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    TBA 8010 Search Results

    TBA 8010 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XAL8080-102MEB Coilcraft Inc General Purpose Inductor, 1uH, 20%, 3432, Visit Coilcraft Inc
    XAL8080-103 Coilcraft Inc Power inductor, shielded, 20% tol, SMT, RoHS, halogen-free Visit Coilcraft Inc
    XAL8080-103ME Coilcraft Inc Power inductor, shielded, 20% tol, SMT, RoHS, halogen-free Visit Coilcraft Inc
    XAL1580-102MEB Coilcraft Inc General Purpose Inductor, 1uH, 20%, 1 Element, Composite-Core, SMD, 6359, CHIP, 6359, HALOGEN FREE AND ROHS COMPLIANT Visit Coilcraft Inc
    XAL1580-102MED Coilcraft Inc General Purpose Inductor, 1uH, 20%, 1 Element, Composite-Core, SMD, 6359, CHIP, 6359, HALOGEN FREE AND ROHS COMPLIANT Visit Coilcraft Inc
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    TBA 8010 Price and Stock

    Carling Technologies V4D2GHTB-AAC80-100

    Rocker Switches V4D2GHTB-AAC80-100
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics V4D2GHTB-AAC80-100
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    Glenair Inc 801-007-26MT17-7BA

    Circular MIL Spec Connector CIRC MGHTY MSE (80/60) - CIRCULAR MIGHTY MOUSE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 801-007-26MT17-7BA
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    • 10 $543.68
    • 100 $543.68
    • 1000 $543.68
    • 10000 $543.68
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    Glenair Inc 801-007-16MT17-7BA

    Circular MIL Spec Connector CIRC MGHTY MSE (80/60) - CIRCULAR MIGHTY MOUSE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 801-007-16MT17-7BA
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    • 10 $577.12
    • 100 $577.12
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    TBA 8010 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cd photo diode

    Abstract: class H epoxy resin gold detector IC material composition of chip capacitors ic 555 use with metal detector epoxy resin lead frame resin compound copper bond wire CNY64
    Text: Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their future


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    CCD42-40

    Abstract: e2v ccd42-40 e2v ccd Scientific Imaging Technologies ccd sensor back illuminated
    Text: CCD42-40 Ceramic AIMO Back Illuminated Compact Package High Performance CCD Sensor FEATURES * 2048 by 2048 pixel format * 13.5 mm square pixels * Image area 27.6 x 27.6 mm * Back Illuminated format for high quantum efficiency * Full-frame operation * Symmetrical anti-static gate protection


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    PDF CCD42-40 CCD42 ful53 e2v ccd42-40 e2v ccd Scientific Imaging Technologies ccd sensor back illuminated

    ZF15

    Abstract: KM616FS1000 44-TSOP2
    Text: K6F1016V3M, K6F1016S3M, K6F1016R3M Family CMOS SRAM Document Title 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft March 15, 1996 Advance 0.1 Revise - Erase 100ns part from KM616FS1000 Family


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    PDF K6F1016V3M, K6F1016S3M, K6F1016R3M 100ns KM616FS1000 150ns 32-sTSOP1 25/Typ. 42/Typ. ZF15 44-TSOP2

    K6F2016V3M

    Abstract: o12e KM616FV2000 K6F2016S3M KM616FS1000 K6F2016V3M-TC70
    Text: K6F2016V3M, K6F2016S3M, K6F2016R3M Family CMOS SRAM ocument Title 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Design target October 2, 1996 Advance 0.1 Initial draft - Add KM616FV2000 Family


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    PDF K6F2016V3M, K6F2016S3M, K6F2016R3M KM616FV2000 KM616FU1000 KM616FS1000 25/Typ. 42/Typ. 32/Typ. 55/Typ. K6F2016V3M o12e K6F2016S3M K6F2016V3M-TC70

    capacitive proximity sensor

    Abstract: EC3025TBAPL tripleshield tm glass break sensor diagram bk 154 EC3016TBAPL liquid level sensor capacitive saw dust scr v bk bn 500E
    Text: Proximity Sensors Capacitive LD E I H Thermoplastic Polyester Housing LES P I TR Type EC, M 30, AC • Featuring TRIPLESHIELD™ Sensor Protection • Adjustable sensing distance 2-16 mm or 4-25 mm • Rated operational voltage: 20-265 VAC • Output: SCR


