AD149
Abstract: ad 149 valvo transistoren valvo OC 74 germanium transistor valvo oc 26 valvo transistor valvo transistoren germanium AD-149 valvo germanium
Text: AD 149 GERMANIUM - PNP - NF - LEISTUNGSTRANSISTOR Mechanische Da ten; Gehäuse: Metall, JEDEC T0-3 3 A 2 DIN 41 872 Der Kollektor ist mit dem Gehäuse leitend verbunden. Für isolierten Einbau können Gl immerscheibe Typ P und Isolier buchsen (Typ C) gelie
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AD149
ad 149
valvo transistoren
valvo
OC 74 germanium transistor
valvo oc 26
valvo transistor
valvo transistoren germanium
AD-149
valvo germanium
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tunnel diodes
Abstract: germanium diode equivalent tunnel diode germanium TUNNEL DIODE germanium diode tunnel junction diode AEY16 AEY13 AEY15 germanium diode junction capacitance
Text: GERMANIUM T U N N EL DIODES AEYI3 AEYI5 AEYI6 TEN TA TIV E DATA Germanium tunnel diodes for use as low noise microwave am plifiers in S-band. QUICK REFERENCE DATA S-band f Operating frequency AEY13 AEY15 f min. r N s R esisitive cut-off frequency 6.0 8.0 Noise m easure
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AEY13
AEY15
AEY16
IB88331
AEY13-Page
tunnel diodes
germanium diode equivalent
tunnel diode
germanium TUNNEL DIODE
germanium diode
tunnel junction diode
AEY16
germanium diode junction capacitance
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W1P 59 transistor
Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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197/197X
S310N
W1P 59 transistor
W1p 48 TRANSISTOR
transistor w1P 83
ICM AP 1703
transistor SMD marked RNW
transistor BD139 PH 71
W1P 66 transistor
transistor w1P 91
Pnp transistor smd ba rn
w1p npn
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germanium transistor pnp
Abstract: Germanium germanium pnp XAI02 pnp germanium transistor germanium pnp transistor siemens crt EDISON transistor germanium
Text: MAZDA XAI02 R.F. TRANSISTOR Germanium PNP Junction Type _TEN TATIVE_ G EN ERA L The X A I0 2 is a pnp junction type tran sistor suitable fo r use as a frequency changer and/or oscillator on the medium and long wave bands. Th e elem ent of the tran sistor is herm e
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XAI02
germanium transistor pnp
Germanium
germanium pnp
pnp germanium transistor
germanium pnp transistor
siemens crt
EDISON
transistor germanium
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Germanium Power Devices
Abstract: germanium power devices corporation Germanium Power Diodes Photodiodes Germanium PIN Germanium power GAV100 GAV30 Germanium
Text: GPD GAV30 GAV40 GAV100 Ge Avalanche Photodiodes OTDR Infrared Sensing Telecommunications Optical Communications Short Haul Telecom/Datacom Receivers Germanium Power Devices Corporation GAV30 GAV40 GAV100 GAV30 GAV40 GAV100 Quantum Efficiency peak 72 (80)
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GAV30
GAV40
GAV100
GAV30
GAV100
MIL-I-45208.
