MMBD2104
Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a
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BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
LL914
LL4150,
MMBD2104
Transistor NEC 05F
hp2835 diode
ZENER DIODE t2d
what is the equivalent of ZTX 458 transistor
MMBD2103
T2D DIODE 3w
T2D 8N
2n2222 as equivalent for bfr96
mmbf4932
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MMBD2103
Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
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BZV49
BZV55
500mW
BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
MMBD2103
ZENER DIODE t2d
MMBD2101
MMBD2102
MMBD2104
SMD codes
bc107 TRANSISTOR SMD CODE PACKAGE SOT23
Transistor NEC 05F
BAT15-115S
NDS358N
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SMD Codes
Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
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BZV49
BZV55
500mW
BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
SMD Codes
TRANSISTOR SMD T1P
MMBD2104
BAW92
smd transistor A6a
schottky diode s6 81A
a4s smd transistor
Transistor SMD a7s
transistor SMD P2F
MMBD2101
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Untitled
Abstract: No abstract text available
Text: •n ip tfk ' {<p( i( _>| CUSTOM PART ORDER FORM C ry sta ls COMPANY INFORMATION F o r a c u s t o m p a r t n u m b e r , f i l l o u t t h e f o r m b e lo w a n d f a x It t o u s a t ( 7 1 4 ) 4 3 3 - 1 2 3 4 . Your Name: Company Name: Phone Number:
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HC-49/US
HC-49/UP
HC-49/U
800-ECLIPTEK
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BA1310
Abstract: BAI310 560mVrms 3AA1
Text: . R .o h m QUALITY- RELIABILITY BA i 310 ;l. s P L L JjxK ft iStifFI L t FM 7 JU9 J U v ? ^ (Physical Dimensions U /j f S f c H & B ilC r ? « P L L # j£ t f)fc tfK æ¿ft u % r - r « £ fcs * n « . s . b < K t < r o • « ft (Features) j. PLi.-^^vlîîFnwrwiHiffêv ; i / ; ^ b
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BA1310
BAI310(
10KHz
19KHz
38KHz
560mV
BA1310
BAI310
560mVrms
3AA1
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DSX151G
Abstract: No abstract text available
Text: CRYSTAL RESONATORS SMD Type H ll£tS !!7K IiJS i!i? DSX151G SERIES □ S X I5 lG iz K IltlS ]T -£ tfK U /c tz ^5 + 4 7 The DSX151G is a compact product featuring high resistance to the environment, out standing stability and high reliability. Xs DV/K-Xu
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DSX151G
DSX151GA
DSX151GS
60Qmax.
200sec
rCl83'
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tfk 914
Abstract: TFK 914 D transistor 81 120 w 63 cmi Transistor Mt 100
Text: A tfK Q M m an A M P com pany Radar Pulsed Power Transistor, 30W, 1.0ms Pulse, 10% Duty 1.2-1.4 GHz PH1214-30EL V2.00 820 Features • • • • • • • • C20B3 NPN Silicon M icrow ave P ow er T ran sisto r C o m m o n Base C o n fig u ratio n B ro a d b an d Class C O p e ra tio n
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PH1214-30EL
C20B3)
PH1214-30EL
tfk 914
TFK 914 D
transistor 81 120 w 63
cmi Transistor Mt 100
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Untitled
Abstract: No abstract text available
Text: Toggle sw itch e s TL FE A T U R E S G v tfK c d to m - s - s m • FnvYorm C fitiXoo f sealing • • 1,2, an d 4 p o tc cvcvfty. • Standard ondpvQ to unlock fevers. • 2 an d 3 po sitio n , m atototo* ct an d m o m entary toggle actio n • Temperaturerange: -6 5 "F lo +1&TF
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11GVDC
arr08-l25
Hp-125VAC;
amps-125
amps-120
Hp-125
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TFK U B
Abstract: R75n
Text: Thh dD«urn«n1 re t h i pr«p«rty «f A m pha io l C w p a n rlk n and fs d*nv«r«d an R E V IS IO N S +h« e xp ress c an dR ia n m o i fh ¡e r o + +a be tfk c b s a d , rap ra dM csd o r u s s d . In whale o r In pari, ta r manu Tod urs ar M l« by « ny«i» al hcr m an Am phm nl
