1355065
Abstract: 108-18621
Text: 4 1 MATED WITH: PASSEND ZU: LOC AI 967402 REVISIONS DIST - P PROJEKT NR.: DESCRIPTION BESCHREIBUNG D1 92-52069 DATE REVISED PER ECO-11-005150 E REVISED PER PCN E-13-005564 DWN APVD 21MAR11 RK HMR 18APR2013 RD JG SECTION C-C Schnitt C-C -COUPLING-RING IN PRE-LOCKED POSITION
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ECO-11-005150
21MAR11
18APR2013
E-13-005564
11NOV1994
15NOV1994
15APR2013
A200779
1355065
108-18621
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uPD70F3123
Abstract: UPD76F BT600 upd70f3123gj uPD70F3123GJ-UEN ETB29 70F3123 PIN DIAGRAM OF 7 segment display LT 542 "lcd 2 8" KHN 10
Text: Preliminary User’s Manual V850E/CA1 TM ATOMIC 32-/16-bit Single-Chip Microcontroller Hardware µPD703123, µPD70F3123 Document No. U14913EE1V0UM00 Date Published October 2001 NEC Corporation 2001 Printed in Germany NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
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V850E/CA1
32-/16-bit
PD703123,
PD70F3123
U14913EE1V0UM00
ele88-6130
uPD70F3123
UPD76F
BT600
upd70f3123gj
uPD70F3123GJ-UEN
ETB29
70F3123
PIN DIAGRAM OF 7 segment display LT 542
"lcd 2 8"
KHN 10
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Untitled
Abstract: No abstract text available
Text: DRAW I MS MADE !N THIRD ¿N G LE P R O JE C TIO N THIS DRAWING IS UNPUBLISHED. COPY RIGHT 13 RELEASED SY AMP FOR LOC PUBLICATION INCORPORA T E D . ALL AF I N TEPN A T 1 ONAL R IG H T S R E SE R V E D . D IS T REVISION S 50 D E SC R IPT IO N REDRAWN PER 0710-0569-95
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02-JUGz9
12122/dwg2
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QA-2000
Abstract: TC-36B
Text: rEHEPATOPHbIM TETPOfl r C '3 6 B l E T R 'K reHepaTopHbm TeTpofl T C -36B npeflHa3Ha>HeH p j\9 \ ycuneHMfl moihhoctm b ycn/iM Tenax c p acnp eflen eH - T h e T C -36B tetrode is designed for pow er amplifi cation in distributed-gain am plifiers and single-sideband
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rC-36B
TC-36B
B03flyiuH0e
B03flEMCTBYI0LHME
flnana30H
QA-2000
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Untitled
Abstract: No abstract text available
Text: ADVANCE M IC R O N 4 MEG DRAM MODULE X M T10D440 40 DRAM M OD ULE 4 MEG x 40 DRAM FAST PAGE MODE FEATURES • • • • • Industry-standard 72-pin single in-line package High-performance CMOS silicon-gate process Single 5V ±10% pow er supply All device pins TTL-compatible
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72-pin
000mW
048-cycle
096-cycle
T10D440
DE-17)
MT10D440
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Untitled
Abstract: No abstract text available
Text: POS. M -n cn in & |lj + “ o NÛ -r ™ N x >' !x y x x x x x x x x x ^ x 'x F ¿8 RGW Xi @ X x X >; X X X X X X X X X X @ V X X K X X X X X X X X >\ X X X X AN ¿ S T E R /S K . , X' . , ' AN A S T E R IS K 'T1I Ä M A T E R IA L : - H O U S JM ü , T H E R M O P LA S T IC
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15TH/S
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54100A-C Advance Information 4M x 1 CMOS Dynamic RAM Page Mode Operating Temperature - 40 to + 85°C N PACKAGE 300 M IL SOJ CA SE 82 2 -0 3 ^ S p .n The M C M 5 4 1 0 0 A -C is a 0.7 j C M O S h ig h -s p e e d d yn a m ic random a ccess
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MCM54100A-C
4100A
54100ANC7O
54100AN
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Untitled
Abstract: No abstract text available
Text: B b ico K O M acT O T H M H H ig h -freq u e n c y n e H T o /i p e n to d e 7> K12C n p e flH a 3 HaqeH H anpH JK eH H H BH COKOH tia C T O T b l Ä a jib H e ft n p o B O Ä H O ö c b h 3 h . B b ic o K o q a c T O T H b ie K3IOTCH a w ith sh o rt c h a ra c te ris tic
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B03AeftcTBHi0
7X12C
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jd 1803 IC
Abstract: cctkc OB 3309 RP soviet cathode ray siek 1 6H23 DSAGER00034 ROD PENTODE S3 TRIO 64
Text: * HO* mm * HAi m y / K A T A JIO F CATALOGUE blnlk » Macxb 3 -iIO P r — OHHH H 3 K p y n H e illU H X B M H p e n p O M M L U JieH H O C T H . H3ZieJTHK 3 /ieK T p O H H O H 143HejTHH CO BeTCKO H 3 Jie K T p O H IfK H , 0 6 j i a j i a K > m H e BblCOKOH H a-
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143HejTHH
jd 1803 IC
cctkc
OB 3309 RP
soviet
cathode ray
siek 1
6H23
DSAGER00034
ROD PENTODE
S3 TRIO 64
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Untitled
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC 3ÖE D blllSMI G0DS1Ö1 I B M R N rm rr l*V vw*1-* V 1, g i f t innViliMfrfr^n i 1 MEG x 4 DRAM DRAM QUAD CAS PARITY, FAST PAGE MODE FEATURES Four independent CAS controls, allowing individual manipulation to each of the four data Input/O utput
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36bit
225mW
1024-cycle
MT4C4256DJ
T4C4259EJ
MT4C4259EJ
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nec A2C
Abstract: kmxx nec vt 575
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT _ / ¿ P D 4 2 1 1 6 5 1 M-BIT DYNAMIC RAM 64K-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D escription The î î PD421165 is a 65,536 words by 16 bits CMOS dynamic RAM with optional hyper page mode (EDO).
