BUX48
Abstract: TRANSISTOR BIPOLAR 400V 20A 10a 400v bipolar transistor BUX48A
Text: BUX48 High Power Bipolar Transistor High Voltage Switching Features: • Collector-Emitter sustaining voltageVCEO sus = 400V (Minimum) - BUX48 = 450V (Minimum) - BUX48A. • Collector-Emitter saturation voltageVCE(sat) = 1.5V (Maximum) at IC = 10A for BUX48
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BUX48
BUX48A.
BUX48A
BUX48
TRANSISTOR BIPOLAR 400V 20A
10a 400v bipolar transistor
BUX48A
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IXGH10N300
Abstract: 1200v 30A to247 20A400 ixys ixgh10n300
Text: Advance Technical Information IXGH10N300 High Voltage IGBT VCES = 3000V = 10A IC90 VCE sat ≤ 3.5V For Capacitor Discharge Applications TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings VGES
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IXGH10N300
O-247
062in.
10N300
IXGH10N300
1200v 30A to247
20A400
ixys ixgh10n300
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage IGBT VCES = 3000V IC90 = 10A VCE sat ≤ 3.5V IXGH10N300 For Capacitor Discharge Applications TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings VGES
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IXGH10N300
O-247
062in.
10N300
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2a 250v 130c
Abstract: No abstract text available
Text: CEMENT THERMAL FUSIBLE RESISTORS • Self extinguishing • Excellent flame and moisture resistance • Extremely small and mechanically safe • Provides outstanding feature against surges • Too low or too high ohmic values on Wire-wound & Power Film type can be supplied on a case to
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FTR10
2a 250v 130c
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Untitled
Abstract: No abstract text available
Text: CEMENT THERMAL FUSIBLE RESISTORS • Self extinguishing • Excellent flame and moisture resistance • Extremely small and mechanically safe • Provides outstanding feature against surges • Too low or too high ohmic values on Wire-wound & Power Film type can be supplied on a case to
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FTR10
350PPM/
400PPM/
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power switching 10 amp 60V
Abstract: MJ10012 MJ1001 8805 VOLTAGE REGULATOR 100 amp npn darlington power transistors NPN DARLINGTON 10A 400V npn darlington transistor 150 watts MJ-10012 npn darlington transistor 200 watts
Text: MJ10012 Darlington Power Transistor NPN Silicon Power Darlington Transistors is a high-voltage, high-current transistor, designed for automotive ignition, switching regulator and motor applications. Features: • Continuous Collector Current - IC = 10A. • Collector-Emitter Sustaining Voltage VCEO sus = 400V (Minimum).
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MJ10012
power switching 10 amp 60V
MJ10012
MJ1001
8805 VOLTAGE REGULATOR
100 amp npn darlington power transistors
NPN DARLINGTON 10A 400V
npn darlington transistor 150 watts
MJ-10012
npn darlington transistor 200 watts
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2N6438
Abstract: No abstract text available
Text: 2N6438 Power Transistor Designed for use in industrial power amplifiers and switching circuit applications. Features: • High DC Current Gain. • hFE = 20 - 80 at IC = 10A = 12 Minimum at IC = 25A. • Low Collector-Emitter Saturation Voltage. VCE(sat) = 1.0V (Maximum) at IC = 10A, IB = 1.0A.
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2N6438
2N6438
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HX8353D
Abstract: HX8353
Text: DATA SHEET DOC No. HX8353-D-DS HX8353-D 132RGB x 162 dots, 262K color, with Internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 Apr, 2010 HX8353-D 132RGB x 162 dot, 262K Color, with Internal GRAM, TFT Mobile Single Chip Driver List of Contents
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HX8353-D-DS
HX8353-D
132RGB
HX8353D
300um
250um
227Apr,
HX8353
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NTE135A
Abstract: NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159
Text: REPLACEMENT SEMICONDUCTOR KITS NTEKCOM SERIES REPLACEMENT SEMICONDUCTOR KITS Each kit is housed in a 30–drawer cabinet and comes with an NTE Semiconductor Technical Guide and Cross Reference. All devices provided in these kits are also available separately.
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NTE109
NTE116
NTE123AP
NTE125
NTE128P
NTE2396
NTE2397
NTE2398
NTE5127A
NTE5304
NTE135A
NTE116 cross reference
transistor power
NTE2396
2 Amp rectifier diode
NTE5127A
nte159
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Untitled
Abstract: No abstract text available
Text: RQ1E100XN Nch 30V 10A Power MOSFET Datasheet lOutline VDSS 30V RDS on (Max.) 10.5mW ID 10A PD 1.5W lFeatures (8) (7) (6) (5) TSMT8 (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) Built-in G-S Protection Diode.
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RQ1E100XN
R1120A
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PDF
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Untitled
Abstract: No abstract text available
Text: RQ1E100XN Nch 30V 10A Power MOSFET Datasheet lOutline VDSS 30V RDS on (Max.) 10.5mW ID 10A PD 1.5W lFeatures (8) (7) (6) (5) TSMT8 (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) Built-in G-S Protection Diode.
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RQ1E100XN
R1120A
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PDF
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Untitled
Abstract: No abstract text available
Text: RQ1E100XN Datasheet Nch 30V 10A Power MOSFET lOutline VDSS 30V RDS on (Max.) 10.5mW ID 10A PD 1.5W lFeatures (8) (7) (6) (5) TSMT8 (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) Built-in G-S Protection Diode.
