Untitled
Abstract: No abstract text available
Text: VN B14N04/K14N04FM VNP14N04FI/VNV14N04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VN B14N 04 VN K14N 04FM VNP14N 04FI VN V14N 04 Vclamp 42 42 42 42 V V V V R D S o n 0 .0 7 0 .0 7 0 .0 7 0 .0 7 Q. a n Cl 11im 14 14 14 14 A A A A . . . . . .
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OCR Scan
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B14N04/K14N04FM
VNP14N04FI/VNV14N04
VNP14N
O-263
VNB14N04,
VNK14N04FM,
VNP14N04FI
VNV14N04
14N04FI-VNV14N04
PowerSO-10
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AKN62428
Abstract: 048576-WORD
Text: AKN62418 Series AKN62428 Series 524288-Word A KN62418, x 16-Bit/I 048576-Word A K N 62428 Series is x 8-Bit CMOS Mask Programmable ROM mask- PIN CONFIGURATION programmable ROM organized either as 524288-word x 16-Bit or as an 8-Mbit CM O S A K N 62418P, A K N 62428P
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OCR Scan
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AKN62418
AKN62428
524288-Word
KN62418,
16-Bit/I
048576-Word
62418P,
62428P
524288-word
16-Bit
048576-WORD
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Untitled
Abstract: No abstract text available
Text: VNP28N04FI VNB28N04/VNV28N04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R D S o n I lim VNP28N 04FI VN B28N 04 VN V28N 04 42 V 42 V 42 V 0.0 35 Q. 0 .0 3 5 a 0.0 35 n 28 A 28 A 28 A . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN
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OCR Scan
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VNP28N04FI
VNB28N04/VNV28N04
VNP28N
VNP28N04FI,
VNB28N04
VNV28N04
MOSFETSNB28N04-VNV28N04
PowerSO-10
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Untitled
Abstract: No abstract text available
Text: rz J Ä T# S C S -T H O M S O N [M G IM llL iO T » ! V N H 100N 04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TA R G E T D A T A TYPE Vclamp RDS on 1lim VN H 100N04 42 V 0 .0 1 2 Û 100 A . . . . . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN
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OCR Scan
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100N04
O-218
VNH100N04
VNH100N04
7T2T237
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PDF
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SKM224A
Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol VDS VDGR ID IDM VGS PD Tj, Tstg Visol humidity climate Conditions 1 RGS = 20 kΩ Tcase = 25 °C Tcase = 85 °C AC, 1 min DIN 40 040 DIN IEC 68 T.1 Values Units 200 200 120 87 360 ± 20 500 – 55 . . .+150 2 500 Class F 55/150/56
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Untitled
Abstract: No abstract text available
Text: Æ T S G S -1H 0M S 0N D lsi S IIL[lCTIs! iD©S VNW50N04A ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R D S (o n ) I lim VNW 50N 04A 42 V 0.012 Q. 50 A . . . . . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION
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OCR Scan
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VNW50N04A
O-247
VNW50N04A
P025P
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PDF
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Untitled
Abstract: No abstract text available
Text: Æ T S G S - 1 H M S N n lsi S IIL[iCTIsî iD©S V N W 100 N 04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET P R E L IM IN A R Y D A T A TYPE V clamp RDS(on) 11im VNW 100N 04 42 V 0 .012 Q. 1 00 A . . . . . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN
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OCR Scan
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O-247
VNW100N04
P025P
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet PA2690T1R R07DS1000EJ0101 Rev.1.01 Mar 04, 2013 COMPLEMENTARY MOSFET 20V, 4.0A, 42mΩ / –20V, –3.0A, 79mΩ Description The μPA2690T1R is Dual N- and P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications
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PA2690T1R
R07DS1000EJ0101
PA2690T1R
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Untitled
Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol VDS VDGR ID IDM VGS PD Tj, Tstg Visol humidity climate Conditions 1 RGS = 20 kΩ AC, 1 min DIN 40 040 DIN IEC 68 T.1 Values Units 800 800 36 144 ± 20 700 – 55 . . .+150 2 500 Class F 55/150/56 V V A A V W °C V 36 144 A
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P600
Abstract: 15KP 15KP17 15KP18 15KP20 15KP22 15KPJ17 t-d 94v 0
Text: DATA SHEET 15KP SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power P-600 FEATURES .052 1.3 .048 ( 1.2 ) 1.0 ( 25.4 ) MIN. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O
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P-600
P-600
5000W
P600
15KP
15KP17
15KP18
15KP20
15KP22
15KPJ17
t-d 94v 0
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PDF
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GSS4816S
Abstract: GSS6900S
Text: Pb Free Plating Product ISSUED DATE :2006/04/28 REVISED DATE : CH1 BVDSS 30V N-CH RDS ON 30m N-CH ID 5.7A CH2 BVDSS 30V N-CH RDS(ON) 22m N-CH ID 9.8A GSS6900S DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE Description The GSS6900S provide the designer with the best combination of fast switching, ruggedized device design,
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GSS6900S
GSS6900S
GSS4816S
GSS4816S
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GSS4816S
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2006/04/28 REVISED DATE : CH1 BVDSS 30V N-CH RDS ON 22m N-CH ID 6.7A CH2 BVDSS 30V N-CH RDS(ON) 13m N-CH ID 11.5A GSS4816S DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE Description The GSS4816S provide the designer with the best combination of fast switching, ruggedized device design,
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GSS4816S
GSS4816S
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3217b
Abstract: NEC 4216160 4216160 IC-3217B 4218160
Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S16160,4216160,42S18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE D escription The /iPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 words by 16 bits dynamic CMOS RAMs.
