TC-DEL
Abstract: electronic ballast 136 L-103 tridonicatco ELECTRONIC BALLAST SK 0/kaschke 097 665
Text: T5c, TC-F, TC-L, TC-SEL, TC-DEL, TC-TEL Electronic ballasts Compact lamps PC PRO 2/9–42 W 220–240 V 50/60/0 Hz 1,5 sec. • defined lamp warm start in ≤ 1.5 s • constant light output independent of fluctuations in mains voltage • Average service life = 50,000 h
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Abstract: No abstract text available
Text: SEMiX453GD12Vc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 673 A Tc = 80 °C 513 A 450 A ICnom ICRM SEMiX 33c ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 516 A Tc = 80 °C
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SEMiX453GD12Vc
E63532
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Untitled
Abstract: No abstract text available
Text: SEMiX453GB12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 673 A Tc = 80 °C 513 A 450 A ICnom ICRM SEMiX 3s ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 516 A Tc = 80 °C
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SEMiX453GB12Vs
E63532
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Untitled
Abstract: No abstract text available
Text: SEMiX603GB12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 800 A Tc = 80 °C 609 A 600 A ICnom ICRM SEMiX 3s ICRM = 3xICnom 1800 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 516 A Tc = 80 °C
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SEMiX603GB12Vs
E63532
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Untitled
Abstract: No abstract text available
Text: SEMiX453GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
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SEMiX453GAL12E4s
E63532
Ap453GAL12E4s
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SEMIX453GAL12E4S
Abstract: No abstract text available
Text: SEMiX453GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
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SEMiX453GAL12E4s
E63532
SEMIX453GAL12E4S
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SEMiX453GB12E4
Abstract: SEMIX453GB12E4S
Text: SEMiX453GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
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SEMiX453GB12E4s
E63532
SEMiX453GB12E4
SEMIX453GB12E4S
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Untitled
Abstract: No abstract text available
Text: SEMiX453GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
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SEMiX453GAL12E4s
E63532
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Untitled
Abstract: No abstract text available
Text: SEMiX453GD12E4c Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
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SEMiX453GD12E4c
E63532
AppiX453GD12E4c
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Untitled
Abstract: No abstract text available
Text: SEMiX453GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
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SEMiX453GB12E4s
E63532
ApplMiX453GB12E4s
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Untitled
Abstract: No abstract text available
Text: SEMiX453GD12E4c Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
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SEMiX453GD12E4c
E63532
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C526a
Abstract: SEMiX453GAR12E4s Semikron
Text: SEMiX453GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
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SEMiX453GAR12E4s
E63532
C526a
SEMiX453GAR12E4s
Semikron
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SEMIX453GB12E4s
Abstract: No abstract text available
Text: SEMiX453GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
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SEMiX453GB12E4s
E63532
SEMIX453GB12E4s
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Untitled
Abstract: No abstract text available
Text: SEMiX453GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
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SEMiX453GAR12E4s
E63532
Ap453GAR12E4s
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Untitled
Abstract: No abstract text available
Text: SEMiX453GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
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SEMiX453GAR12E4s
E63532
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Untitled
Abstract: No abstract text available
Text: SEMiX453GD12E4c Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
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SEMiX453GD12E4c
E63532
3xI3GD12E4c
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SEMIX453GB12E4s
Abstract: No abstract text available
Text: SEMiX453GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
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SEMiX453GB12E4s
E63532
SEMIX453GB12E4s
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Untitled
Abstract: No abstract text available
Text: Metal Film MELF Resistors NFR Series FEATURES • SURFACE MOUNT IN SIZES 0102 0805 , 0204 (1406), 0207 (2410) AND 0309 (3414) • AVAILABLE IN PRECISION TOLERANCE AND TC (TO ±1% TOL. AND ±25PPM TC) • ALL SIZES ARE AVAILABLE IN TAPE/REEL FOR AUTOMATIC MOUNTING
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25PPM
NFR0102G
NFR0204Q
NFR0207Q
NFR0207H
NFR0207J
NFR0309H
NFR0309J
NFR0309K
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NFR0204ZO
Abstract: No abstract text available
Text: Metal Film MELF Resistors NFR Series FEATURES • SURFACE MOUNT IN SIZES 0102 0805 , 0204 (1406), 0207 (2410) AND 0309 (3414) • AVAILABLE IN PRECISION TOLERANCE AND TC (TO ±1% TOL. AND ±25PPM TC) • ALL SIZES ARE AVAILABLE IN TAPE/REEL FOR AUTOMATIC MOUNTING
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25PPM
NFR0102G
NFR0204Q
NFR0207Q
NFR0207H
NFR0207J
NFR0309H
NFR0309J
NFR0309K
NFR0102ZOTRF
NFR0204ZO
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sd 20n60
Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06
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O-247
PLUS247
ISOPLUS247TM
O-268
O-264
80N06-11
76N07-11
76N07-12
100N10
170N10
sd 20n60
IXFX 44N80
20n80
60n60
9n80
C2625
power mosfet 100n20
IXFH32N50
230N10
8N80
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Abstract: No abstract text available
Text: SEMiX453GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX453GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V
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SEMiX453GB12E4s
E63532
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SEMiX453GAL12E4s
Abstract: No abstract text available
Text: SEMiX453GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX453GAL12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V
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SEMiX453GAL12E4s
SEMiX453GAL12E4s
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Untitled
Abstract: No abstract text available
Text: SEMiX453GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX453GAR12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V
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SEMiX453GAR12E4s
E63532
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1xys
Abstract: 90a944
Text: Ultra-Low VCE sat IGBT IXGN 60N60 VCES ^C25 VCE(sat) Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 MU 600 V V GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25°C 100 A ^C90 Tc = 90°C 60 A •cm Tc 200
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OCR Scan
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60N60
OT-227
1xys
90a944
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