MS3416L464S-07
Abstract: 32MB sdram
Text: MACROTRON MS3416L464S-07 4Mb x 64, 168-Pin DIMM 3.3V Synchronous DRAMs with SPD 32MB SDRAM DIMM FRONT VIEW BACK VIEW GENERAL DESCRIPTION FEATURES The Macrotron MS3416L464S-07 is a PC133 Compliant 4M bit x 64 bit Synchronous Dynamic RAM high density memory module. It consists of four CMOS 4M x 16 bit
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MS3416L464S-07
168-Pin
MS3416L464S-07
PC133
possiDQ13
A0-A11:
A0-A11
Hz/133
32MB sdram
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MS3416L464S-08
Abstract: No abstract text available
Text: MACROTRON MS3416L464S-08 4Mb x 64, 168-Pin DIMM 3.3V Synchronous DRAMs with SPD 32MB SDRAM DIMM FRONT VIEW BACK VIEW GENERAL DESCRIPTION FEATURES The Macrotron MS3416L464S-08 is a PC100 Compliant 4M bit x 64 bit Synchronous Dynamic RAM high density memory module. It consists of four CMOS 4M x 16 bit
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MS3416L464S-08
168-Pin
MS3416L464S-08
PC100
possi12
A0-A11:
A0-A11
Hz/133
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ic 006
Abstract: SD8250 F B J22
Text: SD8250 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: L J N B E C G F I Q M A XIM U M M IN IM U M D IM in ch e s / m m in ch e s / m m .140 / 3.56 A .110 / 2.80 B .110 / 2.80 .395 / 10.03 .407 / 10.34 .193 / 4.90 E MAXIMUM RATINGS .230 / 5.84
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SD8250
SD8250
ic 006
F B J22
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO: VL43B2863A-H0S-G9S-K9S REV: 1.0 General Information 1GB 128MX72 DDR3 SDRAM ECC 204 PIN SO-RDIMM Description: The VL43B2863A is a 128M X 72 DDR3 SDRAM high density SO-RDIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/
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VL43B2863A-H0S-G9S-K9S
128MX72
VL43B2863A
128Mx8
28-bit
204-pin
204-pin,
00TYP
55TYP
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pinout DDR3-1333
Abstract: PC3-10600 PC3-12800 ddr3 1333 VL43B2863A-H0S-G9S-K9S 97A8
Text: Product Specifications PART NO: VL43B2863A-H0S-G9S-K9S REV: 1.0 General Information 1GB 128MX72 DDR3 SDRAM ECC 204 PIN SO-RDIMM Description: The VL43B2863A is a 128M X 72 DDR3 SDRAM high density SO-RDIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/
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VL43B2863A-H0S-G9S-K9S
128MX72
VL43B2863A
128Mx8
28-bit
204-pin
204-pin,
00TYP
55TYP
pinout DDR3-1333
PC3-10600
PC3-12800
ddr3 1333
VL43B2863A-H0S-G9S-K9S
97A8
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PAS 1066
Abstract: PC3-10600 tra 103
Text: Product Specifications PART NO: REV: 1.0 VL41B2863A-K9M-F8M-E7M General Information 1GB 128MX72 DDR3 SDRAM ECC 204 PIN SO-UDIMM Description: The VL41B2863A is a 128Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 204-pin small-outline dual in-line memory module and is intended for
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VL41B2863A-K9M-F8M-E7M
128MX72
VL41B2863A
128Mx8
204-pin
VL41B2863A-K9
A12/BC#
00TYP
PAS 1066
PC3-10600
tra 103
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO: REV: 1.1 VL41B2863A-K9S-F8S-E7S General Information 1GB 128MX72 DDR3 SDRAM ECC UNBUFFERED SO-UDIMM 204-PIN Description: The VL41B2863A is a 128Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM with
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VL41B2863A-K9S-F8S-E7S
128MX72
204-PIN
VL41B2863A
128Mx8
204-pin
204-pin,
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO: REV: 1.0 VL41B2863A-K9M-F8M-E7M General Information 1GB 128MX72 DDR3 SDRAM ECC 204 PIN SO-UDIMM Description: The VL41B2863A is a 128Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8pin MLF package. This module is a 204-pin small-outline dual in-line memory module and is intended for
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VL41B2863A-K9M-F8M-E7M
128MX72
VL41B2863A
128Mx8
204-pin
00TYP
15TYP
