tc 122 25 5
Abstract: tc122 25 9
Text: Fast Recovery Diodes Part Number VRRM V TO-262 TSF05A20-11A TSF05A40-11A TSF05A60-11A IFAV (A) Condition IFSM (A) VFM(V) IRM（mA) Tjmax 25°C (°C) 25°C trr (ns) Case Outline 5 5 5 Tc=122℃ Tc=118℃ Tc=107℃ 80 80 80 0.98 1.25 1.7 0.03 0.03 0.03 150
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Original
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O-262
TSF05A20-11A
TSF05A40-11A
TSF05A60-11A
O-263AB
TSF05A20
TSF05A40
TSF05A60
TSU05A60
TSU05B60
tc 122 25 5
tc122 25 9
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PDF
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equivalent of TIP122
Abstract: TIP122
Text: TIP120/121/122 TIP120/121/122 Medium Power Linear Switching Applications • Complementary to TIP125/126/127 1 TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter
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Original
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TIP120/121/122
TIP125/126/127
O-220
TIP120
TIP121
TIP122
equivalent of TIP122
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PDF
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SKKT106B18E
Abstract: 106B1
Text: SKKT 106B18 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 122 A Tc = 100 °C 93 A Tj = 25 °C 2250 A Tj = 130 °C 1900 A Tj = 25 °C 25313 A2s Tj = 130 °C 18050 A2s VRSM 1900 V VRRM 1800 V Chip IT AV ITSM i2t SEMIPACK 1 Thyristor Modules
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Original
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106B18
E63532
SKKT106B18E
106B1
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PDF
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tip125
Abstract: No abstract text available
Text: TIP125/126/127 TIP125/126/127 Medium Power Linear Switching Applications • Complementary to TIP120/121/122 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter
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Original
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TIP125/126/127
TIP120/121/122
O-220
TIP125
TIP126
TIP127
tip125
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PDF
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tc122 20 5 3
Abstract: tc 122 25 5 tc122 25 TC-138 tc122 tc122 25 4
Text: Schottky Diodes Part Number VRRM V IFAV (A) Condition IFSM (A) VFM(V) 25°C IRM（mA) 25°C Tjmax (°C) Case Outline TO-251 EA20QS04 EA20QS06 EA20QS09 EA20QS10 40 60 90 100 1.7 1.7 1.7 1.7 Tc=138℃ Tc=135℃ Tc=139℃ Tc=138℃ 40 40 40 40 0.55 0.58 0.85
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Original
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O-251
EA20QS04
EA20QS06
EA20QS09
EA20QS10
ESL03B03
EA30QS03L
EA30QS04
EA30QS06
EA30QS09
tc122 20 5 3
tc 122 25 5
tc122 25
TC-138
tc122
tc122 25 4
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PDF
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FRH20A10
Abstract: FCH20A20 FRH20A20 Schottky Diodes 5A TC108 TC116 TC105 FCH10 fcq06a06 FCL30A015 tc122 25
Text: Schottky Diodes Part Number VRRM V IFAV (A) Condition IFSM (A) VFM(V) 25°C IRM（mA) 25°C Tjmax (°C) Case Outline TO-220AB Full Pack FSH04A03LB 30 4 Tc=132℃ 100 0.56 1 150 14B FSH04A04B FSH04A06B FSH04A10B 40 60 100 4 4 4 Tc=131℃ Tc=129℃ Tc=126℃
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Original
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O-220AB
FSH04A03LB
FSH04A04B
FSH04A06B
FSH04A10B
FSQ05A03LB
FSQ05A04B
FSH05A04B
FSQ05A06B
FSH05A06B
FRH20A10
FCH20A20 FRH20A20
Schottky Diodes 5A
TC108
TC116
TC105
FCH10
fcq06a06
FCL30A015
tc122 25
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Untitled
Abstract: No abstract text available
Text: CXD8237Q 1/3 IL08 * C-MOS TC(TIME CODE) READER V DD (+5V) GND GND V DD (+5V) GND GND VDD (+5V) VDD (+5V) 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
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CXD8237Q
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PDF
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Untitled
Abstract: No abstract text available
Text: E L E C T R O N I C SB10200FC Power Schottky Rectifier - 10Amp 200Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity
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Original
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SB10200FC
10Amp
200Volt
-65NS
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PDF
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TIP120
Abstract: TIP120 equivalent transistor tip120 Tip122 121 TIP122 TRANSISTOR tip122 TIP121 equivalent transistor tip122
Text: TIP120/121/122 TIP120/121/122 ◎ SEMIHOW REV.A0,Oct 2007 TIP120/121/122 TIP120/121/122 Monolithic Construction With Built In Base-Emitter Shunt Resistors PNP Epitaxial Silicon Darlington Transistor - High DC Current Gain : hFE=1000 @ VCE= 4V, IC= 3A Min.