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HK2571
5/29/D3
RWC-1600-001
TFK U B
R75n
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diode B14A
Abstract: B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070
Text: TELEFUNKEN ELECTRONIC 17E D • O lSO O ^b P O Q Ib S l S TFK 3070 D TTIUilPiiSMKIIKI electronic Creato*1«chn0t0Q«s Preliminary specifications NPN Silicon Darlington Power Transistor , 7 * * 3 3 - 3 r Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)
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00CHb51
000Rb52
T0126
15A3DIN
diode B14A
B14A diode
TFK 03 Diode
TFK3070D
TFK 001
B14A
23 TFK 001
TFK u 269
TFK 03
TFK3070
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transistor Bc 540
Abstract: tfk 540 TFK 212 TRANSISTOR BC 212 bc 212 BC212 BC 540 TRANSISTOR
Text: SHi2:ium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and driver stages Besondere Merkmale: Features: • • • • Verlustleistung 300 mW • In G ruppen so rtie rt
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TFK 450 B2
Abstract: tfk bcy 59 TFK 79 tfk bcy 58 BCY79 BCY790 75558 BCY78 BCY 59
Text: BCY 78 • BCY 79 'W Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar Transistors Anwendungen: Allgem ein und NF-Verstärker Applications: General and AF am plifiers Besondere Merkmale: Features: • Verlustleistung 1 W • Power dissipation 1 W
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TFK 1n4148
Abstract: TFK BAV20 TFK BAV21 1N53488 bzx850 BZX85g BZV85-C6V8 vishay 1N458A substitution BZXB4-C51 1N4148 tfk
Text: VISHAY ▼ Vishay Telefunken Cross Reference This guide includes a code letter system which designates the compatibility between Vishay Telefunken devices and those of other manufacturers. Although every effort has been made to assure accurate and reliable substitutions, Vishay Telefunken assumes
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1N3600
1N3604
1N4148
1N914
1N4150
1N4151
1N4153
1N4154
TFK 1n4148
TFK BAV20
TFK BAV21
1N53488
bzx850
BZX85g
BZV85-C6V8 vishay
1N458A substitution
BZXB4-C51
1N4148 tfk
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42t sot-23
Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
Text: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen
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BCW61B
BCX716
BCX71J
BCW60
42t sot-23
BCD Schalter
TFK BB
transistor BC 458
BCX 458
TFK AF
tfk s 154 p
am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716
tfk 715
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fr 309
Abstract: BC307 BC177 BC179 BC 179 BC308 BC 307 bc 308 BC309 tfk 731
Text: BC 177 • BC 178 • BC179 BC 307 - BC 308 • BC 309 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and d river stages Besondere Merkmale: Features: • BC 179, BC 309 fü r rauscharm e Vorstufen
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BC179
fr 309
BC307
BC177
BC179
BC 179
BC308
BC 307
bc 308
BC309
tfk 731
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B861
Abstract: TFK S 1 86 P
Text: 3 TM2S DRAKJM3 iS LNPISLJSHED. C0PYR2GHT IS Sf AMP JhCORPCW/MfD. D A AMP J4?J-â ftfV 03WAY94 i_X-JUN-96 15i58r25 oqpZMSJ /fJl^dâpttt23/d^]?23Aj.Æipoi«r/U,i?jfc*-d fiC 1 2 REVISIONS b 86 E R E V IS E D £ REDRAWN PER 0 7 2 0 - 0 8 5 6 - 3 5 17JUNSE QfCS WJV
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15i58r25
pttt23/d^
17JUNSE
07hEftWJS£
-B-S25
B861
TFK S 1 86 P
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TFK um 175
Abstract: tfk 635
Text: Temic S e m i c o n d u c t o r s Tape and Reel Standards T EM IC offers T-l 3 mm and T-I-V4 (5 mm) IR em itters and detectors packaged on tape. The follow ing specifica tion is based on IEC publication 286. taking into account the industrial requirem ents for autom atic insertion.
