Untitled
Abstract: No abstract text available
Text: TB1S~TB10S MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 1.0 Ampers Recongnized File #E139973 FEATURES 0.028 0.7 0.023(0.6) • Glass passivated chip junciton • Body Thick Very Thin <1.5mm • Low Forward Voltage Drop
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TB10S
E139973
2002/95/EC
MIL-STD-750,
2011-REV
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TB8S-05
Abstract: TB1S TB8S PANJIT
Text: TB1S-05~TB8S-05 MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100 ~ 800 Volts CURRENT 0.5 Ampers MICRO DIP / TDI Unit：inch mm Recongnized File #E139973 FEATURES 0.028(0.7) 0.023(0.6) • Glass passivated chip junciton • Body Thick Very Thin <1.5mm
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TB1S-05
TB8S-05
E139973
2010-REV
TB8S-05
TB1S
TB8S PANJIT
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Untitled
Abstract: No abstract text available
Text: TB1S~TB10S MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 1.0 Ampers Recongnized File #E139973 FEATURES 0.028 0.7 0.023(0.6) • Glass passivated chip junciton • Body Thick Very Thin <1.5mm • Low Forward Voltage Drop
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TB10S
E139973
2002/95/EC
IEC61249
2011-REV
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marking TA1S
Abstract: TA1S SMD TA1S SMD Transistor Marking Code F3
Text: C A L I B E R TA1S SMD , TB1S (Thru Hole) Series Lead-Free RoHS Compliant Electronics Inc. PART NUMBERING GUIDE SineWave (VC) TCXO Oscillator Revision: 1996-C TABLE 1 Operating Temperature TB1S 3 20 C V 10.000MHz Package TA1S = SMD TB1S = Thru Hole Pin One Connection
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1996-C
000MHz
000MHz
marking TA1S
TA1S
SMD TA1S
SMD Transistor Marking Code F3
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Untitled
Abstract: No abstract text available
Text: TB1S~TB10S MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 1.0 Ampers TDI MICRO DIP Unit : inch(mm) Recongnized File #E139973 0.028(0.7) 0.023(0.6) FEATURES • Save space on printed circuit boards ~ - + • Body Thick Very Thin <1.5mm
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PDF
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TB10S
E139973
2002/95/EC
MIL-STD-750,
2010-REV
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Untitled
Abstract: No abstract text available
Text: TB1S-08~TB10S-08 MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 0.8 Ampers TDI MICRO DIP Unit : inch(mm) Recongnized File #E139973 0.028(0.7) 0.023(0.6) FEATURES • Save space on printed circuit boards ~
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TB1S-08
TB10S-08
E139973
2002/95/EC
MIL-STD-750,
2010-REV
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TB8S
Abstract: No abstract text available
Text: TB1S-05~TB8S-05 MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100 ~ 800 Volts CURRENT TDI MICRO DIP 0.5 Ampers Unit : inch(mm) FEATURES 0.028(0.7) 0.023(0.6) • Glass passivated chip junciton ~ • Body Thick Very Thin <1.5mm
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PDF
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TB1S-05
TB8S-05
2002/95/EC
MIL-STD-750,
2010-REV
TB8S
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TB10S
Abstract: No abstract text available
Text: TB1S~TB10S MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 1.0 Amperes Recongnized File #E139973 FEATURES 0.028 0.7 0.023(0.6) • Glass passivated chip junciton • Body Thick Very Thin <1.5mm • Low Forward Voltage Drop
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PDF
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TB10S
E139973
2002/95/EC
IEC61249
2011-REV
RB500V-40
TB10S
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Untitled
Abstract: No abstract text available
Text: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package TB-S Package Weight mg 100 Product Group Type No. TB1S – TB10S Solder Alloy Leadframe Copper Alloy Plating Matte Tin Encapsulation Tolerance Material Doped Silicon* Die Attach
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TB10S
2011/65/EU.
