IRGC20B60KB
Abstract: No abstract text available
Text: PD - 94375 IRGC20B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom = 20A VCE(on) typ.=1.82V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on)
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IRGC20B60KB
150mm
IRGC20B60KB
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1kA IGBT
Abstract: IRGC30B60KB
Text: PD - 94376 IRGC30B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom = 30A VCE(on) typ.=1.95V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on)
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IRGC30B60KB
150mm
1kA IGBT
IRGC30B60KB
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IRGC50B60KB
Abstract: 4kA IGBT
Text: PD - 94377 IRGC50B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom =50A VCE(on) typ.=2.0V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability
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IRGC50B60KB
150mm
IRGC50B60KB
4kA IGBT
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Stanson Technology
Abstract: TH 9437 P channel MOSFET 1A MOSFET 30v sop-8
Text: P943 7 ST STP 9437 P Channel Enhancement Mode MOSFET - 5.7A DESCRIPTION STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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STP9437
STP9437
-30V/-5
-30V/-4
Stanson Technology
TH 9437
P channel MOSFET 1A
MOSFET 30v sop-8
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IRFU3412
Abstract: AN-994 IRFR120 IRFR3412 U120 irf 064 power MOSFET IRF data
Text: PD - 94373 IRFR3412 IRFU3412 SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic
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IRFR3412
IRFU3412
EIA-481
EIA-541.
EIA-481.
IRFU3412
AN-994
IRFR120
IRFR3412
U120
irf 064
power MOSFET IRF data
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AN-994
Abstract: IRFR120 IRFR3412 IRFU3412 U120 power MOSFET IRF data
Text: PD - 94373 IRFR3412 IRFU3412 SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic
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IRFR3412
IRFU3412
Po318
EIA-481
EIA-541.
EIA-481.
AN-994
IRFR120
IRFR3412
IRFU3412
U120
power MOSFET IRF data
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F7101
Abstract: IRF7101 IRF7338
Text: PD - 94372C IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω P-CHANNEL MOSFET
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94372C
IRF7338
EIA-481
EIA-541.
F7101
IRF7101
IRF7338
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IRF7338
Abstract: MOSFET N-CHANNEL 60v 60A
Text: PD - 94372B IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω P-CHANNEL MOSFET
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94372B
IRF7338
EIA-481
EIA-541.
IRF7338
MOSFET N-CHANNEL 60v 60A
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F7101
Abstract: IRF7101 IRF7338
Text: PD - 94372A IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 P-CHANNEL MOSFET VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω
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4372A
IRF7338
EIA-481
EIA-541.
F7101
IRF7101
IRF7338
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Untitled
Abstract: No abstract text available
Text: 10 3.0- — í \ /h — - m jJ u i| vt Ò LTÌ F ON u — - jJ u Ni - jj u 1 F T| 194371B !j| - J — - ii U 11 i S| u i-n Li 3 r 0.5 to h e lp th e fe e d in g o f th e p a r t in th e a s s e m b ly m a c h in e [f\ = 3 - R E F E R E N C E DIMENSIONS:
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94371B
SD-94371-001
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gi 9436 diode
Abstract: Thyratron dc to ac inverter gi 9436 gi 9438 diode Thyratron x-ray tube operation CHOKE COMMON rca company RECTIFIER GI DC to AC 3 phase Inverter Circuits
Text: 7086 XENON THYRATRON F o r c e d - A i r Co oled Hi gh Peak Cu rrent RCA-7086 cooled is TENTATI VE DATA Design a th re e - e Ie ctro d e r fo rced -air xenon t h y r a t r o n ch ara cte ristic, 11-3/4" Overall Length 4-1/2" Diameter Bulb Ne gative-Control Tr io de Type
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RCA-7086
gi 9436 diode
Thyratron dc to ac inverter
gi 9436
gi 9438 diode
Thyratron
x-ray tube operation
CHOKE COMMON
rca company
RECTIFIER GI
DC to AC 3 phase Inverter Circuits
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH26636BJ-7, -8, -10 9437184-BIT 262144-WORD BY 36-BIT DYNAMIC RAM DESCRIPTION The M H 2 6 6 3 6 B J is a 2 6 2 1 4 4 -w o rd x 36 b it d y n a m ic R A M . T his is consists o f nine in d u s try standard 2 5 6 K x 4 b it d y n a m ic R A M s in SOJ and one d riv e r in SOP.
