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Text: Page 16 Tantalum Nitride Film Chip Resistors SEI Type TTF Tantalum Nitride Element Precision Tolerances to ±0.02% Temperature Coefficients o f ±10ppm/°C Wide R-value Range Available in 1206, 0805 and 0603 Sizes PERFORMANCE CHARACTERISTICS TESTED PER MIL-STD-202
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10ppm/
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Untitled
Abstract: No abstract text available
Text: Standard Networks/Tantalum on Silicon Standard Cell "SC" Series Features Electro-Films, Inc. has developed a series of tantalum/nitride on silicon resistor networks composed of standard cells that permit the production of networks in three standard configurations: isolated, series, and
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TA 33
Abstract: No abstract text available
Text: TA 33 Vishay Sfernice Dual Value Chip Resistors, Center Tap FEATURES • Center tap feature • Resistor material: self-passivating Tantalum Nitride RoHS COMPLIANT • Silicon substrate for good power dissipation • Low cost Actual Size These tantalum chips combine excellent stability 0.07 %
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18-Jul-08
TA 33
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Untitled
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Text: Standard Networks/Tantalum on Silicon Standard Cell “SC” Series Features Electro-Films, Inc. has developed a series of tantalum/nitride on silicon resistor networks composed of standard cells that permit the production of networks in three standard configurations: isolated, series, and
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tantalum nitride
Abstract: TA 33 TA33-5K2F25KD0016
Text: TA 33 Vishay Sfernice Dual Value Chip Resistors, Center Tap FEATURES • Center tap feature • Resistor material: self-passivating Tantalum Nitride • Silicon substrate for good power dissipation • Low cost • Wirebondable Actual Size These tantalum chips combine excellent stability 0.07 %
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TA 33
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TA 33
Abstract: TA33-5K2F25KD0016
Text: TA 33 Vishay Sfernice Dual Value Chip Resistors, Center Tap FEATURES • Center tap feature • Resistor material: self-passivating Tantalum Nitride RoHS COMPLIANT • Silicon substrate for good power dissipation • Low cost Actual Size These tantalum chips combine excellent stability 0.07 %
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08-Apr-05
TA 33
TA33-5K2F25KD0016
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TA 33
Abstract: No abstract text available
Text: TA 33 Vishay Sfernice Dual Value Chip Resistors, Center Tap FEATURES • Center tap feature • Resistor material: self-passivating Tantalum Nitride RoHS COMPLIANT • Silicon substrate for good power dissipation • Low cost Actual Size These tantalum chips combine excellent stability 0.07 %
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Untitled
Abstract: No abstract text available
Text: Page 16 Tantalum Nitride Film Chip Resistors SEI Type TTF • • • • • Tantalum Nitride Element Precision Tolerances to ±0.02% Temperature Coefficients of ±10ppm/°C Wide R-value Range Available in 1206, 0805 and 0603 Sizes PERFORMANCE CHARACTERISTICS TESTED PER MIL-STD-202
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MIL-STD-202)
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15ppm,
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Untitled
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Text: TA 33T Vishay Thin Film Dual Value, Chip Resistor Center Tap FEATURES • Center tap feature • Resistor material: self-passivating Tantalum Nitride • Silicon substrate for good power dissipation • Low cost Actual Size TYPICAL PERFORMANCE These tantalum chips combine excellent stability with great power handling
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Text: N PT-N M S RESISTO RS & TERM INATIO NS S E R IE S N PR-N M S HIGH POWER TANTALUM NITRIDE FILM FEATURES: • Excellent Long Term Stability • Low Cost • Excellent Moisture Resistance GENERAL INFORMATION: These high power devices feature tantalum film resistors for improved
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Text: Tantalum on Silicon Chip Resistors SFX: High Density/High Value The SFX series are single, high value, 1 megQ to 20 megQ, tantalum nitride on silicon chip resistors in a 40 x 40 mil. size. The capability for extremely fine-line etching on the smooth silicon surface allows the defin
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Text: Tantalum on Silicon Chip Resistors SFX: High Density/High Value General The SFX series are single, high value, 1 megQ to 20 megQ, tantalum nitride on silicon chip resistors in a 40 x 40 mil. size. The capability for extremely fine-line etching on the smooth silicon surface allows the defin
