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    TCS M1 Price and Stock

    Kyocera AVX Components TCSM1A226M8R

    S- CASE / 226- CAP CODE / MN02
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    DigiKey TCSM1A226M8R Reel 3,000
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    • 10000 $0.20337
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    TCSM1A226M8R Cut Tape 1
    • 1 $0.78
    • 10 $0.473
    • 100 $0.3133
    • 1000 $0.22848
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    TCSM1A226M8R Digi-Reel 1
    • 1 $0.78
    • 10 $0.473
    • 100 $0.3133
    • 1000 $0.22848
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    Mouser Electronics TCSM1A226M8R
    • 1 $0.78
    • 10 $0.352
    • 100 $0.249
    • 1000 $0.228
    • 10000 $0.172
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    TTI TCSM1A226M8R Reel 9,000 3,000
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    Avnet Asia TCSM1A226M8R 14 Weeks 3,000
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    Kyocera AVX Components TCSM1C106M8R

    CAP TANT 10UF 20% 16V 0603
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    DigiKey TCSM1C106M8R Digi-Reel 1
    • 1 $0.85
    • 10 $0.516
    • 100 $0.3432
    • 1000 $0.25136
    • 10000 $0.25136
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    TCSM1C106M8R Cut Tape 1
    • 1 $0.85
    • 10 $0.516
    • 100 $0.3432
    • 1000 $0.25136
    • 10000 $0.25136
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    TCSM1C106M8R Reel 3,000
    • 1 -
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    • 10000 $0.22373
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    Mouser Electronics TCSM1C106M8R
    • 1 $0.81
    • 10 $0.385
    • 100 $0.344
    • 1000 $0.252
    • 10000 $0.191
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    Kyocera AVX Components TCSM1A226M8R-02

    CAP TANT 22UF 20% 10V 0603
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    DigiKey TCSM1A226M8R-02 Bulk 1
    • 1 $0.56
    • 10 $0.341
    • 100 $0.2247
    • 1000 $0.16301
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    Win Source Electronics TCSM1A226M8R-02 201,100
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    • 1000 $0.2139
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    ams OSRAM Group GT CS8PM1.13-LSLU-26-1

    High Power LEDs - Single Color GT CS8PM1.13
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics GT CS8PM1.13-LSLU-26-1 13,780
    • 1 $1.83
    • 10 $1.16
    • 100 $0.857
    • 1000 $0.787
    • 10000 $0.587
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    ams OSRAM Group GT CS8PM1.13-LQLU-26-1

    High Power LEDs - Single Color GT CS8PM1.13
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    Mouser Electronics GT CS8PM1.13-LQLU-26-1 4,095
    • 1 $1.82
    • 10 $1.15
    • 100 $0.856
    • 1000 $0.786
    • 10000 $0.587
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    Find more TCS M1 price and stock on Findchips.com

    TCS M1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TCSM1C106M8R ROHM Semiconductor Tantalum Capacitor 10UF 20% 16V 0603 Original PDF

    TCS M1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M128E32

    Abstract: 4Mbit eeprom 28 pin 128k eeprom
    Text: M128E32 128K x 32 EEPROM Issue 2.1 December 2007 General Description Features The M128E32 is a high reliability 4Mbit EEPROM with access times of 120, 150 and 200ns. The part is normally organised as 128Kx32bits wide but is user configurable as 256Kx16 or 51Kx8. For surface


    Original     		PDF M128E32 M128E32 200ns. 128Kx32bits 256Kx16 51Kx8. MIL-STD-883 MIL-STD-883 4Mbit eeprom 28 pin 128k eeprom

    IS42S16128

    Abstract: IS42S16128-10T IS42S16128-11T
    Text: ISSI ISSI IS42S16128 IS42S16128 128K Words x 16 Bits x 2 Banks 4-MBIT SYNCHRONOUS DYNAMIC RAM ® ADVANCE INFORMATION DECEMBER 1997 FEATURES DESCRIPTION • Clock frequency: 100 MHz ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance.