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BA532
Abstract: IS002 BA521U BA-532 ba521
Text: 1 3 .2 V • BA521U, t -ZV7i. ft - 7 > 7 ” Physical Dimensions) IC'C^o 6W O-y AO-iM v h /\° 7 I fflic ¡ft St L A : • - 5 .8 W BA521 QUALITY RELIABILITY ì f i U G O £ t -, -f=?* y yO *: - * K (!£•(£ : imi) 3.6±C.2 M (Features) 1. ^ m * 5 .8 W (T M D = IO % )x ,V:;ii!i!>(r>5dB)T'«te^„
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BA521U,
J-XBA511A,
BA532.
-68fl
BA532
IS002
BA521U
BA-532
ba521
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e1030
Abstract: No abstract text available
Text: A T 2 3 LO OD fO N 27 .6 O / 7t 7i E T3 o 2mmcoizmX'&']æ t? i > ^ n 3 [^] sr £ f/tS^O vfSSjÆ L “C «fe-â-C* £ i, 'J -t 7' ^ ^ 'V 3> ^ ± ^ ^ h ¿± sy =& 1 7 3 6 3 0 , 7 73637 O »— I cc NOTE ; /J^TO BE M E A S U R E D B E T W E E N P a ^ AND 2 ¿ ^ T O BE M A TE WI TH C A P HSG S M O O T H L V
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070SERIES
e1030
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3 tfk 206
Abstract: SHINDENGEN DIODE
Text: ÿ i ' t - K ï v - i -;u 3 Pha>e Bridge Diode Diode Module mmtt'ikm S15VT o u t l i n e d im e n s io n s S15VTA 800V 15A •S Q IP A '^ -y •  ÎH Œ - B l FSM •y'jy V T A iM : ? ffl i t •I73> im-<yn—? •fa , RATINGS Absolute Maximum Ratings
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S15VT
S15VTA
S15VT60
S15VT80
S15VTA60
S15VTA80
50HziK3Srt,
3 tfk 206
SHINDENGEN DIODE
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ic ta 7699
Abstract: 2SB176 2SB172 2SB177 TC 4863 GE PNP ALLOY JUNCTION
Text: 2 SB17 2 , 2 SB1 76, 2SB177 2SB172, 2SB176, 2SB177 2SB177: PNP ^ /M A IN T E N A N C E PNP Alloy Junction Power Amplifier 4$ ^ /F e a tu r e s • B y^"C 0.4W "fo • 0. 4 W output in class B push-pull amplifier tk'k'M tfk /A b solu te Maximum Ratings (Ta=25°C)
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2SB172,
2SB176,
2SB177
2SBi77:
2SB172
2SB176
2SB172
ic ta 7699
2SB176
2SB177
TC 4863
GE PNP ALLOY JUNCTION
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tfk 731
Abstract: TFK BPW 41 N 74140 CQY 38 CQY 66 Fotodiode TFK 925 diode tfk diode s .* tfk Scans-0010327
Text: CQY 38 H 'W GaUliumarsenid-Lumineszenzdiode GaAs Infrared Emitting Diode Anwendung: Strahlungsquelle im nahen Infrarot-Bereich Application: Radiation source in near infrared range Besondere Merkmale: Features: • Metallsockel mit Kunststofflinse • Metal base with plastic lens
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EF50
Abstract: No abstract text available
Text: PHILIPS EF50 PENTODE for use as wide band and measuring amplifier PENTHODE pour utilisation comme amplificatrice à large bande et de mesure PENTODE zur Verwendung als Breitband- und Messver stärker Heating: indirect by A.C. or D.C.; parallel supply Chauffage: indirect par C.A. ou C.C.;
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transistor BF 257
Abstract: bf414 transistor BF 414 tfk 513 BF 414 transistor BF 258 414 transistor AI-257 db258 Kleine
Text: Silizium-PNP-Epitaxial-Planar-HF-Transistor Silicon PNP Epitaxial Planar RF Transistor Anwendungen: VHF-Eingangsstufen in Basisschaltung Applications: VHF input stages in com m on base configuration Besondere Merkmale: Features: • Kleine R ückwirkungskapazität
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