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    TANAKA WIRE 15 MILS Search Results

    TANAKA WIRE 15 MILS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MP-5XRJ11PPXS-014 Amphenol Cables on Demand Amphenol MP-5XRJ11PPXS-014 Flat Silver Satin Modular Crossed wiring Cable, RJ11 / RJ11 14ft Datasheet
    MP-64RJ4528GB-003 Amphenol Cables on Demand Amphenol MP-64RJ4528GB-003 Slim Category-6 (Thin CAT6) UTP 28-AWG Network Patch Cable (550-MHz) with Snagless RJ45 Connectors - Blue 3ft Datasheet
    MP-64RJ4528GG-014 Amphenol Cables on Demand Amphenol MP-64RJ4528GG-014 Slim Category-6 (Thin CAT6) UTP 28-AWG Network Patch Cable (550-MHz) with Snagless RJ45 Connectors - Green 14ft Datasheet
    MP-64RJ4528GR-007 Amphenol Cables on Demand Amphenol MP-64RJ4528GR-007 Slim Category-6 (Thin CAT6) UTP 28-AWG Network Patch Cable (550-MHz) with Snagless RJ45 Connectors - Red 7ft Datasheet
    MP-64RJ4528GY-003 Amphenol Cables on Demand Amphenol MP-64RJ4528GY-003 Slim Category-6 (Thin CAT6) UTP 28-AWG Network Patch Cable (550-MHz) with Snagless RJ45 Connectors - Yellow 3ft Datasheet

    TANAKA WIRE 15 MILS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    tanaka gold wire

    Abstract: tanaka wire tanaka bonding wire tanaka GPG wire tanaka wire 15 mils tanaka EN-4088Z SN74LS244 SN74LS244DW
    Text: TEXAS INSTRUMENTS Qualification Notification of the Change from 0.95 mil Conventional Gold Bonding Wire to 0.80 mil Tanaka GPG Gold Alloy Bonding Wire for SLL Product June 23, 1997 Abstract Texas Instruments Standard Linear and Logic Products SLL has qualified the 0.80 mil Tanaka GPG


    Original     		S01-06486 S01-06563 tanaka gold wire tanaka wire tanaka bonding wire tanaka GPG wire tanaka wire 15 mils tanaka EN-4088Z SN74LS244 SN74LS244DW PDF

    tanaka wire

    Abstract: MAC-3070 shinetsu tanaka au wire EME-6730UC Ablestik KMC-184 g991 EME-6730 tanaka wire 10 mils
    Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN DATE: November 18, 1999 MEANS OF DISTINGUISHING CHANGED DEVICES: PCN #: G9911-05 Product Affected: All Platic packages Product Mark Back Mark Manufacturing Location Affected: ALL


    Original     		G9911-05 KMC184 KMC184VA EME-6730 EME-9730 Mil-Std-883, tanaka wire MAC-3070 shinetsu tanaka au wire EME-6730UC Ablestik KMC-184 g991 tanaka wire 10 mils PDF

    ph44

    Abstract: Tanaka GL2 tanaka wire Ablebond 8340 tanaka au wire tanaka epoxy Compound c7025 Ablebond tanaka C7025
    Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN DATE: November 18, 1999 MEANS OF DISTINGUISHING CHANGED DEVICES: PCN #: G9911-04 Product Affected: All Plastic packages Product Mark Back Mark


    Original     		G9911-04 Mil-Std-883, S-7390) S-7383 ph44 Tanaka GL2 tanaka wire Ablebond 8340 tanaka au wire tanaka epoxy Compound c7025 Ablebond tanaka C7025 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.5-6.0/5.0-12.0 GHz GaAs MMIC Active Doubler X1002 December 2005 - Rev 08-Dec-05 Features Chip Device Layout Compact, Low-Cost Design Octave Bandwidth Operation +16 dBm Output Power -35 dBc Fundamental Leakage +5.0V, 125mA Bias Supply 100% On-Wafer RF, DC and Output Power Testing


    Original     		08-Dec-05 X1002 125mA MIL-STD-883 PDF

    tanaka TS3332LD epoxy

    Abstract: XP1073-BD P1073-BD ka-band bare
    Text: 33-37 GHz GaAs MMIC Power Amplifier P1073-BD July 2008 - Rev 14-Jul-08 Features Ka-Band 6.5 W Power Amplifier 22 dB Small Signal Gain 37 - 38 dBm Pulsed Saturated Output Power Up to 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing