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Original
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TIP120/121/122
TIP125/126/127
TIP120
TIP121
TIP122
TIP120
TIP120 equivalent
transistor tip120
Tip122 121
TIP122
TRANSISTOR tip122
TIP121
equivalent transistor tip122
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PDF
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Untitled
Abstract: No abstract text available
Text: E L E C T R O N I C SB1040FC Power Schottky Rectifier - 10Amp 40Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity
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Original
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SB1040FC
10Amp
40Volt
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PDF
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STM32L051K8
Abstract: No abstract text available
Text: STM32L051x6 STM32L051x8 Access line ultra-low-power 32-bit MCU ARM -based Cortex®M0+, up to 64 KB Flash, 8 KB SRAM, 2 KB EEPROM, ADC Datasheet - production data Features • • • • Ultra-low-power platform – 1.65 V to 3.6 V power supply – -40 to 105/125 °C temperature range
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Original
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STM32L051x6
STM32L051x8
32-bit
32-bit
DocID025938
STM32L051K8
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PDF
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tc122 20 5 3
Abstract: tc122 25 8 tc122 25 6 2 TC122 25 8 2 tc122 25 6 TC122 tc122 25 3-phase diode rectification tc122 20 - 5
Text: DIODE MODULE DWF R 100A30/40 DWF （R） 100A is a non-isolated diode module designed for 3 phase rectification. ● IF （AV） ＝100A, VRRM＝400V Construction with Joint-Cathode（F） Type and Joint-Anode （R） type. ● Non-isolated.（Mounting Base as terminals.）
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Original
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100A30/40
VRRM400V
31max
M5X10
100A30
100A40
50ms20sec
5ms200sec
tc122 20 5 3
tc122 25 8
tc122 25 6 2
TC122 25 8 2
tc122 25 6
TC122
tc122 25
3-phase diode rectification
tc122 20 - 5
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PDF
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Untitled
Abstract: No abstract text available
Text: KBJ6DH THRU KBJ6MH GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 200 to 1000 Volts Forward Current - 6.0 Amperes KBJ .189 4.80 .173(4.40) .996(25.3) .138(3.50) * Halogen-free type .138 (3.40) .122 (3.10) .579(14.70) .602(15.30) 4.5 Typical .122(3.10)
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Original
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300uS
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PDF
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KBJ6K
Abstract: No abstract text available
Text: KBJ6D THRU KBJ6M GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 200 to 1000 Volts Forward Current - 6.0 Amperes KBJ .189 4.80 .134(3.40) * Lead free product , compliance to RoHs .138 (3.40) .122 (3.10) .579(14.70) .602(15.30) .154(3.90) .161(4.10) .122(3.10)
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Original
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300uS
KBJ6K
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PDF
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|
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AI 303
Abstract: KBJ4J
Text: KBJ4D THRU KBJ4M GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 200 to 1000 Volts Forward Current - 4.0 Amperes KBJ .189 4.80 .134(3.40) * Lead free product , compliance to RoHs .138 (3.40) .122 (3.10) .579(14.70) .602(15.30) .154(3.90) .161(4.10) .122(3.10)
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PDF
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ai 972
Abstract: AI 303
Text: KBJ4DH THRU KBJ4MH GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 200 to 1000 Volts Forward Current - 4.0 Amperes KBJ .189 4.80 .154(3.90) .138(3.50) * Halogen-free type .138 (3.40) .122 (3.10) .579(14.70) .602(15.30) 4.5 Typical .122(3.10) .366(9.30)
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Original
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PDF
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SB1012
Abstract: No abstract text available