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Mil-Std-883)
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Text: V i s h ay I n t e r t e c h n o l o g y, I n c . THIN FILM CHIP RESISTORS Moisture-Resistant Tantalum Nitride Resistive Film PTN Series Moisture-Resistant, Tantalum Nitride Precision Thin Film Surface-Mount Chip Resistor Key Benefits • • • • • •
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Text: HIGH FREQUENCY CHIP RESISTORS AND TERMINATIONS SPECIFICATIONS: Substrate Material: Resistive Material: Termination Material: Frequency Range: Resistance Values: Alumina Tantalum nitride, thin film Platinum gold, thick film DC- 18 GHz 5OQ and 100Q standard
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SC0014
SC9014
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Text: T ANTALUM NITRIDE Thin Film Metallized Substrates, Customized Networks & Etched Circuits FEATURES METALLIZATION SPECIFICATIONS • • • • • • • • Circuit Side, Tantalum Nitride: High Film Adhesion Consistent Sheet Resistance Traceability Stability
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Novel Passivation Ledge Monitor in an InGaP HBT Process
Abstract: AlGaAs resistivity
Text: Novel Passivation Ledge Monitor in an InGaP HBT Process Cristian Cismaru and Peter J. Zampardi Skyworks Solutions, Inc., 2427 Hillcrest Drive, Newbury Park, CA 91320 [email protected], 805.480.4663 Keywords: HBT, InGaP ledge, capacitor, Tantalum Nitride
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sc9014
Abstract: No abstract text available
Text: TERMINATIONS AND RESISTORS HIGH FREQUENCY CHIP RESISTORS AND TERMINATIONS Substrate Material: Resistive Material: Termination Material: Frequency Range: Resistance Values: Alumina Tantalum nitride, thin film Platinum gold, thick film DC - 18 GHz 50Q and 100Q standard
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SC0014
SC9014
SC0017
SC9017
SC0028
SC9028
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Untitled
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Text: TANTALUM NITRIDE ON SILICON NEW PRODUCT Bussed Circuit Thin Film Resistor Networks SCHEMATIC Bussed Resistor Network N 4 N/2 1 ELECTRICAL Standard Resistance Range, Ohms Operating Temperature Range Interlead Capacitance Insulation Resistance Maximum Operating Voltage
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100Vdc
-25dB
UL-94V-O
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Text: TANTALUM NITRIDE ON SILICON NEW PRODUCT Isolated Circuit Thin Film Resistor Networks SCHEMATIC Isolated Resistor Elements N 4 1 N/2 ELECTRICAL Standard Resistance Range, Ohms Operating Temperature Range Interlead Capacitance Insulation Resistance Maximum Operating Voltage
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100Vdc
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Abstract: No abstract text available
Text: TA 33 www.vishay.com Vishay Sfernice Wirebondable Dual Value Thin Film Chip Resistor Networks, Center Tap FEATURES • Center tap feature • Resistor material: Self-passivating Tantalum nitride • Silicon substrate for good power dissipation • Wirebondable
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2002/95/EC
11-Mar-11
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Abstract: No abstract text available
Text: TANTALUM NITRIDE ON SILICON NEW PRODUCT Isolated Circuit Thin Film Resistor Networks SCHEMATIC ELECTRICAL Standard Resistance Range, Ohms 10 to 100K Operating Temperature Range -55°C to +125°C Interlead Capacitance <2pF Insulation Resistance >10,000 Megohms
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Text: TA 33 www.vishay.com Vishay Sfernice Wirebondable Dual Value Thin Film Chip Resistor Networks, Center Tap FEATURES • Center tap feature • Resistor material: Self-passivating Tantalum nitride • Silicon substrate for good power dissipation • Wirebondable
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2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: TaNFilm Small Outline Surface Mount Resistor Network IRC Advanced Film Division Ultra precision tantalum nitride resistance element on high purity alumina GUB Series Rugged, molded construction Compliant leads to compensate for thermal expansion and contractions
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Text: TANFILM 8900 RESISTOR NETWORKS Self passivation layer and coating system provides environmental protection FLAT PACK Digitally marked ceramic lid to substrate per MIL-PRF-83401 Sputtered tantalum nitride resistance element, laser trimmed to value, tolerance
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MIL-PRF-83401
MIL-R-83401/03,
MIL-R-83401M
MIL-R-83401K
MIL-R-83401H
RZ150
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