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TB10S
Abstract: No abstract text available
Text: TB1S~TB10S MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 1.0 Ampers TDI MICRO DIP Unit : inch(mm) Recongnized File #E139973 0.028(0.7) 0.023(0.6) FEATURES • Save space on printed circuit boards ~ - + • Body Thick Very Thin <1.5mm
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Original
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PDF
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TB10S
E139973
2002/95/EC
2010-REV
TB10S
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Untitled
Abstract: No abstract text available
Text: TB1S~TB10S MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 1 Ampers Recongnized File #E139973 FEATURES 0.028 0.7 0.023(0.6) • Glass passivated chip junciton • Ultra Thin Profile Package for Space Constrained Utilization
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TB10S
E139973
2011/65/EU
2013-REV
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Untitled
Abstract: No abstract text available
Text: TB1S – TB10S 1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER WON-TOP ELECTRONICS Pb Features G Ultra-Slim 1.5mm Max. Case Height Glass Passivated Die Construction High Reliability Low Forward Voltage Drop High Surge Current Capability
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TB10S
MIL-STD-202,
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TB10S
Abstract: TB6S
Text: TB1S-08~TB10S-08 MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 0.8 Ampers TDI MICRO DIP Unit : inch(mm) Recongnized File #E139973 0.028(0.7) 0.023(0.6) FEATURES • Save space on printed circuit boards ~
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PDF
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TB1S-08
TB10S-08
E139973
2002/95/EC
2010-REV
TB10S
TB6S
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Untitled
Abstract: No abstract text available
Text: TB1S~TB10S MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 1.0 Ampers Recongnized File #E139973 FEATURES 0.028 0.7 0.023(0.6) • Glass passivated chip junciton • Body Thick Very Thin <1.5mm • Low Forward Voltage Drop
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Original
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PDF
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TB10S
E139973
2002/95/EC
MIL-STD-750,
2011-REV
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|
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SMD MARKING CODE A5
Abstract: No abstract text available
Text: C A L IB E R TA1S SMD , TB1S (Thru Hole) Series E14 E L E C T R O N IC S IN C . specifications subject to change * revision 3-2003 SineWave (VC) TCXO Oscillator PART NUMBERING GUIDE TABLE 1 Operating Temperature TB1S 3 20 C V 10.000MHz Package TA1S = SMD
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000MHz
SMD MARKING CODE A5
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TB10S
Abstract: No abstract text available
Text: TB1S~TB10S MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 100~1000 Volts CURRENT 1.0 Amperes Recongnized File #E139973 FEATURES 0.028 0.7 0.023(0.6) • Glass passivated chip junciton • Body Thick Very Thin <1.5mm • Low Forward Voltage Drop
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Original
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PDF
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TB10S
E139973
2002/95/EC
IEC61249
2011-REV
RB500V-40
TB10S
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TMPM374
Abstract: TMPM373 TMPM374FWUG LQFP-64P ADR-301 TMPM372 3shunt TMPM373FWDUG 3 phase sine wave pwm circuit LQFP48-P-0707-0
Text: 32-bit RISC Microcontroller TX03 Series TMPM372FWUG TMPM373FWDUG TMPM374FWUG Semiconductor & Storage Products Company Revision History Rev 1 Date 2011/8/1 Description First Release TMPM372 / 373 / 374 *
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32-bit
TMPM372FWUG
TMPM373FWDUG
TMPM374FWUG
TMPM372
ARM926EJ-S,
TMPM374
TMPM373
TMPM374FWUG
LQFP-64P
ADR-301
3shunt
3 phase sine wave pwm circuit
LQFP48-P-0707-0
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mitsubishi split ac
Abstract: 013A1
Text: t U de nd v e er lo pm en Preliminary Specifications REV.A Mitsubishi microcomputers Specifications in this manual are tentative and subject to change. M16C / 6NT Group SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Description Description The M16C/6NT group of single-chip microcomputers are built using the high-performance silicon gate
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16-BIT
M16C/6NT
M16C/60
100-pin
mitsubishi split ac
013A1
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TFBGA141-P-0909-0
Abstract: E80F PCST40 EJTAG 1.53 204SFC F266 TMP19A23FYXBG
Text: 32-Bit TX System RISC TX19 Family TMP19A23FYXBG/FG Rev1.2 March 10, 2008 TMP19A23 32-bit RISC RISC Microprocessor - TX19 Family TMP19A23FYFG/XBG 1. Overview and Features The TX19 family is a high-performance 32-bit RISC processor series that TOSHIBA originally
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32-Bit
TMP19A23FYXBG/FG
TMP19A23
TMP19A23FYFG/XBG
MIPS16TMASE
TMP19A23
TX19A
TFBGA141-P-0909-0
E80F
PCST40
EJTAG 1.53
204SFC
F266
TMP19A23FYXBG
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D8279
Abstract: M30840MCT M3084
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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M32C/84
M32C/84,
M32C/84T)
16/32-BIT
D8279
M30840MCT
M3084
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TMPM370
Abstract: TMPM370FY emg amp ARM926EJ-S LQFP100-P-1414-0 QFP100-P-1420-0 TMPM370FYFG 08s hall effect sensor TMPM370fyd
Text: 32-bit TX System RISC TX03 Series TMPM370FYDFG TMPM370FYFG Tentative Semiconductor Company Revision History Date 2009/8/4 2009/10/5 Revision Tentative 1 Tentative 2 First Release Contents Revised Under Development TMPM370 *
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32-bit
TMPM370FYDFG
TMPM370FYFG
TMPM370
ARM926EJ-S,
TMPM370
TMPM370FY
emg amp
ARM926EJ-S
LQFP100-P-1414-0
QFP100-P-1420-0
TMPM370FYFG
08s hall effect sensor
TMPM370fyd
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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16-BIT
M16C/29
REJ09B0101-0112
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M3062
Abstract: TA2140 csc 2313 m3062lfgpgp u3
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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M16C/62P
M16C/62P,
M16C/62PT)
REJ09B0185-0241
M3062
TA2140
csc 2313
m3062lfgpgp u3
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0262F8
Abstract: marking TA1S INV04 p67 marking to-252
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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16-BIT
M16C/26
M16C/20
REU09B0001-0090Z
0262F8
marking TA1S
INV04
p67 marking to-252
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