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MH26636BJ-7,
9437184-BIT
262144-WORD
36-BIT)
26636BJ-
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Untitled
Abstract: No abstract text available
Text: M ITSUBISHI LSIs MH1 M09B0AJ-7,-8/ MH1 M09B0AJA-7,-8 FAST PAGE MODE 9437184-BIT 1048576-WORD BY 9-BIT DYNAMIC RAM DESCRIPTION The MH1 M 0 9 B 0 A J /J A is 1 0 4 8 5 7 6 -w ord x 9 - bit dynamic PIN CONFIGURATION (TOP VIEW) (Single side] RAM. This consists o f tw o industry standard 1M x 4 dynamic
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M09B0AJ-7
M09B0AJA-7
9437184-BIT
1048576-WORD
MH1M09B0AJ/JA-7
MH1M09B0AJ/JA-8
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m5m51008afp
Abstract: No abstract text available
Text: M H1M09AN-85L,-10L,-12L,-15L,-85H,-10H,-12H,-15H / MH1 M09ANZ-85L.-10L,-12L,-15L,-85H,-10H,-12H,-15H 9437184-BIT 1Q48576-WORD BY 9-BIT CMOS STATIC RAM DESCRIPTION The M H1M 09AN/ANZ is 9437184-bit CMOS static • Single 5V power supply RAM organized as 1048576-word by 9-bit. It consists of eight
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H1M09AN-85L
M09ANZ-85L
9437184-BIT
1Q48576-WORD
09AN/ANZ
9437184-bit
1048576-word
128Kx8
72pin
70-pin
m5m51008afp
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Untitled
Abstract: No abstract text available
Text: * ^ - : >o " .o MH25636XJ-8/ MH25636SXJ-8 FAST PAGE MODE 9437184-BIT 262144-WORD BY 36-BIT DYNAMIC RAM DESCRIPTION M H 2 5 6 3 6 X J /S X J is 26 2 1 4 4 -w o rd by 3 6 -b it dynamic RAM PIN CONFIGURATION (TOP VIEW ) [Single side] o module. This consists of two industry standard 256K x 18bit
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MH25636XJ-8/
MH25636SXJ-8
9437184-BIT
262144-WORD
36-BIT
18bit
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Untitled
Abstract: No abstract text available
Text: blE » I MITSUBISHI MITSUBISHI LSIs b24TflE5 G D 2 0 3 b 3 S7Ô • M I T I H E H O R Y / A S I C MH25636X J,SX J-8,-10 FAST PAGE MODE 9437184-BIT(262144-WORD BY 36-BIT)DYNAMIC RAM DESCRIPTION MH25636XJ, SXJ is 262144-w ord by 3 6 -b it dynamic RAM module. This consists of tw o industry standard 256K x 18bit
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b24TflE5
MH25636X
9437184-BIT
262144-WORD
36-BIT
MH25636XJ,
262144-w
18bit
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH25636XJ,SXJ-8,-10 FAST PAGE MODE 9437184-BIT 262144-WORD BY 36-BIT DYNAMIC RAM DESCRIPTION MH25636XJ, SXJ is 2 6 2 1 4 4 -word by 3 6 - bit dynamic RAM module. This consists of two industry standard 256K x 18bit dynamic RAMs in SOJ. The mounting of SOJ on a single in-line package. This
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MH25636XJ
9437184-BIT
262144-WORD
36-BIT
MH25636XJ,
18bit
SXJ-10
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is SRAM MODULE MH1 M09SSP-25,-35,-45 -ÍW S«", a 9437184-BIT (1048576-WORD BY 9-BIT) CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) [Single side] This is consists nine industry 1M x 1bit static RAMs in TSOP. A6 1 2 3 4 A7 5 A8 6
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M09SSP-25
9437184-BIT
1048576-WORD
MH1M09SSP-25
MH1M09SSP-35.