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    Untitled

    Abstract: No abstract text available
    Text: MTC Series Longform Datasheets Pages MTC05 . . . . . . . . . . . . . . . . . . . . . . .2-10 MTC15 . . . . . . . . . . . . . . . . . . . . . . .11-19 MTC30 . . . . . . . . . . . . . . . . . . . . .20-29 xppower.com MTC05 • COTS Component for Defense & Avionics Applications


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    PDF MTC05 MTC15 MTC30 MTC05

    nortel accelar 8010

    Abstract: NORTEL accelar 8000 38438 ACCELAR 8010 100BASE-FX CFR47 ICES-003 TBA 8010 ACCELAR "Spanning Tree"
    Text: Enterprise Switches Accelar 8000 Family Data Sheet High Availability Operational Simplicity Low Cost of Ownership The Accelar* 8000 enterprise switch is a new platform providing high availability and multi-service integration for LAN and MAN/WAN applications. It leverages


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    PDF seamless66 nortel accelar 8010 NORTEL accelar 8000 38438 ACCELAR 8010 100BASE-FX CFR47 ICES-003 TBA 8010 ACCELAR "Spanning Tree"

    power BJT anti saturation diode

    Abstract: STV0657 STV0672 STV0680B-001 VV6500 48LCC STV0657 STV0672 STV0680B-001 TBA audio power amplifiers 12 pin vga cmos camera pinout sensor 13 L
    Text: VV5500 & VV6500 Mono and Colour Digital Video CMOS Image Sensors PRELIMINARY RELEASE Key Features • 3.3V operation • Multiple video formats available VV5500 monochrome and VV6500 (colourised) produce digital video output. The video streams from both devices


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    PDF VV5500 VV6500 VV5500/VV6500 cd5500-6500f-2-2 power BJT anti saturation diode STV0657 STV0672 STV0680B-001 VV6500 48LCC STV0657 STV0672 STV0680B-001 TBA audio power amplifiers 12 pin vga cmos camera pinout sensor 13 L

    F222

    Abstract: No abstract text available
    Text: Preliminary OneNAND128 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND128 Part No. VCC core & IO Temperature PKG KFG2816Q1M-DEB 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG2816D1M-DEB 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG2816U1M-DIB 3.3V(2.7V~3.6V)


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    PDF OneNAND128 KFG2816Q1M-DEB OneNAND128 KFG2816D1M-DEB KFG2816U1M-DIB 67FBGA /48TSOP1 F222

    SLC NAND endurance 100k years

    Abstract: 802AH
    Text: Preliminary OneNAND128 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND128 Part No. VCC core & IO Temperature PKG KFG2816Q1M-DEB 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG2816D1M-DEB 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG2816U1M-DIB 3.3V(2.7V~3.6V)


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    PDF OneNAND128 KFG2816Q1M-DEB OneNAND128 KFG2816D1M-DEB KFG2816U1M-DIB 67FBGA /48TSOP1 SLC NAND endurance 100k years 802AH

    012F

    Abstract: reset nand flash 804aH
    Text: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.0 Date: August 4th, 2004 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY Document Title MuxOneNAND


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    PDF MuxOneNAND512 KFM1216Q2M) KFM1216Q2M 48FBGA 512Mb 012F reset nand flash 804aH

    PD36 SMD transistor

    Abstract: 857BH MAXQ2000 MAXQ610 PO46
    Text: Rev 2; 7/10 MAXQ610 USER’S GUIDE MAXQ610 REGULATOR VOLTAGE MONITOR GPIO 16-BIT TIMER 16-BIT MAXQ RISC CPU 4KB ROM SECURE MMU CLOCK 64KB FLASH WATCHDOG 2KB SRAM 16-BIT TIMER 8kHz NANO RING IR DRIVER IR TIMER SPI USART0 USART1 Maxim Integrated Products i


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    PDF MAXQ610 MAXQ610 16-BIT PD36 SMD transistor 857BH MAXQ2000 PO46

