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    TETRODE TRANSISTOR Search Results

    TETRODE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TETRODE TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3N141

    Abstract: tetrode
    Text: 3N141 N-Channel; Dual-Gate Tetrode MOSFET 5.63 Transistors MOSFETs and TempF. Page 1 of 1 Enter Your Part # Home Part Number: 3N141 Online Store 3N141 Diodes N-Channel; Dual -Gate Tetrode MOSFET Transistors Integrated Circuits checkout.* Optoelectronics


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    PDF 3N141 3N141 com/3n141 tetrode

    3N200 MOSFET

    Abstract: 3N200
    Text: 3N200 N-Channel; Dual-Gate Tetrode MOSFET 5.63 Transistors MOSFETs and TempF. Page 1 of 1 Enter Your Part # Home Part Number: 3N200 Online Store 3N200 Diodes N-Channel; Dual -Gate Tetrode MOSFET Transistors Integrated Circuits checkout.* Optoelectronics


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    PDF 3N200 3N200 com/3n200 3N200 MOSFET

    3n159

    Abstract: dual-gate
    Text: 3N159 N-Channel; Dual-Gate Tetrode MOSFET 6.38 Transistors MOSFETs and TempF. Page 1 of 1 Enter Your Part # Home Part Number: 3N159 Online Store 3N159 Diodes N-Channel; Dual-Gate Tetrode MOSFET Transistors Enter code INTER3 at checkout.* Integrated Circuits


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    PDF 3N159 3N159 com/3n159 dual-gate

    BF998

    Abstract: application BF998 bf998w 3G1 transistor
    Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration


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    PDF BF998. BF998 BF998R BF998W OT143 OT143R OT343 BF998, BF998W application BF998 3G1 transistor

    bf998

    Abstract: application BF998 TRANSISTOR mosfet BF998
    Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration


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    PDF BF998. BF998 BF998R OT143 OT143R BF998, BF998R application BF998 TRANSISTOR mosfet BF998

    bf998

    Abstract: bf998 mosfet tetrode application note bf998w TRANSISTOR mosfet BF998 BF998R
    Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration


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    PDF BF998. BF998 OT143 BF998R OT143R BF998W OT343 BF998, Feb-13-2004 bf998 bf998 mosfet tetrode application note bf998w TRANSISTOR mosfet BF998 BF998R

    bf998

    Abstract: application BF998 TRANSISTOR mosfet BF998 bf-998 bf998 mosfet tetrode application note
    Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration


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    PDF BF998. BF998 BF998R OT143 OT143R BF998, application BF998 TRANSISTOR mosfet BF998 bf-998 bf998 mosfet tetrode application note

    BF998

    Abstract: No abstract text available
    Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration


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    PDF BF998. BF998 BF998R BF998W OT143 OT143R OT343 BF998, BF998W

    TRANSISTOR mosfet BF998

    Abstract: No abstract text available
    Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration


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    PDF BF998. BF998 BF998R BF998W OT143 OT143R OT343 BF998, BF998W TRANSISTOR mosfet BF998

    BF998W

    Abstract: 998 transistor bf998 102001 transistor BF 998
    Text: BF998W Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor 4 with high S/C quality factor  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


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    PDF BF998W VPS05605 OT343 EHT07305 EHT07306 Aug-10-2001 BF998W 998 transistor bf998 102001 transistor BF 998

    BF998R

    Abstract: 998 transistor transistor BF 998
    Text: BF998R Silicon N-Channel MOSFET Tetrode  Short-channel transistor with high S/C quality factor  For low-noise, gain-controlled input stages up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF998R MRs Pin Configuration


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    PDF BF998R OT143R sold00 EHT07305 EHT07306 Aug-10-2001 BF998R 998 transistor transistor BF 998

    SOT-343

    Abstract: G1 TRANSISTOR TRANSISTOR mosfet BF998 SOT 343 MARKING BF mosfet tetrode Marking G2 transistor marking code G1 BF998 marking code 1D TRANSISTOR bf998 mosfet tetrode application note
    Text: BF 998W Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF BF998 Q62702-F1586 OT-343 Jul-30-1996 SOT-343 G1 TRANSISTOR TRANSISTOR mosfet BF998 SOT 343 MARKING BF mosfet tetrode Marking G2 transistor marking code G1 BF998 marking code 1D TRANSISTOR bf998 mosfet tetrode application note