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RQ1E100XN
R1120A
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PDF
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Untitled
Abstract: No abstract text available
Text: RQ1E100XN Datasheet Nch 30V 10A Power MOSFET lOutline VDSS 30V RDS on (Max.) 10.5mW ID 10A PD 1.5W lFeatures (8) (7) (6) (5) TSMT8 (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) Built-in G-S Protection Diode.
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RQ1E100XN
R1120A
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2SK3599-01MR
Abstract: No abstract text available
Text: 2SK3599-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)
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2SK3599-01MR
O-220F
2SK3599-01MR
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Untitled
Abstract: No abstract text available
Text: 2SK3600-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply)
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2SK3600-01L
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2sk3601
Abstract: 2SK3601-01
Text: 2SK3601-01 FUJI POWER MOSFET FUJI POWER MOS FET MOSFET N-CHANNEL SILICON POWER Super FAP-G Series OUT VIEW Outline Drawings mm 外形寸法図 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Fig.1 Ｐ矢視図参照
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2SK3601-01
2sk3601
2SK3601-01
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EIA-541
Abstract: IRF7751
Text: PD - 94002 IRF7751 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -30V 35mΩ@VGS = -10V 55mΩ@VGS = -4.5V -4.5A -3.8A Description HEXFET® power MOSFETs from International Rectifier
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IRF7751
EIA-481
EIA-541.
EIA-541
IRF7751
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MJ10004
Abstract: MJ-10004 OB 2268 darlington power transistor 10a
Text: MJ10004 Darlington Power Transistor Switchmode series NPN Silicon Power Darlington Transistors with Base-Emitter speedup diode are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line
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MJ10004
MJ10004
MJ-10004
OB 2268
darlington power transistor 10a
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thermal fuse 125 250V 2A
Abstract: TC ROYALOHM 05S2 ROYALOHM DL002
Text: ROYALOHM Cement Thermal Fusible Resistors Performance Specification Temperature Coefficient <20Q: ±400PPM/°C; >20Q: +350PPM/°C Short Time Overload ± 5.0% + 0.05i2 Max, with no evidence of mechanical damage. Dielectric Withstanding Voltage No evidence of flashover, mechanical damage, arcing or Insulation breakdown.
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400PPM/Â
350PPM/Â
100KQ:
360S2
thermal fuse 125 250V 2A
TC ROYALOHM
05S2
ROYALOHM
DL002
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20-nsec
Abstract: Tf 227 10A
Text: ^ A General NPN 2^* Semiconductor Industries, Inc. TRAN SISTO R CHIP " 35 2 " DIODE & TRANSISTOR CHIPS 15 AMP Ultra Fast Switching Bonding Pad Areas Base 1 1 7 2 x 2 3 .7 mils Emitter (1 )1 5 7 .5 x 26 mils Front Metallization: Aluminum Back Metallization:
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OCR Scan
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20nsec
90nsec
800nsec
50nsec
20-nsec
Tf 227 10A
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NTE130
Abstract: NTE199 NTE234 NTE192A 27MHZ NTE196 NTE197 T092 T092H NTE192
Text: N T E ELECTRONICS INC S2E D • b M B l S S ^ a D O S S I 6 024 B I N T E TRANSI5TÖ BS-6U PO LA B T —33—01 Maximum Breakdown Voltage Collector to Base Volts) Collector to Emitter (Volts) Emitter Io Basa (Volts) Typical Forward Current Gain Maximum Collector
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OCR Scan
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T-33-01
NTE192A)
T092HS
27MHZ,
226MP
NTE226
T0237
45MHZ
NTE199)
50MHZ)
NTE130
NTE199
NTE234
NTE192A
27MHZ
NTE196
NTE197
T092
T092H
NTE192
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251C
Abstract: 2SB1156 2SD1707
Text: Power Transistors 2SB1156 2SB1156 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2S D 1707 U nit : ram 5 2 max. . 15.5max- • Features ' 6.9m in. "U.2 • Low collector-eim itter saturation voltage VcEisao • Good linearity of DC c u rre n t gain (hFE)
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2SB1156
2SD1707
-55-rent
VCC--50V
DGlb231
251C
2SB1156
2SD1707
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NTE130
Abstract: 27mhz rf amplifier NTE197 NTE199 NTE241 16 amp npn darlington power transistors t03 27mhz rf ic NTE196 NTE210 NTE211
Text: BI-POLAR TRANSISTORS Maximum Collector Power Dissipation Watts BV ebo " fe Pd *T 4 30 Min 8 150 80 (CER) 5 20 Min 50* 1.8 4 80 (CER) 5 20 Min 50* 4 Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) 'c 1.5 BVcbo BVceo 70 70 (CER)
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OCR Scan
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27MHz,
NTE197)
T0220
NTE196)
27MHz)
T039HS
NTE130
27mhz rf amplifier
NTE197
NTE199
NTE241
16 amp npn darlington power transistors t03
27mhz rf ic
NTE196
NTE210
NTE211
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PDF
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Untitled
Abstract: No abstract text available
Text: SGL10N60RUFD CO-PAK IGBT FEATURES * Short Circuit rated 10uS @ T c = 1 0 0 "C * High S peed Switching * Low Saturation V olatge : V CE sat = 1.95 V @ lc = 1 0 A * High Input Im pedance * C O -P A K , IG B T with F R D :T r r = 4 2 n S (Typ) APPLICATIONS *
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SGL10N60RUFD
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