocking 8.5 dB Small Signal Gain 4.5 dB Noise Figure +19.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883
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CMM4000-BD
21-Sep-09
MIL-STD-883
holesD-000V
PB-CMM4000-BD-0000
CMM4000-BD
CMM4000
CMM4000-BD-000V
DM6030HK
M393
TS3332LD
tanaka material safety
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nl8048bc19-02
Abstract: NL8048BC19 THC63LVDM83R lcd screen LVDS connector 40 pins application of pick place robot nl8048 LVDS 30 pin hirose LVDS lvds 20 pin lcd panel NEC lcd led backlight JAE LVDS 30 PIN
Text: TFT COLOR LCD MODULE NL8048BC19-02 18cm 7.0 Type WVGA LVDS interface (1port) PRELIMINARY DATA SHEET DOD-PP-0399 (2nd edition) This PRELIMINARY DATA SHEET is updated document from DOD-PP-0359(1). All information is subject to change without notice. Please confirm the sales representative before
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NL8048BC19-02
DOD-PP-0399
DOD-PP-0359
nl8048bc19-02
NL8048BC19
THC63LVDM83R
lcd screen LVDS connector 40 pins
application of pick place robot
nl8048
LVDS 30 pin hirose LVDS
lvds 20 pin lcd panel
NEC lcd led backlight
JAE LVDS 30 PIN
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Untitled
Abstract: No abstract text available
Text: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100-BD February 2010 - Rev-05-Feb-10 Features Chip Device Layout Self Bias Architecture 17.0 dB Small Signal Gain 3.5 dB Noise Figure +16.0 dBm P1dB Compression Point 100% Commercial-Level Visual Inspection Using
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CMM1100-BD
Rev-05-Feb-10
Mil-Std-883
CMM1100-BD-000W
PB-CMM1100-BD-0000
CMM1100-BD
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28LN2BA0047
Abstract: XL1001-BD L1001-BD tanaka material safety
Text: 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier L1001-BD January 2010 - Rev 10-Jan-10 Features Balanced Design Excellent Input/Output Match Self-biased Architecture 14.0 dB Small Signal Gain 2.5 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883
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L1001-BD
10-Jan-10
MIL-STD-883
aL1001-BD-EV1
XL1001
28LN2BA0047
XL1001-BD
L1001-BD
tanaka material safety
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TEXAS 7697
Abstract: CMM1100 CMM1100-BD DM6030HK PB-CMM1100-BD-0000 TS3332LD
Text: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100-BD February 2010 - Rev-05-Feb-10 Features Self Bias Architecture 17.0 dB Small Signal Gain 3.5 dB Noise Figure +16.0 dBm P1dB Compression Point 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010
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CMM1100-BD
Rev-05-Feb-10
Mil-Std-883
CMM1100-BD-000W
PB-CMM1100-BD-0000
CMM1100-BD
TEXAS 7697
CMM1100
DM6030HK
PB-CMM1100-BD-0000
TS3332LD
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XD9001
Abstract: D1008-BD XD1008-BD-000V mmic distributed amplifier XD1008 DM6030HK TS3332LD
Text: 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier March 2009 - Rev 19-Mar-09 D1008-BD Features Chip Device Layout 15 dB Gain 22.5 dBm P1dB at 22 GHz 4.5 dB Noise Figure at 26 GHz Unconditional Stability over Temperature Range 100% On-Wafer RF, DC and Output Power Testing
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19-Mar-09
D1008-BD
MIL-STD-883
XD1008
XD9001.
XD9001
D1008-BD
XD1008-BD-000V
mmic distributed amplifier
DM6030HK
TS3332LD
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Untitled
Abstract: No abstract text available
Text: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100-BD September 2009 - Rev 22-Sep-09 Features Self Bias Architecture 17.0 dB Small Signal Gain 3.5 dB Noise Figure +16.0 dBm P1dB Compression Point 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010
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CMM1100-BD
22-Sep-09
Mil-Std-883
metalD-000V
PB-CMM1100-BD-0000
CMM1100-BD
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NA19020-C953
Abstract: NA19020 C953 FLC48SXC8V-02 FI-X30M FLCV-13 SS26E3935N8365C3273111 FLCL-20 KOWA CORP DS90CF386
Text: To : Specification of FUJITSU TFT-LCD module FLC48SXC8V-02 Approval Date： By ： This Product is designed, developed and manufactured as contemplated for general use, including without limitation, general office use, personal use, household use, and ordinary industrial use, but is not designed,
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FLC48SXC8V-02
NA19020-C953
NA19020
C953
FLC48SXC8V-02
FI-X30M
FLCV-13
SS26E3935N8365C3273111
FLCL-20
KOWA CORP
DS90CF386
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ROHM resistor
Abstract: MCR03 TSZ22111-03 TSZ22111-04 09001F
Text: TSZ22111-03 noH m TYPE PRODUCTS FIXED THICK FILM CHIP RESISTORS PAGE M C R 0 3 Series 2/13 < Specifications Precautions and Prohibitions > Safety Precautions 1) The products are designed and produced for application in ordinary electronic equipment (AV equipment,
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MCR03
MAY/14/2003
MCR03N-IA
TSZ22111-03
ET-7200A
000pcs
TSZ22111-04
ROHM resistor
09001F
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