transistor bf 254
Abstract: bf255 bf254 BF255C transistor BF 255 transistor NPN BF255 transistor marking ra
Text: Ö1C D TELEFUNKEN ELECTRONIC • fl^OOSb 0005163 M T * -J /-* / BF 254 • BF 255 ‘¡TilLilFyMDSliMl electronic Creative Technologies Silicon NPN Epitaxial Planar Transistors Applications: BF 254: General and controlled RF amplifier stages up to 100 MHz
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569-GS
transistor bf 254
bf255
bf254
BF255C
transistor BF 255
transistor NPN BF255
transistor marking ra
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BF184
Abstract: Bf184 transistor transistor bc 7-40 TELEFUNKEN e transistor marking ra BF 145 transistor
Text: filC D TELEFUNKEN E LE CT RONI C TTliUiiFyKlKllNl electronic • ÔTSOGTb OQDSlbô fi 7 = 3 /-/5 - BF184 ' CreativeTechnologies Silicon NPN Epitaxial Planar RF Transistor Applications: General and controlled RF amplifier stages upt to 100 MHz Features: • Noise figure 3.S dB
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BF184
569-GS
BF184
Bf184 transistor
transistor bc 7-40
TELEFUNKEN e
transistor marking ra
BF 145 transistor
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J3005
Abstract: BF311 transistor BF 37 transistor marking ra marking code YA Transistor U16020
Text: ö le D TELEFUNKEN ELECTRONIC • a^soQ^b o o o s m 'W BF 311 TidtifpyKlKilMl electronic T - z t - t f Creative Tech nologïes Silicon NPN Epitaxial Planar RF Transistor I Applications; Video IF amplifier stages configuration, especially in video IF power stages
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569-GS
J3005
BF311
transistor BF 37
transistor marking ra
marking code YA Transistor
U16020
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ec 8020
Abstract: Scans-0017843 telefunken 8020 EC8020
Text: Netzröhre für GW-Heizung indirekt gebeizt Parallelspeisung DC-AC-Heating indirectly heated connected in parallel _ p EC 8 0 2 0 . TELEFUNKEN , . . . L e .s tu n g s tr.o d e P o w e r t r io d e Für VHF- und UHF-Verstärker in Gitterbasisschaltung. For VH F and UHF amplifiers in grid grounded.
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--Z90-Â
ec 8020
Scans-0017843
telefunken 8020
EC8020
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marking 822
Abstract: transistor IC 1557 b Telefunken u 257
Text: Temic S822T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features •
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S822T
08-Apr-97
marking 822
transistor IC 1557 b
Telefunken u 257
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Untitled
Abstract: No abstract text available
Text: BAQ133.BAQ135 Vishay Telefunken Silicon Planar Diodes Features • Very low reverse current Applications Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage
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BAQ133.
BAQ135
BAQ133
BAQ134
50mmx50mmx1
01-Apr-99
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bf185
Abstract: telefunken ra 200 amplifier transistor bc 7-40 transistor bf 185 transistor marking c y
Text: Ö1C D TELEFUNKEN ELECTRONIC TUmiFtUlMKIKl electronic • fi^SOO'ib 0005172 T B F 185 7= 3/-/S— Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: General and RF amplifier stages up to 100 MHz Feature*: • Noise figure 4 dB Dimensions In mm
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569-GS
bf185
telefunken ra 200 amplifier
transistor bc 7-40
transistor bf 185
transistor marking c y
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TRANSISTOR BC 814
Abstract: TRANSISTOR "BC 258" transistor BF 257 ci 4580 MARKING CFK CFk10 BC 251 transistor TRANSISTOR BC 256 Telefunken u 257
Text: . TELEFUNKEN ELECTRONIC file D ^•3 m W I M M electronic Creative Technologies ■ a^BOG^b 00053^2 5 /~ZS~ CFK10 N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration; In wireless telephone, broadcast sets, cabel TV and equipments with
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CFK10
569-GS
TRANSISTOR BC 814
TRANSISTOR "BC 258"
transistor BF 257
ci 4580
MARKING CFK
CFk10
BC 251 transistor
TRANSISTOR BC 256
Telefunken u 257
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telefunken ra 200 amplifier
Abstract: UBA 4001 BI474 EL3010 tube el 36 telefunken ra 100 telefunken ra 200 2X40 Telefunken tubes A-0601
Text: Netzröhre für GW-Heizung S Ä EL 3010 T E L E F UN K E N DC-AC-Heating L e is t u n g s p e n t o d e indirectly heated connected in parallel P o w e r p e n to d e Vorläufige technische Daten • Tentative data Z u v e rlä ssig k e it R e lia b ility
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ECC803S
Abstract: telefunken ra 200 telefunken tubes
Text: Netzröhre für GW-Heizung indirekt geheizt Parallelspeisung DC-AC-Heating indirectly heated connected in parallel ECC803S TELEFUNKEN 6057 N F -D o p p e ltrio d e m it ge tre n n te n K a th o d e n A F-Tw in triod e w ith se p a ra te c a th o d e s Z u v e r lä ss ig k e it
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50/oo
ECC803S
telefunken ra 200
telefunken tubes
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Untitled
Abstract: No abstract text available
Text: Temic BFS17A/BFS17AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications W ide-band, low noise, small signal amplifiers up to UHF frequencies, high speed logic applications and oscillator ap
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BFS17A/BFS17AR
BFS17A
BFS17AR
D-74025
31-Oct-97
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BF173
Abstract: BF173 Transistor BF 145 transistor 569-GS transistor bc 7-40
Text: TELEFUNKEN ELECTRONIC filC D WÊ fiRSDGTb OOGSlbM BF173 '¡TitLitFOJJKliKGlM electronic Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: Video IF amplifier stages In common emitter configuration, especially In video IF power stages
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BF173
569-GS
BF173
BF173 Transistor
BF 145 transistor
transistor bc 7-40
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TT 2206 horizontal d
Abstract: tt 2206 horizontal TT 2206 5894 tube telefunken ra 200 amplifier 850 U01 5894 NSP2 tube 5894 QQE06-40
Text: Netzröhre fUr GW-Heizung indirekt geheizt Parallelspeisung DC-AC-Heating indirectly heated connected in parallel 5894 Q Q E 06/40 TELEFUNKEN Doppel-Tetrode Twin-tetrode Doppel-Tetrode mit innerer Neutralisation für HF-Verstärker, Oszillatoren, Frequenzvervielfacher und Modulatoren.
