S153P
Abstract: No abstract text available
Text: S153P Vishay Telefunken Silicon PIN Photodiode Description S153P is a high speed and high sensitive PIN photodiode in a hermetically sealed short TO–5 package. Due to its flat, waterclear glass window the device is sensitive to visible and near infrared radiation.
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S153P
S153P
D-74025
20-May-99
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S153P
Abstract: telefunken s153p
Text: S153P Vishay Telefunken Silicon PIN Photodiode Description S153P is a high speed and high sensitive PIN photodiode in a hermetically sealed short TO–5 package. Due to its flat, waterclear glass window the device is sensitive to visible and near infrared radiation.
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S153P
S153P
D-74025
20-May-99
telefunken s153p
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Untitled
Abstract: No abstract text available
Text: S153P Vishay Telefunken Silicon PIN Photodiode Description S153P is a high speed and high sensitive PIN photodiode in a hermetically sealed short TO–5 package. Due to its flat, waterclear glass window the device is sensitive to visible and near infrared radiation.
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S153P
S153P
D-74025
20-May-99
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temic k 153 p
Abstract: S153P
Text: TELEFUNKEN Semiconductors S 153 P Silicon PIN Photodiode Description S153P is a high speed and high sensitive PIN photodiode in a hermetically sealed short TO–5 package. Due to its flat, waterclear glass window the device is sensitive to visible and near infrared radiation.
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S153P
D-74025
temic k 153 p
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near IR sensors with daylight filter
Abstract: near IR photodiodes with daylight filter BPW 23 nf Telefunken Phototransistor photodiode application luxmeter Vishay Telefunken Phototransistor pin diodes radiation detector APPLICATION NOTE BpW34 photo voltaic cell BPW34 osram
Text: Vishay Telefunken Measurement Techniques Introduction The characteristics of optoelectronics devices given in the data sheets are verified either by 100% production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be divided into
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BPW-20R
Abstract: BPW20 large area quadrant photodiode BPV10NF BPV22NF BPW20R BPW34 BPW46 BPW97 S153P
Text: Vishay Telefunken Physics and Technology Emitters Materials vt vt 12.99 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si 94 8200
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telefunken s153p
Abstract: 8464 S153P
Text: S153P Silicon PIN Photodiode Description S153P is a high speed and high sensitive PIN photodiode in a hermetically sealed short TO–5 package. Due to its flat, waterclear glass window the device is sensitive to visible and near infrared radiation. The large active area combined with a flat case gives a
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S153P
S153P
D-74025
15-Jul-96
telefunken s153p
8464
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Photo diode TFK S 186 P
Abstract: IR diodes TFK S 186 P TFK S153P TFK BPW 41 N IR diode TFK 186 TFK BPW 20 TFK S 186 P monocrystalline solar cell power crest audio pro 8200 GERMANIUM phototransistor
Text: Infrared Emitters and Detectors Data Book 1997 Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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TDS05160
Abstract: TDS05150 TDS03160 TDS03150 TDSR5150 9999 DIODE tsop1736 TLU02401 BPW2 silver ag wire Bond
Text: V I^ W Y Vishay Telefunken Table of Package Forms Part Number Package Form Part Number Package Form Part Number Package Form TLBR5410 8 TLHR4401 11 TLMH3100 1 TLDR4400 11 TLHR4405 11 TLMH3101 1 TLDR4900 11 TLHR4600 11 TLMK3100 1 TLDR5400 TLDR5800 8 TLHR4601
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TLBR5410
TLDR4400
TLDR4900
TLDR5400
TLDR5800
TLHE4900
TLHE5100
TLHE5101
TLHE5102
TLHE5800
TDS05160
TDS05150
TDS03160
TDS03150
TDSR5150
9999 DIODE
tsop1736
TLU02401
BPW2
silver ag wire Bond
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BPW89
Abstract: S284P BPW21 BPW47B BPW98 BPW84 S213P BPW24R 810 W47A A953
Text: TELEFUNKEN ELECTRONIC HME ]> B flTEODTb Ü G 1 1 1 7 Q 3 B I a I g G Photo Detectors I I Phototransistors in Clear Plastic Package Phototransistors w ith Filter M atched for GaAs IREDs in Plastic Package Package Type • Characteristics Photo sensitive area
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820nm
BPV11
850nm
BPW89
S284P
BPW21
BPW47B
BPW98
BPW84
S213P
BPW24R 810
W47A
A953
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TDS05160
Abstract: TDSR5150 TDS05150 TDS03160 TDSR5160 TSOP1738 TDS03150 TDS01150 TDSR3150 TSOP1838
Text: VISH A Y Vishay Telefunken Y Alphanumeric Index Type Page Type Page Type Page 4N25 30 CNY17 G -2 32 TCDT1103(G) 33 4N25(G)V 32 CNY17(G)3 32 TCDT1110(G) 4N26 30 CNY64 35 4N27 30 CNY64A 35 4N28 30 CNY64B 4N32 30 4N33 30 4N35 Type Page 32 TDSL1150 TDSL1160 18
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BP104
BPV10
BPV10NF
BPV11
BPV11F
BPV20F
BPV21F
BPV22F
BPV22NF
BPV23F
TDS05160
TDSR5150
TDS05150
TDS03160
TDSR5160
TSOP1738
TDS03150
TDS01150
TDSR3150
TSOP1838
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BPW 64 photo
Abstract: BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na
Text: VISHAY Vishay Telefunken Selector Guide Detectors Photo Transistors C haracteristics Dim. Package Fig- Type Photo Sensitive Area / mm 2 lca / m A @ Ee /m W /c m 2 + /- q¡ V c e = 5 V, X = 950 nm 1 tr / (j.s @ (lc = 5 mA, X = RL /k Q 950 nm) Photo Transistors in Clear Plastic Package
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BPW16N
BPW17N
BPW85C
BPW96C
BPV11
BPV23FL
TESS5400
900nm)
BPW 64 photo
BPW 64 photo diode
77NB
D5100
77nA
BPW 56 photo
bpx43-5 smd
BPW 64
BPW 61
bpw 77na
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Untitled
Abstract: No abstract text available
Text: Temic S153P S e m i t i n (t u ( t n r s Silicon PIN Photodiode Description S153P is a high speed and high sensitive PIN photodiode in a herm etically sealed short T O -5 package. Due to its flat, w aterciear glass w indow the device is sen sitive to visible and near infrared radiation.
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S153P
S153P
Applica00
450nm
15-Jul-96
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S288P
Abstract: PW20R light dependent resistor circuit U6792 Near - Infrared Emitting Diod es BPW 23 nf photoconductive cells characteristic
Text: Tem ic Semiconductors Physics and Technology Emitters Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemen tal semiconductor silicon. the compound III-V semiconductors consists of two different elements of
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JRC 45600
Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES
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ZOP033
ZOP035
ZOP036
ZOP037
ZOP038
ZOP039
ZOP045
ZOP042
ZOP041
ZOP043
JRC 45600
YD 803 SGS
45600 JRC
TDA 7277
TDA 5072
krp power source sps 6360
2904 JRC
Sony
SHA T90 SA
philips HFE 4541
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