    Original     		14-Jul-08 P1073-BD MIL-STD-883 XP1073-BD-000V tanaka TS3332LD epoxy XP1073-BD ka-band bare PDF

    XP1072-BD

    Abstract: ka-band bare xp1072-bd-000v P1072-BD XP1072
    Text: 33-37 GHz GaAs MMIC Power Amplifier P1072-BD July 2008 - Rev 14-Jul-08 Features Ka-Band 4 W Power Amplifier 22 dB Small Signal Gain 35 - 36 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


    Original     		14-Jul-08 P1072-BD MIL-STD-883 XP1072-BD-000V XP1072-BD ka-band bare xp1072-bd-000v XP1072 PDF

    P1014

    Abstract: DM6030HK TS3332LD XP1006 XP1014 XP1014-BD-000V XP1006 bonding
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier s 18 P1014-BD August 2007 - Rev 03-Aug-07 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		P1014-BD 03-Aug-07 XP1006 MIL-STD-883 XP1014 I0005129 XP1014-BD-000V XP1014-BD-EV1 XP1014 P1014 DM6030HK TS3332LD XP1014-BD-000V XP1006 bonding PDF

    DM6030HK

    Abstract: TS3332LD XX1002 XX1002-BD-000V XX1002-BD-EV1 tanaka epoxy
    Text: 2.5-6.0/5.0-12.0 GHz GaAs MMIC Active Doubler X1002-BD July 2007 - Rev 27-Jul-07 Features Compact, Low-Cost Design Octave Bandwidth Operation +16 dBm Output Power -35 dBc Fundamental Leakage +5.0V, 125mA Bias Supply 100% On-Wafer RF, DC and Output Power Testing


    Original     		X1002-BD 27-Jul-07 125mA MIL-STD-883 XX1002-BD-000V XX1002-BD-EV1 XX1002 DM6030HK TS3332LD XX1002-BD-000V XX1002-BD-EV1 tanaka epoxy PDF

    ts333

    Abstract: tanaka gold wire current tanaka gold wire DM6030HK 8SDV0500 TS3332LD XE1000-BD XE1000-BD-000V XE1000-BD-EV1 DM6030HK-Pt
    Text: 2.0-16.0 GHz GaAs MMIC Frequency Divider April 2007 - Rev 17-Apr-07 E1000-BD Features Divide-by-Four +5.0 dBm Output Power -30 dBc Fundamental Leakage Single-ended or Differential Input & Output 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


    Original     		17-Apr-07 E1000-BD MIL-STD-883 XE1000-BD XE1000-BD-000V XE1000-BD-EV1 XE1000 ts333 tanaka gold wire current tanaka gold wire DM6030HK 8SDV0500 TS3332LD XE1000-BD XE1000-BD-000V XE1000-BD-EV1 DM6030HK-Pt PDF

    M1004-BD

    Abstract: 26BAM0545 DM6030HK TS3332LD XM1004-BD XM1004-BD-000V XM1004-BD-EV1
    Text: 20.0-38.0 GHz GaAs MMIC Balanced Mixer February 2007 - Rev 26-Feb-07 M1004-BD Features Fundamental Balanced Mixer 8.0 dB Conversion Loss +25.0 dBm Input Third Order Intercept IIP3 35.0 dB LO to RF Isolation 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883


    Original     		26-Feb-07 M1004-BD MIL-STD-883 XM1004-BD XM1004-BD-000V XM1004-BD-EV1 XM1004-BD M1004-BD 26BAM0545 DM6030HK TS3332LD XM1004-BD-000V XM1004-BD-EV1 PDF

    DM6030HK

    Abstract: TS3332LD XX1002 XX1002-BD XX1002-BD-000V XX1002-BD-EV1
    Text: 2.5-6.0/5.0-12.0 GHz GaAs MMIC Active Doubler X1002-BD July 2008 - Rev 30-Jul-08 Features Compact, Low-Cost Design Octave Bandwidth Operation +16 dBm Output Power -35 dBc Fundamental Leakage +5.0V, 125mA Bias Supply 100% On-Wafer RF, DC and Output Power Testing