Text: E L E C T R O N I C SB10120FC Power Schottky Rectifier - 10Amp 120Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity
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Original
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SB10120FC
10Amp
120Volt
-65NS
SB1012
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PDF
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SB01020
Abstract: B106 SB1040FC
Text: E L E C T R O N I C SB1040FC ~ SB10200FC Power Schottky Rectifier - 10Amp 40~200Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability
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Original
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SB1040FC
SB10200FC
10Amp
200Volt
SB1060FC
SB10100FC
SB10150FC
SB01020
B106
SB1040FC
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PDF
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Untitled
Abstract: No abstract text available
Text: Revised August 2000 100331 Low Power Triple D-Type Flip-Flop General Description Features The 100331 contains three D-type, edge-triggered master/ slave flip-flops with true and complement outputs, a Common Clock CPC , and Master Set (MS) and Master Reset
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PDF
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100331PC
Abstract: 100331QC 100331QI 100331SC M24B MO-047 MS-013 N24E V28A
Text: Revised August 2000 100331 Low Power Triple D-Type Flip-Flop General Description Features The 100331 contains three D-type, edge-triggered master/ slave flip-flops with true and complement outputs, a Common Clock CPC , and Master Set (MS) and Master Reset
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Original
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PDF
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KBJ601
Abstract: KBJ610 KBJ608 GBJ601 GBJ602 GBJ603 KBJ602 KBJ603 KBJ604 KBJ606
Text: SIYU R KBJ601 . KBJ610 塑封硅整流桥堆 Single-phase Silicon Bridge Rectifier 反向电压 50-1000V 正向电流 6.0 A Reverse Voltage 50 to 1000 V Forward Current 6.0 A 特征 Features .157 4.0 + ~ .043(1.1) .035(0.9) •低的反向漏电流 Low reverse leakage
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Original
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KBJ601
KBJ610
0---1000V
KBJ601
KBJ610
KBJ608
GBJ601
GBJ602
GBJ603
KBJ602
KBJ603
KBJ604
KBJ606
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PDF
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tip127 darlington
Abstract: TIP127 TIP122 TIP120 TIP121 TIP125 TIP126 tip122 tip127
Text: SAN YO NPN TIP120 TIP121 TIP122 SEMICONDUCTOR DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS PNP TIP125 TIP126 TIP127 60-80-100 VOLTS, 5 AMPERE HIGH CURRENT GAIN hFE = 2500 typ. @3V, 3A LOW SATURATION VOLTAGE V c e S A T = 1.0V typ. @2.5A MONOLITHIC CONSTRUCTION WITH BUILT-IN
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OCR Scan
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TIP120
TIP125
TIP121
TIP126
TIP122
TIP127
TIP120,
TIP125
TIP121,
TIP126
tip127 darlington
TIP127
tip122 tip127
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PDF
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F15SC6
Abstract: diode code yw SF15SC6
Text: 2/avh+KU7 S W -I* Schottky Barrier Diode y j y a Twin Diode SF15SC6 OUTLINE D IM E N SIO N S 60 V 15A Date code nafe_ $[0181 Type No. M _ • T jl5 0 ° C F15SC6 Polarity ffiiE I7 4.5 ±a 2.7±0- 10±0-2 <¿3.2-01 •P rrsm Unit • mm Package I FTO-220
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OCR Scan
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SF15SC6
FTO-220
F15SC6
J515-5
diode code yw
SF15SC6
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PDF
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X4 DIODE SMD
Abstract: smd diode marking LM smd diode marking B3 smd zm diode
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF20SC4M P y K L l°- ffl 40V m U n it-m m W e ig h t 1.5g (T y p ) 10.2 DA Feature a <SMD • SMD • Tj= 150°C 1Tj=150°C 1 P rrs m Rating 1 High lo Rating -Small-PKG • P rrsm 4.7 Main Use
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OCR Scan
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STO-220
DF20SC4M
X4 DIODE SMD
smd diode marking LM
smd diode marking B3
smd zm diode
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PDF
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