TGA1319A
Abstract: TGA4506
Text: Not Recommended for New Designs Product Data Sheet August 5, 2008 TriQuint Recommends the TGA4506 be used for New Designs Ka Band Low Noise Amplifier TGA1319A Key Features and Performance • • • • • • Chip Dimensions 1.984 mm x .923 mm 0.15um pHEMT Technology
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Abstract: No abstract text available
Text: Advance Product Information February 19, 2003 K Band Low Noise Amplifier TGA4506-EPU Key Features • • • • • • • Typical Frequency Range: 20 - 27 GHz 21 dB Nominal Gain 2.2 dB Nominal Noise Figure 12 dBm Nominal P1dB Bias 3.5 V, 60 mA 0.15 um 3MI pHEMT Technology
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Text: TGA4506-SM K Band Packaged Low Noise Amplifier Key Features • • • • • • 21-27 GHz Bandwidth 21 dB Nominal Gain 2.5 dB Nominal Noise Figure 10 dBm Nominal P1dB Bias: 3.5 V, 60 mA Package Dimensions: 4.0 x 4.0 x 1.1 mm 0.157 x 0.157 x 0.043 in
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tga 4506
Abstract: TGA4506 RO4003 TGA4506-SM
Text: Advance Product Information November 14, 2005 K Band Packaged Low Noise Amplifier TGA4506-SM Key Features • • • • • • 21-27 GHz Bandwidth 21 dB Nominal Gain 2.5 dB Nominal Noise Figure 10 dBm Nominal P1dB Bias: 3.5 V, 60 mA Package Dimensions:
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TGA4506
Abstract: Q102 TGA4506-EPU
Text: Advance Product Information December 20, 2001 21-27 GHz Low Noise Amplifier TGA4506-EPU Key Features • • • • • • 0.15 um pHEMT Technology 10 dBm Nominal Pout @ 24 GHz 20 dB Nominal Gain @ 22 GHz <2.0 dB Noise Figure @ 24 GHz 3.5V, 55 mA with -0.5V < Vg < +0.5V
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TGA1319B
Abstract: TGA4506
Text: Not Recommended for New Designs Product Data Sheet August 5, 2008 TriQuint Recommends the TGA4506 be used for New Designs Ka Band Low Noise Amplifier TGA1319B Key Features and Performance • • • • • • 0.15um pHEMT Technology 21-27 GHz Frequency Range
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TGA4506
Abstract: No abstract text available
Text: Advance Product Information July 19, 2005 K Band Low Noise Amplifier TGA4506 Key Features • • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 3.5 V, Id = 60 mA Gain & Return Loss dB 30 Gain 20 Typical Frequency Range: 20 - 27 GHz
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Text: Advance Product Information March 28, 2005 K Band Packaged Low Noise Amplifier TGA4506-SM Key Features • • • • • • 21-27 GHz Bandwidth 21 dB Nominal Gain 2.5 dB Nominal Noise Figure 10 dBm Nominal P1dB Bias: 3.5 V, 60 mA Package Dimensions: 4.0 x 4.0 x 1.1 mm
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Text: Advance Product Information November 20, 2003 K Band Low Noise Amplifier TGA4506-EPU Key Features • • • • • • • Typical Frequency Range: 20 - 27 GHz 21 dB Nominal Gain 2.2 dB Nominal Noise Figure 12 dBm Nominal P1dB Bias 3.5 V, 60 mA 0.15 um 3MI pHEMT Technology
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TGA4506-EPU
Abstract: No abstract text available
Text: Advance Product Information January 7, 2004 K Band Low Noise Amplifier TGA4506-EPU Key Features • • • • • • • Typical Frequency Range: 20 - 27 GHz 21 dB Nominal Gain 2.2 dB Nominal Noise Figure 12 dBm Nominal P1dB Bias 3.5 V, 60 mA 0.15 um 3MI pHEMT Technology
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TGA4506
Abstract: 0031X
Text: TGA4506 K Band Low Noise Amplifier Key Features • • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 3.5 V, Id = 60 mA Gain & Return Loss dB 30 Gain 20 Typical Frequency Range: 20 - 27 GHz 21 dB Nominal Gain 2.2 dB Nominal Noise Figure
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Text: TGA4506-SM K Band Packaged Low Noise Amplifier Key Features • • • • • • 21-27 GHz Bandwidth 21 dB Nominal Gain 2.5 dB Nominal Noise Figure 10 dBm Nominal P1dB Bias: 3.5 V, 60 mA Package Dimensions: 4.0 x 4.0 x 1.1 mm 0.157 x 0.157 x 0.043 in