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temic 0675
Abstract: 7334
Text: Tem ic BFQ81 Semiconductors Silicon NPN Planer RF Transistor Applications Electrostatic sensitive device. Observe precautions for handling. M RF amplifier up to 2 GHz, especially for mobile telephone. Features • Small feedback capacitance • Low noise figure
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BFQ81
D-74025
31-Oct-97
temic 0675
7334
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MAR 641 TRANSISTOR
Abstract: transistor MAR 543 MAR 737 ic BFR92AR BFR92A mar 727 1646 IC 28B SOT-23 of ha 741 ic MAR 737
Text: Tem ic BFR92A/BFR92AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency BFR92A Marking: + P2 Plastic case SOT 23
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BFR92A/BFR92AR
BFR92A
BFR92AR
26-Mar-97
26-Mar
MAR 641 TRANSISTOR
transistor MAR 543
MAR 737 ic
mar 727
1646 IC
28B SOT-23
of ha 741 ic
MAR 737
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c3g tube
Abstract: UAG2 telefunken triode telefunken ra 200 telefunken tubes
Text: Netzröhre für GW-Heizung indirekt geheizt Parallelspeisung DC-AC-Heating indirectly heated connected in parallel T E | E E | | | | | I [ E | | IT « C O g P e n to d e fü r B r e it b a n d v e r s t ä r k e r P e n to d e fo r W id e - b a n d a m p lif ie r
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TUBE ecc 40
Abstract: ECC8100 rg105 rundfunkrohren
Text: Netzröhre für GW-Heizung indirekt geheizt Parallelspeisung DC-AC-Heating indirectly heated connected in parallel ECC 8100 TELEFUNKEN D o ppeltriode Tw in trio d e G e tre n n te K atho den , System I mit Neutrodenschirm fü r C ascode-Schaltungen, O s z illa to re n , B reitban dverstärker.
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50/oo
TUBE ecc 40
ECC8100
rg105
rundfunkrohren
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527H
Abstract: D 1413 transistor S822T
Text: T em ic S822T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. A Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features
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S822T
1300M
08-Apr-97
G8-Apr-97
527H
D 1413 transistor
S822T
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Untitled
Abstract: No abstract text available
Text: BAQ33.BAQ35 VISHAY _ ▼ Vishay Telefunken Silicon Planar Diodes Features • Very low reverse current i \ Applications Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers 94 9371 Absolute Maximum Ratings
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BAQ33.
BAQ35
BAQ33
BAQ34
BAQ35
50mmx50mmx1
01-Apr-99
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Untitled
Abstract: No abstract text available
Text: Temic BFR182T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. *" Applications For low-noise and high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features
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BFR182T
17-Apr-96
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Untitled
Abstract: No abstract text available
Text: Tem ic BFP182T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. £ Applications For low-noise and high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features
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BFP182T
17-Apr-96
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mar 618
Abstract: BFR93 transistor BFR93 Telefunken u 267 Marking A2 SOT-23 MAR 618 transistor
Text: Temic BFR93/BFR93R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • • • High power gain Low noise figure High transition frequency R n I—J B .
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BFR93/BFR93R
BFR93
BFR93R
26-Mar-97
mar 618
transistor BFR93
Telefunken u 267
Marking A2 SOT-23
MAR 618 transistor
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Untitled
Abstract: No abstract text available
Text: S858TA1 ym m f v Vishay Telefunken BIPMIC - Cascadable Silicon Bipolar Amplifier E le c tro s ta tic s e n s itiv e d e v ic e . O b s e rv e p re c a u tio n s fo r h a n d lin g . ^ M Applications G e n e ra l p u rp o s e 5 0 Q g a in b lo c k fo r n a rro w and b ro a d
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S858TA1
D-74025
20-Jan-99
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yd 803
Abstract: yd 803 2 ECC803S ecc803 telefunken ra 200 yd 803 a telefunken tubes
Text: Netzröhre für GW-Heizung indirekt geheizt Parallelspeisung DC-AC-Heating indirectly heated connected in parallel W N mI A m jV ECC 803 S 6057 TELEFUNKEN N F-D o p p eltrio d e mit getrennten K athoden A F-Tw in triode with se p a rate cathodes Zuverlässigkeit
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