    Original     		X1002-BD 30-Jul-08 125mA MIL-STD-883 XX1002-BD-000V XX1002-BD-EV1 XX1002 DM6030HK TS3332LD XX1002-BD XX1002-BD-000V XX1002-BD-EV1 PDF

    xp1014

    Abstract: P1014-BD
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier s 18 P1014-BD November 2008 - Rev 14-Nov-08 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		14-Nov-08 P1014-BD XP1014 I0005129 XP1006 MIL-STD-883 XP1014-BD-000V XP1014-BD-EV1 PDF

    180 Degree hybrid

    Abstract: 180 Degree broadband hybrid 26BAM0545 DM6030HK M1004-BD TS3332LD XM1004-BD XM1004-BD-000V XM1004-BD-EV1
    Text: 20.0-38.0 GHz GaAs MMIC Balanced Mixer February 2007 - Rev 26-Feb-07 M1004-BD Features Fundamental Balanced Mixer 8.0 dB Conversion Loss +25.0 dBm Input Third Order Intercept IIP3 35.0 dB LO to RF Isolation 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883


    Original     		26-Feb-07 M1004-BD MIL-STD-883 XM1004-BD XM1004-BD-000V XM1004-BD-EV1 XM1004-BD 180 Degree hybrid 180 Degree broadband hybrid 26BAM0545 DM6030HK M1004-BD TS3332LD XM1004-BD-000V XM1004-BD-EV1 PDF

    MAAP-015036

    Abstract: No abstract text available
    Text: MAAP-015036 Power Amplifier, 15 W 8.5 - 10.5 GHz Rev. V1 Features Functional Schematic •       15 W Power Amplifier 42 dBm Saturated Pulsed Output Power 17 dB Large Signal Gain PSAT >40% Power Added Efficiency Dual Sided Bias Architecture


    Original     		MAAP-015036 MIL-STD-883 MAAP-015036 PDF

    p1014

    Abstract: No abstract text available
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 November 2006 - Rev 01-Nov-06 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit


    Original     		01-Nov-06 APH478 P1014 XP1014 I0005129 XP1006 MIL-STD-883 XP1014-BD-000W XP1014-BD-000V XP1014-BD-EV1 PDF

    Q1005-BD

    Abstract: 14OSC0501 DM6030HK TS3332LD XQ1005-BD XQ1005-BD-000V XQ1005-BD-EV1
    Text: 14.2-15.2 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1005-BD On-Chip Prescaler +6.0 dBm Output Power -88 dBc/Hz @ 100KHz Phase Noise -40 dBc Harmonic Suppression 110mA @ 4.0V Bias Supply 100% On-Wafer, DC and Output Power Testing


    Original     		17-Apr-07 Q1005-BD 100KHz 110mA MIL-STD-883 XQ1005-BD XQ1005-BD-000V XQ1005-BD-EV1 XQ1005 Q1005-BD 14OSC0501 DM6030HK TS3332LD XQ1005-BD XQ1005-BD-000V XQ1005-BD-EV1 PDF

    S1000-BD

    Abstract: DM6030HK TS3332LD XS1000 XS1000-BD-000V XS1000-BD-EV1 Mimix phase shifter
    Text: 7.0-13.0 GHz GaAs MMIC 6-Bit Phase Shifter S1000-BD August 2007 - Rev 21-Aug-07 Features 6 Bit Phase Shifter Digital Control 0 – 3.3 V LSB = 5.625 ° 25 dBm P1dB Input Compression 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883


    Original     		S1000-BD 21-Aug-07 MIL-STD-883 XS1000-BD-000V XS1000-BD-EV1 XS1000 S1000-BD DM6030HK TS3332LD XS1000-BD-000V XS1000-BD-EV1 Mimix phase shifter PDF

    Q1005-BD

    Abstract: vco mimix
    Text: 14.2-15.2 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1005-BD On-Chip Prescaler +6.0 dBm Output Power -88 dBc/Hz @ 100KHz Phase Noise -40 dBc Harmonic Suppression 110mA @ 4.0V Bias Supply 100% On-Wafer, DC and Output Power Testing


    Original     		17-Apr-07 Q1005-BD 100KHz 110mA MIL-STD-883 XQ1005-BD XQ1005-BD-000V XQ1005-BD-EV1 XQ1005 vco mimix PDF

