Untitled
Abstract: No abstract text available
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 1200 1200 190 / 145 380 / 290 ± 20 800 –40 . + 150 (125) 2 500 RGE = 20 kΩ Tcase = 25/70 °C Tcase = 25/70 °C; tp = 1 ms per IGBT, Tcase = 25 °C
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BLF6G22-180PN
Abstract: No abstract text available
Text: BLF6G22-180PN Power LDMOS transistor Rev. 02 — 23 April 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
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BLF6G22-180PN
BLF6G22-180PN
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mee transient
Abstract: 95-06DA
Text: MEA 95-06 DA MEK 95-06 DA MEE 95-06 DA Fast Recovery Epitaxial Diode FRED Module VRSM VRRM V V 600 600 2 MEA95-06 DA 2 MEK 95-06 DA 3 1 2 Test Conditions IFRMS IFAVÿÿ① IFRM Tcase = 75°C Tcase = 75°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM
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MEA95-06
mee transient
95-06DA
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Untitled
Abstract: No abstract text available
Text: SKM 75 GB 176 DN Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
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BLF6G22-45
Abstract: BLF6G22S-45 ROGERS DUROID
Text: BLF6G22S-45 Power LDMOS transistor Rev. 02 — 17 April 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
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BLF6G22S-45
BLF6G22S-45
BLF6G22-45
ROGERS DUROID
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skna 26
Abstract: SKNA+26/17 skr 26/08
Text: VRSM VRRM Rectifier Diodes IFRMS maximum values for continuous operation 40 A SKN 20 SKNa 20 SKN 26 IFAV (sin. 180; Tcase = 100 °C) 25 A SKR 20 SKR 26 V 200 400 800 1200 1400 1600 SKN 20/02 SKN 20/04 SKN 20/08 SKN 20/12 SKN 20/14 SKN 20/16 SKR 20/02 SKR 20/04
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10voltages
skna 26
SKNA+26/17
skr 26/08
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Untitled
Abstract: No abstract text available
Text: SKM 100 GB 176 DN Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
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Untitled
Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol Values Conditions 1 Units AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 25 / 15 50 / 30 ± 20 145 – 40 . . .+150 125) 2 500 Class F 55/150/56 V V A A V W °C V Inverse Diode Tcase = 25/80 °C IF= – IC IFM= – ICM Tcase = 25/80 °C; tp = 1 ms
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P200PH12
Abstract: P202PH12 P205PH12 P214PH006-08 P215PH06-08 P270PH04 p0273sp12 639X P0306SP06x-08x
Text: Old Part Number PDF Data Sheet Available FAST SWITCHING DEVICE - Fast Turn Off Thyristors - Stud Types VDRM VRRM Range Turn-off Time Tq at 200V/µ µs Note 3 Note 4 V (µ µ s) New Part Number ITAV TCASE IT(RMS) at IT at TCASE TCASE 25oC 85oC 55oC ITMS(1) 10ms VR
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125oC
125oC
180osine
125oC)
101A225
P200PH12
P202PH12
P205PH12
P214PH006-08
P215PH06-08
P270PH04
p0273sp12
639X
P0306SP06x-08x
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L9230
Abstract: L9230-DIE1 SO20 MO-166
Text: L9230 SPI CONTROLLED H-BRIDGE PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ OPERATING SUPPLY VOLTAGE 5V TO 28V TYPICAL RDSon = 150 mΩ FOR EACH OUTPUT TRANSISTOR AT 25°C CONTINOUS DC LOAD CURRENT 5A (Tcase < 100 °C) OUTPUT CURRENT LIMITATION AT TYP. 6A
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L9230
PowerSO20
L9230-DIE1
L9230
L9230-DIE1
SO20
MO-166
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UT-141C-25-TP
Abstract: BLF6G13L-250P 200B 4350B 800B UT-141C-35-TP 250WF
Text: BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor Rev. 2 — 21 March 2011 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit.