    63FBGA

    Abstract: No abstract text available
    Text: MuxOneNAND1G KFM1G16Q2A-DEBx MuxOneNAND2G(KFN2G16Q2A-DEBx) FLASH MEMORY KFXXX16Q2A 1Gb MuxOneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF KFM1G16Q2A-DEBx) KFN2G16Q2A-DEBx) KFXXX16Q2A 80x11 KFG1G16Q2A) KFN2G16Q2A) 63FBGA

    KFM1G16Q2C

    Abstract: 8023-h b*137 63FBGA
    Text: MuxOneNAND1Gb KFM1G16Q2C-xEBx FLASH MEMORY KFM1G16Q2C 1Gb MuxOneNAND C-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF KFM1G16Q2C-xEBx) KFM1G16Q2C 80x11 KFM1G16Q2C) KFM1G16Q2C 8023-h b*137 63FBGA

    TCA 785 application note

    Abstract: KFM1G16Q2A TCA 700 v tca 785 128Mb DDR SDRAM samsung version 0.3 Samsung 2Gb 3V MLC Nand flash Samsung MLC Samsung oneNand Mux 63FBGA 1004C
    Text: MuxOneNAND1G KFM1G16Q2A-DEBx MuxOneNAND2G(KFN2G16Q2A-DEBx) Preliminary FLASH MEMORY MuxOneNANDTM Preliminary Information Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFM1G16Q2A-DEBx 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2A-DEBx


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    PDF KFM1G16Q2A-DEBx) KFN2G16Q2A-DEBx) KFM1G16Q2A-DEBx 63FBGA KFN2G16Q2A-DEBx 80x11 KFG1G16Q2A) TCA 785 application note KFM1G16Q2A TCA 700 v tca 785 128Mb DDR SDRAM samsung version 0.3 Samsung 2Gb 3V MLC Nand flash Samsung MLC Samsung oneNand Mux 1004C

    samsung nor flash 2gb

    Abstract: 63FBGA KFM1G16Q2A 00A2H
    Text: MuxOneNAND1G KFM1G16Q2A-DEBx MuxOneNAND2G(KFN2G16Q2A-DEBx) FLASH MEMORY KFM1G16Q2A KFN2G16Q2A 1Gb MuxOneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF KFM1G16Q2A-DEBx) KFN2G16Q2A-DEBx) KFM1G16Q2A KFN2G16Q2A 80x11 KFG1G16Q2A) KFN2G16Q2A) samsung nor flash 2gb 63FBGA KFM1G16Q2A 00A2H

    NAND Flash controller ecc

    Abstract: KFM1G16Q2C NANDFlashcontrollerecc Samsung oneNand Mux mas 1024b spare parts for mobile 63FBGA
    Text: MuxOneNAND1Gb KFM1G16Q2C-xEBx FLASH MEMORY KFM1G16Q2C 1Gb MuxOneNAND C-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF KFM1G16Q2C-xEBx) KFM1G16Q2C 80x11 KFM1G16Q2C) NAND Flash controller ecc KFM1G16Q2C NANDFlashcontrollerecc Samsung oneNand Mux mas 1024b spare parts for mobile 63FBGA

    512MB NOR FLASH

    Abstract: "bad block" smartmedia ecc oneNand samsung 2GB Nand flash Samsung Electronics. NAND flash memory code lock circuit flow chart KFG1216 mlc nand flash lsb msb NAND flash memory SAMSUNG NAND FLASH
    Text: OneNAND512 KFG1216x2A-xxB5 FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. VCC(core & IO) Temperature PKG KFG1216Q2A-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216Q2A-FEB5 1.8V(1.7V~1.95V) Extended 63FBGA KFG1216U2A-DIB5 3.3V(2.7V~3.6V) Industrial


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    PDF OneNAND512 KFG1216x2A-xxB5) KFG1216Q2A-DEB5 512Mb 63FBGA KFG1216Q2A-FEB5 63FBGA KFG1216U2A-DIB5 KFG1216U2A-FIB5 512MB NOR FLASH "bad block" smartmedia ecc oneNand samsung 2GB Nand flash Samsung Electronics. NAND flash memory code lock circuit flow chart KFG1216 mlc nand flash lsb msb NAND flash memory SAMSUNG NAND FLASH

