Untitled
Abstract: No abstract text available
Text: SKKT 42, SKKT 42B, SKKH 42 THYRISTOR SEMIPACK 1 Thyristor / Diode Modules NOMP NOOP= NDOP QJOPM R SB I G1&321.1 K&0.% +- 5- '2).-.* -7%(&'2-)H N ZUU VAUU VBUU VSUU N WUU VCUU VTUU V@UU QJIN R TU I G*2)> VWUX J5 R WB YEH M[[J TC¥UW? M[[J TC]UW? M[[$ TC¥UW?
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Untitled
Abstract: No abstract text available
Text: SKKT 72, SKKH 72, SKKT 72B THYRISTOR SEMIPACK 1 Thyristor / Diode Modules SKKT 72 NOMP NOOP= NDOP QJOPM R SCB I G1&321.1 K&0.% +- 5- '2).-.* -7%(&'2-)H N YUU SAUU SBUU STUU SYUU N VUU SCUU S]UU S@UU SVUU QJIN R TU I G*2)> SVUW J5 R VB XEH MZZJ TC[UV? MZZJ TC¥UV?
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300-12io3
Abstract: CS thyristor cs 6 CS 300 cs300 300-16io3
Text: Phase Control Thyristors CS 300 ITRMS = 600 A I TAVM = 380 A VRRM = 1200 - 1600 V 2 VRSM VRRM VDSM VDRM V V 1300 1700 1200 1600 Type 1 2 3 4 CS 300-12io3 CS 300-16io3 4 3 Symbol Test Conditions ITRMS ITAVM TVJ = TVJM TC = 85°C; 180° sine TC = 75°C; 180° sine
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300-12io3
300-16io3
300-12io3
CS thyristor cs 6
CS 300
cs300
300-16io3
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STT800
Abstract: No abstract text available
Text: STT800GKXXPT Thyristor-Thyristor Modules Type Symbol ITAV ITRMS ITSM 2 I t VDRM, VRRM VDSM, VRSM Test Conditions Maximum Ratings Unit TC=85oC; 180o half sine wave,50HZ TC=85oC; 180 o Full cycle sine wave,50HZ TVJ=TVJM 180o half sine wave,50HZ single pulse;
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STT800GKXXPT
500us
50/60Hz,
STT800
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rct Thyristor
Abstract: No abstract text available
Text: SKKT 132, SKKH 132 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 2 Thyristor / Diode Modules MNLO MNNO= MDNO M YRR TARR TBRR TWRR M URR TCRR T¥RR T@RR PISM Q TAR S G*2 > TURV I5 Q UW XEH LZZI TAC[RU? LZZ$ TAC[RU? LZZI TAC[TC? LZZ$ TAC[TC? LZZI TAC[T¥? LZZ$ TAC[T¥?
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CLA50E1200HB
Abstract: CLA50E1200 low voltage scr ixys scr CLA50E1200TC CLA50E CLA 80 E 1200 THYRISTOR 1200 C 106 F scr
Text: CLA 50 E 1200 TC advanced V RRM = I T RMS = I T(AV)M = Low Voltage SCR Single Thyristor 1200 V 79 A 50 A Part number 2 CLA 50 E 1200 TC 1 3 Backside: anode Features / Advantages: Applications: Package: ● Thyristor for line frequency ● Planar passivated chip
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O-268AA
60747and
20090708b
CLA50E1200HB
CLA50E1200
low voltage scr
ixys scr
CLA50E1200TC
CLA50E
CLA 80 E 1200
THYRISTOR 1200
C 106 F scr
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THYRISTOR 1200
Abstract: CLA50E1200HB 132 gd 120 CLA50E1200 CLA50E1200TC a dsm gate no cla50e
Text: CLA 50 E 1200 TC V RRM = I T AV M = I T(RMS) = High Efficiency Thyristor Single Thyristor 1200 V 50 A 79 A Part number 2 CLA 50 E 1200 TC 1 3 Backside: anode Features / Advantages: Applications: Package: ● Thyristor for line frequency ● Planar passivated chip
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O-268AA
60747and
20101215a
THYRISTOR 1200
CLA50E1200HB
132 gd 120
CLA50E1200
CLA50E1200TC
a dsm gate no
cla50e
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CLA50E1200
Abstract: CLA50E1200HB CLA50E CLA 80 E 1200 CLA 30 E 1200 cla50
Text: CLA 50 E 1200 TC V RRM = I T AV M = I T(RMS) = High Efficiency Thyristor Single Thyristor 1200 V 50 A 79 A Part number 2 CLA 50 E 1200 TC 1 3 Backside: anode Features / Advantages: Applications: Package: ● Thyristor for line frequency ● Planar passivated chip
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O-268AA
60747and
20101215a