Germanium Power Devices
germanium power devices corporation
Germanium Power Diodes
Photodiodes Germanium PIN
Germanium power
Germanium
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germanium power devices corporation
Abstract: Germanium Power Devices Germanium Power Diodes GAV30 GAV300 GAV60 MIL-45208 GAV100 TO46 germanium photodiode PIN
Text: GAV30 GAV60 GAV100 GAV300 OPTOELECTRONIC PRODUCTS Ge Avalanche Photodiodes •OTDR • Infrared Sensing • Telecommunications • Optical Communications • Short Haul Telecom/Datacom Receivers Germanium Power Devices Corporation • 3147375 DODDbSl ST 1 ■
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GAV30
GAV60
GAV100
GAV300
GAV60
germanium power devices corporation
Germanium Power Devices
Germanium Power Diodes
GAV300
MIL-45208
TO46
germanium photodiode PIN
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ac188k
Abstract: Transistor AC 188 ac188 AC 188 pnp transistor TO 1 valvo valvo transistoren valvo transistor AC 188 Transistor AC 188 k germanium transistor ac 188
Text: N ICH T FÜR N E U E N T W I C K L U N G E N GERMANIUM - P NP - NF - TRANSISTOR fUr Endstufen, als Transistorpaar für Gegentakt-B-Schaltungen, in Verbindung mit A C 18? E als komplementäres Paar Mechanische Daten: Gehäuse: Metall JEDEC TO-1 bzw. 1 A 3 nach D IN 41 871 in Ktthlklotz
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Untitled
Abstract: No abstract text available
Text: Tem ic TST0922 Semiconductors SiGe-Power Amplifier for GSM 900 Flipchip Version Description The TST0922 is a monolithic integrated power amplifier IC in flipchip technology. The device is manufactured using TEMIC Semiconductors’ Silicon-Germanium (SiGe) technology and has been designed for use in GSM
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TST0922
TST0922
D-74025
25-Mar-99
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Untitled
Abstract: No abstract text available
Text: TST0922 SiGe-Power Amplifier for GSM 900 Flipchip Version Description The TST0922 is a monolithic integrated power amplifier IC in flipchip technology. The device is manufactured using TEMIC Semiconductors’ Silicon-Germanium (SiGe) technology and has been designed for use in GSM
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TST0922
TST0922
D-74025
20-May-99
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Untitled
Abstract: No abstract text available
Text: Tem ic TST0922 Semiconductors SiGe-Power Amplifier for GSM 900 Flipchip Version Description The TST0922 is a monolithic integrated power amplifier IC in flipchip technology. The device is manufactured using TEMIC Semiconductors’ Silicon-Germanium (SiGe) technology and has been designed for use in GSM
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TST0922
TST0922
D-74025
20-May-99
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Untitled
Abstract: No abstract text available
Text: Temic TST0922 S e m i c o n d u c t o r s SiGe-Power Amplifier for GSM 900 Flipchip Version Description The TST0922 is a monolithic integrated power amplifier IC in flipchip technology. The device is manufactured using TEMIC Semiconductors’ Silicon-Germanium
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TST0922
TST0922
D-74025
25-Mar-99
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SSOP16
Abstract: T0786 IF SSOP16
Text: T0786 1800-2200 MHz High Linearity SiGe Active Transmit Mixer Description The T0786 is a high linearity active mixer which is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium technology. This mixer features a frequency range of 1800 to 2200 MHz. It operates from a single 5 V supply and provides 9 dB of conversion gain while requiring only 0 dBm input to the
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T0786
T0786
D-74025
15-Aug-01
SSOP16
IF SSOP16
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Untitled
Abstract: No abstract text available
Text: Tem ic TST0913 S e m i c o n d u c t o r s SiGe-Power Amplifier for GSM 1800/1900 DCS/PCS Description The TST0913 is a monolithic integrated power amplifier. The device is manufactured using TEMIC Semiconductors’ advanced Silicon-Germanium (SiGe) technology and has been designed for use in GSM
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TST0913
TST0913
1800/1900-MHz
D-74025
14-Apr-99
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T4512
Abstract: TST0913 TST0913-TJQ TST0913-TJS
Text: TST0913 SiGe Power Amplifier for GSM 1800/1900 DCS/PCS Description The TST0913 is a monolithic integrated power amplifier. The device is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium (SiGe) technology and has been designed for use in GSM
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TST0913
TST0913
1800/1900-MHz
D-74025
29-Sep-00
T4512
TST0913-TJQ
TST0913-TJS
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0603 footprint
Abstract: ATMEL 910 Atmel 710 0603 capacitor terminal footprint rfp 540 LL1608-FSR10J SSO16 SSOP16 T0780 R3R40
Text: T0780 800-1000 MHz High Linearity SiGe Active Receive Mixer Description The T0780 is a high-linearity active mixer which is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium technology. This mixer features a frequency range of 800 to 1000 MHz. It operates from a single 5 V supply and provides 10 dB of conversion gain while requiring only 0 dBm input to the
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T0780
T0780
D-74025
14-Aug-01