    Original     		PDF IS42S16128 IS42S16128 131072-word 16-bit DR005-0B IS42S16128-10T IS42S16128-11T

    IS45S16100E

    Abstract: 45S16100E
    Text: IS45S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11 bank select


    Original     		PDF IS45S16100E IS45S16100E 45S16100E

    IS42S16100E

    Abstract: IS45S16100E
    Text: IS42S16100E IS45S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently


    Original     		PDF IS42S16100E IS45S16100E IS45S16100E-7TLA2 IS45S16100E-7BLA2 400-mil 60-ball IS42S16100E, IS42S16100E IS45S16100E

    Capacitor Bank

    Abstract: IC42S16102 IC42S16102-7T
    Text: IC42S16102 Document Title 512K x 16 Bit x 2 Banks 16-MBIT SDRAM Revision History Revision No History Draft Date 0A 0B Initial Draft This device improves output driving strength August 28,2004 January 18,2005 Remark The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and


    Original     		PDF IC42S16102 16-MBIT) DR042-0A IC42S16102-5TI IC42S16102-5TIG IC42S16102-5BIG IC42S16102-6TI IC42S16102-6TIG Capacitor Bank IC42S16102 IC42S16102-7T

    IS42S16100C1

    Abstract: 42S16100C1 is42s16100c1-6t
    Text: IS42S16100C1 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently


    Original     		PDF IS42S16100C1 16-MBIT) 60-ball 143MHz IS42S16100C1 42S16100C1 is42s16100c1-6t

    IS42R16100E

    Abstract: 42R16100E
    Text: IS42R16100E 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 143, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11


    Original     		PDF IS42R16100E 16-MBIT) IS42R16100E 42R16100E

    IS42S16100A1

    Abstract: IS42S16100A1-7TL
    Text: ISSI IS42S16100A1 April 2003 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 166, 143, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and


    Original     		PDF IS42S16100A1 16-MBIT) 143MHz IS42S16100A1-6T IS42S16100A1-6TL IS42S16100A1-7T IS42S16100A1-7TL IS42S16100A1-10T IS42S16100A1-10TL IS42S16100A1 IS42S16100A1-7TL

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS42VS16100C1 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently


    Original     		PDF IS42VS16100C1 16-MBIT)

    Untitled

    Abstract: No abstract text available
    Text: IC42S16101 Document Title 512K x 16 Bit x 2 Banks 16-MBIT SDRAM Revision History Revision No History Draft Date Remark 0A 0B 0C 0D Initial Draft Change tOH from 2.5 ns to 2.2 ns Add 60 ball(16M SDRAM) VF-BGA package Add Pb-free package August 28,2001 April 15,2002


    Original     		PDF IC42S16101 16-MBIT) DR025-0D IC42S16101-6TI IC42S16101-6TIG IC42S16101-6BIG IC42S16101-7TI IC42S16101-7TIG

    Untitled

    Abstract: No abstract text available
    Text: IS42S16100E 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently


    Original     		PDF IS42S16100E 16-MBIT)

    Untitled

    Abstract: No abstract text available
    Text: IS42S16100A1 IS42S16100A2 ISSI 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM FEBRUARY 2003 FEATURES • Clock frequencies: 100 MHz, 143 MHz, 166 MHz (A1 only) • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and


    Original     		PDF IS42S16100A1 IS42S16100A2 16-MBIT) IS42S16100A1-6T IS42S16100A1-7T IS42S16100A2-7T IS42S16100A1-10T IS42S16100A2-10T

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS42S16100B August 2003 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 166, 143, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and


    Original     		PDF IS42S16100B 16-MBIT) 143MHz IS42S16100B-6T IS42S16100B-6TL IS42S16100B-7T IS42S16100B-7TL IS42S16100B-10T IS42S16100B-10TL

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS42S16100C 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently


    Original     		PDF IS42S16100C 16-MBIT) 143MHz IS42S16100C-5T IS42S16100C-5TL IS42S16100C-6T IS42S16100C-6TL IS42S16100C-7T