CLA50E1200
CLA50E1200HB
CLA50E
CLA 80 E 1200
CLA 30 E 1200
cla50
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definition RMS forward current
Abstract: CLA50E
Text: CLA 50 E 1200 TC advanced V RRM = 1200 V 80 A I T RMS = I T(AV)M = 50 A Thyristor Part number 2 CLA 50 E 1200 TC 1 3 Backside: anode Features / Advantages: Applications: ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability of blocking currents and voltages
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20080213a
definition RMS forward current
CLA50E
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definition RMS forward current
Abstract: CLA diode
Text: CLA 50 E 1200 TC advanced V RRM = 1200 V 80 A I T RMS = I T(AV)M = 50 A Thyristor Part number 2 CLA 50 E 1200 TC 1 3 Backside: anode Features / Advantages: Applications: ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability of blocking currents and voltages
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O-268
definition RMS forward current
CLA diode
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Untitled
Abstract: No abstract text available
Text: SKKT 106B18 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 107 A Tc = 100 °C 81 A Tj = 25 °C 2250 A Tj = 130 °C 1900 A Tj = 25 °C 25313 A2s Tj = 130 °C 18050 A2s VRSM 1900 V VRRM 1800 V Chip IT AV ITSM i2t 2 SEMIPACK 1 Thyristor Modules
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106B18
E63532
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Untitled
Abstract: No abstract text available
Text: SKKT 27B16 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit A Chip Tc = 85 °C 28 Tc = 100 °C 21 A Tj = 25 °C 550 A Tj = 130 °C 480 A Tj = 25 °C 1513 A2s Tj = 130 °C 1152 A2s VRSM 1700 V VRRM 1600 V IT AV ITSM i2t 2 SEMIPACK 1 Thyristor Modules
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27B16
E63532
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Untitled
Abstract: No abstract text available
Text: SKKT 27/16 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit A Chip Tc = 85 °C 28 Tc = 100 °C 21 A Tj = 25 °C 550 A Tj = 130 °C 480 A Tj = 25 °C 1513 A2s Tj = 130 °C 1152 A2s VRSM 1700 V VRRM 1600 V IT AV ITSM i2t 2 SEMIPACK 1 Thyristor Modules
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E63532
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Untitled
Abstract: No abstract text available
Text: SKKT 92/12 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 98 A Tc = 100 °C 74 A Tj = 25 °C 2000 A Tj = 130 °C 1750 A Tj = 25 °C 20000 A2s Tj = 130 °C 15313 A2s VRSM 1300 V VRRM 1200 V Chip IT AV ITSM i2t 2 SEMIPACK 1 Thyristor Modules
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SKKT57B16
Abstract: No abstract text available
Text: SKKT 57B16 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 55 A Tc = 100 °C 41 A Tj = 25 °C 1500 A Tj = 130 °C 1200 A Tj = 25 °C 11250 kA2s Tj = 130 °C 7200 kA2s VRSM 1700 V VRRM 1600 V Chip IT AV ITSM i2t 2 SEMIPACK 1 Thyristor Modules
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57B16
E63532
SKKT57B16
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Untitled
Abstract: No abstract text available
Text: SKKT 118/18 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 119 A Tc = 100 °C 91 A Tj = 25 °C 2250 A Tj = 130 °C 1900 A Tj = 25 °C 25313 kA2s Tj = 130 °C 18050 kA2s VRSM 1900 V VRRM 1800 V Chip IT AV ITSM i2t 2 SEMIPACK 1 Thyristor Modules
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Untitled
Abstract: No abstract text available
Text: SKKT 106B12 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 107 A Tc = 100 °C 81 A Tj = 25 °C 2250 A Tj = 130 °C 1900 A Tj = 25 °C 25313 A2s Tj = 130 °C 18050 A2s VRSM 1300 V VRRM 1200 V Chip IT AV ITSM i2t 2 SEMIPACK 1 Thyristor Modules