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BLF6G13L-250P;
BLF6G13LS-250P
BLF6G13L-250P
6G13LS-250P
UT-141C-25-TP
200B
4350B
800B
UT-141C-35-TP
250WF
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diode SKN
Abstract: SKR 50 Semikron SKR 12 semikron skn 50 Semikron SKR 20 diode skn 17/ 12 Semikron SKR 40 /12 k526 SKR+50/12 3F20
Text: VRSM VRRM Fast Recovery Rectifier Diodes IFRMS maximum values for continuous operation 41 A IFAV (sin. 180; Tcase = 85 °C) 26 A trr = 150 ns SKN 2 F 17 SKN 3 F 20 trr = 250 ns SKR 2 F 17 SKR 3 F 20 V 400 SKN 2F17/04 SKR 2F17/04 SKN 2F17/04UNF SKR 2F17/04UNF
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2F17/04
2F17/04UNF
2F17/04UNF
3F20/08
3F20/08UNF
3F20/10
3F20/10UNF
3F20/12
3F20/12UNF
diode SKN
SKR 50
Semikron SKR 12
semikron skn 50
Semikron SKR 20
diode skn 17/ 12
Semikron SKR 40 /12
k526
SKR+50/12
3F20
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GAL063D
Abstract: NPT-IGBT SKM GAL -700 -4
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 600 600 400 / 300 450 / 450 ± 20 1350 –40 . +150 (125) 2500 Class F 40/125/56 RGE = 20 kΩ Tcase = 25/70 °C Tcase = 25/70 °C; tp = 1 ms
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b93 diode
Abstract: 20F12 600VA skr20f12 20F10 48F12 A48A DIODE B93 ir 20F10 SKR31F
Text: VRSM VRRM IFRMS maximum values for continuous operation 30 A 47 A 72 A IFAV (sin. 180; Tcase = 85 °C; 50 Hz) 20 A 31 A 48 A V 1000 SKR 20F10 SKR 31F10 SKR 48F10 1200 SKR 20F12 SKR 31F12 SKR 48F12 Fast Recovery Rectifier Diodes 1) SKR 20 F SKR 31 F SKR 48 F
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20F10
31F10
48F10
20F12
31F12
48F12
SKR20F
SKR31F
SKR48F
VRR45
b93 diode
20F12
600VA
skr20f12
20F10
48F12
A48A
DIODE B93
ir 20F10
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Untitled
Abstract: No abstract text available
Text: BLP8G20S-80P Power LDMOS transistor Rev. 1 — 30 June 2014 Objective data sheet 1. Product profile 1.1 General description 80 W LDMOS transistor for base station applications at frequencies from 1880 MHz to 1920 MHz. Table 1. Typical performance Typical RF performance per section at Tcase = 25 C in a common Doherty demo board.
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BLP8G20S-80P
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J122 SMD TRANSISTOR
Abstract: BLC6G22L-40BN/2 800B BLF6G22L-40BN
Text: BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
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BLF6G22L-40BN
J122 SMD TRANSISTOR
BLC6G22L-40BN/2
800B
BLF6G22L-40BN
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bi-directional switches IGBT
Abstract: skm 254 f gax-2 semikron case d 56 hardware Semikron SKM SEMIKRON 1200 V 95 A
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 1700 1700 220 / 150 440 / 300 ± 20 1250 –40 . +150 (125) 4000 Class F 40/125/56 RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms
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uc 600
Abstract: diode SKN Semikron SKN 501 /16 skn diodes A2S850 diode skn 40/ 1200 semikron rc semikron skn 50 KN3000
Text: Rectifier Diodes IFAV sin. 180; Tcase = 85 °C VRSM VRRM V 500 A 720 A 1110 A 400 800 1200 1400 1600 1800 2000 2200 2400 – – – – – SKN 450/18 SKN 450/20 SKN 450/22 – SKN 501/04 SKN 501/08 SKN 501/12 SKN 501/14 SKN 501/16 SKN 501/18 – – –
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THYRISTOR SKKT 131/08D
Abstract: semikron skkh 161 semipack skkt 161 semikron skkt 161/12 semikron skkt 131 semikron skkh 131 semikron skkt 161/12E semikron skkh 380 semikron skkt 131/16 THYRISTOR SKKT 131/12E
Text: VRSM VRRM dv/ VDRM dt cr V 900 1300 1300 1500 1700 1900 2100 2300 V V/µs 800 500 1200 500 1200 1000 1400 1000 1600 1000 1800 1000 2000 1000 2200 1000 ITRMS (maximum values for continuous operation) 240 A 270 A 240 A 270 A ITAV (sin. 180; Tcase = . . .) 150 A (85 °C) 172 A (81 °C) 150 A (85 °C) 172 A (81 °C)
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semikron skm 150 gb 123
Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes IF= – IC IFM= – ICM IFSM I2t Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040
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Semikron SKM
Abstract: GAL 200 gb
Text: SKM 145 GB 174 DN . Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1
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3K7/IE32
Semikron SKM
GAL 200 gb
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skm195gal
Abstract: SEMIKRON book
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 1200 1200 290 / 200 580 / 400 ± 20 1250 –40 . +150 (125) 2500 RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C
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SEMiPACK
Abstract: SKKD
Text: VRSM VRRM SEMIPACK 5 Rectifier Diode Modules IFRMS maximum values for continuous operation 1100 A IFAV (sin. 180; Tcase = 100 °C) SKKD 700 V V 700 A 900 1300 1500 1700 1900 2100 2300 800 1200 1400 1600 1800 2000 2200 SKKD 700/08 SKKD 700/12 SKKD 700/14
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E63532
SEMiPACK
SKKD
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skm 152 ga 123
Abstract: semikron skm 152 ga 123 semikron skm 152 ga skm 200 IGBT 600V 200A skm 22 gal 123 SKM 200 GB 102 D SKM 300 CIRCUIT 1502C M200G812 CASED56
Text: s e M IKRO n Absolute Maximum Ratings Symbol VcES VcGR lc ICM Rge = 20 k£2 Tcase = 2 5 /8 0 °C Tcase = 2 5 /8 0 °C; tp = 1 ms per IG BT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 6 8 T.1 Inverse Diode Tcase = 2 5 /8 0 °C If= - lc Tcase = 2 5 /8 0 C . tp = 1 ms
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123D1
skm 152 ga 123
semikron skm 152 ga 123
semikron skm 152 ga
skm 200 IGBT 600V 200A
skm 22 gal 123
SKM 200 GB 102 D
SKM 300 CIRCUIT
1502C
M200G812
CASED56
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