TGI8596 Search Results

TGI8596 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TGI8596-50		Toshiba	TGI8596 - TRANSISTOR X BAND, Si, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 7-AA04A, 2 PIN, FET RF Power		Original	PDF

TGI8596 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TGI8596-50 Abstract: TGI8596 Text: MICROWAVE POWER GaN HEMT TGI8596-50 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER Pout=47.0dBm at Pin=41.0dBm HIGH GAIN GL=9.0dB at 8.5GHz to 9.6GHz BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C	Original	TGI8596-50 41dBm 20dBm AA04A TGI8596-50 TGI8596	PDF
tgi8596-50 Abstract: TGI8596 Text: MICROWAVE POWER GaN HEMT TGI8596-50 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER Pout=47.0dBm at Pin=41.0dBm HIGH GAIN GL=9.0dB at 8.5GHz to 9.6GHz BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C	Original	TGI8596-50 41dBm 20dBm AA04A tgi8596-50 TGI8596	PDF
TGI8596-50 Abstract: TOSHIBA HEMT 41dBm Text: MICROWAVE POWER GaN HEMT TGI8596-50 MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES HIGH POWER Pout=47.0dBm at Pin=41.0dBm HIGH GAIN GL=9.0dB at 8.5GHz to 9.6GHz BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C	Original	TGI8596-50 41dBm AA04A TGI8596-50 TOSHIBA HEMT 41dBm	PDF
TGI8596-50 Abstract: No abstract text available Text: MICROWAVE POWER GaN HEMT TGI8596-50 FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 41.0dBm ･HIGH GAIN GL= 9.0dB at 8.5GHz to 9.6GHz ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Ta= 25C	Original	TGI8596-50 20dBm 7-AA04A) No1216 TGI8596-50	PDF
RFM70U12D Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919 Text: 東芝半導体製品総覧表 2009 年 7 月版高周波デバイス高周波バイポーラ小信号トランジスタ高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ高周波ダイオード小信号 MMIC 高周波セルパック	Original	SCJ0004N 2SC2714 2SC2715 2SC2716 2SC3123 2SC5064 2SC5084 2SC5089 2SC5094 2SC5106 RFM70U12D 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919	PDF
MT4S300T Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors	Original	2010/9SCE0004K 2SC1923 MT4S300T TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T	PDF
MT3S111P Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293 Text: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287	Original	2SC941TM 2SC3136 TIM7179-45SL TIM7179-60SL TIM7785-4SL TIM7785-4UL TIM7785-6UL TIM7785-8SL TIM7785-8UL TIM7785-12UL MT3S111P 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293	PDF
TGI8596-50 Abstract: TMD7185-2 TIM5359-60SL TIM8996-30 X-band Gan Hemt TGI1414-50L TMD0305-2 tim5964-60sl TIM5964-6UL TIM5359-4UL Text: ▼ Microwave Semiconductors Product Guide 2009 Power GaAs FETs and GaAs MMICs Pout vs. Frequency Map .3 C-band Internally Matched Power GaAs FETs Pout vs. Frequency Map .4	Original	MSE-2008 MSE-2009 TGI8596-50 TMD7185-2 TIM5359-60SL TIM8996-30 X-band Gan Hemt TGI1414-50L TMD0305-2 tim5964-60sl TIM5964-6UL TIM5359-4UL	PDF
2sc5066 Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136 Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs	Original	SCE0004I 2SC380TM 2sc5066 MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136	PDF
TMD1414-2 Abstract: TGM9398-25 8596-50 Text: Product Guide 2014 Microwave Semiconductors GaAs MMICs L and S-band Partially Matched Power GaAs FETs Pout vs. Frequency Map 80 49 48 60 TPM2828-60❋ TPM1919-60 40 46 44 ● Output Power vs. Frequency Map GaAs MMICs L and S-band Partially Matched Power GaAs FETs . 3	Original	TPM2828-60â TPM1919-60 TPM2828-9â TMD0708-2 TMD0608-4 TMD7185-2 TMD5872-2 TMD1925-3 TMD1013-1-431 TMD0507-2A TMD1414-2 TGM9398-25 8596-50	PDF
RFM70U12D Abstract: 2SC3136 RFM70 TGI8596-50 MT4S300T TA4029 TA4032FT TA4029TU TA4029CTC 2SK403 Text: 東芝半導体製品総覧表 2010 年 1 月版高周波デバイス高周波バイポーラ小信号トランジスタ高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ高周波ダイオード小信号 MMIC 高周波セルパック	Original	SCJ0004O 2SC2714 2SC2715 2SC2716 2SC3123 2SC5064 2SC5084 2SC5089 2SC5106 2SC5109 RFM70U12D 2SC3136 RFM70 TGI8596-50 MT4S300T TA4029 TA4032FT TA4029TU TA4029CTC 2SK403	PDF
TGI7785-120L Abstract: TA4029TU MT3S11CT TA4029CTC MT4S300T MT4S300U TA4032FT TGI8596-50 TMD7185-2 TGI0910-50 Text: 東芝半導体製品総覧表 2011 年 1 月版高周波デバイス高周波バイポーラ小信号トランジスタ高周波小信号 FET 高周波パワーMOSFET 高周波ダイオード小信号 MMIC 高周波セルパックマイクロ波半導体	Original	SCJ0004R 2SC2714 2SC5064 2SC5084 2SC5089 2SC5106 2SC5109 MT3S03A MT3S04A MT3S106 TGI7785-120L TA4029TU MT3S11CT TA4029CTC MT4S300T MT4S300U TA4032FT TGI8596-50 TMD7185-2 TGI0910-50	PDF