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Text: Advance Product Information K Band Packaged Low Noise Amplifier TGA4506-SM Key Features • • • • • • 21-27 GHz Bandwidth 21 dB Nominal Gain 2.5 dB Nominal Noise Figure 10 dBm Nominal P1dB Bias: 3.5 V, 60 mA Package Dimensions: 4.0 x 4.0 x 1.1 mm
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Text: Advance Product Information March 8, 2002 21-27 GHz Low Noise Amplifier TGA4506-EPU Key Features • • • • • • Primary Applications Gain dB Measured Fixtured Data 24 22 20 18 16 14 12 10 8 6 4 2 20 21 22 23 24 25 26 27 28 0.15 um pHEMT Technology
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Abstract: No abstract text available
Text: TGA4506 K Band Low Noise Amplifier Key Features • • • • • • • Preliminary Measured Data Typical Frequency Range: 20 - 27 GHz 21 dB Nominal Gain 2.2 dB Nominal Noise Figure 12 dBm Nominal P1dB Bias 3.5 V, 60 mA 0.15 um 3MI pHEMT Technology Chip Dimensions 1.2 x 0.8 x 0.1 mm
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TGA4506
Abstract: RO4003 TGA4506-SM
Text: TGA4506-SM K Band Packaged Low Noise Amplifier Key Features • • • • • • 21-27 GHz Bandwidth 21 dB Nominal Gain 2.5 dB Nominal Noise Figure 10 dBm Nominal P1dB Bias: 3.5 V, 60 mA Package Dimensions: 4.0 x 4.0 x 1.1 mm 0.157 x 0.157 x 0.043 in
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TGA2517
Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
Text: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint
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cus937
TGA2517
TQP6M9002
TQM653029
TGS4304
SG-O1-16
TGA2503
TAT7469
TGA9092-SCC
854651
AH125
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TGA2519-SG
Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
Text: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m
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AsareavailableforkeybandsacrossDCto100GHz
Alldevicesare100%
11GHzCut-OffFreq
TGC1430F-EPU
TGC1430G-EPU
TGC4401-EPU
TriQuintSemiconductor5/06
S11/S22
DC-20
DC-18
TGA2519-SG
HPA Ku
TGF4350-EPU
HPA41
ic 7435
TGC4401-EPU
ku vsat amplifier
TGA2512 price
tga8658
TGA2519
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TGA2517
Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
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TG2H214220-FL
Abstract: TGA2572 TGA2573 lte transceiver TGA2540-FL TQM963014 TGA2517 TQM6M9069 TQP6M9002 TQM7M5013
Text: Product Selection Guide Choose TriQuint’s Innovative RF Solutions Connecting the Digital World to the Global Network Welcome to Our Product Selection Guide Table of Contents About TriQuint Semiconductor.3 Guide by Market Automotive. 4
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ka band lna
Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
Text: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: [email protected] Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for
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TGA2517
Abstract: TGA2540-FL TGA2573 TQM7M5013 TQP6M9002 tga2540 tqp340003 TQM726018 QFN28 6x6 TQM679002A
Text: May 2010 Product Selection Guide Amplifiers Control Products Filters Integrated Products Optical Components Connecting the Digital World to the Global Network Table of Contents ABOUT TRIQUINT SEMICONDUCTOR .2 GUIDE BY MARKET Automotive . 4
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Mil-Std-883 Wire Bond Pull Method 2011
Abstract: MIL-STD-883 Method 2010 pHEMT transistor RF MESFET S parameters MESFET 0.15 phemt p-hemt TGA8310 MIL-STD-883 method 2011 GaAs 0.15 pHEMT
Text: GaAs MMIC Space Qualification GaAs MMIC Testing TriQuint Semiconductor has advanced Lot Acceptance Testing LAT for High Reliability Applications of GaAs MMICs. A flowchart depicting the entire MMIC processing flow, including the Quality Conformance Inspection
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