    PB-CMM1100-BD-0000

    Abstract: tanaka epoxy tanaka TS3332LD epoxy transistor BD 140 CMM1100-BD CMM1100-BD-000V DM6030HK TS3332LD
    Text: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100-BD September 2008 - Rev 28-Sep-08 Features Self Bias Architecture 16.0 dB Small Signal Gain 3.8 dB Noise Figure +15.0 dBm P1dB Compression Point 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010


    Original     		CMM1100-BD 28-Sep-08 Mil-Std-883 metallizaD-000V PB-CMM1100-BD-0000 CMM1100-BD PB-CMM1100-BD-0000 tanaka epoxy tanaka TS3332LD epoxy transistor BD 140 CMM1100-BD-000V DM6030HK TS3332LD PDF

    XA1000-BD-EV1

    Abstract: DM6030HK TS3332LD XA1000 XA1000-BD-000V xa1000-bd A1000-BD
    Text: DC-18.0 GHz GaAs MMIC 5-Bit Digital Attenuator A1000-BD August 2007 - Rev 21-Aug-07 Features 5-Bit Attenuator 27.9 dB Attenuation Range 24 dBm P1dB Input Compression 0.9 dB LSB Digital Control 0.0 to 3.3 V 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883


    Original     		DC-18 A1000-BD 21-Aug-07 MIL-STD-883 XA1000-BD-000V XA1000-BD-EV1 XA1000 XA1000-BD-EV1 DM6030HK TS3332LD XA1000-BD-000V xa1000-bd A1000-BD PDF

    PB-CMM1100-BD-0000

    Abstract: TS3332LD CMM1100-BD CMM1100-BD-000V DM6030HK
    Text: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100-BD April 2007 - Rev 30-Apr-07 Features Self Bias Architecture 16.0 dB Small Signal Gain 3.8 dB Noise Figure +15.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout


    Original     		CMM1100-BD 30-Apr-07 MIL-STD-883 CMM1100-BD-000V PB-CMM1100-BD-0000 CMM1100-BD PB-CMM1100-BD-0000 TS3332LD CMM1100-BD-000V DM6030HK PDF

    tanaka TS3332LD epoxy

    Abstract: tanaka gold wire tanaka gold wire data sheet tanaka wire tanaka epoxy tanaka TS3332LD tanaka wire 1.4 CMM0016-BD CMM0016-BD-000V DM6030HK
    Text: 2.0-22.0 GHz GaAs MMIC Power Amplifier CMM0016-BD March 2008 - Rev 04-Mar-08 Features Chip Device Layout Ultra Wide Band Power Amplifier Compact Size/Self Bias Architecture Positive Gain Slope 10.0 dB Small Signal Gain +30.0 dBm P1dB Compression Point +39.0 dBm Third Order Intercept


    Original     		CMM0016-BD 04-Mar-08 MIL-STD-883 providM0016-BD-0000 CMM0016-BD tanaka TS3332LD epoxy tanaka gold wire tanaka gold wire data sheet tanaka wire tanaka epoxy tanaka TS3332LD tanaka wire 1.4 CMM0016-BD-000V DM6030HK PDF

    CMM0016-BD

    Abstract: CMM0016 CMM0016-BD-000V DM6030HK PB-CMM0016-BD-0000 TS3332LD
    Text: 2.0-22.0 GHz GaAs MMIC Power Amplifier CMM0016-BD March 2008 - Rev 04-Mar-08 Features Chip Device Layout Ultra Wide Band Power Amplifier Compact Size/Self Bias Architecture Positive Gain Slope 10.0 dB Small Signal Gain +30.0 dBm P1dB Compression Point +39.0 dBm Third Order Intercept


    Original     		CMM0016-BD 04-Mar-08 MIL-STD-883 andM0016-BD-0000 CMM0016-BD CMM0016 CMM0016-BD-000V DM6030HK PB-CMM0016-BD-0000 TS3332LD PDF

    Mimix A1000

    Abstract: No abstract text available
    Text: DC-18.0 GHz GaAs MMIC 5-Bit Digital Attenuator A1000 April 2006 - Rev 24-Apr-06 Features 5-Bit Attenuator 27.9 dB Attenuation Range 24 dBm P1dB Input Compression 0.9 dB LSB Digital Control 0.0 to 3.3 V 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883


    Original     		DC-18 24-Apr-06 A1000 MIL-STD-883 Mimix A1000 PDF