3N141
Abstract: tetrode
Text: 3N141 N-Channel; Dual-Gate Tetrode MOSFET 5.63 Transistors MOSFETs and TempF. Page 1 of 1 Enter Your Part # Home Part Number: 3N141 Online Store 3N141 Diodes N-Channel; Dual -Gate Tetrode MOSFET Transistors Integrated Circuits checkout.* Optoelectronics
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3N141
3N141
com/3n141
tetrode
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3N200 MOSFET
Abstract: 3N200
Text: 3N200 N-Channel; Dual-Gate Tetrode MOSFET 5.63 Transistors MOSFETs and TempF. Page 1 of 1 Enter Your Part # Home Part Number: 3N200 Online Store 3N200 Diodes N-Channel; Dual -Gate Tetrode MOSFET Transistors Integrated Circuits checkout.* Optoelectronics
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3N200
3N200
com/3n200
3N200 MOSFET
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3n159
Abstract: dual-gate
Text: 3N159 N-Channel; Dual-Gate Tetrode MOSFET 6.38 Transistors MOSFETs and TempF. Page 1 of 1 Enter Your Part # Home Part Number: 3N159 Online Store 3N159 Diodes N-Channel; Dual-Gate Tetrode MOSFET Transistors Enter code INTER3 at checkout.* Integrated Circuits
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3N159
3N159
com/3n159
dual-gate
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BF998
Abstract: application BF998 bf998w 3G1 transistor
Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration
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BF998.
BF998
BF998R
BF998W
OT143
OT143R
OT343
BF998,
BF998W
application BF998
3G1 transistor
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bf998
Abstract: application BF998 TRANSISTOR mosfet BF998
Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration
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BF998.
BF998
BF998R
OT143
OT143R
BF998,
BF998R
application BF998
TRANSISTOR mosfet BF998
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bf998
Abstract: bf998 mosfet tetrode application note bf998w TRANSISTOR mosfet BF998 BF998R
Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration
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BF998.
BF998
OT143
BF998R
OT143R
BF998W
OT343
BF998,
Feb-13-2004
bf998
bf998 mosfet tetrode application note
bf998w
TRANSISTOR mosfet BF998
BF998R
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bf998
Abstract: application BF998 TRANSISTOR mosfet BF998 bf-998 bf998 mosfet tetrode application note
Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration
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BF998.
BF998
BF998R
OT143
OT143R
BF998,
application BF998
TRANSISTOR mosfet BF998
bf-998
bf998 mosfet tetrode application note
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BF998
Abstract: No abstract text available
Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration
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BF998.
BF998
BF998R
BF998W
OT143
OT143R
OT343
BF998,
BF998W
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TRANSISTOR mosfet BF998
Abstract: No abstract text available
Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration
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BF998.
BF998
BF998R
BF998W
OT143
OT143R
OT343
BF998,
BF998W
TRANSISTOR mosfet BF998
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BF998W
Abstract: 998 transistor bf998 102001 transistor BF 998
Text: BF998W Silicon N-Channel MOSFET Tetrode 3 Short-channel transistor 4 with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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BF998W
VPS05605
OT343
EHT07305
EHT07306
Aug-10-2001
BF998W
998 transistor
bf998
102001
transistor BF 998
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BF998R
Abstract: 998 transistor transistor BF 998
Text: BF998R Silicon N-Channel MOSFET Tetrode Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF998R MRs Pin Configuration
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BF998R
OT143R
sold00
EHT07305
EHT07306
Aug-10-2001
BF998R
998 transistor
transistor BF 998
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SOT-343
Abstract: G1 TRANSISTOR TRANSISTOR mosfet BF998 SOT 343 MARKING BF mosfet tetrode Marking G2 transistor marking code G1 BF998 marking code 1D TRANSISTOR bf998 mosfet tetrode application note
Text: BF 998W Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BF998
Q62702-F1586
OT-343
Jul-30-1996
SOT-343
G1 TRANSISTOR
TRANSISTOR mosfet BF998
SOT 343 MARKING BF
mosfet tetrode
Marking G2
transistor marking code G1
BF998 marking code
1D TRANSISTOR
bf998 mosfet tetrode application note
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BF998
Abstract: G1 TRANSISTOR Marking G2 mosfet tetrode TRANSISTOR mosfet BF998 BF998 marking code BF marking code BF transistor datasheet transistor marking G1 electrostatic discharge
Text: BF 998R Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BF998
Q62702-F1177