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106B12
E63532
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semikron skkt 106 16
Abstract: No abstract text available
Text: SKKT 106/16 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 107 A Tc = 100 °C 81 A Tj = 25 °C 2250 A Tj = 130 °C 1900 A Tj = 25 °C 25313 kA2s Tj = 130 °C 18050 kA2s VRSM 1700 V VRRM 1600 V Chip IT AV ITSM i2t 2 SEMIPACK 1 Thyristor Modules
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E63532
semikron skkt 106 16
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Untitled
Abstract: No abstract text available
Text: SKKT 106B18 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 107 A Tc = 100 °C 81 A Tj = 25 °C 2250 A Tj = 130 °C 1900 A Tj = 25 °C 25313 kA2s Tj = 130 °C 18050 kA2s VRSM 1900 V VRRM 1800 V Chip IT AV ITSM i2t 2 SEMIPACK 1 Thyristor Modules
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106B18
E63532
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Untitled
Abstract: No abstract text available
Text: SKKT 57/16 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 55 A Tc = 100 °C 41 A Tj = 25 °C 1500 A Tj = 130 °C 1200 A Tj = 25 °C 11250 kA2s Tj = 130 °C 7200 kA2s VRSM 1700 V VRRM 1600 V Chip IT AV ITSM i2t 2 SEMIPACK 1 Thyristor Modules
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E63532
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Untitled
Abstract: No abstract text available
Text: SKKT 118B16 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 119 A Tc = 100 °C 91 A Tj = 25 °C 2250 A Tj = 130 °C 1900 A Tj = 25 °C 25313 kA2s Tj = 130 °C 18050 kA2s VRSM 1700 V VRRM 1600 V Chip IT AV ITSM i2t 2 SEMIPACK 1 Thyristor Modules
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118B16
E63532
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SKKT 105 / 12 E
Abstract: semipack skkt semikron thyristor skkt 118 DIODE g6 semikron skkt 55 skkt 1000 skkt 40 12 C119A
Text: SKKT 118/12 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 119 A Tc = 100 °C 91 A Tj = 25 °C 2250 A Tj = 130 °C 1900 A Tj = 25 °C 25313 A2s Tj = 130 °C 18050 A2s VRSM 1300 V VRRM 1200 V Chip IT AV ITSM i2t 2 SEMIPACK 1 Thyristor Modules
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E63532
SKKT 105 / 12 E
semipack skkt
semikron thyristor skkt 118
DIODE g6
semikron skkt 55
skkt 1000
skkt 40 12
C119A
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T930S
Abstract: A358S A438S T128F T318F T698F EUPEC tt 104 EUPEC tt 25 N 12 ST178 T510S
Text: S2E J> EUPEC aHGBET? 0G0057Q 45Ô M U P E C A 1250 S ^ 2 * 5 '2 - 1 600 lÿpenreihe/Type range Elektrische Eigenschaften Höchstzulässige Werte 1000 1100 1200 1300* —0* Electrical properties Vrrm tp= 1 «S 'rfTj ’ "/j Itavm tc = 85°C tc = 70°C
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A1250
T-91-20
T930S
A358S
A438S
T128F
T318F
T698F
EUPEC tt 104
EUPEC tt 25 N 12
ST178
T510S
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thyristor scr oscillator circuit
Abstract: 110v thyristor scr 501B 8 P TCM1539 TCM1501A TCM1501B TCM1506B TCM1512B TCM1531 TCM1532
Text: TC M 15 01B , TCM1506B, TC M 15 12B TC M 15 3 1, TCM1532, TCM1536, TCM1539 TELEP H O N E TON E RINGER DRIVERS D 2 9 4 0 M A R C H 1 9 8 6 - R E V I S E D A P R IL 1 9 8 7 • Electronic Replacement for Electromechanical Telephone Bell When Used with Transducer
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TCM1501B,
TCM1506B,
TCM1512B
TCM1531,
TCM1532,
TCM1536,
TCM1539
D2940
1986-REVISED
thyristor scr oscillator circuit
110v thyristor scr
501B 8 P
TCM1501A
TCM1501B
TCM1506B
TCM1531
TCM1532
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