    BF998

    Abstract: G1 TRANSISTOR Marking G2 mosfet tetrode TRANSISTOR mosfet BF998 BF998 marking code BF marking code BF transistor datasheet transistor marking G1 electrostatic discharge
    Text: BF 998R Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF BF998 Q62702-F1177 OT-143R Oct-23-1996 BF998 G1 TRANSISTOR Marking G2 mosfet tetrode TRANSISTOR mosfet BF998 BF998 marking code BF marking code BF transistor datasheet transistor marking G1 electrostatic discharge

    BF998W

    Abstract: SOT 343 MARKING BF BF998
    Text: BF998W Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor 4 with high S/C quality factor  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


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    PDF BF998W VPS05605 OT-343 Cha00 EHT07305 EHT07306 May-05-1999 BF998W SOT 343 MARKING BF BF998

    bf998

    Abstract: bf998 mosfet tetrode application note VPS05178
    Text: BF998 Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor with high S/C quality factor 4  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


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    PDF BF998 VPS05178 OT143 EHT07305 EHT07306 Aug-10-2001 bf998 bf998 mosfet tetrode application note VPS05178

    k d 998 0

    Abstract: transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998
    Text: BF 998 Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor with high S/C quality factor 4  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


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    PDF VPS05178 OT-143 Res00 EHT07305 EHT07306 Oct-26-1999 k d 998 0 transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998

    S887T

    Abstract: 1s887
    Text: S 887 T TELEFUNKEN Semiconductors N-channel dual gate MOS-fieldeffect tetrode. Depletion mode. Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for UHF TV-tuners. Features D Integrated gate protection diodes


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    PDF D-74025 S887T 1s887

    12DV8

    Abstract: transistor af 126 ET-T1458 tetrode transistor Scans-0017277 general electric
    Text: 12DV8 12DV8 ET-T1458 P age 1 DUPLEX-DIODE TETRODE 5-57 FOR DETECTOR AND A F DRIVER APPLICATIONS IN AUTOMOBILE RECEIVERS TUBES ^DESCRIPTION AND RATING= The 12DV8 is a miniature duplex-diode, space-charge-grid tetrode intended for use as a combined detector, AVC rectifier, and transistor driver. The tetrode


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    PDF 12DV8 12DV8 ET-T1458 12-volt transistor af 126 ET-T1458 tetrode transistor Scans-0017277 general electric

    12ds7

    Abstract: 12ds7 tube Scans-0017276 general electric
    Text: 12DS7 12DS7 ET-T1551 Page 1 DUPLEX-DIODE TETRODE TUBES 9-59 FOR DETECTOR AND AF DRIVER APPLICATIONS IN AUTOMOBILE RECEIVERS DESCRIPTION A N D RATINGS T h e 12DS7 is a m iniature duplex-diode, space-charge-grid tetrode intended for use as a com bined detector, A V C rectifier, an d transistor driver. T h e tube


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    PDF 12DS7 ET-T1551 12DS7 12-volt K-556 I-TD84- K-556II-TD84-2 12ds7 tube Scans-0017276 general electric

    "Frequency Tripler"

    Abstract: 40647 Tripler noval socket philips 9 pin Frequency tripler
    Text: PHILIPS QQC03/14 QUICK HEATING DOUBLE TETRODE for use as output tube, frequency multiplier or modulator. The tube has been designed for intermittent filament service in transistorized mobile equipment FILAMENT: oxide coated HEATING: direct; parallel supply


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    PDF QQC03/14 "Frequency Tripler" 40647 Tripler noval socket philips 9 pin Frequency tripler

    TRANSISTOR mosfet BF998

    Abstract: BF998 SIEMENS BF998 marking code
    Text: SIEMENS BF 998W Silicon N-Channel MOSFET Tetrode • Shorl-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF BF998 Q62702-F1586 OT-343 TRANSISTOR mosfet BF998 BF998 SIEMENS BF998 marking code

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 998W Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF BF998 Q62702-F1586 OT-343 fl235bG5

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 2000W Silicon N Channel MOSFET Tetrode Target data sheet • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking BF 2000W NDs Ordering Code Pin Configuration Q62702-F1772


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    PDF Q62702-F1772 OT-343

    Untitled

    Abstract: No abstract text available
    Text: • 7110öEb D0bfi7QS m s ■PHIN BF991 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S0T143 microminiature envelope with source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.


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    PDF BF991 S0T143 SQT103