OT-143R
Oct-23-1996
BF998
G1 TRANSISTOR
Marking G2
mosfet tetrode
TRANSISTOR mosfet BF998
BF998 marking code
BF marking code
BF transistor datasheet
transistor marking G1
electrostatic discharge
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BF998W
Abstract: SOT 343 MARKING BF BF998
Text: BF998W Silicon N-Channel MOSFET Tetrode 3 Short-channel transistor 4 with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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BF998W
VPS05605
OT-343
Cha00
EHT07305
EHT07306
May-05-1999
BF998W
SOT 343 MARKING BF
BF998
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bf998
Abstract: bf998 mosfet tetrode application note VPS05178
Text: BF998 Silicon N-Channel MOSFET Tetrode 3 Short-channel transistor with high S/C quality factor 4 For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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BF998
VPS05178
OT143
EHT07305
EHT07306
Aug-10-2001
bf998
bf998 mosfet tetrode application note
VPS05178
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k d 998 0
Abstract: transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998
Text: BF 998 Silicon N-Channel MOSFET Tetrode 3 Short-channel transistor with high S/C quality factor 4 For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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VPS05178
OT-143
Res00
EHT07305
EHT07306
Oct-26-1999
k d 998 0
transistor BF 998
998 transistor
bf998
EHT0730
VPS05178
BF 998
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S887T
Abstract: 1s887
Text: S 887 T TELEFUNKEN Semiconductors N-channel dual gate MOS-fieldeffect tetrode. Depletion mode. Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for UHF TV-tuners. Features D Integrated gate protection diodes
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D-74025
S887T
1s887
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12DV8
Abstract: transistor af 126 ET-T1458 tetrode transistor Scans-0017277 general electric
Text: 12DV8 12DV8 ET-T1458 P age 1 DUPLEX-DIODE TETRODE 5-57 FOR DETECTOR AND A F DRIVER APPLICATIONS IN AUTOMOBILE RECEIVERS TUBES ^DESCRIPTION AND RATING= The 12DV8 is a miniature duplex-diode, space-charge-grid tetrode intended for use as a combined detector, AVC rectifier, and transistor driver. The tetrode
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12DV8
12DV8
ET-T1458
12-volt
transistor af 126
ET-T1458
tetrode transistor
Scans-0017277
general electric
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12ds7
Abstract: 12ds7 tube Scans-0017276 general electric
Text: 12DS7 12DS7 ET-T1551 Page 1 DUPLEX-DIODE TETRODE TUBES 9-59 FOR DETECTOR AND AF DRIVER APPLICATIONS IN AUTOMOBILE RECEIVERS DESCRIPTION A N D RATINGS T h e 12DS7 is a m iniature duplex-diode, space-charge-grid tetrode intended for use as a com bined detector, A V C rectifier, an d transistor driver. T h e tube
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12DS7
ET-T1551
12DS7
12-volt
K-556
I-TD84-
K-556II-TD84-2
12ds7 tube
Scans-0017276
general electric
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"Frequency Tripler"
Abstract: 40647 Tripler noval socket philips 9 pin Frequency tripler
Text: PHILIPS QQC03/14 QUICK HEATING DOUBLE TETRODE for use as output tube, frequency multiplier or modulator. The tube has been designed for intermittent filament service in transistorized mobile equipment FILAMENT: oxide coated HEATING: direct; parallel supply
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QQC03/14
"Frequency Tripler"
40647
Tripler
noval socket philips 9 pin
Frequency tripler
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TRANSISTOR mosfet BF998
Abstract: BF998 SIEMENS BF998 marking code
Text: SIEMENS BF 998W Silicon N-Channel MOSFET Tetrode • Shorl-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BF998
Q62702-F1586
OT-343
TRANSISTOR mosfet BF998
BF998 SIEMENS
BF998 marking code
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Untitled
Abstract: No abstract text available
Text: SIEMENS BF 998W Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BF998
Q62702-F1586
OT-343
fl235bG5
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Untitled
Abstract: No abstract text available
Text: SIEMENS BF 2000W Silicon N Channel MOSFET Tetrode Target data sheet • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking BF 2000W NDs Ordering Code Pin Configuration Q62702-F1772
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Q62702-F1772
OT-343
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Untitled
Abstract: No abstract text available
Text: • 7110öEb D0bfi7QS m s ■PHIN BF991 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S0T143 microminiature envelope with source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.
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BF991
S0T143
SQT103
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