Untitled
Abstract: No abstract text available
Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - TC5316200AP/AF 16M BIT 1M W O R D x 16 B IT / 2 M W ORD x 8 B IT C M O S M A S K RO M DESCRIPTIO N T h e T C 5 3 1 6 2 0 0 A P / A F is a 1 6 ,7 7 7 ,2 1 6 b its r e a d o n ly m e m o ry o rg a n iz e d a s 1 ,0 4 8 ,5 7 6 w o rd s b y 1 6
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TC5316200AP/AF
A0-A19
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Untitled
Abstract: No abstract text available
Text: TOS H IB A LOGIC/MEMORY 42E D • cJDc)75Ma □ Q 2 1 t12b Q ■ T0S2 16M BIT (1M WORD X 16 BIT/2M WORD x 8BIT) CMOS MASK ROM ■ » n » ' 7 ^ - / 3 -J P R E L IM IN A R Y The T C 5316200A P / A F is a 16,777,216 bits read only memory organized as 1,048,576 words by 16
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316200A
600mil
42pin
100/vA(
150ns
TC5316200AP/AF--
IP42--P
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Untitled
Abstract: No abstract text available
Text: 16M BIT 1 M W O R D X 16 B IT /2 M W O R D X 8B IT CMOS MASK RO M PRELIMINARY DESCRIPTION T h e T C 5316200A P / A F is a 16,777,216 b its read only m em ory organized as 1,048,576 w ords by 16 b its w h e n BYTE is logical hig h , an d is organized a s 2,097,152 w ords by 8 b its w hen BYTE is logical
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TC5316200AP
TC5316200AP/
600mil
42pin
150ns
TC5316200AP
D1P42-P-600
D8-D15
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Untitled
Abstract: No abstract text available
Text: 16M BIT 1M W ORD X 16 B IT /2 M WORD X 8BIT CMOS MASK ROM PRELIMINARY DESCRIPTION The TC531G200AF / AF is a 16,777,216 bits read only memory organized as 1,048,576 words by 16 bits w hen BYTE is logical high, and is organized as 2,097,152 words by 8 bits when BYTE is logical
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TC531G200AF
TC5316200AP
600mil
42pin
150ns
TC5316200AP/AFâ
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