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64K-WORD
16-BIT,
uPD421165
/iPD421165
44-pin
40-pin
/jPD421165-25-A
pPD421165-30-A
pPD421165-25
jPD42
nec A2C
kmxx
nec vt 575
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b3E 1 • M IC R O N 2 MEG □RAM _ MODULE I V I V / iy blllSMT ÜDGÔlfiO 032 H M R N 2 MEG x X MT20D240 40 DRAM MODULE 40 DRAM FAST-PAGE-MODE MT20D240) lo w p o w e r, F EXTENDED Y T F M n F n R REFRESH F (MT20D240 L) V / FEATURES
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MT20D240
MT20D240)
MT20D240
72-Pin
DE-14)
MT20D240G
MT200240
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Untitled
Abstract: No abstract text available
Text: Timing Chart 1 Read Cycle tRC RAS \ V lH — V lL - tfiA S tCSH tRSM CAS VlHV lL - tRAD tRAL Use Ia sr A ddress tCPN V lH - V.L- mi Row 3 : tCAH Col. « : IIIIÌÌIII/Ì m tOCH toes ÎWEZ * : mwwwwwwm tOEA i tRAC tAA t0 6 2 tOLZ I/O V oh V o l- H i-Z m
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//77///77///7J///
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Untitled
Abstract: No abstract text available
Text: AMP ' 4 7 1 —6 REV 2 —01 MOO 1 2 4 LOC . DIST &D 39 REVISIONS p F ZONE LTR m EASED A R.ev-ecKj H"S ktV ELM APPROVED B b Z j w» V V, OATE DESCRIPTION ^ -4 /Ray E REVISED £C'2.8 h-CM o u 6048\4 v *£te. 2.f?-£i t P PER '15 ¿"¿/-fi E C U A W CABLE \
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Untitled
Abstract: No abstract text available
Text: BblCOKOHaCTOTHblH IieHTOfl C yflJIHHCHHOH XapaKTepHCTHKOH High-frequency pentode with a tailed characteristic curve I2K4 xaThe 12K4 high-frequency pentode with a tailed ycHJieHHH characteristic is designed for amplification of HanpH>KeHHH BblCOKOH MaCTOTbl.
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0Cj30pMJieHHH
Harpy30K
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bf37
Abstract: kvg crystal FILTER 41 bf
Text: KVG Q U A R TZ CRYSTAL TEC H NO LO G Y GIV1BH Standard Filter Cases A V E C T R O N IN T E R N A T IO N A L C O v O P A N Y tn ftj O 22,86*025 s GW 1EC 49 C0 208 in (VI ci *4 22,86*0,25 I* F > DIN ICC 49(00)208 Typ F01 ru 1 « IN £5*0.1 ' 2 * OUT 1 5 < 1 - IN
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nox38
nax19
nqx18
BF-37
BF-41
BF-40
BF-54
BF-71
BF-68
BF-78
bf37
kvg crystal FILTER
41 bf
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K140MA1
Abstract: K190KT2 K174YH7 K554CA2 k159ht1 hj3h 190KT2 transistor k513 K190KT1 K159
Text: HHfErPAIIbHbli NHKPOCXENbl INTEGRATED MICROCIRCUITS MHTETPAJlbHblE MklKPOCXEMbl IN TEG R A TED M ICRO CIRCU ITS M acTb Partii II AH AJIOrOBblE M HTETPAJlbHblE MklKPOCXEM bl IN TEGRATED ANALOG M ICRO CIRCUITS 3 ne«TpoHHan npoHbim neMHocTb C C C P - oamh mi xpynHeHuiHX b MMpe npoMJBOAHTeneü BbicoKoxanecTBeHHbix M3 AenMM jneKTpoHHoM tcxhm km , KoTopbie b HaCToMLijee sperm
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766b/6o
16pins
55max
2263M
K140MA1
K190KT2
K174YH7
K554CA2
k159ht1
hj3h
190KT2
transistor k513
K190KT1
K159
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Untitled
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC » 14E D DRAM B fe.1115 4 i 0 0 0 0 0 4 ^ *1 B 1MEG x 1 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View • Industry standard x l pin-out, timing, functions and packages • High performance, CMOS silicon gate process • Single +5V±10% power supply
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175mW
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Untitled
Abstract: No abstract text available
Text: MICRON • 256K technCLOGV. inc. MICRON T E C H N O L O G Y INC SSE T> DRAM MODULE MT8D25632 32, 512K X 16 DRAM MODULE iu r n ■ blllSMT D Q D 4 7 b 7 4 E5 X 256K X 32, 512K x 16 FAST PAGE MODE MT8D25632 LOW POWER, EXTENDED REFRESH (MT8D25632 L) FEATURES
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MT8D25632
72-pin
512-cycle
YCLE24
0G04777
T8D25632
MT8025632
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