0603 footprint
ATMEL 910
Atmel 710
0603 capacitor terminal footprint
rfp 540
LL1608-FSR10J
SSO16
SSOP16
R3R40
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LL1608-FS12NJ
Abstract: SSOP16 T0787
Text: T0787 2300-2700 MHz High Linearity SiGe Active Transmit Mixer Description The T0787 is a high linearity active mixer which is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium technology. This mixer features a frequency range of 2300 to 2700 MHz. It operates from a single 5 V supply and provides 9 dB of conversion gain while requiring only 0 dBm input to the
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T0787
T0787
D-74025
15-Aug-01
LL1608-FS12NJ
SSOP16
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Untitled
Abstract: No abstract text available
Text: T0786 1800-2200 MHz High Linearity SiGe Active Transmit Mixer Description The T0786 is a high linearity active mixer which is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium technology. This mixer features a frequency range of 1800 to 2200 MHz. It operates from a single 5 V supply and provides 9 dB of conversion gain while requiring only 0 dBm input to the
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T0786
T0786
D-74025
14-Aug-01
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PDF
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Untitled
Abstract: No abstract text available
Text: T0787 2300-2700 MHz High Linearity SiGe Active Transmit Mixer Description The T0787 is a high linearity active mixer which is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium technology. This mixer features a frequency range of 2300 to 2700 MHz. It operates from a single 5 V supply and provides 9 dB of conversion gain while requiring only 0 dBm input to the
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T0787
T0787
D-74025
13-Aug-01
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rfp 540
Abstract: ATMEL 940 EHFFD1618
Text: T0785 800-1000 MHz High Linearity SiGe Active Transmit Mixer Description The T0785 is a high linearity active mixer which is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium technology. This mixer features a frequency range of 800 to 1000 MHz. It operates from a single 5 V supply and provides 7.5 dB of conversion gain while requiring only 0 dBm input to the
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T0785
T0785
D-74025
13-Aug-01
rfp 540
ATMEL 940
EHFFD1618
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0603 footprint
Abstract: TOKO transformer t9 0603 capacitor terminal footprint "IF transformer"
Text: T0781 1700-2000 MHz High Linearity SiGe Active Receive Mixer Description The T0781 is a high linearity active mixer which is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium technology. This mixer features a frequency range of 1700 - 2000 MHz. It operates from a single 5 V supply and provides 11 dB of conversion gain while requiring only 0 dBm input to the
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T0781
T0781
D-74025
14-Aug-01
0603 footprint
TOKO transformer t9
0603 capacitor terminal footprint
"IF transformer"
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ATMEL 740
Abstract: EHFFD1618 SMA 142-0701-851 ATMEL 940 142-0701-851 SSOP16 T0785 0603 footprint atmel 950
Text: T0785 800-1000 MHz High Linearity SiGe Active Transmit Mixer Description The T0785 is a high linearity active mixer which is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium technology. This mixer features a frequency range of 800 to 1000 MHz. It operates from a single 5 V supply and provides 7.5 dB of conversion gain while requiring only 0 dBm input to the
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T0785
T0785
D-74025
15-Aug-01
ATMEL 740
EHFFD1618
SMA 142-0701-851
ATMEL 940
142-0701-851
SSOP16
0603 footprint
atmel 950
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TST0913
Abstract: TST0913-TJQ TST0913-TJS avx microcontrollers PSSOP-16
Text: TST0913 SiGe-Power Amplifier for GSM 1800/1900 DCS/PCS Description The TST0913 is a monolithic integrated power amplifier. The device is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium (SiGe) technology and has been designed for use in GSM
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TST0913
TST0913
1800/1900-MHz
D-74025
29-Sep-00
TST0913-TJQ
TST0913-TJS
avx microcontrollers
PSSOP-16
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Untitled
Abstract: No abstract text available
Text: T0782 2200-2700 MHz High Linearity SiGe Active Receive Mixer Description The T0782 is a high linearity active mixer which is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium technology. This mixer features a frequency range of 2200 to -2700 MHz. It operates from a single 5 V supply and provides 10 dB of
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T0782
T0782
D-74025
14-Aug-01
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UL224D30
Abstract: UB880D radio fernsehen elektronik selen-gleichrichter L6516DG15 selengleichrichter L224D U6516dg bauelemente Kombinat D74LS999DK U6516D L6516DG15
Text: Typbezeichnung u nd K ennzeichnung von H alb le iterb a u e lem e n te n Dipl.-Ing. PETER H A N D R A C K Mitteilung aus dem V EB Kombinat Mikroelektronik Erfurt Ziel der Überarbeitung der TGL 38015 war es, sowohl die bei der A rbeit m it der beste henden Ausgabe gewonnenen Erfahrungen
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