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DDR3-1066
Abstract: DDR3-1333 PC3-10600
Text: Product Specifications PART NO: REV: 1.1 VL41B2863A-K9S-F8S-E7S General Information 1GB 128MX72 DDR3 SDRAM ECC UNBUFFERED SO-UDIMM 204-PIN Description: The VL41B2863A is a 128Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM with
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VL41B2863A-K9S-F8S-E7S
128MX72
204-PIN
VL41B2863A
128Mx8
204-pin
A12/BC#
DDR3-1066
DDR3-1333
PC3-10600
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO: REV: 1.0 VL41B2863F-K9S-F8S-E7S General Information 1GB 128MX72 DDR3 SDRAM ULP ECC 204 PIN SO-UDIMM Description: The VL41B2863F is a 128Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8-pin
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VL41B2863F-K9S-F8S-E7S
128MX72
VL41B2863F
128Mx8
204-pin
204-pin,
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DDR3-1066
Abstract: DDR3-1333 PC3-10600 106A2 VL41B2863F-K9S-F8S-E7S
Text: Product Specifications PART NO: VL41B2863F-K9S-F8S-E7S REV: 1.0 General Information 1GB 128MX72 DDR3 SDRAM ULP ECC 204 PIN SO-UDIMM Description: The VL41B2863F is a 128Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8-pin
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VL41B2863F-K9S-F8S-E7S
128MX72
VL41B2863F
128Mx8
204-pin
204-pin,
DDR3-1066
DDR3-1333
PC3-10600
106A2
VL41B2863F-K9S-F8S-E7S
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET D S 0 5 -1 1 1 1 2 -1 E MEMORY NiiiiiiMlllllliiii ËilÈÊËËËÈiËÈËsssi SYNCHRONOU ¡ DYNAMIC RAM DIMM MB8502S072AC-100/-84/-67 200-pin, 1-bank, based on 2 M x 8 BIT SDRAMs with PLL • DESCRIPTION The Fujitsu MB8502S072AC is afully decoded, CMOS Synchronous Dynamic Random Access Memory SDRAM
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MB8502S072AC-100/-84/-67
200-pin,
MB8502S072AC
B81117822A
F9703
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Untitled
Abstract: No abstract text available
Text: MICROSEMI CORP/ lilATERTOUN SDE D RECTIFIER ASSEMBLIES • Dai22bl 2flb ■ U N I T JANTX 483-1 Three Phase Bridges, 25 Amp, M ilitary Approved jantx 483-3 DESCRIPTION This military high-current three phase bridge series is assembled with diodes which have been subjected to TX type
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OCR Scan
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Dai22bl
MIL-S-19500/483
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO: REV: 1.1 VL41B5663A-K9S-F8S-E7S General Information 2GB 256MX72 DDR3 SDRAM ECC UNBUFFERED SO-UDIMM 204-PIN Description: The VL41B5663A is a 256Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of eighteen CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM
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VL41B5663A-K9S-F8S-E7S
256MX72
204-PIN
VL41B5663A
128Mx8
204-pin
A10/AP
A12/BC#
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PC3-10600
Abstract: No abstract text available
Text: Product Specifications PART NO: REV: 1.0 VL43B5663A-K9S/F8S/E7S General Information 2GB 256MX72 DDR3 SDRAM ECC 204 PIN SO-RDIMM Description: The VL43B5663A is a 256Mx72 DDR3 SDRAM high density SO-RDIMM. This memory module consists of eighteen CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered
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VL43B5663A-K9S/F8S/E7S
256MX72
VL43B5663A
128Mx8
28-bit
204-pin
A10/AP
PC3-10600
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vl41B5663
Abstract: 850C PC3-10600 d2ps
Text: Product Specifications PART NO: VL41B5663A-K9S-F8S-E7S-I REV: 1.0 General Information 2GB 256MX72 DDR3 SDRAM ECC 204 PIN SO-UDIMM Description: The VL41B5663A is a 256Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of eighteen CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM
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VL41B5663A-K9S-F8S-E7S-I
256MX72
VL41B5663A
128Mx8
204-pin
204-pin,
vl41B5663
850C
PC3-10600
d2ps