    8044H

    Abstract: No abstract text available
    Text: OneNAND512/OneNAND1GDDP FLASH MEMORY OneNAND SPECIFICATION Density Part No. VCC core & IO Temperature PKG 512Mb KFG1216Q2M-DEB 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216D2M-DEB 2.65V(2.4V~2.9V) Extended 63FBGA(LF) 1Gb KFG1216U2M-DIB 3.3V(2.7V~3.6V) Industrial


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    PDF OneNAND512/OneNAND1GDDP 512Mb KFG1216Q2M-DEB KFG1216D2M-DEB KFG1216U2M-DIB KFH1G16Q2M-DEB KFH1G16D2M-DEB KFH1G16U2M-DIB 63FBGA 8044H

    KFG1216x2A-xxB5

    Abstract: 512MB NOR FLASH mlc nand flash lsb msb OneNand DRAM SAMSUNG 256Mb NAND Flash Qualification Report 63FBGA KFG1216D2A KFG1216Q2A KFG1216U2A
    Text: OneNAND512 KFG1216x2A-xxB5 FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature 512Mb KFG1216Q2A 1.8V(1.7V~1.95V) Extended 63FBGA(LF)/63FBGA KFG1216D2A 2.65V(2.4V~2.9V) Extended 63FBGA(LF)/63FBGA KFG1216U2A 3.3V(2.7V~3.6V) Industrial


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    PDF OneNAND512 KFG1216x2A-xxB5) 512Mb KFG1216Q2A 63FBGA /63FBGA KFG1216D2A KFG1216U2A KFG1216x2A-xxB5 512MB NOR FLASH mlc nand flash lsb msb OneNand DRAM SAMSUNG 256Mb NAND Flash Qualification Report KFG1216D2A KFG1216Q2A KFG1216U2A

    Untitled

    Abstract: No abstract text available
    Text: OneNAND512 KFG1216x2A-xxB6 FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) 512Mb KFG1216Q2A 1.8V(1.7V~1.95V) Extended 63FBGA(LF)/63FBGA KFG1216D2A 2.65V(2.4V~2.9V) Extended 63FBGA(LF)/63FBGA KFG1216U2A 3.3V(2.7V~3.6V) Industrial 63FBGA(LF)/63FBGA


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    PDF OneNAND512 KFG1216x2A-xxB6) 512Mb KFG1216Q2A KFG1216D2A KFG1216U2A 63FBGA /63FBGA

    KFG1216U2A-DIB6

    Abstract: mlc nand flash lsb msb samsung KFG1216U2A-DIB6 oneNand 63FBGA KFG1216Q2A-DEB6 KFG1216Q2A-FEB6 KFG1216U2A-FIB6
    Text: OneNAND512 KFG1216x2A-xxB6 FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. VCC(core & IO) Temperature PKG KFG1216Q2A-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216Q2A-FEB6 1.8V(1.7V~1.95V) Extended 63FBGA KFG1216U2A-DIB6 3.3V(2.7V~3.6V) Industrial


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    PDF OneNAND512 KFG1216x2A-xxB6) KFG1216Q2A-DEB6 512Mb 63FBGA KFG1216Q2A-FEB6 63FBGA KFG1216U2A-DIB6 KFG1216U2A-FIB6 KFG1216U2A-DIB6 mlc nand flash lsb msb samsung KFG1216U2A-DIB6 oneNand KFG1216Q2A-DEB6 KFG1216Q2A-FEB6 KFG1216U2A-FIB6

    MH1SS1

    Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
    Text: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik


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    TFK 680 CNY 70

    Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
    Text: NAUKOWO-PRODUKCYJNE CENTRUM PÒLPRZEWODNIKÓW CEMI ELEMENTY PÓtPRZEWODNIKOWE I UKtADY SCALONE USTA PREFERENCYJNA 1982/84 Warszawa 1982 WPROWADZENIE LISTA PREFEREMCYJNA zawiera wykaz podzespolów kowanych aktualnle, przewldzianych do produkcji w w ramach urnów specjallzacyjnych 1 kooperacyjnych.


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