MH1M09SSP
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is SRAM MODULE M H 1 M 0 9 A N - 8 5 L ,- 1 0 L ,- 1 2 L ,- 1 5 L ,- 8 5 H ,- 1 0 H ,- 1 2 H ,- 1 5 H M H 1 M 0 9 A N Z - 8 5 L ,- 1 0 L r / 1 2 L ,- 1 5 L ,- 8 5 H ,- 1 0 H ,- 1 2 H ,- 1 5 H 9437184-BIT (1048576-WORD BY 9-BIT) CMOS STATIC RAM
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9437184-BIT
1048576-WORD
09AN/ANZ
9437184-bit
72pin
70-pin
MH1M09AN-85L
MH1M09ANZ-85L
100ns
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9437 transistor
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner's Data Sheet MMSF4P01 HD Medium Power Surface Mount Products M otorola Preferred Device TMOS P-Channel Field Effect Transistors S IN G L E T M O S P O W E R FE T M in iM O S ’M d e vice s are an a dva n ce d se rie s o f p o w e r M O S F E Ts
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MMSF4P01
SF4P01HD
0E-04
0E-03
9437 transistor
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is DRAM MODULE: FAST PAGE MODE DYNAMIC RAM 256K X 36 9 i BIT Max. Type name Access Load memory time Outward dimensions Data sheet W X H X D (mm) page (ns) MH25636XJ-8 M5M44280AJ x 2 80 107.95 X 17.5 X 5 3/14 MH25636SXJ-8 COMMON DATA 4/14 -
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MH25636XJ-8
M5M44280AJ
MH25636SXJ-8
MH25636XJ-8/
H25636SXJ-8
9437184-BIT
262144-WORD
36-BIT
18bit
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Untitled
Abstract: No abstract text available
Text: LMH6642EP,LMH6643EP,LMH6644EP LMH6642EP/LMH6643EP/LMH6644EP Enhanced Plastic Low Power, 130MHz, 75mA Rail-to-Rail Output Amplifiers T ex a s In s t r u m e n t s Literature Number: SNOSAA7B t t i o n OBSOLETE LMH6642EP/LMH6643EP/ LMH6644EP a l Sem iconductor
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LMH6642EP
LMH6643EP
LMH6644EP
LMH6642EP/LMH6643EP/LMH6644EP
130MHz,
LMH6642EP/LMH6643EP/
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs {DRAM MODULE MH25636XJ-8/ MH25636SXJ-8 FAST PAGE MODE 9437184-BIT 262144-WORD BY 36-BIT)DYNAMIC RAM DESCRIPTION M H 2 5 6 3 6 X J /S X J is 2 6 2 1 4 4 -w o rd by 3 6 -b it dynamic RAM PIN CONFIGURATION (TOP VIEW) [Single side] o module. This consists o f tw o industry standard 256K x 18b it
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MH25636XJ-8/
MH25636SXJ-8
9437184-BIT
262144-WORD
36-BIT
0D2h227
MH25636XJ
MH25636SXJ
9437184-BIT
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EZ 0710
Abstract: 4lu4e 234T0 J137 L437 lcd Inverter Delta 13 pin 20PM sharp lcd tv ics sharp lcd panel 20 pin
Text: 00/06/90 ie:2&;24 SHABP FastFax-> S H A R P 9493612121 1-000-033-9437 C O R P O R A T I O N O S A K A , SPECIFICATION M O D E L NO. : B R A N D N A M E : J A P A N FOR LCD D I S P L A Y 4 L-U 4 E S HARP C U S T O M E R : S. S. C C O U N T R Y ; J. S. A m . , 20,1994
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949361Z121
EZ 0710
4lu4e
234T0
J137
L437
lcd Inverter Delta 13 pin
20PM
sharp lcd tv ics
sharp lcd panel 20 pin
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