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO: REV: 1.0 VL43B5663A-K9S/F8S/E7S General Information 2GB 256MX72 DDR3 SDRAM ECC 204 PIN SO-RDIMM Description: The VL43B5663A is a 256Mx72 DDR3 SDRAM high density SO-RDIMM. This memory module consists of eighteen CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered
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VL43B5663A-K9S/F8S/E7S
256MX72
VL43B5663A
128Mx8
28-bit
204-pin
204-pin,
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SD1219
Abstract: Transistor sd1219 ASI10733
Text: SD1219 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The SD1219 is Designed for 12.5 V Collector Modulated AM Class C Amplifier Service in the 118 to 136 MHz Avionics Communication Band. PACKAGE STYLE .380" 4L STUD .112x45° A C B FEATURES: E • PG = 8 dB Typical at 60 W/ 175 MHz
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SD1219
SD1219
112x45°
ASI10733
Transistor sd1219
ASI10733
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SD1538-8
Abstract: TACAN
Text: ASI SD1538-8 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE 400 2L FLG A DESCRIPTION: A 4x .062 x 45° The ASI SD1538-8 is a Common Base Device Designed for DME IFF, and TACAN Pulse Applications. 2xB C F E D G FEATURES INCLUDE: 2xR H J K I • Gold Metelization
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SD1538-8
SD1538-8
TACAN
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TA8172AF
Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16
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015Z10
015Z11
015Z12
015Z2
015Z3
TA8172AF
TB 1226 BN
TA8859P
mg75n2ys40
t6961A
TA8242AK
ta8644n
7378P
ta8310
7628P
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Untitled
Abstract: No abstract text available
Text: R32C/118 Group Datasheet Datasheet R32C/118 Group RENESAS MCU 1. REJ03B0255-0110 Rev.1.10 Jun 23, 2010 Overview 1.1 Features The M16C Family offers a robust platform of 32-/16-bit CISC microcomputers MCUs featuring high ROM code efficiency, extensive EMI/EMS noise immunity, ultra-low power consumption, high-speed processing
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R32C/118
REJ03B0255-0110
32-/16-bit
R32C/100
achieve9044
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Untitled
Abstract: No abstract text available
Text: R32C/118 Group Datasheet R32C/118 Group RENESAS MCU 1. REJ03B0255-0100 Rev.1.00 Nov 19, 2009 Overview 1.1 Features The M16C Family offers a robust platform of 32-/16-bit CISC microcomputers MCUs featuring high ROM code efficiency, extensive EMI/EMS noise immunity, ultra-low power consumption, high-speed processing
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R32C/118
REJ03B0255-0100
32-/16-bit
R32C/100
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R5F64186NFB
Abstract: R5F64189 R5F64185 R5F64189HD R5F64189HDFD R5F64186 ISO11898-1 PLQP0100KB-A PLQP0144KA-A R5F64189DFD
Text: R32C/118 Group Datasheet Datasheet R32C/118 Group RENESAS MCU 1. REJ03B0255-0110 Rev.1.10 Jun 23, 2010 Overview 1.1 Features The M16C Family offers a robust platform of 32-/16-bit CISC microcomputers MCUs featuring high ROM code efficiency, extensive EMI/EMS noise immunity, ultra-low power consumption, high-speed processing
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R32C/118
REJ03B0255-0110
32-/16-bit
R32C/100
achieve9044
R5F64186NFB
R5F64189
R5F64185
R5F64189HD
R5F64189HDFD
R5F64186
ISO11898-1
PLQP0100KB-A
PLQP0144KA-A
R5F64189DFD
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J31 transistor
Abstract: f j31
Text: SD1474 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI SD1474 is acommom emitter device, designed for pulsed applications in the 400-500 MHz frequency range. A 4x .062 x 45° 2xB .040 x 45° C F E D G FEATURES: I • Emitter Ballasted
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SD1474
SD1474
J31 transistor
f j31
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