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OCR Scan
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uPD42S16160
uPD4216160
uPD42S18160
uPD4218160
16-BIT,
/iPD42S16160,
42S18160,
PD42S16160,
42S18160
50-pin
3217b
NEC 4216160
4216160
IC-3217B
4218160
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RQK0303MGDQA R07DS0306EJ0500 Previous: REJ03G1276-0400 Rev.5.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 42 m typ (VGS = 10 V, ID = 1.8 A) Low drive current High speed switching
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RQK0303MGDQA
R07DS0306EJ0500
REJ03G1276-0400)
PLSP0003ZB-A
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PDF
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Untitled
Abstract: No abstract text available
Text: se MIKRDn Absolute Maximum Ratings V a lu e s Units Symbol C onditions 1 VcES VcGR lc IcM Vges Rge = 20 k ii Tease = 25/80 °C Tease = 25/80 °C¡ tp = 1 ms 1700 1700 7 5 /5 0 144/100 ±20 per IGBT, Tease = 25 °C AC, 1 min. DIN 4 0 040 DIN IEC 68T .1 500
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OCR Scan
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fll3bb71
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PDF
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Untitled
Abstract: No abstract text available
Text: VNP49N04FI VNB49N04 / VNV49N04 “OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V CLAMP R DS ON • l im 42 V 20 m£2 49 A VNP49N 04FI VN B49N 04 VN V49N 04 „ „ „ „ „ „ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP
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OCR Scan
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VNP49N04FI
VNB49N04
VNV49N04
VNP49N
VNP49N04FI,
VNB49N04,
VNV49N04
O-263
PowerSO-10â
VNP49N04FI
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PDF
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2n0404
Abstract: SPB80N04S2-04 SPP80N04S2-04
Text: SPP80N04S2-04 SPB80N04S2-04 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version •=175°C operating temperature ID • Avalanche rated P-TO263-3-2 40 V 3.4 mΩ 80 A P-TO220-3-1
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SPP80N04S2-04
SPB80N04S2-04
P-TO263-3-2
P-TO220-3-1
P-TO220-3-1
Q67040-S4260
P-TO263-3-2
Q67040-S4257
2n0404
SPB80N04S2-04
SPP80N04S2-04
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PDF
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SD 1351
Abstract: No abstract text available
Text: SPICE Device Model SUP/SUB85N03-04P Vishay Siliconix N-Channel 30-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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SUP/SUB85N03-04P
S-60545Rev.
10-Apr-06
SD 1351
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PDF
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Untitled
Abstract: No abstract text available
Text: s e M IKRO n Absolute Maximum Ratings Sym bol V ds V dgr Id Idm V gs Conditions ' Rgs = 20 kQ Visol humidity climate Units 800 V 800 V 36 144 A A ±20 V 700 W - 5 5 . . .+150 °C 2 500 V Pd Tj, Tstg Values A C , 1 min DIN 40 040 DIN IEC 68 T.1 55/150/56 A
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OCR Scan
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fll3bb71
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PDF
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Untitled
Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) Units AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1700 1700 75 / 50 144 / 100 ± 20 500 – 40 . . .+150 (125) 4000 Class F 40/125/56 V V A A V W °C
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Untitled
Abstract: No abstract text available
Text: What H E W L E T T * mLliM PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0400 Features • Cascadable 50 Q. Gain Block • 3 dB Bandwidth: DC to 4.0 GHz • 8.5 dB Typical Gain at 1.0 GHz • 16.0 dBm Typical Px¿a at 1.0 GHz The MSA-series is fabricated using
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OCR Scan
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MSA-0400
MSA-0400
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PDF
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Untitled
Abstract: No abstract text available
Text: T h a i H E W IT T mLfim P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0400 F eatures • Cascadable 50 Q Gain Block • 3 dB Bandwidth: DC to 4.0 GHz • 8.5 dB Typical Gain at 1.0 GHz • 16.0 dBm Typical Pi dB at 1.0 GHz The MSA-series is fabricated using
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OCR Scan
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MSA-0400
utline11
MSA-0400
44475A4
5965-9572E
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PDF
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RJK0328DPB-01
Abstract: No abstract text available
Text: Preliminary Datasheet RJK0328DPB-01 R07DS0264EJ0500 Previous: REJ03G1637-0400 Rev.5.00 Mar 01, 2011 Silicon N Channel Power MOS FET Power Switching Features • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting
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Original
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RJK0328DPB-01
R07DS0264EJ0500
REJ03G1637-0400)
PTZZ0005DA-A
RJK0328DPB-01
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PDF
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TJA1080ATS
Abstract: tja1080 TJA1080 "application note" TJA1080A 5 MM UV TRANSMITTER bge 1,5 data sheet for all smd components AEC-Q100 MO-150 SSOP20
Text: TJA1080ATS/2 FlexRay transceiver Rev. 04 — 19 February 2009 Product data sheet 1. General description The TJA1080ATS/2 is a FlexRay transceiver that is fully compliant with the FlexRay electrical physical layer specification V2.1 Rev. A see Ref. 1 and partly complies with
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Original
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TJA1080ATS/2
TJA1080ATS/2
TJA1080A
TJA1080ATS
tja1080
TJA1080 "application note"
5 MM UV TRANSMITTER
bge 1,5
data sheet for all smd components
AEC-Q100
MO-150
SSOP20
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PDF
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