    IS42S16100A1

    Abstract: No abstract text available
    Text: ISSI IS42S16100A1 August 2003 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 166, 143, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and


    Original     		PDF IS42S16100A1 16-MBIT) IS42S16100A1

    Untitled

    Abstract: No abstract text available
    Text: IS42S16100C1 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES •฀ Clock฀frequency:฀200,฀166,฀143฀MHz •฀ Fully฀synchronous;฀all฀signals฀referenced฀to฀a฀ positive clock edge •฀ Two฀banks฀can฀be฀operated฀simultaneously฀and฀


    Original     		PDF IS42S16100C1 16-MBIT) 60-ballà 143MHzà

    IS42S16100

    Abstract: Programmable Silicon Solutions
    Text: ISSI IS42S16100 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM NOVEMBER 2001 FEATURES DESCRIPTION • Clock frequency: 166, 143, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously


    Original     		PDF IS42S16100 16-MBIT) 143MHz IS42S16100-6T IS42S16100-7T IS42S16100-10T 400-mil IS42S16100 Programmable Silicon Solutions

    Capacitor Bank

    Abstract: IS42S16100A1
    Text: ISSI IS42S16100A1 August 2003 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 166, 143, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and


    Original     		PDF IS42S16100A1 16-MBIT) 143MHz IS42S16100A1-6T IS42S16100A1-6TL IS42S16100A1-7T IS42S16100A1-7TL IS42S16100A1-10T IS42S16100A1-10TL Capacitor Bank IS42S16100A1

    Untitled

    Abstract: No abstract text available
    Text: IS42VS16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 133, 100, 83 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11


    Original     		PDF IS42VS16100E

    IS42S16128

    Abstract: IS42S16128-10T IS42S16128-8T
    Text: ISSI IS42S16128 128K Words x 16 Bits x 2 Banks 4-MBIT SYNCHRONOUS DYNAMIC RAM FEBRUARY 2000 FEATURES DESCRIPTION • Clock frequency: 125 MHz, 100 MHz, 83 MHz ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance.


    Original     		PDF IS42S16128 IS42S16128 131072-word 16-bit IS42S16128-10T IS42S16128-8T

    TSMC 0.25Um

    Abstract: CL025G M1T2HT25FL64
    Text: High Speed Flow-through 2-Mbit 32Kx64 Standard 1T-SRAM Embedded Memory Macro M1T2HT25FL64 • High Speed 1T-SRAM Standard Macro • 83 MHz operation • 1-Clock cycle time • Flow-through read access timing • Late write mode timing • 64-Bit wide data buses


    Original     		PDF 32Kx64) M1T2HT25FL64 64-Bit CL025G M1T2HT25FL64 TSMC 0.25Um

    M1T1HT25FL64

    Abstract: No abstract text available
    Text: High Speed Flow-through 1-Mbit 16Kx64 Standard 1T-SRAM Embedded Memory Macro M1T1HT25FL64 • High Speed 1T-SRAM Standard Macro • 83 MHz operation • 1-Clock cycle time • Flow-through read access timing • Late write mode timing • 64-Bit wide data buses


    Original     		PDF 16Kx64) M1T1HT25FL64 64-Bit CL025G M1T1HT25FL64

    Capacitor Bank

    Abstract: 54 act 14 bank capacitor IS42S16100 IC42S16101
    Text: IC42S16101 Document Title 512K x 16 Bit x 2 Banks 16-MBIT SDRAM Revision History Revision No History Draft Date 0A 0B Initial Draft Change tOH from 2.5 ns to 2.2 ns August 28,2001 April 15,2002 Remark The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and


    Original     		PDF IC42S16101 16-MBIT) DR025-0B IC42S16101-6T IC42S16101-7T IC42S16101-8T 400mil Capacitor Bank 54 act 14 bank capacitor IS42S16100 IC42S16101

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS42S16100C1 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently


    Original     		PDF IS42S16100C1 16-MBIT) 143MHz IS42S16100C1-5T IS42S16100C1-5TL IS42S16100C1-6T IS42S16100C1-6TL IS42S16100C1-7T